Optics and photonics — Measurement method of semiconductor lasers for sensing

This document describes methods of measuring temperature and injected current dependence of lasing wavelengths, and lasing spectral line width in relation to semiconductor lasers for sensing applications. This document is applicable to all kinds of semiconductor lasers, such as edge-emitting type and vertical cavity surface emitting type lasers, bulk-type and (strained) quantum well lasers, and quantum cascade lasers, used for optical sensing in e.g. industrial, medical and agricultural fields.

Optique et photonique — Méthode de mesure des lasers semi-conducteurs pour la sensibilité

General Information

Status
Published
Publication Date
24-May-2018
Current Stage
9093 - International Standard confirmed
Start Date
27-Sep-2023
Completion Date
19-Apr-2025
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Standard
ISO 17915:2018 - Optics and photonics -- Measurement method of semiconductor lasers for sensing
English language
29 pages
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Standards Content (Sample)


INTERNATIONAL ISO
STANDARD 17915
First edition
2018-05
Optics and photonics —
Measurement method of
semiconductor lasers for sensing
Optique et photonique — Méthode de mesure des lasers semi-
conducteurs pour la sensibilité
Reference number
©
ISO 2018
© ISO 2018
All rights reserved. Unless otherwise specified, or required in the context of its implementation, no part of this publication may
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Published in Switzerland
ii © ISO 2018 – All rights reserved

Contents Page
Foreword .iv
Introduction .v
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Optical sensing using semiconductor lasers . 1
4.1 General . 1
4.2 Semiconductor laser. 1
4.2.1 General. 1
4.2.2 Basic structure . 2
4.2.3 Transverse mode stabilizing structure . 2
4.2.4 Mode (wavelength) selection structure . 2
4.2.5 Active layer structure . 2
4.3 Common sensing technique and equipment using semiconductor lasers . 3
4.3.1 General. 3
4.3.2 Tunable laser absorption spectroscopy (TLAS). 3
4.3.3 Cavity ring down spectroscopy (CRDS) . 4
4.3.4 Photoacoustic spectroscopy (PAS) . 5
4.4 Temperature and current dependence of wavelength . 6
4.5 Effect of current injection on lasing wavelength . 8
4.6 Effect of ambient temperature on lasing wavelength . 9
5 Measurement method for temperature dependence of wavelength .10
5.1 General .10
5.2 Description of measurement setup and requirements .10
5.3 Precautions to be observed .11
5.4 Measurement procedures.12
6 Measurement method for current dependence of wavelength .12
6.1 General .12
6.2 Description of measurement setup and requirements .12
6.3 Precautions to be observed .13
6.4 Measurement procedures.14
6.4.1 Static current dependence.14
6.4.2 Dynamic current coefficient .14
7 Measurement method of spectral line width .14
7.1 General .14
7.2 Description of measurement setup and requirements .15
7.3 Precautions to be observed .18
7.4 Measurement procedures.18
7.4.1 System employing two semiconductor lasers [shown in Figures 11 and 12] .18
7.4.2 Self-delayed heterodyne [shown in Figure 13] . .18
Annex A (informative) Essential ratings and characteristics .20
Bibliography .29
Foreword
ISO (the International Organization for Standardization) is a worldwide federation of national standards
bodies (ISO member bodies). The work of preparing International Standards is normally carried out
through ISO technical committees. Each member body interested in a subject for which a technical
committee has been established has the right to be represented on that committee. International
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ISO collaborates closely with the International Electrotechnical Commission (IEC) on all matters of
electrotechnical standardization.
The procedures used to develop this document and those intended for its further maintenance are
described in the ISO/IEC Directives, Part 1. In particular the different approval criteria needed for the
different types of ISO documents should be noted. This document was drafted in accordance with the
editorial rules of the ISO/IEC Directives, Part 2 (see www. iso. org/directives).
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. ISO shall not be held responsible for identifying any or all such patent rights. Details of
any patent rights identified during the development of the document will be in the Introduction and/or
on the ISO list of patent declarations received (see www. iso.o rg/patents).
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For an explanation on the voluntary nature of standards, the meaning of ISO specific terms and
expressions related to conformity assessment, as well as information about ISO's adherence to the
World Trade Organization (WTO) principles in the Technical Barriers to Trade (TBT) see the following
URL: www. iso. org/iso/foreword. html.
This document was prepared by Technical Committee ISO/TC 172, Optics and photonics, Subcommittee
SC 9, Laser and electro-optical systems.
This first edition cancels and replaces the Technical Specification ISO/TS 17915:2013, which has been
technically revised.
The main changes compared to ISO/TS 17915:2013 are as follows:
— interband cascade semiconductor lasers have been included in 4.2.5.
— in A.3: Regarding the monitor photodiode, “option” has been inserted.
— Tables in Annex A have been separated for clarity.
iv © ISO 2018 – All rights reserved

Introduction
Sensing technologies for materials related to the environment or wellness, etc., by using lasers have
been researched and developed in academic and industrial fields. Semiconductor lasers including
quantum cascade semiconductor lasers have been widely used in sensing applications because of their
advantages of compactness and wide selectivity of lasing wavelengths. The tunable laser absorption
spectroscopy, the cavity ring down spectroscopy and the photoacoustic spectroscopy are commonly
used sensing techniques. In those sensing techniques, wavelength and/or spectrum analysis by
changing temperature or injected current is the key for determining the composition or element of the
material or the mixture to be examined. Therefore measuring methods of semiconductor lasers for
sensing applications are described with an informative annex for an example of essential ratings and
characteristics.
INTERNATIONAL STANDARD ISO 17915:2018(E)
Optics and photonics — Measurement method of
semiconductor lasers for sensing
1 Scope
This document describes methods of measuring temperature and injected current dependence of lasing
wavelengths, and lasing spectral line width in relation to semiconductor lasers for sensing applications.
This document is applicable to all kinds of semiconductor lasers, such as edge-emitting type and vertical
cavity surface emitting type lasers, bulk-type and (strained) quantum well lasers, and quantum cascade
lasers, used for optical sensing in e.g. industrial, medical and agricultural fields.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any amendments) applies.
ISO 13695, Optics and photonics — Lasers and laser-related equipment — Test methods for the spectral
characteristics of lasers
3 Terms and definitions
No terms and definitions are listed in this document.
ISO and IEC maintain terminological databases for use in standardization at the following addresses:
— IEC Electropedia: available at https: //www .electropedia .org/
— ISO Online browsing platform: available at https: //www .iso .org/obp
4 Optical sensing using semiconductor lasers
4.1 General
The methods described in this document shall be followed in accordance with ISO 13695.
Optical sensing using tunable semiconductor laser spectroscopy has been widely used in various
engineering fields. For example, optical sensing is being used for bio-sensing and environmental
monitoring. Semiconductor lasers are key devices for those applications and are indispensable for
building sensing equipment. Semiconductor lasers and sensing techniques are described in 4.2 to 4.6.
4.2 Semiconductor laser
4.2.1 General
A semiconductor laser is an optical semiconductor device that emits coherent optical radiation in a
certain direction through stimulated emission resulting from electron transition when excited by an
electric current that exceeds the threshold current of the semiconductor laser. Here, the mechanism of
coherent optical radiation is divided into the following two categories:
1) electron-hole recombination due to interband electron transition between conduction and valence
band (bulk type) or between two quantized states (quantum well type, see 4.2.5) and
2) intraband electron transition between two quantized states (quantum cascade type, see 4.2.5).
Edge-emitting types with single lasing modes, such as distributed fe
...

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