SIST EN IEC 60749-18:2019

Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose) (IEC 60749-18:2019)

IEC 60749-18:2019 is available as IEC 60749-18:2019 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.

IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition:
- updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing;
- addition of a Bibliography, which includes ASTM standards relevant to this test method.

Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 18: Ionisierende Strahlung (Gesamtdosis) (IEC 60749-18:2019)

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 18: Rayonnements ionisants (dose totale) (IEC 60749-18:2019)

IEC 60749-18:2019 est disponible sous forme de IEC 60749-18:2019 RLV qui contient la Norme internationale et sa version Redline, illustrant les modifications du contenu technique depuis l'édition précédente.

L’IEC 60749-18:2019 présente une procédure d’essai permettant de définir les exigences pour soumettre à essai des circuits intégrés à semiconducteurs sous boîtier et des dispositifs discrets à semiconducteurs, concernant les effets des rayonnements ionisants (dose totale) provenant d’une source de rayons gamma au cobalt-60 (60Co). D’autres sources de rayonnements appropriées peuvent être utilisées. Le présent document ne concerne que les irradiations continues et ne s’applique pas aux irradiations pulsées. Il est destiné aux applications des domaines militaire et aérospatial. Il s’agit d’un essai destructif. Cette édition inclut les modifications techniques majeures suivantes par rapport à l’édition précédente:
- mises à jour apportées aux paragraphes afin de mieux aligner la méthode d’essai avec la méthode 1019 du document MIL-STD 883J, comprenant l’utilisation de l’essai de sensibilité accrue au faible débit de dose (ELDRS);
- ajout d’une bibliographie, comprenant les normes ASTM correspondant à la présente méthode d’essai.

Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 18. del: Ionizirajoče sevanje (skupni odmerek) (IEC 60749-18:2019)

Ta del standarda IEC 60749 vsebuje preskusni postopek za določanje zahtev za preskušanje pakiranih polprevodniških integriranih vezij in diskretnih polprevodniških elementov, potrebnih za ugotavljanje učinkov ionizirajočega sevanja (skupni odmerek) iz vira gama žarkov kobalta-60 (60Co). Uporabiti je mogoče tudi druge primerne vire sevanja. V tem postopku so predstavljeni štirje preskusi: a) standardni preskus obsevanja pri sobni temperaturi; b) preskus obsevanja pri povišani temperaturi/kriogeni temperaturi; c) preskus pospešenega žarjenja; d) preskus povečane občutljivosti na majhne odmerke (ELDRS). Preskus pospešenega žarjenja ocenjuje, kako pomembni so učinki ionizirajočega sevanja na elemente pri nizkih odmerkih ali nekaterih drugih vrstah uporabe, kjer je učinek na elemente odvisen od časa. Preskus ELDRS določa, ali se naprave z bipolarnimi linearnimi komponentami občutneje poškodujejo zaradi sevanja z majhnimi odmerki. Dokument obravnava samo enakomerno obsevanje in se ne uporablja za impulzno obsevanje. Namenjen je za vojaško uporabo in uporabo v vesolju. Preskus v dokumentu lahko povzroči resno poslabšanje električnih lastnosti obsevanih naprav in se zato obravnava kot porušitveni preskus.

General Information

• Status: Published
• Publication Date: 18-Jun-2019
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: I11 - Imaginarni 11
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 12-Jun-2019
• Due Date: 17-Aug-2019
• Completion Date: 19-Jun-2019
• Ref Project: EN IEC 60749-18:2019 - Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)

Relations

• Revised: SIST EN 60749-18:2004 - Semiconductor devices - Mechanical and climatic test methods -- Part 18: Ionizing radiation (total dose)
• Effective Date: 20-Mar-2018
• Replaces: SIST EN 60749-18:2004 - Semiconductor devices - Mechanical and climatic test methods -- Part 18: Ionizing radiation (total dose)
• Effective Date: 04-Jun-2019

Standards Content (Sample)

SLOVENSKI STANDARD
SIST EN IEC 60749-18:2019
01-september-2019
Nadomešča:
SIST EN 60749-18:2004
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 18. del:
Ionizirajoče sevanje (skupni odmerek) (IEC 60749-18:2019)
Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing
radiation (total dose) (IEC 60749-18:2019)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 18:
Ionisierende Strahlung (Gesamtdosis) (IEC 60749-18:2019)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie
18: Rayonnements ionisants (dose totale) (IEC 60749-18:2019)
Ta slovenski standard je istoveten z: EN IEC 60749-18:2019
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN IEC 60749-18:2019 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN IEC 60749-18:2019

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SIST EN IEC 60749-18:2019


EUROPEAN STANDARD EN IEC 60749-18

NORME EUROPÉENNE

EUROPÄISCHE NORM
May 2019
ICS 31.080.01 Supersedes EN 60749-18:2003
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 18: Ionizing radiation (total dose)
(IEC 60749-18:2019)
Dispositifs à semiconducteurs - Méthodes d'essais Halbleiterbauelemente - Mechanische und klimatische
mécaniques et climatiques - Partie 18: Rayonnements Prüfverfahren - Teil 18: Ionisierende Strahlung
ionisants (dose totale) (Gesamtdosis)
(IEC 60749-18:2019) (IEC 60749-18:2019)
This European Standard was approved by CENELEC on 2019-05-15. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden,
Switzerland, Turkey and the United Kingdom.


