ISO 17915:2018

Optics and photonics — Measurement method of semiconductor lasers for sensing

This document describes methods of measuring temperature and injected current dependence of lasing wavelengths, and lasing spectral line width in relation to semiconductor lasers for sensing applications. This document is applicable to all kinds of semiconductor lasers, such as edge-emitting type and vertical cavity surface emitting type lasers, bulk-type and (strained) quantum well lasers, and quantum cascade lasers, used for optical sensing in e.g. industrial, medical and agricultural fields.

Optique et photonique — Méthode de mesure des lasers semi-conducteurs pour la sensibilité

General Information

• Status: Published
• Publication Date: 24-May-2018
• ICS: 31.260 - Optoelectronics. Laser equipment
• Technical Committee: ISO/TC 172/SC 9 - Laser and electro-optical systems
• Drafting Committee: ISO/TC 172/SC 9/WG 1 - Terminology and test methods for electro-optical systems
• Current Stage: 9093 - International Standard confirmed
• Completion Date: 27-Sep-2023

Relations

• Revises: ISO/TS 17915:2013 - Optics and photonics — Measurement method of semiconductor lasers for sensing
• Effective Date: 24-Dec-2016

Standards Content (Sample)

INTERNATIONAL ISO
STANDARD 17915
First edition
2018-05
Optics and photonics —
Measurement method of
semiconductor lasers for sensing
Optique et photonique — Méthode de mesure des lasers semi-
conducteurs pour la sensibilité
Reference number
ISO 17915:2018(E)
©
ISO 2018

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ISO 17915:2018(E)

COPYRIGHT PROTECTED DOCUMENT
© ISO 2018
All rights reserved. Unless otherwise specified, or required in the context of its implementation, no part of this publication may
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Published in Switzerland
ii © ISO 2018 – All rights reserved

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ISO 17915:2018(E)

Contents Page
Foreword .iv
Introduction .v
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Optical sensing using semiconductor lasers . 1
4.1 General . 1
4.2 Semiconductor laser. 1
4.2.1 General. 1
4.2.2 Basic structure . 2
4.2.3 Transverse mode stabilizing structure . 2
4.2.4 Mode (wavelength) selection structure . 2
4.2.5 Active layer structure . 2
4.3 Common sensing technique and equipment using semiconductor lasers . 3
4.3.1 General. 3
4.3.2 Tunable laser absorption spectroscopy (TLAS). 3
4.3.3 Cavity ring down spectroscopy (CRDS) . 4
4.3.4 Photoacoustic spectroscopy (PAS) . 5
4.4 Temperature and current dependence of wavelength . 6
4.5 Effect of current injection on lasing wavelength . 8
4.6 Effect of ambient temperature on lasing wavelength . 9
5 Measurement method for temperature dep
...