Semiconductor devices -- Part 16-1: Microwave integrated circuits - Amplifiers

Halbleiterbauelemente -- Teil 16-1: Integrierte Mikrowellen-Verstärker

Dispositifs à semiconducteurs -- Partie 16-1: Circuits intégrés hyperfréquences - Amplificateurs

Polprevodniške naprave - 16-1. del: Mikrovalovna integrirana vezja - Ojačevalniki (IEC 60747-16-1:2001/A1:2007)

General Information

Status
Published
Publication Date
23-Oct-2007
Technical Committee
Current Stage
6060 - National Implementation/Publication (Adopted Project)
Start Date
17-Oct-2007
Due Date
22-Dec-2007
Completion Date
24-Oct-2007

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SLOVENSKI STANDARD
SIST EN 60747-16-1:2004/A1:2007
01-december-2007

3ROSUHYRGQLãNHQDSUDYHGHO0LNURYDORYQDLQWHJULUDQDYH]MD2MDþHYDOQLNL

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Semiconductor devices -- Part 16-1: Microwave integrated circuits - Amplifiers
Halbleiterbauelemente -- Teil 16-1: Integrierte Mikrowellen-Verstärker

Dispositifs à semiconducteurs -- Partie 16-1: Circuits intégrés hyperfréquences -

Amplificateurs
Ta slovenski standard je istoveten z: EN 60747-16-1:2002/A1:2007
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
31.200 Integrirana vezja, Integrated circuits.
mikroelektronika Microelectronics
SIST EN 60747-16-1:2004/A1:2007 en,de

2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

---------------------- Page: 1 ----------------------
EUROPEAN STANDARD
EN 60747-16-1/A1
NORME EUROPÉENNE
February 2007
EUROPÄISCHE NORM
ICS 31.080.99
English version
Semiconductor devices -
Part 16-1: Microwave integrated circuits -
Amplifiers
(IEC 60747-16-1:2001/A1:2007)
Dispositifs à semiconducteurs - Halbleiterbauelemente -
Partie 16-1: Circuits intégrés Teil 16-1: Integrierte
hyperfréquences - Mikrowellen-Verstärker
Amplificateurs (IEC 60747-16-1:2001/A1:2007)
(CEI 60747-16-1:2001/A1:2007)

This amendment A1 modifies the European Standard EN 60747-16-1:2002; it was approved by CENELEC on

2007-02-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which

stipulate the conditions for giving this amendment the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on

application to the Central Secretariat or to any CENELEC member.

This amendment exists in three official versions (English, French, German). A version in any other language

made by translation under the responsibility of a CENELEC member into its own language and notified to the

Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Cyprus, the

Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,

Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain,

Sweden, Switzerland and the United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Central Secretariat: rue de Stassart 35, B - 1050 Brussels

© 2007 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.

Ref. No. EN 60747-16-1:2002/A1:2007 E
---------------------- Page: 2 ----------------------
EN 60747-16-1:2002/A1:2007 - 2 -
Foreword

The text of document 47E/305/FDIS, future amendment 1 to IEC 60747-16-1:2001, prepared by SC 47E,

Discrete semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to the

IEC-CENELEC parallel vote and was approved by CENELEC as amendment A1 to EN 60747-16-1:2002

on 2007-02-01.
The following dates were fixed:
– latest date by which the amendment has to be
implemented at national level by publication of
(dop) 2007-11-01
an identical national standard or by endorsement
– latest date by which the national standards conflicting
(dow) 2010-02-01
with the amendment have to be withdrawn
Annex ZA has been added by CENELEC.
__________
Endorsement notice

The text of amendment 1:2006 to the International Standard IEC 60747-16-1:2001 was approved by

CENELEC as an amendment to the European Standard without any modification.
__________
---------------------- Page: 3 ----------------------
- 3 - EN 60747-16-1:2002/A1:2007
Replace Annex ZA of EN 60747-16-1:2002 by:
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications

The following referenced documents are indispensable for the application of this document. For dated

references, only the edition cited applies. For undated references, the latest edition of the referenced

document (including any amendments) applies.

NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD

applies.
Publication Year Title EN/HD Year
IEC 60617 data- Graphical symbols for diagrams - -
base
IEC 60747-1 2006 Semiconductor devices - - -
Part 1: General
IEC 60747-4 - Semiconductor devices - Discrete devices - - -
Part 4: Microwave diodes and transistors
IEC 60747-7 2000 Semiconductor devices - - -
Part 7: Bipolar transistors
IEC 60747-16-2 2001 Semiconductor devices - - -
Part 16-2: Microwave integrated circuits -
Frequency prescalers
IEC 60747-16-4 2004 Semiconductor devices - EN 60747-16-4 2004
Part 16-4: Microwave integrated circuits -
Switches
IEC 60748-2 1997 Semiconductor devices - Integrated circuits - - -
Part 2: Digital integrated circuits
IEC 60748-3 1986 Semiconductors devices - Integrated circuits -- -
Part 3: Analogue integrated circuits
IEC 60748-4 1997 Semiconductor devices - Integrated circuits - - -
Part 4: Interface integrated circuits
IEC/TS 61340-5-1 1998 Electrostatics -

+ corr. February 1999 Part 5-1: Protection of electronic devices EN 61340-5-1 2001

from electrostatic phenomena - General + corr. April 2001
requirements
IEC/TS 61340-5-2 1999 Electrostatics - EN 61340-5-2 2001
Part 5-2: Protection of electronic devices + corr. August 2001
from electrostatic phenomena - User guide
At draft stage.
---------------------- Page: 4 ----------------------
INTERNATIONAL IEC
STANDARD 60747-16-1
2001
AMENDMENT 1
2007-01
Amendment 1
Semiconductor devices –
Part 16-1:
Microwave integrated circuits –
Amplifiers
© IEC 2007 Droits de reproduction réservés ⎯ Copyright - all rights reserved

International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland

Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch Web: www.iec.ch

PRICE CODE
Commission Electrotechnique Internationale Q
International Electrotechnical Commission
МеждународнаяЭлектротехническаяКомиссия
For price, see current catalogue
---------------------- Page: 5 ----------------------
– 2 – 60747-16-1 Amend. 1 © IEC:2006(E)
FOREWORD

This amendment has been prepared by subcommittee 47E: Discrete semiconductor devices,

of IEC technical committee 47: Semiconductor devices.
The text of this amendment is based on the following documents:
FDIS Report on voting
47E/305/FDIS 47E/317/RVD

Full information on the voting for the approval of this amendment can be found in the report

on voting indicated in the above table.

The committee has decided that the contents of this amendment and the base publication will

remain unchanged until the maintenance result date indicated on the IEC web site under

"http://webstore.iec.ch" in the data related to the specific publication. At this date, the

publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
_____________
Page 2
CONTENTS

Replace the titles of Subclauses 5.11, 5.13, 5.14, 5.15, 5.19, and 5.21 by the following new

titles:
5.11 Intermodulation distortion (two-tone) (P /P )
1 n
5.13 Magnitude of the input reflection coefficient (input return loss) (|S |)
5.14 Magnitude of the output reflection coefficient (output return loss) (|S |)
5.15 Magnitude of the reverse transmission coefficient (isolation) (|S |)
5.19 nth order harmonic distortion ratio (P /P )
1 nth
5.21 Spurious intensity under specified load VSWR (P /P )
o sp
Add the titles of following new clause and subclauses:
5.22 Adjacent channel power ratio (P /P )
o(mod) adj
6 Verifying methods
6.1 Load mismatch tolerance (Ψ )
6.2 Source mismatch tolerance (Ψ )
6.3 Load mismatch ruggedness (Ψ )
Add the titles of following new figures:
Figure 12 – Circuit for the measurement of the adjacent channel power ratio
Figure 13 – Circuit for the verification of load mismatch tolerance in method 1
Figure 14 – Circuit for the verification of load mismatch tolerance in method 2

