SIST EN 62047-5:2011
Semiconductor devices - Microelectromechanical devices - Part 5: RF MEMS switches
Semiconductor devices - Microelectromechanical devices - Part 5: RF MEMS switches
This part of IEC 62047 describes terminology, definition, symbols, test methods that can be used to evaluate and determine the essential ratings and characteristic parameters of RF MEMS switches. The statements made in this standardization are also applicable to RF (Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) switches with various structures, contacts (d.c. contact and capacitive contact), configurations (series and shunt), switching networks (SPST, SPDT, DPDT, etc.), and actuation mechanism such as electrostatic, electro-thermal, electromagnetic, piezoelectric, etc. The RF MEMS switches are promising devices in advanced mobile phones with multi-band/mode operation, smart radar systems, reconfigurable RF devices and systems, SDR (Software Defined Radio) phones, test equipments, tunable devices and systems, satellite, etc.
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 5: Hochfrequenz-MEMS-Schalter
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 5 : Commutateurs MEMS-RF
La CEI 62047-5:2011 décrit la terminologie, les définitions, les symboles et des méthodes d'essai qui peuvent être utilisés pour évaluer et déterminer les paramètres des caractéristiques et des valeurs assignées essentielles des commutateurs MEMS-RF. Les déclarations faites dans la présente normalisation sont également applicables aux commutateurs RF (radiofréquence) MEMS (systèmes microélectromécaniques) avec différentes structures, différents contacts (contact à courant continu et contact capacitif), différentes configurations (série et parallèle), différents réseaux de commutation (SPST, SPDT, DPDT, etc.), et différents mécanismes d'actionnement (électrostatique, électrothermique, électromagnétique, piézoélectrique, etc.). Les commutateurs MEMS-RF sont des dispositifs destinés à un avenir prometteur dans les domaines des téléphones mobiles perfectionnés fonctionnant sur plusieurs bandes ou dans plusieurs modes, des systèmes radars intelligents, des dispositifs et des systèmes RF reconfigurables, des téléphones SDR (radio logicielle), des équipements d'essai, des dispositifs et des systèmes accordables, des satellites, etc. Le contenu du corrigendum de mars 2012 a été pris en considération dans cet exemplaire.
Polprevodniški elementi - Mikroelektromehanski elementi - 5. del: Stikala RF MEMS
Ta del IEC 62047 opisuje terminologijo, definicijo, simbole in preskusne metode, ki se lahko uporabljajo za vrednotenje in določevanje bistvenih ocenitev in karakterističnih parametrov stikal RF MEMS. Izjave v tej standardizaciji veljajo tudi za stikala RF (radiofrekvenčna) MEMS (mikroelektromehanski sistemi) z različnimi strukturami, kontakti (enosmerni kontakt in kapacitivni kontakt), konfiguracijami (serijski in ranžirni), stikalnimi omrežji (SPST, SPDT, DPDT itd.) in aktivatorskim mehanizmom, kot so elektrostatični, elektrotermični, elektromagnetni, piezoelektrični itd. Stikala RF MEMS so obetavne naprave v naprednih mobilnih telefonih z večpasovnim/večnačinovnim delovanjem, pametnih radarskih sistemih, napravah RF in sistemih z zmožnostjo preoblikovanja, telefonih SDR (programsko definiran radio), preskusni opremi, nastavljivih napravah in sistemih, satelitih itd.
General Information
Standards Content (Sample)
SLOVENSKI STANDARD
SIST EN 62047-5:2011
01-oktober-2011
Polprevodniški elementi - Mikroelektromehanski elementi - 5. del: Stikala RF
MEMS
Semiconductor devices - Microelectromechanical devices - Part 5: RF MEMS switches
Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 5 :
Commutateurs MEMS-RF
Ta slovenski standard je istoveten z: EN 62047-5:2011
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN 62047-5:2011 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
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SIST EN 62047-5:2011
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SIST EN 62047-5:2011
EUROPEAN STANDARD
EN 62047-5
NORME EUROPÉENNE
August 2011
EUROPÄISCHE NORM
ICS 31.080.99
English version
Semiconductor devices -
Micro-electromechanical devices -
Part 5: RF MEMS switches
(IEC 62047-5:2011)
Dispositifs à semiconducteurs - Halbleiterbauelemente -
Dispositifs microélectromécaniques - Bauelemente der Mikrosystemtechnik -
Partie 5: Commutateurs MEMS-RF Teil 5: Hochfrequenz-MEMS-Schalter
(CEI 62047-5:2011) (IEC 62047-5:2011)
This European Standard was approved by CENELEC on 2011-08-17. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,
Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia,
Spain, Sweden, Switzerland and the United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Management Centre: Avenue Marnix 17, B - 1000 Brussels
© 2011 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62047-5:2011 E
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SIST EN 62047-5:2011
EN 62047-5:2011 - 2 -
Foreword
The text of document 47F/83/FDIS, future edition 1 of IEC 62047-5, prepared by SC 47F, Micro-
electromechanical systems, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC
parallel vote and was approved by CENELEC as EN 62047-5 on 2011-08-17.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent
rights.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
(dop) 2012-05-17
national standard or by endorsement
– latest date by which the national standards conflicting
(dow) 2014-08-17
with the EN have to be withdrawn
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 62047-5:2011 was approved by CENELEC as a European
Standard without any modification.
