SIST EN IEC 62433-1:2019

EMC IC modelling - Part 1: General modelling framework (IEC 62433-1:2019)

IEC 62433-1:2019(E) specifies the framework and methodology for EMC IC macro-modelling. Terms that are commonly used in IEC 62433 (all parts), different modelling approaches, requirements and data-exchange format for each model category that is standardized in this series are defined in this document.
IEC 62433-1 cancels and replaces IEC TS 62433-1 published in 2011. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to IEC TS 62433 1:2011:
Incorporation of a data exchange format for an integrated circuit’s model representation.

EMV-IC-Modellierung - Teil 1: Allgemeine Modellierungsstruktur

Modèles de circuits intégrés pour la CEM - Partie 1: Cadre de modèle général

L'IEC 62433-1:2019 spécifie le cadre et la méthodologie pour des macromodèles de circuits intégrés pour la CEM (EMC IC). Les termes couramment utilisés dans l'IEC 62433 (toutes les parties), différentes approches pour la modélisation, des exigences et un format d’échange de données pour chaque catégorie de modèle normalisée dans cette série sont définis dans le présent document.
L’IEC 62433-1 annule et remplace l’IEC TS 62433-1 parue en 2011. Cette édition constitue une révision technique.
L'IEC 62433-1 inclut les modifications techniques majeures suivantes par rapport à l'IEC TS 62433-1:2011:
– Introduction d’un format d’échange de données pour la représentation d’un modèle de circuit intégré

Modeliranje integriranih vezij (IC) za elektromagnetno združljivost (EMC) - 1. del: Splošni modelirni okvir (IEC 62433-1:2019)

Ta del standarda IEC 62433 določa okvir in metodologijo za makro modeliranje integriranih vezij (IC) za elektromagnetno združljivost (EMC). V tem dokumentu so opredeljeni izrazi, ki se pogosto uporabljajo v standardu IEC 62433 (vsi deli), različni pristopi z modeliranjem, zahteve in format za izmenjavo podatkov za vsako modelno kategorijo, ki je standardizirana v tej skupini standardov.

General Information

• Status: Published
• Publication Date: 21-May-2019
• ICS: 31.200 - Integrated circuits. Microelectronics
• ICS: 33.100.01 - Electromagnetic compatibility in general
• Technical Committee: I11 - Imaginarni 11
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 10-May-2019
• Due Date: 15-Jul-2019
• Completion Date: 22-May-2019
• Ref Project: EN IEC 62433-1:2019 - EMC IC modelling - Part 1: General modelling framework

Relations

• Corrected By: SIST EN IEC 62433-1:2019/AC:2020 - EMC IC modelling - Part 1: General modelling framework (IEC 62433-1:2019/COR1:2020)
• Effective Date: 03-Aug-2020

Standards Content (Sample)

SLOVENSKI STANDARD
01-julij-2019
Modeliranje integriranih vezij (IC) za elektromagnetno združljivost (EMC) - 1. del:
Splošni modelirni okvir (IEC 62433-1:2019)
EMC IC modelling - Part 1: General modelling framework (IEC 62433-1:2019)
EMV-IC-Modellierung - Teil 1: Allgemeine Modellierungsstruktur
Modèles de circuits intégrés pour la CEM - Partie 1: Cadre de modèle général
Ta slovenski standard je istoveten z: EN IEC 62433-1:2019
ICS:
31.200 Integrirana vezja, Integrated circuits.
mikroelektronika Microelectronics
33.100.01 Elektromagnetna združljivost Electromagnetic compatibility
na splošno in general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD EN IEC 62433-1

NORME EUROPÉENNE
EUROPÄISCHE NORM
April 2019
ICS 31.200
English Version
EMC IC modelling - Part 1: General modelling framework
(IEC 62433-1:2019)
Modèles de circuits intégrés pour la CEM - Partie 1: Cadre EMV-IC-Modellierung - Teil 1: Allgemeine
de modèle général Modellierungsstruktur
(IEC 62433-1:2019) (IEC 62433-1:2019)
This European Standard was approved by CENELEC on 2019-04-12. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden,
Switzerland, Turkey and the United Kingdom.

European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2019 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN IEC 62433-1:2019 E

European foreword
The text of document 47A/1042/CDV, future edition 1 of IEC 62433-1, prepared by SC 47A "Integrated
circuits" of IEC/TC 47 "Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and
approved by CENELEC as EN IEC 62433-1:2019.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2020-01-12
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2022-04-12
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.