European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2019 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
 Ref. No. EN IEC 60749-18:2019 E

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SIST EN IEC 60749-18:2019
EN IEC 60749-18:2019 (E)
European foreword
The text of document 47/2539/FDIS, future edition 2 of IEC 60749-18, prepared by IEC/TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN IEC 60749-18:2019.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2020-02-15
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2022-05-15
document have to be withdrawn

This document supersedes EN 60749-18:2003.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.

Endorsement notice
The text of the International Standard IEC 60749-18:2019 was approved by CENELEC as a European
Standard without any modification.


2

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SIST EN IEC 60749-18:2019



IEC 60749-18

®


Edition 2.0 2019-04




INTERNATIONAL



STANDARD




NORME



INTERNATIONALE











Semiconductor devices – Mechanical and climatic test methods –

Part 18: Ionizing radiation (total dose)




Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –

Partie 18: Rayonnements ionisants (dose totale)
















INTERNATIONAL

ELECTROTECHNICAL

COMMISSION


COMMISSION

ELECTROTECHNIQUE


INTERNATIONALE




ICS 31.080.01 ISBN 978-2-8322-6755-4




Warning! Make sure that you obtained this publication from an authorized distributor.

Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.

® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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SIST EN IEC 60749-18:2019
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CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Test apparatus . 8
4.1 Choice of apparatus . 8
4.2 Radiation source . 8
4.3 Dosimetry system . 8
4.4 Electrical test instruments . 8
4.5 Test circuit board(s) . 8
4.6 Cabling . 9
4.7 Interconnect or switching system . 9
4.8 Environmental chamber . 9
4.9 Irradiation temperature chamber . 9
5 Procedure . 9
5.1 Test plan . 9
5.2 Sample selection and handling . 9
5.3 Burn-in . 10
5.4 Dosimetry measurements . 10
5.5 Lead/aluminium (Pb/Al) container . 10
5.6 Radiation level(s) . 10
5.7 Radiation dose rate . 10
5.7.1 Radiation dose rate determination . 10
5.7.2 Condition A . 11
5.7.3 Condition B . 11
5.7.4 Condition C . 11
5.7.5 Condition D . 11
5.7.6 Condition E . 11
5.8 Temperature requirements . 11
5.8.1 Room temperature radiation . 11
5.8.2 Elevated temperature irradiation . 11
5.8.3 Cryogenic temperature irradiation . 12
5.9 Electrical performance measurements . 12
5.10 Test conditions . 12
5.10.1 Choice of test conditions. 12
5.10.2 In-flux testing . 12
5.10.3 Remote testing . 12
5.10.4 Bias and loading conditions . 13
5.11 Post-irradiation procedure . 13
5.12 Extended room temperature annealing test . 14
5.12.1 Choice of annealing test . 14
5.12.2 Need to perform an extended room temperature annealing test . 14
5.12.3 Extended room temperature annealing test procedure . 14
5.13 MOS accelerated annealing test . 15
5.13.1 Choice of MOS accelerated annealing test . 15

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5.13.2 Need to perform accelerated annealing test . 15
5.13.3 Accelerated annealing test procedure . 16
5.14 Test procedure for bipolar and BiCMOS linear or mixed signal devices with
intended application dose rates less than 0,5 Gy(Si)/s . 16
5.14.1 Need to perform ELDRS testing . 16
5.14.2 Determination of whether a part exhibits ELDRS. 17
5.14.3 Characterization of ELDRS parts to determine the irradiation conditions
for production or lot acceptance testing . 17
5.14.4 Low dose rate or elevated temperature irradiation test for bipolar or
BiCMOS linear or mixed-signal devices . 18
5.15 Test report . 18
6 Summary . 18
Bibliography . 21

Figure 1 – Flow diagram for ionizing radiation test procedure for MOS and digital
bipolar devices. 19
Figure 2 – Flow diagram for ionizing radiation test procedure for bipolar (or BiCMOS)
linear or mixed-signal devices . 20

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INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 18: Ionizing radiation (total dose)

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
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4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
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between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
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5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
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6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
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expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60749-18 has been prepared by IEC technical committee 47:
Semiconductor devices.
This second edition cancels and replaces the first edition published in 2002. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) updates to subclauses to better align the test method with MIL-STD 883J, method 1019,
including the use of enhanced low dose rate sensitivity (ELDRS) testing;
b) addition of a Bibliography, which includes ASTM standards relevant to this test method.

