ISO 11452-3:2016
(Main)Road vehicles — Component test methods for electrical disturbances from narrowband radiated electromagnetic energy — Part 3: Transverse electromagnetic (TEM) cell
Road vehicles — Component test methods for electrical disturbances from narrowband radiated electromagnetic energy — Part 3: Transverse electromagnetic (TEM) cell
ISO 11452-3:2016 specifies transverse electromagnetic (TEM) cell tests for determining the immunity of electronic components of passenger cars and commercial vehicles to electrical disturbances from narrowband radiated electromagnetic energy, regardless of the vehicle propulsion system (e.g. spark-ignition engine, diesel engine, electric motor). The electromagnetic disturbances considered are limited to continuous narrowband electromagnetic fields.
Véhicules routiers — Méthodes d'essai d'un équipement soumis à des perturbations électriques par rayonnement d'énergie électromagnétique en bande étroite — Partie 3: Cellule électromagnétique transverse (TEM)
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Standards Content (Sample)
INTERNATIONAL ISO
STANDARD 11452-3
Third edition
2016-09-01
Road vehicles — Component test
methods for electrical disturbances
from narrowband radiated
electromagnetic energy —
Part 3:
Transverse electromagnetic (TEM) cell
Véhicules routiers — Méthodes d’essai d’un équipement soumis
à des perturbations électriques par rayonnement d’énergie
électromagnétique en bande étroite —
Partie 3: Cellule électromagnétique transverse (TEM)
Reference number
ISO 11452-3:2016(E)
©
ISO 2016
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ISO 11452-3:2016(E)
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ISO 11452-3:2016(E)
Contents Page
Foreword .iv
Introduction .v
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Test conditions . 1
5 Test apparatus . 2
5.1 TEM cell . 2
5.2 Instrumentation . 3
5.3 Test set-up . 3
5.3.1 General. 3
5.3.2 Exposure of device under test and wiring harness (for major field
coupling to the harness) . 4
5.3.3 Exposure of device under test alone (for major field coupling to that device) . 6
6 Test procedure . 7
6.1 Test plan . 7
6.2 Test method . 7
6.2.1 General. 7
6.2.2 Test level setting . 7
6.2.3 DUT test . 8
6.3 Test report . 8
Annex A (informative) TEM cell dimensions .10
Annex B (informative) Calculations and measurements of TEM-cell frequency range .12
Annex C (informative) Installation of external components and low pass filter design .14
Annex D (informative) Test setup without low pass filters .17
Annex E (informative) Function performance status classification (FPSC) and test
severity levels .20
Bibliography .21
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ISO 11452-3:2016(E)
Foreword
ISO (the International Organization for Standardization) is a worldwide federation of national standards
bodies (ISO member bodies). The work of preparing International Standards is normally carried out
through ISO technical committees. Each member body interested in a subject for which a technical
committee has been established has the right to be represented on that committee. International
organizations, governmental and non-governmental, in liaison with ISO, also take part in the work.
ISO collaborates closely with the International Electrotechnical Commission (IEC) on all matters of
electrotechnical standardization.
The procedures used to develop this document and those intended for its further maintenance are
described in the ISO/IEC Directives, Part 1. In particular the different approval criteria needed for the
different types of ISO documents should be noted. This document was drafted in accordance with the
editorial rules of the ISO/IEC Directives, Part 2 (see www.iso.org/directives).
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. ISO shall not be held responsible for identifying any or all such patent rights. Details of
any patent rights identified during the development of the document will be in the Introduction and/or
on the ISO list of patent declarations received (see www.iso.org/patents).
Any trade name used in this document is information given for the convenience of users and does not
constitute an endorsement.
For an explanation on the meaning of ISO specific terms and expressions related to conformity assessment,
as well as information about ISO’s adherence to the World Trade Organization (WTO) principles in the
Technical Barriers to Trade (TBT) see the following URL: www.iso.org/iso/foreword.html.