Endorsement notice
The text of the International Standard IEC 62433-1:2019 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following note has to be added for the standard indicated:
CISPR 17 NOTE Harmonized as EN 55017

Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any amendments)
applies.
NOTE 1  Where an International Publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
NOTE 2  Up-to-date information on the latest versions of the European Standards listed in this annex is available here:
www.cenelec.eu.
Publication Year Title EN/HD Year
IEC 62433 series EMC IC modelling EN 62433 series
ISO 8879 -  Information processing - Text and office - -
systems - Standard Generalized Markup
Language (SGML)
ANSI INCITS 4 1986 Information Systems - Coded Character - -
Sets - 7-Bit American National Standard
Code for Information Interchange (7-Bit
ASCII)
IEC 62433-1 ®
Edition 1.0 2019-03
INTERNATIONAL
STANDARD
colour
inside
EMC IC modelling –
Part 1: General modelling framework

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.200 ISBN 978-2-8322-6601-4

– 2 – IEC 62433-1:2019 © IEC 2019
CONTENTS
FOREWORD . 5
1 Scope . 7
2 Normative references . 7
3 Terms, definitions, abbreviated terms and conventions . 7
3.1 Terms and definitions . 7
3.2 Abbreviated terms . 10
3.3 Conventions . 11
4 Definition of models . 11
4.1 General . 11
4.2 Conducted emission model . 11
4.3 Radiated emission model . 11
4.4 Conducted immunity model . 12
4.5 Radiated immunity model . 12
4.6 Conducted pulse immunity model . 12
5 Modelling approaches . 12
5.1 General . 12
5.2 Black box modelling approach . 13
5.3 Equivalent circuit modelling approach . 13
5.4 Other modelling approaches . 14
5.4.1 General . 14
5.4.2 Electromagnetic modelling approach . 14
5.4.3 Statistical modelling approach . 14
6 Requirements of model description . 14
7 Model data exchange format . 14
7.1 General . 14
7.2 IC_EMCML structure . 15
7.3 IC_EMCML components . 16
7.3.1 Root element . 16
7.3.2 Global element . 16
7.3.3 Header section . 16
7.3.4 Lead element . 17
7.3.5 Lead_definitions section . 17
7.3.6 Macromodels section . 17
7.3.7 Frequency section . 18
7.3.8 Validity section . 19
7.3.9 Pdn section . 20
7.3.10 Nlb section . 21
7.3.11 Ibc section . 21
7.3.12 Ia section . 21
7.3.13 Ib section . 22
7.3.14 Fb section . 22
7.3.15 Voltage, Current and Power sections . 23
7.3.16 Table section . 23
7.3.17 Coordinate_system section . 24
7.3.18 Reference section . 24
Annex A (normative) Requirements for EMC IC models . 25

IEC 62433-1:2019 © IEC 2019 – 3 –
Annex B (normative)  Preliminary definitions for XML representation . 26
B.1 XML basics . 26
B.1.1 XML declaration . 26
B.1.2 Basic elements . 26
B.1.3 Root element . 26
B.1.4 Comments . 26
B.1.5 Line terminations . 27
B.1.6 Element hierarchy . 27
B.1.7 Element attributes . 27
B.2 Keyword requirements . 27
B.2.1 General . 27
B.2.2 Keyword characters . 27
B.2.3 Keyword syntax . 28
B.2.4 File structure . 28
B.2.5 Values . 30
Annex C (normative) IC_EMCML valid keywords and usage . 32
C.1 Root element keywords . 32
C.2 Global keywords . 33
C.3 File header keywords . 33
C.4 Lead keyword attributes . 35
C.5 Submodel element attributes . 36
C.6 Vector element keywords . 36
C.7 Lead_definitions section attributes . 37
C.7.1 General . 37
C.7.2 Lead element attributes . 38
C.8 Validity section keywords . 38
C.9 Subckt section attributes . 38
C.10 Netlist section keywords . 39
C.11 Pdn and Ibc section keywords . 39
C.11.1 General . 39
C.11.2 Lead element attributes in the Pdn section . 40
C.11.3 Lead element attributes in the Ibc section . 42
C.12 Ia section keywords . 44
C.12.1 General . 44
C.12.2 Lead element attributes . 44
C.12.3 Voltage section keywords . 45
C.12.4 Current section keywords . 46
C.12.5 Pulse element keywords . 48
C.13 Ib section keywords . 50
C.13.1 Lead element keywords . 50
C.13.2 Max_power_level section keywords . 51
C.13.3 Voltage section keywords . 51
C.13.4 Current section keywords . 52
C.13.5 Power section keywords . 53
C.13.6 Test_criteria section keywords . 54
C.14 Nlb section keywords . 55
C.15 Fb section keywords . 56
C.15.1 Lead element keywords . 56
C.15.2 Table element keywords . 57