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SIST EN IEC 60749-18:2019
IEC 60749-18:2019 © IEC 2019 – 5 –
The text of this International Standard is based on the following documents:
FDIS Report on voting
47/2539/FDIS 47/2554/RVD

Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 60749 series, published under the general title Semiconductor
devices – Mechanical and climatic test methods, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.

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SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 18: Ionizing radiation (total dose)



1 Scope
This part of IEC 60749 provides a test procedure for defining requirements for testing
packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing
60
radiation (total dose) effects from a cobalt-60 ( Co) gamma ray source. Other suitable
radiation sources can be used.
There are four tests presented in this procedure:
a) a standard room temperature irradiation test;
b) an irradiation at elevated temperature/cryogenic temperature test;
c) an accelerated annealing test;
d) an enhanced low dose rate sensitivity (ELDRS) test.
The accelerated annealing test estimates how dose rate ionizing radiation effects on devices
is important for low dose rate or certain other applications in which devices can exhibit
significant time-dependent effects. The ELDRS test determines if devices with bipolar linear
components exhibit sensitivity to enhanced radiation-induced damage at low dose rates.
This document addresses only steady-state irradiations, and is not applicable to pulse type
irradiations.
It is intended for military- and aerospace-related applications.
This document can produce severe degradation of the electrical properties of irradiated
devices and thus is considered a destructive test.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1
ionizing radiation effects, pl
changes in the electrical parameters of a device or integrated circuit resulting from radiation-
induced charge
Note 1 to entry: These are also referred to as total dose effects.

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3.2
in-flux test
electrical measurements made on devices during irradiation exposure
3.3
internal dose pattern
logic condition of all elements within a logic circuit during radiation exposure
3.4
non in-flux test
electrical measurements made on devices at any time other than during irradiation
3.5
remote test
electrical measurements made on devices that are physically removed from the radiation
location
3.6
time-dependent effect
TDE
significant degradation in electrical parameters caused by the growth or annealing, or both, of
radiation-induced trapped charge after irradiation
Note 1 to entry: Similar effects also take place during irradiation.
Note 2 to entry: This note applies to the French language only.
3.7
accelerated annealing test
procedure utilizing elevated temperature to accelerate time-dependent effects
3.8
enhanced low dose rate sensitivity
ELDRS
part that shows enhanced radiation-induced damage at dose rates below 0,5 Gy(Si)/s
Note 1 to entry: This note applies to the French language only.
3.9
overtest
factor that is applied to the specification dose to determine the test dose level that the
samples have to pass to be acceptable at the specification level
Note 1 to entry: An overtest factor of 1,5 means that the parts should be tested at 1,5 times the specification dose.
3.10
parameter delta design margin
PDDM
design margin that is applied to the radiation-induced change in an electrical parameter
Note 1 to entry: For a PDDM of 2 the change in a parameter at a specified dose from the pre-irradiation value is
multiplied by two and added to the pre-irradiation value to see if the sample exceeds the post-irradiation parameter
limit. For example, if the pre-irradiation value of base current I is 30 nA and the post-irradiation value at 200 Gy(Si)
b
is 70 nA (change in I is 40 nA), then for a PDDM of 2 the post-irradiation value would be 110 nA
b
(30 nA + 2 x 40 nA). If the allowable post-irradiation limit is 100 nA, the part would fail.