Figure 15 – Circuit for the verification of source mismatch tolerance in method 1

Figure 16 – Circuit for the verification of source mismatch tolerance in the method 2

Figure 17 – Circuit for the verification of load mismatch ruggedness
---------------------- Page: 6 ----------------------
60747-16-1 Amend. 1 © IEC:2006(E) – 3 –
Page 5
2 Normative references

Replace existing references IEC 60617-12, IEC 60617-13 and IEC 60747-1 as follows:

IEC 60617:2001, Graphical symbols for diagrams
IEC 60747-1:2006, Semiconductor devices – Part 1: General

IEC 60747-4:-, Semiconductor devices – Discrete devices – Part 4: Microwave diodes and

transistors

IEC 60747-16-2:2001, Semiconductor devices – Part 16-2: Microwave integrated circuits –

Frequency prescalers

IEC 60747-16-4:2004, Semiconductor devices – Part 16-4: Microwave integrated circuits –

Switches

IEC/TS 61340-5-1:1998, Electrostatics - Part 5-1: Protection of electronic devices from

electrostatic phenomena - General requirements

IEC/TS 61340-5-2:1999, Electrostatics - Part 5-2: Protection of electronic devices from

electrostatic phenomena - User guide
3 Terminology

Replace, on pages 6 and 7, the terms 3.7, 3.9, 3.10, 3.11, 3.14, and 3.16 by the following new

terms:
3.7
intermodulation distortion P /P
1 n

ratio of the fundamental component of the output power to the nth order component of the

output power, at a specified input power
3.9
magnitude of the input reflection coefficient
(input return loss)
|S |
see 3.5.2.1 of IEC 60747-7
3.10
magnitude of the output reflection coefficient
(output return loss)
|S |
see 3.5.2.2 of IEC 60747-7
3.11
magnitude of the reverse transmission coefficient
(isolation)
|S |
see 3.5.2.4 of IEC 60747-7
3.14
nth order harmonic distortion ratio P /P
1 nth

ratio of the power of the fundamental frequency measured at the output port of the device to

the power of the nth order harmonic component measured at the output port for a specified

output power
—————————

The second edition of IEC 60747-4, which is cited in this standard, and to which terms introduced in this

amendment refer, is currently in preparation (ADIS).
---------------------- Page: 7 ----------------------
– 4 – 60747-16-1 Amend. 1 © IEC:2006(E)
3.16
spurious intensity under specified load VSWR P /P
o sp

ratio of the power of the fundamental frequency measured at the output port of the device to

the maximum spurious power measured at the output port under specified load VSWR

Add the following new terms:
3.17
output power
see 3.3 of IEC 60747-16-2
3.18
output power at 1 dB gain compression
o(1dB)
see 8.2.13 of IEC 60747-4
3.19
noise figure
see 702-08-57 of IEC 60050-702
3.20
power added efficiency
add
see 8.2.15 of IEC 60747-4
3.21
adjacent channel power ratio
P /P
o(mod) adj
see 3.10 of IEC 60747-16-4
3.22
load mismatch tolerance
see 7.2.20 of IEC 60747-4
3.23
source mismatch tolerance
see 7.2.21 of IEC 60747-4
3.24
load mismatch ruggedness
see 7.2.22 of IEC 60747-4
Page 9
4.3.1 Detailed block diagram – Functional blocks
Replace, in the last paragraph, “IEC 60617-12 or IEC 60617-13” by “IEC 60617” .
Page 12
4.6.2 Dynamic or a.c. characteristics