– 4 – IEC 62433-1:2019 © IEC 2019
C.15.3 Test_characteristics element attributes . 58
Bibliography . 59

Figure B.1 – Multiple XML files . 29
Figure B.2 – XML files with data files (*.dat) . 29
Figure B.3 – XML files with additional files . 30
Figure C.1 – Pulse signal as defined using the Pulse element . 50

Table 1 – Attributes of Lead keyword in the Lead_definitions section . 17
Table 2 – General definition of the Subckt attributes . 18
Table 3 – Definition of the Validity section . 19
Table A.1 − Requirements for model description . 25
Table B.1 – Valid logarithmic units . 31
Table C.1 – Root element keywords . 32
Table C.2 – Global keywords . 33
Table C.3 – Header element keywords . 34
Table C.4 – Lead element keywords . 35
Table C.5 – Submodel element keywords . 36
Table C.6 – Vector element keywords . 37
Table C.7 – Valid elements in the Lead_definitions section . 37
Table C.8 – Attributes of the Lead element in the Lead_definitions section . 38
Table C.9 – Validity element keywords . 38
Table C.10 – Subckt element keywords . 39
Table C.11 – Netlist element keywords . 39
Table C.12 – Pdn element keywords . 40
Table C.13 – Attributes of the Lead element in the Pdn section . 41
Table C.14 – Attributes of the Lead element in the Ibc section . 43
Table C.15 – Valid keywords in the Ia section . 44
Table C.16 – Attributes of the Lead element in the Ia section . 44
Table C.17 – Voltage element keywords . 45
Table C.18 – Current element keywords . 47
Table C.19 – Attributes of the Pulse element . 48
Table C.20 – Lead element keywords in the Ib section . 50
Table C.21 – Max_power_level section keywords . 51
Table C.22 – Voltage section keywords . 52
Table C.23 – Current section keywords . 53
Table C.24 – Power section keywords. 54
Table C.25 – Test_criteria section keywords . 55
Table C.26 – Lead element keywords in the Nlb section . 55
Table C.27 – Lead element keywords in the Fb section . 56
Table C.28 – Table element keywords in the Fb section . 57
Table C.29 – Test_charactetistics element keywords in the Fb section . 58

IEC 62433-1:2019 © IEC 2019 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
EMC IC MODELLING –
Part 1: General modelling framework

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
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with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
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3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
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4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
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between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
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6) All users should ensure that they have the latest edition of this publication.
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members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62433-1 has been prepared by subcommittee 47A: Integrated
circuits, of IEC technical committee 47: Semiconductor devices.
IEC 62433-1 cancels and replaces IEC TS 62433-1 published in 2011. This edition constitutes
a technical revision.
This edition includes the following significant technical changes with respect to
IEC TS 62433 1:2011:
Incorporation of a data exchange format for an integrated circuit’s model representation.

– 6 – IEC 62433-1:2019 © IEC 2019
The text of this International Standard is based on the following documents:
CDV Report on voting
47A/1042/CDV 47A/1055/RVC
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts of the IEC 62433 series, under the general title EMC IC modelling, can be
found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
 reconfirmed,
 withdrawn,
 replaced by a revised edition, or
 amended.

IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct
understanding of its contents. Users should therefore print this document using a
colour printer.

IEC 62433-1:2019 © IEC 2019 – 7 –
EMC IC MODELLING –
Part 1: General modelling framework

1 Scope
This part of IEC 62433 specifies the framework and methodology for EMC IC macro-modelling.
Terms that are commonly used in IEC 62433 (all parts), different modelling approaches,
requirements and data-exchange format for each model category that is standardized in this
series are defined in this document.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their
content constitutes requirements of this document. For dated references, only the edition
cited applies. For undated references, the latest edition of the referenced document (including
any amendments) applies.
IEC 62433 (all parts), EMC IC modelling
ISO 8879, Information processing – Text and office systems – Standard Generalized Markup
Language (SGML)
ANSI INCITS 4:1986, Information Systems – Coded Character Sets – 7-Bit American National
Standard Code for Information Interchange (7-Bit ASCII)
3 Terms, definitions, abbreviated terms and conventions
3.1 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1.1
ICEM-CE
Integrated Circuit Emission Model – Conducted Emissions
macro-model of an integrated circuit (IC) to simulate the conducted electromagnetic emissions
Note 1 to entry: An ICEM-CE macro-model can be used for modelling an IC-die, a functional block and an
Intellectual Property (IP) block.
3.1.2
ICEM-RE
Integrated Circuit Emission Model – Radiated Emissions
macro-model of an integrated circuit (IC) to simulate the radiated electromagnetic emissions

