SIST EN IEC 62276:2025
(Main)Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (IEC 62276:2025)
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (IEC 62276:2025)
IEC 62276:2025 applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filters and resonators.
This edition includes the following significant technical changes with respect to the previous edition:
a) The terms and definitions, the technical requirements, sampling frequency, test methods and measurement of transmittance, lightness, colour difference for LN and LT have been added in order to meet the needs of industry development;
b) The term “inclusion” (mentioned in 4.13 and 6.10) and its definition have been added because there was no definition for it in Clause 3;
c) The specification of LTV and PLTV, and the corresponding description of sampling frequency for LN and LT have been added, because they are the key performance parameters for the wafers;
d) The tolerance of Curie temperature specification for LN and LT have been added in order to meet the development requirements of the industry;
e) Measurement of thickness, TV5, TTV, LTV and PLTV have been completed, including measurement principle and method of thickness, TV5, TTV, LTV and PLTV.
Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und Messverfahren (IEC 62276:2025)
Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques de surface (OAS) - Spécifications et méthodes de mesure (IEC 62276:2025)
L'IEC 62276:2025 s’applique à la fabrication de tranches monocristallines de quartz synthétique, de niobate de lithium (LN), de tantalate de lithium (LT), de tétraborate de lithium (LBO) et de silicate de gallium et de lanthane (LGS), destinées à être utilisées comme substrats dans la fabrication de résonateurs et de filtres à ondes acoustiques de surface (OAS).
Cette édition inclut les modifications techniques majeures suivantes par rapport à l’édition précédente:
a) les termes et définitions, les exigences techniques, la fréquence d’échantillonnage, les méthodes d'essai et la mesure de la transmission, de la clarté et de la différence de couleur pour le LN et le LT ont été ajoutés, afin de satisfaire aux besoins de développement industriel;
b) le terme « inclusion » mentionné en 4.13 et 6.10 et sa définition ont été ajoutés à l'Article 3, dans la mesure où ils n'était pas suffisamment défini;
c) la spécification de la LTV et du PLTV, et la description correspondante de la fréquence d'échantillonnage pour le LN et le LT ont été ajoutées, dans la mesure où elles correspondent aux paramètres de performances clés pour les tranches;
d) la tolérance de la spécification relative à la température de Curie pour le LN et le LT a été ajoutée afin de satisfaire aux exigences de développement de l'industrie;
e) la mesure de l'épaisseur, de la TV5, de la TTV, de la LTV et du PLTV a été réalisée, y compris le principe et la méthode de mesure de l'épaisseur, de la TV5, de la TTV, de la LTV et du PLTV.
Monokristalne rezine za površinske zvočnovalovne naprave (SAW) - Specifikacije in merilne metode (IEC 62276:2025)
General Information
Relations
Standards Content (Sample)
SLOVENSKI STANDARD
01-junij-2025
Nadomešča:
SIST EN 62276:2017
Monokristalne rezine za površinske zvočnovalovne naprave (SAW) - Specifikacije
in merilne metode (IEC 62276:2025)
Single crystal wafers for surface acoustic wave (SAW) device applications -
Specifications and measuring methods (IEC 62276:2025)
Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und
Messverfahren (IEC 62276:2025)
Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques
de surface (OAS) - Spécifications et méthodes de mesure (IEC 62276:2025)
Ta slovenski standard je istoveten z: EN IEC 62276:2025
ICS:
31.140 Piezoelektrične naprave Piezoelectric devices
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
EUROPEAN STANDARD EN IEC 62276
NORME EUROPÉENNE
EUROPÄISCHE NORM April 2025
ICS 31.140 Supersedes EN 62276:2016
English Version
Single crystal wafers for surface acoustic wave (SAW) device
applications - Specifications and measuring methods
(IEC 62276:2025)
Tranches monocristallines pour applications utilisant des Einkristall-Wafer für Oberflächenwellen-(OFW-
dispositifs à ondes acoustiques de surface (OAS) - )Bauelemente - Festlegungen und Messverfahren
Spécifications et méthodes de mesure (IEC 62276:2025)
(IEC 62276:2025)
This European Standard was approved by CENELEC on 2025-04-11. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the
Netherlands, Norway, Poland, Portugal, Republic of North Macedonia, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Türkiye and the United Kingdom.