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4 Test apparatus
4.1 Choice of apparatus
The apparatus shall consist of the radiation source, electrical test instrumentation, test circuit
board(s), cabling, interconnect board or switching system, an appropriate dosimetry
measurement system, and an environmental chamber (if required for time-dependent effects
measurements). Adequate precautions shall be observed to obtain an electrical measurement
system with sufficient insulation, ample shielding, satisfactory grounding, and suitable low
noise characteristics.
4.2 Radiation source
60
The radiation source used in the test shall be the uniform field of a Co gamma ray source.
Uniformity of the radiation field in the volume where devices are irradiated shall be within ±10 %
as measured by the dosimetry system, unless otherwise specified. The intensity of the gamma
60
ray field of the Co source shall be known with an uncertainty of no more than ±5 %. Field
uniformity and intensity can be affected by changes in the location of the device with respect
to the radiation source and the presence of radiation absorption and scattering materials.
4.3 Dosimetry system
An appropriate dosimetry system shall be provided that is capable of carrying out the
measurements called for in 5.3 (see Bibliography).
4.4 Electrical test instruments
All instrumentation used for electrical measurements shall have the stability, accuracy, and
resolution required for accurate measurement of the electrical parameters. Any
instrumentation required to operate in a radiation environment shall be appropriately shielded.
4.5 Test circuit board(s)
Devices to be irradiated shall either be mounted on or connected to circuit boards together
with any associated circuitry necessary for device biasing during irradiation or for in situ
measurements. Unless otherwise specified, all device input terminals and any others
which can affect the radiation response shall be electrically connected during irradiation,
i.e. not left floating.
The geometry and materials of the completed board shall allow uniform irradiation of the
devices under test. Good design and construction practices shall be used to prevent
oscillations, minimize leakage currents, prevent electrical damage and obtain accurate
measurements. Only sockets that are radiation resistant and do not exhibit significant
leakages (relative to the devices under test) shall be used to mount devices and associated
circuitry to the test board(s).
All apparatus used repeatedly in radiation fields shall be checked periodically for physical or
electrical degradation. Components which are placed on the test circuit board, other than
devices under test, shall be insensitive to the accumulated radiation or they shall be shielded
from the radiation. Test fixtures shall be made such that materials will not perturb the
uniformity of the radiation field intensity on the devices under test.
Leakage current shall be measured outside the field of radiation. With no devices installed in
the sockets, the test circuit board shall be connected to the test system such that all expected
sources of noise and interference are operative. With the maximum specified bias for the test
device applied, the leakage current between any two terminals shall not exceed 10 % of the
lowest current limit value in the pre-irradiation device specification.

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Test circuit boards used to bias devices during accelerated annealing shall be capable of
withstanding the temperature requirements of the accelerated annealing test and shall be
checked before and after testing for physical and electrical degradation.
4.6 Cabling
Cables connecting the test circuit boards in the radiation field to the test instrumentation shall
be as short as possible. If long cables are necessary, line drivers can be required. The cables
shall have low capacitance and low leakage to ground, and low leakage between wires.
4.7 Interconnect or switching system
This system shall be located outside the radiation environment location, and provides the
interface between the test instrumentation and the devices under test. It is part of the entire
test system and subject to the limitation specified in 4.5 for leakage between terminals.
4.8 Environmental chamber
The environmental chamber for time-dependent effects testing, if required, shall be capable of
maintaining the selected accelerated annealing temperature within ±5 °C.
4.9 Irradiation temperature chamber
The irradiation temperature chamber, if required for elevated temperature irradiation should
be capable of maintaining a circuit under test at 100 °C ± 5 °C while it is being irradiated. The
chamber should be capable of raising the temperature of the circuit under test from room
temperature to the irradiation temperature within a reasonable time prior to irradiation and
cooling the circuit under test from the irradiation temperature to room temperature in less than
20 min following irradiation. The irradiation bias shall be maintained during the heating and
cooling. The method for raising, maintaining and lowering the temperature of the circuit under
test can be by conduction through a heat sink using heating and cooling fluids, by convection
using forced hot and cool air, or other means that will achieve the proper results. For
cryogenic temperature irradiations, the chamber should be capable of maintaining the test
device/unit at the required cryogenic temperature within ±5 °C (e.g., liquid helium or liquid
nitrogen) while it is being irradiated. The chamber should be capable of maintaining the
cryogenic temperature of the test device/unit during post-irradiation electrical testing.
5 Procedure
5.1 Test plan
The test devices shall be irradiated and subjected to accelerated annealing testing (if required
for time-dependent effects testing) as specified by a test plan. This plan shall specify the
device description, irradiation conditions, device bias conditions, dosimetry system, operating
conditions, measurement parameters and conditions and accelerated annealing test
conditions (if required).
5.2 Sample selection and handling
Only devices that have passed the electrical specifications as defined in the test plan shall be
submitted to radiation testing. Unless otherwise specified, the test samples shall be randomly
selected from the parent population and identically packaged. Each part shall be individually
identifiable to enable pre- and post-irradiation comparison. For device types that are
electrostatic discharge (ESD)-sensitive, proper handling techniques shall be used to prevent
damage to the devices.

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5.3 Burn-in
For some devices, there are differences in the total dose radiation response before and after
burn-in. Unless it has been shown by prior characterization or by design that burn-in has a
negligible effect (parameters remain within post-irradiation specified electrical limits) on the
total dose radiation response, then one of the following functions shall take place:
a) the manufacturer shall subject the radiation samples to the specified burn-in conditions
prior to conducting total dose radiation testing; or
b) the manufacturer shall develop a correction factor, (which is acceptable to the parties to
the test) taking into account the changes in total dose response resulting from subjecting
the product to burn-in. The correction factor shall
...