– 8 – IEC 62433-1:2019 © IEC 2019
3.1.3
ICIM-CI
Integrated Circuit Immunity Model – Conducted Immunity
macro-model of an integrated circuit (IC) to simulate the susceptibility levels of the IC to
conducted disturbances applied on the IC pins
3.1.4
ICIM-RI
Integrated Circuit Immunity Model – Radiated Immunity
macro-model of an integrated circuit (IC) to simulate the susceptibility levels of the IC to
external radiated disturbances
3.1.5
ICIM-CPI
Integrated Circuit Immunity Model – Conducted Pulse Immunity
macro-model of an integrated circuit (IC) to simulate the susceptibility levels of the IC to
conducted pulse disturbances applied on the IC pins
3.1.6
IA
Internal Activity
component of an IC model represented by a current or voltage source, which originates in
activity of active devices in an IC or in a portion of the IC
Note 1 to entry: The component is applicable for both analogue and digital circuitry.
3.1.7
IB
Immunity Behaviour
block that describes the internal immunity behaviour of the IC
3.1.8
FB
Failure Behaviour
block that describes the internal failure behaviour of the IC
3.1.9
PDN
Passive Distribution Network
component of an IC model that represents the characteristics of propagation path of
electromagnetic noises such as power distribution network
Note 1 to entry: The propagation path can be represented either as an electrical network or as an equivalent
network of electromagnetic sources such as electric and magnetic dipoles.
3.1.10
NLB
Non-Linear Block
component of the IC model that represents the non-linear characteristics of the propagation
path of the electromagnetic noises such as power distribution network
EXAMPLE ESD diodes, clamping diodes, back-to-back diodes.
3.1.11
IBC
Inter-Block Coupling
network of passive elements that presents a coupling effect between circuit blocks within
an IC
IEC 62433-1:2019 © IEC 2019 – 9 –
3.1.12
DI
Disturbance Input
input terminal for the injection of RF and transient disturbances
Note 1 to entry: It could be any pin of IC, an input, supply or an output.
3.1.13
DO
Disturbance Output
terminal whose load influences the impedance of DI terminal, and/or the transfer
characteristics of PDN, and that outputs a part of the disturbance received on the DI terminals
3.1.14
OO
Observable Output
output terminal where the immunity criteria are monitored during the test
3.1.15
section
XML element placed one level below the root element or within another section and that
contains one or more XML elements, but no value
3.1.16
parent
keyword which is one level above another keyword
3.1.17
child
keyword which is one level below another keyword
3.1.18
parser
tool for syntactic analysis of data that is encoded in a specified format
3.1.19
S-parameter
scattering parameter
S
ij
element of the S-matrix expressing the transmission and reflection coefficients of a device
Note 1 to entry: As most commonly used, each S-parameter relates the complex electric field strength of a
reflected or transmitted wave to that of an incident wave; the subscripts of a typical S-parameter S refer to the
ij
output and input ports related by the S-parameter, which may vary with frequency.
[SOURCE: CISPR 17:2011, 3.1.13, modified – The example has been removed.]
3.1.20
IC_EMCML
Integrated Circuit ElectroMagnetic Compatibility Markup Language
data exchange format for EMC IC model description
3.1.21
CEML
Conducted Emissions Markup Language
data exchange format for conducted emissions macro-model