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2025 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN IEC 62276:2025 E
European foreword
The text of document 49/1454/CDV, future edition 4 of IEC 62276, prepared by TC 49 "Piezoelectric,
dielectric and electrostatic devices and associated materials for frequency control, selection and
detection" was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2026-04-30
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2028-04-30
document have to be withdrawn
This document supersedes EN 62276:2016 and all of its amendments and corrigenda (if any).
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Any feedback and questions on this document should be directed to the users’ national committee. A
complete listing of these bodies can be found on the CENELEC website.
Endorsement notice
The text of the International Standard IEC 62276:2025 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standard indicated:
IEC 60862-1 NOTE Approved as EN 60862-1
IEC 60862-2 NOTE Approved as EN 60862-2
IEC 60862-3 NOTE Approved as EN 60862-3
IEC 61019-1 NOTE Approved as EN 61019-1
IEC 61019-2 NOTE Approved as EN 61019-2
ISO 21920-2 NOTE Approved as EN ISO 21920-2
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any amendments)
applies.
NOTE 1 Where an International Publication has been modified by common modifications, indicated by (mod),
the relevant EN/HD applies.
NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available
here: www.cencenelec.eu.
Publication Year Title EN/HD Year
IEC 60758 2016 Synthetic quartz crystal - Specifications and EN 60758 2016
guidelines for use
IEC 62276 ®
Edition 4.0 2025-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Single crystal wafers for surface acoustic wave (SAW) device applications –
Specifications and measuring methods
Tranches monocristallines pour applications utilisant des dispositifs à ondes
acoustiques de surface (OAS) – Spécifications et méthodes de mesure
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.140 ISBN 978-2-8327-0246-8
– 2 – IEC 62276:2025 © IEC 2025
CONTENTS
FOREWORD . 5
1 Scope . 7
2 Normative references. 7
3 Terms and definitions . 7
3.1 Flatness . 7
3.2 Appearance defects . 11
3.3 Other terms and definitions . 11
3.4 Terms and definitions related to LN and LT wafers . 12
4 Requirements . 13
4.1 General . 13
4.2 Diameters and tolerances . 13
4.3 Thickness and tolerance . 14
4.4 Orientation flat . 14
4.5 Secondary flat . 14
4.6 Front (propagation) surface roughness . 14
4.7 Back surface roughness . 14
4.8 Warp . 14
4.9 TV5 and TTV . 14
4.10 LTV and PLTV . 15
4.11 Front surface defects . 16
4.12 Tolerance of surface orientation . 16
4.13 Inclusions . 16
4.14 Position of seed in synthetic quartz wafer . 16
4.15 Electrical twins in synthetic quartz wafer . 16
4.16 Bevel . 16
4.17 Bulk resistivity (conductivity) for reduced LN and reduced LT . 16
4.18 Transmittance . 16
4.19 Lightness . 17
4.20 Colour difference . 17
5 Sampling plan . 17
5.1 General . 17
5.2 Sampling. 17
6 Test methods . 18
6.1 Diameter . 18
6.2 Thickness . 18
6.3 Existence and position of OF and SF . 18
6.4 Dimensions of OF and SF . 18
6.5 Orientation of OF and SF . 18
6.6 TV5 . 18
6.7 Warp . 18
6.8 TTV, LTV and PLTV . 18
6.9 Front surface defects . 18
6.10 Inclusions . 18
6.11 Position of seed in synthetic quartz wafer . 18
6.12 Electrical twins in synthetic quartz wafer . 19
6.13 Bevel . 19
IEC 62276:2025 © IEC 2025 – 3 –
6.14 Front surface and back surface roughness . 19
6.15 Orientation . 19
6.16 Bulk resistivity . 19
6.17 Transmittance . 19
6.18 Lightness . 19
6.19 Colour difference . 19
7 Identification, labelling, packaging, delivery condition . 19
7.1 Packaging . 19
7.2 Labelling and identification . 20
7.3 Delivery condition . 20
8 Measurements of orientation by X-ray . 20
8.1 Measurement principle . 20
8.2 Measurement method . 21
8.3 Measuring surface orientation . 21
8.4 Measuring OF flat orientation . 21
8.5 Typical wafer orientations and reference planes . 21
9 Measurement of bulk resistivity . 22
9.1 Resistance measurement . 22
9.2 Electrode .
...
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