The committee responsible for this document is ISO/TC 22, Road vehicles, Subcommittee SC 32, Electrical
and electronic components and general system aspects.
This third edition cancels and replaces the second edition (ISO 11452-3:2001), which has been
technically revised with the following changes:
— the use of forward power as the levelling parameter to make it consistent with the other ISO 11452
standards has been implemented;
— Annex D for testing of devices without using low pass filters has been included.
A list of all parts in the ISO 11452 series can be found on the ISO website.
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ISO 11452-3:2016(E)
Introduction
Immunity measurements of complete road vehicles are generally able to be carried out only by the
vehicle manufacturer, owing to, for example, high costs of absorber-lined shielded enclosures, the desire
to preserve the secrecy of prototypes or a large number of different vehicle models.
For research, development and quality control, a laboratory measuring method can be used by both
vehicle manufacturers and equipment suppliers to test electronic components.
The TEM cell method has the major advantage of not radiating energy into the surrounding environment.
The method can be used for testing either the immunity of a component with the field coupling to the
wiring harness or the immunity of the component alone with minimum exposure to the wiring harness.
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INTERNATIONAL STANDARD ISO 11452-3:2016(E)
Road vehicles — Component test methods for electrical
disturbances from narrowband radiated electromagnetic
energy —
Part 3:
Transverse electromagnetic (TEM) cell
1 Scope
This document specifies transverse electromagnetic (TEM) cell tests for determining the immunity
of electronic components of passenger cars and commercial vehicles to electrical disturbances from
narrowband radiated electromagnetic energy, regardless of the vehicle propulsion system (e.g. spark-
ignition engine, diesel engine, electric motor).
The electromagnetic disturbances considered are limited to continuous narrowband
electromagnetic fields.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any amendments) applies.
ISO 11452-1, Road vehicles — Component test methods for electrical disturbances from narrowband
radiated electromagnetic energy — Part 1: General principles and terminology
3 Terms and definitions
For the purposes of this document, the terms and definitions given in ISO 11452-1 apply.
ISO and IEC maintain terminological databases for use in standardization at the following addresses:
— IEC Electropedia: available at http://www.electropedia.org/
— ISO Online browsing platform: available at http://www.iso.org/obp
4 Test conditions
The upper frequency range limit of the TEM cell is a direct function of the TEM cell dimensions.
For testing automotive electronic systems, a 0,01 MHz to 200 MHz TEM cell should be used. See Annex A
for suggested cell dimensions.
The user shall specify the test severity level or levels over the frequency range. See Annex E for
suggested test severity levels.
Standard test conditions shall be those given in ISO 11452-1 for the following:
— test temperature;
— supply voltage;
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ISO 11452-3:2016(E)
— modulation;
— dwell time;
— frequency step sizes;
— definition of test severity levels;
— test-signal quality.
5 Test apparatus
5.1 TEM cell
The TEM cell used for this test is a rectangular coaxial line with a 50 Ω characteristic impedance (see
Figure 1). The device under test is exposed to a uniform TEM field.
The TEM cell is a laboratory measurement system which can be used to generate test fields within 2 dB
of the theoretical value if the device under test does not occupy an excessive portion of the test volume
(see 5.3).
Key
1 outer conductor (shield)
2 septum (inner conductor)
3 access door
4 connector panel (optional)
5 coaxial connectors
6 dielectric support (relative permittivity ε ≤ 1,4)
r
7 device under test
8 input/output leads
Figure 1 — TEM cell
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ISO 11452-3:2016(E)
5.2 Instrumentation
Figure 2 shows an example of a TEM cell test set-up. The TEM cell has high resonances in the region
greater than the recommended upper frequency limit.
A low pass filter with an attenuation of at least 60 dB at frequencies above 1,5 times the cut-off frequency
of the TEM cell may be installed (e.g. 200 MHz TEM cell: 60 dB for frequencies above 300 MHz) to avoid
resonances.