– 10 – IEC 62433-1:2019 © IEC 2019
3.1.22
REML
Radiated Emissions Markup Language
data exchange format for radiated emissions macro-model
3.1.23
CIML
Conducted Immunity Markup Language
data exchange format for conducted immunity macro-model
3.1.24
RIML
Radiated Immunity Markup Language
data exchange format for radiated immunity emissions macro-model
3.1.25
CPIML
Conducted Pulse Immunity Markup Language
data exchange format for conducted pulse immunity macro-model
3.1.26
CEMLBase
Conducted Emissions Markup Language Base
abstract type from which all CEML model components are directly or indirectly derived in the
conducted emissions macro-model definition
3.1.27
REMLBase
Radiated Emissions Markup Language Base
abstract type from which all REML model components are directly or indirectly derived in the
radiated emissions macro-model definition
3.1.28
CIMLBase
Conducted Immunity Markup Language Base
abstract type from which all CIML model components are directly or indirectly derived in the
conducted immunity macro-model definition
3.1.29
RIMLBase
Radiated Immunity Markup Language Base
abstract type from which all RIML model components are directly or indirectly derived in the
radiated immunity macro-model definition
3.1.30
CPIMLBase
Conducted Pulse Immunity Markup Language Base
abstract type from which all CPIML model components are directly or indirectly derived in the
conducted pulse immunity macro-model definition
3.2 Abbreviated terms
3.2.1
XML
eXtensible Markup Language
markup language that defines a set of rules for encoding data or files in a format that is both
human-readable and machine-readable

IEC 62433-1:2019 © IEC 2019 – 11 –
3.2.2
SPICE
Simulation Program with Integrated Circuit Emphasis
general purpose analogue and mixed signal circuit simulator
3.3 Conventions
For the sake of clarity, but with some exceptions, the writing conventions of XML have been
used within the text and tables. The following print types are used throughout this standard:
– XML keywords are defined in Italics
– The symbol "µ" is used in the text part to define micro = 1e-6. The symbol "u" is used in
the XML parts to define the micro = 1e-6.
4 Definition of models
4.1 General
Different categories of EMC IC models are defined in IEC 62433 (all parts). IC models that are
built in conformity with these guidelines can be applied to simulations for EMC. The models
can be used for EMI (Electromagnetic Interference) and/or EMS (Electromagnetic
Susceptibility) evaluation of electronic systems.
Each model is presented in a separate part of the IEC 62433 series and classified in one of
the following categories (see 4.2 to 4.6 included).
4.2 Conducted emission model
A conducted emission (CE) model is a macro-model which describes an Integrated Circuit (IC)
or multiple dies in a package or module (System in Package, SiP) as a source of conducted
RF disturbances.
A CE model shall be described as a multi-terminal or a multi-port circuit which can be linear or
nonlinear. Each CE model consists of internal activities (IAs) as noise sources and passive
distribution networks (PDNs) which express characteristics of internal circuits in the form of a
black box and/or an equivalent circuit. The model can also include sub-models of inter-block
coupling (IBC).
The model describes RF disturbances at external terminals of an IC as voltage and/or current
which are generated by its internal operations.
The model is described in CEML format.
4.3 Radiated emission model
A radiated emission (RE) model is a macro-model which describes radiated RF disturbances
generated by an integrated circuit (IC) or multiple dies in a package or module (System in
Package, SiP).
A RE model shall be described as equivalent sources of electric or magnetic fields, which
cause near-field coupling or far-field radiation, or an equivalent circuit which express electric
or magnetic coupling between the IC or dies and external circuits or enclosures. Each RE
model consists of internal activities (IAs) as noise sources and passive distribution network
(PDNs) that define the radiating elements (as equivalent antennas) of the internal circuits in
the form of a black box.
The model is described in REML format.