__________
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SIST EN 62047-5:2011
- 3 - EN 62047-5:2011
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.
NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.
Publication Year Title EN/HD Year
IEC 60747-1 2006 Semiconductor devices - - -
+ corr. August 2008 Part 1: General
IEC 60747-16-1 - Semiconductor devices - EN 60747-16-1 -
Part 16-1: Microwave integrated circuits -
Amplifiers
IEC 60747-16-4 2004 Semiconductor devices - EN 60747-16-4 2004
Part 16-4: Microwave integrated circuits -
Switches
IEC 60749-5 - Semiconductor devices - Mechanical and EN 60749-5 -
climatic test methods -
Part 5: Steady-state temperature humidity
bias life test
IEC 60749-10 - Semiconductor devices - Mechanical and EN 60749-10 -
climatic test methods -
Part 10: Mechanical shock
IEC 60749-12 - Semiconductor devices - Mechanical and EN 60749-12 -
climatic test methods -
Part 12: Vibration, variable frequency
IEC 60749-27 - Semiconductor devices - Mechanical and EN 60749-27 -
climatic test methods -
Part 27: Electrostatic discharge (ESD)
sensitivity testing - Machine model (MM)
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SIST EN 62047-5:2011
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SIST EN 62047-5:2011
IEC 62047-5
®
Edition 1.0 2011-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 5: RF MEMS switches
Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 5: Commutateurs MEMS-RF
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX V
ICS 31.080.99 ISBN 978-2-88912-584-5
® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale
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SIST EN 62047-5:2011
– 2 – 62047-5 IEC:2011
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
3.1 Switching operation . 7
3.2 Switching configuration . 7
3.3 Actuating mechanism . 7
3.4 Switching network configurations . 8
3.5 Reliability (performance) . 8
3.6 Electrical characteristics . 9
4 Essential ratings and characteristics . 10
4.1 Identification and types . 10
4.2 Application and specification description . 11
4.3 Limiting values and operating conditions . 11
4.4 DC and RF characteristics . 11
4.5 Mechanical and environmental characteristics . 12
4.6 Additional information . 12
5 Measuring methods . 12
5.1 General . 12
5.1.1 General precautions . 12
5.1.2 Characteristic impedances . 12
5.1.3 Handling precautions . 12
5.1.4 Types . 12
5.2 DC characteristics . 12
5.2.1 DC actuation voltage . 12
5.2.2 On or off resistance (d.c. contact or resistive type) . 14
5.2.3 On or off capacitance (capacitive type) . 15
5.2.4 Power consumption . 16
5.3 RF characteristics . 17
5.3.1 Insertion loss (L ) . 17
ins
5.3.2 Isolation (L ) . 19
iso
5.3.3 Voltage standing wave ratio (VSWR) . 20
5.3.4 Input power at the intercept point . 21
5.4 Switching characteristics . 21
5.4.1 General . 21
5.4.2 Switching time measurement . 21
6 Reliability (performance). 22
6.1 General . 22
6.2 Life time cycles . 22
6.2.1 General . 22
6.2.2 Cold switching . 23
6.2.3 Hot switching or power handling . 23
6.3 Temperature cycles . 24
6.3.1 General . 24
6.3.2 Test temperature . 24
6.3.3 Test cycle . 24
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SIST EN 62047-5:2011
62047-5 IEC:2011 – 3 –
6.4 High temperature and high humidity testing . 24
6.5 Shock testing . 25
6.6 Vibration testing . 25
6.7 Electrostatic discharge (ESD) sensitivity testing . 25
Annex A (informative) General description of RF MEMS Switches. 26
Annex B (informative) Geometry of RF MEMS switches . 27
Annex C (informative) Packaging of RF MEMS switches . 30
Annex D (informative) Failure mechanism of RF MEMS switches . 31
Annex E (informative) Applications of RF MEMS switches . 32
Annex F (informative) Measurement procedure of RF MEMS switches . 34
Figure 1 – Terminals of RF MEMS switch . 11
Figure 2 – Circuit diagram for measuring d.c. actuation voltage and RF characteristics
of RF MEMS switches . 13
Figure 3 – Circuit diagram for measuring impedance between the input and output
ports . 14
Figure 4 – Circuit diagram for measuring RF characteristics between the input and
output ports using a network analyzer . 18
Figure 5 – Circuit block diagram of a test setup to evaluate life time of RF MEMS
switch . 22
Figure 6 – Circuit block diagram of a test setup for power handling capability of RF
MEMS switch . 24
Figure B.1 – RF MEMS series d.c. contact switch with two contact areas. . 27
Figure B.2 – RF MEMS series d.c. contact switch with one contact area . 27
Figure B.3 – RF MEMS shunt d.c. contact switch . 28
Figure B.4 – RF MEMS series capacitive type switch with one contact area . 28
Figure B.5 – RF MEMS shunt capacitive type switch . 29
Figure F.1 – Measurement procedure of RF MEMS switches . 34
Table A.1 – Comparison of semiconductor and RF MEMS switches . 26
Table B.1 – Comparison of RF MEMS switches with different actuation mechanism . 29
Table D.1 – Comparison of failure mechanism of RF MEMS switches . 31
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SIST EN 62047-5:2011
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INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 5: RF MEMS switches
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
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agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
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3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
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4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
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6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
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expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62047-5 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47F/83/FDIS 47F/93/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts of the IEC 62047 series, under the general title Semiconductor devices –
Micro-electromechanical devices, can be found in the IEC website.
