ISO 21859:2019

Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for plasma resistance of ceramic components in semiconductor manufacturing equipment

This document specifies a test method for plasma resistance of ceramic components in semiconductor manufacturing equipment. It is applicable to ceramic components of plasma-resistant components in dry etching chambers used in semiconductor manufacturing.

Céramiques techniques — Méthode d’essai pour déterminer la résistance au plasma des composants céramiques dans les équipements de production à semi-conducteurs

General Information

• Status: Published
• Publication Date: 17-Jun-2019
• ICS: 81.060.30 - Advanced ceramics
• Technical Committee: ISO/TC 206 - Fine ceramics
• Drafting Committee: ISO/TC 206/WG 12 - Engineering applications
• Current Stage: 9093 - International Standard confirmed
• Start Date: 04-Oct-2024
• Completion Date: 13-Dec-2025

Overview

ISO 21859:2019 defines a standardized test method for assessing plasma resistance of fine ceramic components used in semiconductor manufacturing equipment. Specifically designed for ceramic parts in dry etching chambers, this international standard ensures consistent and reliable evaluation of plasma erosion on advanced technical ceramics. The test method focuses on measuring erosion depth and changes in surface roughness caused by plasma exposure, critical parameters for maintaining the integrity and performance of ceramic components in semiconductor fabrication.

This standard is published by the International Organization for Standardization (ISO) under Technical Committee ISO/TC 206, Fine Ceramics, and applies to plasma-resistant ceramic components such as electrostatic chucks, gas injectors, and viewing ports exposed to plasma environments during dry etching.

Key Topics

• Scope and Application
  Applicable to ceramic components in semiconductor manufacturing dry etching chambers, ISO 21859:2019 addresses the plasma resistance properties critical to advanced ceramics facing corrosive plasma sources.

• Test Environment & Apparatus
  Testing requires precise control of plasma-etching equipment, specifically reactive ion etching systems with 13.56 MHz radio-frequency plasma sources. The use of contact-probe profilometers and surface roughness profilometers compliant with ISO 18452, ISO 3274, and ISO 4287 ensures accurate measurement of erosion and surface texture changes.

• Measurement Principles
  The principle centers on comparing surface height differences between masked and plasma-exposed areas via profilometric scanning. Surface roughness parameters like Ra and Rz are measured before and after plasma exposure to quantify erosion and surface modification.

• Procedure
  Steps include preparing test pieces with appropriate masking, conducting plasma etching under controlled gas flow ratios (tetrafluoromethane and oxygen), measuring erosion depth and surface roughness post-test, and calculating mean erosion depth by averaging multiple measurements for accuracy.

• Reporting Requirements
  Test reports must contain detailed information such as identification of the testing body, test conditions, sample descriptions, erosion depth values, surface roughness data, and any relevant observations or deviations.

Applications

• Semiconductor Manufacturing
  ISO 21859:2019 is vital for manufacturers and suppliers of plasma-resistant ceramic components used in semiconductor dry etching chambers. By adhering to this standard, they can verify component durability and performance under plasma exposure conditions.

• Quality Control and R&D
  This test method supports quality assurance, material selection, and new ceramic development by providing standardized methods to measure plasma erosion, helping reduce manufacturing defects and improve equipment lifetime.

• Material Certification
  Certification bodies can use the standard to validate claims of plasma resistance in advanced ceramics, ensuring compliance with industry expectations and facilitating global trade.

• Equipment Design Optimization
  OEMs of semiconductor manufacturing tools can optimize materials and component designs based on plasma resistance data, thereby enhancing tool reliability and throughput.

Related Standards

• ISO 3274 - Geometrical Product Specifications (GPS): Surface texture using profile methods and contact (stylus) instruments.
• ISO 4287 - GPS surface texture: Profile methods including terms, definitions, and parameters for surface roughness.
• ISO 18452 - Fine ceramics - Determination of thickness for ceramic films by contact-probe profilometry.

These references complement ISO 21859:2019 by defining measurement techniques and parameters essential for accurate characterization of plasma erosion effects on ceramic components.

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Keywords: ISO 21859, plasma resistance, advanced ceramics, semiconductor manufacturing, dry etching chambers, contact-probe profilometer, surface roughness, erosion depth, fine ceramics standard, reactive ion etching, plasma etching test, ceramic component durability.

Standards Content (Sample)

INTERNATIONAL ISO
STANDARD 21859
First edition
2019-06
Fine ceramics (advanced ceramics,
advanced technical ceramics) — Test
method for plasma resistance of
ceramic components in semiconductor
manufacturing equipment
Céramiques techniques — Méthode d’essai pour déterminer
la résistance au plasma des composants céramiques dans les
équipements de production à semi-conducteurs
Reference number
©
ISO 2019
© ISO 2019
All rights reserved. Unless otherwise specified, or required in the context of its implementation, no part of this publication may
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Published in Switzerland
ii © ISO 2019 – All rights reserved

Contents Page
Foreword .iv
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Principle of measurement . 1
5 Test environment . 2
6 Apparatus . 2
7 Test pieces . 2
7.1 General consideration . 2
7.2 Surface conditions . 2
8 Procedure. 2
8.1 Measurement of surface roughness before a plasma resistance test . 2
8.2 Masking . 3
8.3 Plasma resistance test . 3
8.3.1 Setting of test pieces . 3
8.3.2 Test conditions. 3
8.4 Measurement of erosion depth . 3
8.5 Measurement of surface roughness after the plasma resistance test . 3
9 Calculation . 3
9.1 Calculation of mean erosion depth . 3
9.2 Calculation of surface roughness . 4
10 Test report . 4
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iv © ISO 2019 – All rights reserved

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