– 12 – IEC 62433-1:2019 © IEC 2019
4.4 Conducted immunity model
A conducted immunity (CI) model is a macro-model which describes an Integrated Circuit (IC)
or multiple dies in a package or module (System in Package, SiP) as a victim of conducted RF
disturbances applied from outside.
A CI model shall be described as a multi-terminal or a multi-port circuit in a form of a black
box and/or an equivalent circuit which can be linear or nonlinear. Each CI model consists of
immunity behavior (IBs) blocks that define the susceptibility of the IC and passive distribution
networks (PDNs) that define the characteristics of the noise propagation path. The model can
also include sub-models of inter-block coupling (IBC).
A CI model provides measures or criteria of malfunctions caused by RF disturbances injected
at external terminals as voltage, current, or RF power.
The model is described in CIML format.
4.5 Radiated immunity model
A radiated immunity (RI) model is a macro-model which describes an Integrated Circuit (IC) or
multiple dies in a package or module (System in Package, SiP) as a victim of radiated RF
disturbances from outside.
An RI model provides measures or criteria of malfunctions caused by RF disturbances applied
as electric or magnetic fields in near-field or electromagnetic field.
An RI model is described as equivalent circuits which can express electric or magnetic
coupling between the IC or dies and external circuits or enclosures caused due to external
field coupling. A description of the different components of the model will be elaborated in the
future.
The model is described in RIML format.
4.6 Conducted pulse immunity model
A conducted pulse immunity (CPI) model is a macro-model which describes an Integrated
Circuit (IC) or multiple dies in a package or module (System in Package, SiP) as a victim of
conducted pulse or transient disturbances from outside.
A CPI model provides measures or criteria of malfunctions caused by pulse or transient
disturbances applied on IC pins. Each CPI model consists of failure behavior (FBs) blocks
that define the susceptibility of the IC and pulse propagation networks (PPNs) that define the
characteristics of the noise propagation path. The PPNs consist of the linear passive
distribution networks (PDNs) and the non-linear blocks (NLBs). The model can also include
sub-models of inter-block coupling (IBC).
The model is described in CPIML format.
5 Modelling approaches
5.1 General
Description of an EMC IC model, such as equivalent circuit parameters, can be derived from
design data of the device, or extracted from data obtained by measurement. Each of the
models shall contain information of an internal integrated circuit (IC) or multiple dies as well
as that of a package.
IEC 62433-1:2019 © IEC 2019 – 13 –
A conducted emission (CE) or conducted immunity (CI) or conducted pulse immunity (CPI)
model can be expressed in either a form of a black box model, or an equivalent circuit model.
A model shall be expressed with a circuit concept including terminals and/or nodes.
A radiated emission (RE) or radiated immunity (RI) model can be expressed with either an
electromagnetic model or an equivalent circuit model. An electromagnetic RE model
expresses near field or far field which causes electromagnetic interference (EMI). An
electromagnetic RI model expresses electromagnetic coupling induced in the device. An
equivalent circuit model for RE/RI describes electric or magnetic coupling with capacitive or
inductive circuit elements. The equivalent circuit model for RE/RI can include a black box
model as a sub-model.
Clauses 5.2 to 5.4 describe modelling approaches for each possible expression of a model.
Some of the expressions can be combined and used in one model.
5.2 Black box modelling approach
The expression of a black box model is essentially an N-port circuit, whose characteristics are
expressed in a matrix form or with some circuit equations. When a black box model is used to
express a CE or RE model, some voltage and/or current sources are connected to the black
box as noise sources to express the internal activity (IA). The following expressions are
possible for black box models.
For a linear circuit, or a circuit which can be approximated as linear, the following parameters
can be used; these parameters are expressed as functions of frequency, and time-variant or
non-linear elements are not considered.
• impedance (Z) parameter;
• admittance (Y) parameter;
• fundamental (F) parameter;
• scattering (S) parameter.
Elements of a matrix can be expressed with formulas with some parameters, or tables which
express frequency characteristics of the circuit.
In the definition of a model, internal terminals/ports and external terminals/ports shall be
distinguished and defined clearly in the matrix expression.
Characteristics of a distributed constant circuit, such as transmission lines, can be expressed
with a scattering (S) matrix as a multi-port circuit. For these circuits, definition of ports and
their locations shall be described with port impedance for each. Particularly when a
differential port is used, it is desirable to define a common-mode port as a counterpart of a
differential signal port.
5.3 Equivalent circuit modelling approach
Equivalent circuit models, both lumped element circuits and distributed constant circuits, can
be used to express electrical characteristics of CE/CI and RE/RI models. In the circuit
expression, non-linear circuits can be included as well as linear circuits.
A linear circuit which is described with a black box model, or a matrix model, may be
converted to an equivalent circuit model. Particularly when a model is constructed by
measurement, characteristics of the circuit are first expressed in a matrix form, and then
converted to an equivalent circuit.
Some of non-linear characteristics of a device can be obtained by measurement and can be
included in an equivalent circuit model. Additionally, model simplification is possible using a
complex circuit model and generating information of the circuit by simulation.

– 14 – IEC 62433-1:2019 © IEC 2019
In the description of a model which can be determined by measurement or simulation, the
method of model parameter extraction shall be described in each part of IEC 62433 (all parts).
An equivalent circuit model of a particular device shall contain all the information of the circuit
structure, values of circuit parameters, and its applicable conditions.
5.4 Other modelling approaches
5.4.1 General
Other modelling approaches are possible to obtain an EMC IC macro-model. Possible
approaches are described in 5.4.2 and 5.4.3.
5.4.2 Electromagnetic modelling approach
Distribution of so
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