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SIST EN 62047-5:2011
62047-5 IEC:2011 – 5 –
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct
understanding of its contents. Users should therefore print this document using a
colour printer.
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SIST EN 62047-5:2011
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SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 5: RF MEMS switches
1 Scope
This part of IEC 62047 describes terminology, definition, symbols, test methods that can be
used to evaluate and determine the essential ratings and characteristic parameters of RF
MEMS switches. The statements made in this standardization are also applicable to RF
(Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) switches with various
structures, contacts (d.c. contact and capacitive contact), configurations (series and shunt),
switching networks (SPST, SPDT, DPDT, etc.), and actuation mechanism such as
electrostatic, electro-thermal, electromagnetic, piezoelectric, etc. The RF MEMS switches are
promising devices in advanced mobile phones with multi-band/mode operation, smart radar
systems, reconfigurable RF devices and systems, SDR (Software Defined Radio) phones, test
equipments, tunable devices and systems, satellite, etc.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the normative documents (including any amended documents) referred to applies.
IEC 60747-1: 2006, Semiconductor devices – Part 1: General
IEC 60747-16-1, Semiconductor devices – Part 16-1: Microwave integrated circuits –
Amplifiers
IEC 60747-16-4:2004, Semiconductor devices – Part 16-4: Microwave integrated circuits –
Switches
IEC 60749-5, Semiconductor devices – Mechanical and climatic test methods – Part 5:
Steady-state temperature humidity bias life test
IEC 60749-10, Semiconductor devices – Mechanical and climatic test methods – Part 10:
Mechanical shock
IEC 60749-12, Semiconductor devices – Mechanical and climatic test methods – Part 12:
Vibration, variable frequency
IEC 60749-27, Semiconductor devices – Mechanical and climatic test methods – Part 27:
Electrostatic discharge (ESD) sensitivity testing – Machine model (MM)
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
NOTE In the text of this standard, the term of switch is used instead of RF MEMS switch to improve the
readability.
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SIST EN 62047-5:2011
62047-5 IEC:2011 – 7 –
3.1 Switching operation
3.1.1
capacitive switch
switch whereby an RF signal is passed or blocked by a change of impedance ratio caused by
the capacitive effect of making contact using a movable metal plate onto a dielectric film
presented on a fixed metal plate
3.1.2
d.c. contact switch
switch whereby an RF signal is passed or blocked by a movable metal contact
3.2 Switching configuration
3.2.1
series switch
switch whereby an RF signal applied to the input port is directly passed to the output port
when a movable plate makes contact with a fixed plate
3.2.2
shunt switch
switch whereby an RF signal applied to the input port is passed to the ground plane when a
movable plate makes contact with a fixed plate
3.3 Actuating mechanism
3.3.1
electro-statically actuated switch
switch whereby a moving contact is pulled down onto the fixed plate by an electrostatic force
caused by the applied d.c. bias voltage, the moving plate returns to its original position when
the bias voltage is removed
NOTE Advantages are virtually zero power consumption, small electrode size, relatively short switching time, and
relatively simple fabrication and disadvantage is higher actuation voltage.
3.3.2
electro-magnetically actuated switch
switch whereby a movable plate or armature is pulled down onto a fixed plate by a magnetic
force generated by a permanent magnet or an energised electromagnet
NOTE Advantage is a low actuation voltage and disadvantages are complexity of fabrication and high power
consumption.