Replace the title and parameters 4.6.2.10, 4.6.2.20 and 4.6.22 by the following new title and

new parameters:
---------------------- Page: 8 ----------------------
60747-16-1 Amend. 1 © IEC:2006(E) – 5 –
4.6.2 Dynamic or r.f. characteristics
Types
Parameters Min. Max.
A B C D
+ + +
Intermodulation distortion
4.6.2.10
4.6.2.20 nth order harmonic distortion ratio + +
(where appropriate) (note 2)
+ +
Spurious intensity under specified load VSWR
4.6.2.22
(where appropriate) (note 2)
Add the following new parameters:
Types
Parameters Min. Max.
A B C D
+ +
Adjacent channel power ratio (where appropriate)
4.6.2.23
+ +
Load mismatch tolerance (where appropriate)
4.6.2.24
+ +
4.6.2.25 Source mismatch tolerance (where appropriate)
+ +
4.6.2.26 Load mismatch ruggedness (where appropriate)
Page 14
4.7 Mechanical and environmental ratings, characteristics and data

Replace ”IEC 60747-1, Chapter VI, clause 7” by “Subclause 5.10 and 5.11 of IEC 60747-

1:2006”.
4.8.8 Handling precautions
Replace “IEC 60747-1, Chapter IX” by “IEC 61340-5-1 and IEC 61340-5-2“.
Page 15
5.1.2 General precautions

Replace “clause 2 of IEC 60747-1, Chapter VII, Section One” by “clause 6.3, 6.4 and 6.6 of

IEC 60747-1:2006”.
5.1.3 Handling precautions

Replace “clause 1 of IEC 60747-1, Chapter IX” by “IEC 61340-5-1 and IEC 61340-5-2”.

---------------------- Page: 9 ----------------------
– 6 – 60747-16-1 Amend. 1 © IEC:2006(E)
Page 25
Replace the existing title of Subclause 5.11 by the following new title:
5.11 Intermodulation distortion (two-tone) (P /P )
1 n
5.11.3 Principle of measurement
Replace, in the first line “P and P ” by “P and P ”.
n 1 1 n
Replace Equation (14) by the following:
P = P + L (14)
1 b 2
Replace the text after Equations (13), (14), (15) and (16) as follows:
where

P and P are the powers of the fundamental signal and the intermodulation distortion,

1 n
respectively;

P , P and P are the values indicated by the spectrum analyser corresponding to P , P and

a b c i 1
P , respectively:
L is the difference between the loss L and L where L is the loss from point E
1 A B A
to point A and L is the loss from point E to point B shown in Figure 3,

respectively. L is the circuit loss from point C to point D shown in Figure 3. P ,

2 i
P , P , P , P and P are expressed in dBm. L and L are expressed in
1 n a b c 1 2
decibels.
/P , which is expressed in dBc, is derived from Equations
The intermodulation distortion, P
1 n
(14) and (15) as follows:
P /P = P – P = P – P (16)
1 n 1 n b c
Page 28
Replace the existing title of subclause 5.13 by the following new title:
5.13 Magnitude of the input reflection coefficient (input return loss) (|S |)
Replace, in Equation (17), the symbol “|s |” by “|S |”.
11 11
Page 29
Replace, the symbol “(|s |)” by “(|S |)” in the following places:
22 22

in both the title and text of subclause 5.14, on page 30 in Equation (18); on page 31, in

Subclause 5.14.2.1 and in Equation (19),
Page 32
5.14.2.4 Circuit description and requirements
Delete, in the second paragraph of this subclause, the symbol “|s |”.
---------------------- Page: 10 ----------------------
60747-16-1 Amend. 1 © IEC:2006(E) – 7 –
5. 1 4 . 2 . 6 M easu r e m e n t p r o c e d u r e
Delete, in the last line of this subclause, the symbol “|s |”.
Replace the existing last line of this subclause by the following:
Page 33

Replace, in the title of Subclause 5.15 and in Equation (20), “(|s |)” by “|S |”

12 12
Page 39
Replace, in the title of Subclause 5.19, “(P /P )” by “(P /P )”.
nth 1 1 nth
Delete, in Subclause 5.19.1, the term “P /P ”.
nth 1
5.19.3 Principle of measurement
Replace, in Subclause 5.19.3, “P /P ” by “P /P ”.
nth 1 1 nth
Replace the existing Equation (29) by the following:
P /P = P – P (29)
1 nth 1 nth
Page 40
5.19.6 Measurement procedure
Delete, in th
...

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