Key
1 signal generator 9 low pass filters/connector panel
2 broadband amplifier 10 coupler
3 low pass filter (optional) 11 high power load (50 Ω)
4 dual-directional coupler (30 dB decoupling ratio 12 controller
minimum) 13 TEM cell
a
5 RF-power meter P (forward power)
forward
b
6 peripheral P (reflected power)
reflected
c
7 device under test P (output power)
output
8 dielectric support
Figure 2 — Example TEM cell configuration
5.3 Test set-up
5.3.1 General
In order to maintain the homogeneous field in the TEM cell and obtain reproducible measurement
results, the device under test shall be no larger than one-sixth of the cell (inside) height, b (see Figure 3
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ISO 11452-3:2016(E)
and Figure A.1). The device under test should be placed in the centre of the cell on a dielectric equipment
support.
The device under test and the wiring harness may be positioned in either of two arrangements,
depending on whether the exposure of the device under test and the wiring harness (see 5.3.2) or that
of the device alone (see 5.3.3) is being tested.
An alternative test set-up without low pass filter is presented in Annex D.
5.3.2 Exposure of device under test and wiring harness (for major field coupling to the
harness)
The height of the dielectric support is one-sixth of cell height b (see Figure 3). In order to obtain
reproducible measurement results, the device under test, together with its wiring harness or printed
circuit board, shall be placed in the same position in the TEM cell for each measurement. In addition to
the direct RF-field coupling to the device under test, the use of an unshielded harness or printed circuit
board will result in a common mode electrical field coupling and a differential mode magnetic field
coupling, depending on the inclination and the width of the harness or circuit board.
Key
1 device under test
2 dielectric support (relative permittivity ε ≤ 1,4)
r
3 printed circuit board (no ground plane) or wiring harness, unshielded
4 connector
5 coaxial connectors
6 connector panel
7 TEM cell wall
8 cables
9 septum
b TEM cell height (see Annex A)
Figure 3 — Example test set-up — Major field coupling to wiring harness (side view)
The connector panel should be attached to the TEM cell as close as possible to the printed lead system.
The supply and signal leads from the connector in the cell wall are directly connected to the device
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ISO 11452-3:2016(E)
under test, using either a printed circuit board of length suitable for positioning the device under test in
the allowed working region of the TEM cell, or a set of leads secured to a rigid support (see Figure 3 and
Figure 4). The printed circuit board or supported wiring harness between the connector and the device
under test will yield reproducible measurement results if the position of the leads and the device under
test in the TEM cell are fixed.
Key
1 device under test
2 dielectric support (relative permittivity ε ≤ 1,4)
r
3 printed circuit board or wiring harness
4 connector
5 coaxial connectors
6 connector panel
7 TEM cell wall
8 cables
NOTE RF filters can be connected to the coaxial connectors in the connector panel or directly to the
connector in the TEM cell wall.
Figure 4 — Example test set-up — Major field coupling to wiring harness (top view)
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ISO 11452-3:2016(E)
5.3.3 Exposure of device under test alone (for major field coupling to that device)
The height of the dielectric support is b/6 mm (see Figure 5). In order to obtain reproducible
measurement results, the device under test shall be placed in the same position in the TEM cell for each
measurement.
Dimensions in millimetres
Key
1 device under test
2 dielectric support (relative permittivity ε ≤ 1,4)
r
3 shielded wiring harness
4 connector
5 coaxial connectors
6 connector panel
7 TEM cell wall
8 cables
9 septum
b TEM cell height (see Annex A)
Figure 5 — Example test set-up — Major field coupling to device under test (side view)
The connector panel should be attached to the TEM cell. The arrangement and nature of supply and
signal leads shall be chosen in order to minimize the coupling on these leads, which shall be secured on
the floor of the TEM cell and shielded between the connector in the cell wall and the device under test.
This can be
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