3.3.3
electro-thermally actuated switch
switch whereby a movable plate constructed of two or more differing materials with differential
thermal expansion coefficients deflects to contact a fixed plate or electrode
NOTE Advantages are nearly linear deflection-versus-power relations and environmental ruggedness and
disadvantages are high power consumption, low bandwidth, and relatively complex fabrication.
3.3.4
piezo-electrically actuated switch
switch whereby a movable constructed of piezoelectric materials deflects to contact a fixed
plate or electrode
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3.4 Switching network configurations
3.4.1
single-pole-single-throw switch
SPST
device with a single input and a single output, which is providing an ON-OFF switching
function with switch actuation
3.4.2
single-pole-double-throw switch
SPDT
device with a single input and two outputs, which is transferring the through connection from
one output to the other output with switch actuation
3.4.3
single-pole-multi-throw switch
SPMT
device with one input and multiple outputs whereby connection to one or the other of the
multiple outputs is determined by switch actuation
3.4.4
double-pole-double- throw switch
DPDT
device with two inputs and two outputs, which is transferring the through connection from one
output to the other output with switch actuation
3.4.5
multi-pole-multi-throw switch
MPMT
device with multi inputs and outputs, which is transferring the through connection from multi
outputs to the other multi outputs with switch actuation
3.5 Reliability (performance)
3.5.1
life time cycles
number of actuating times which the switches are operating with satisfactory electrical
performances in the on/off positions
NOTE Unlike the electronic switch, a mechanical switch may fail due to stiction (micro-welding and material
transfer) of a moving part and degradation of metal to metal contact used, whereas at electronic RF switches
(capacitive switch) the reliability is limited by dielectric charging (charge injection and charge trapping).
3.5.2
cold switching
performed switching where the RF power is not applied during the switch operation
NOTE It is useful for examining the durability of the switch electrode to see if it can withstand the physical
stresses of repeated switching.
3.5.3
hot switching
performed switching where the RF power is applied during the switch operation
NOTE The hot-switching tests are indicative of how the switch will survive under actual operating conditions, with
current flowing through the device.
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62047-5 IEC:2011 – 9 –
3.6 Electrical characteristics
3.6.1
d.c. characteristics
3.6.1.1
actuation voltage
d.c. voltage for the movable electrode (or membrane) of the switch being collapsed down onto
the fixed plate and kept securing RF characteristics desired
3.6.1.2
on resistance – DC contact type
electrical resistance which is measured across fully closed contacts at their associated
external terminals
3.6.1.3
off resistance – DC contact type
electrical resistance which is measured across fully opened contacts at their associated
external terminals
3.6.1.4
on capacitance – Capacitive type
electrical capacitance which is measured in the down-state position (the movable electrode
collapsed down on the dielectric layer on top of the fixed electrode) of the switch
3.6.1.5
off capacitance – Capacitive type
electrical capacitance which is measured in the up-state position of the switch (before the
movable electrode is being actuated)
3.6.1.6
power consumption
power consumed to pull down and hold the movable plate onto the fixed electrode when the
switch is ON
3.6.2
RF characteristics
3.6.2.1
insertion loss
[IEC 60747-16-4:2004, 3.1]
3.6.2.2
isolation
[IEC 60747-16-4:2004, 3.2]
NOTE It is caused by a RF energy leak from one conductor to another by radiation, ionization, capacitive coupling,
or Inductive coupling.
3.6.2.3
return loss
[IEC 60747-16-4:2004, 3.3]
3.6.2.4
voltage standing wave ratio
VSWR
ratio of the electrical field strength at a voltage maximum on a transmission line to the
electrical field strength of an adjacent voltage minimum
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3.6.2.5
resonant frequency
frequency occurred at LC series resonance when the switch is up-state and down-state
position, respectively
3.6.2.6
bandwidth
frequency range where the switch has good RF characteristics enough to use in subsystems
and system applications
NOTE It is usally expressed as either the frequency or percentage differences between the lower or the upper
relative 1 dB points of the frequency response curve.
3.6.2.7
power handling capability
capability of a switch to transmit a given amount of power through the device when the switch
is on
3.6.3
Switching characteristics
3.6.3.1
self actuation power
radio frequency power where the switch movable plate is self-actuated without any voltages
being applied directly to it
3.6.3.2
switching time
3.6.3.2.1
turn on time
[IEC 60747-16-4:2004, 3.6]
3.6.3.2.2
turn off time
[IEC 60747-16-4:2004, 3.7]
3.6.3.2.3
rise time
transition time of the switch from OFF to ON state
NOTE OFF state: 10 % of C , ON state: 90 % of C .
up down
[IEC 60747-16-4:2004, 3.8]
3.6.3.2.4
falling time
transition time of the switch from ON to OFF state
[IEC 60747-16-4:2004, 3.9]
4 Essential ratings and characteristics
4.1 Identification and types
General description of the function of RF MEMS switches and their applications should be
stated. The statement should include the details
...
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