SIST EN 62047-6:2010

Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (IEC 62047-6:2009)

This International Standard specifies the method for axial tensile-tensile force fatigue testing of thin film materials with a length and width under 1 mm and a thickness in the range between 0,1 μm and 10 μm under constant force range or constant displacement range. Thin films are used as main structural materials for MEMS and micromachines. The main structural materials for MEMS, micromachines, etc., have special features, such as typical dimensions of a few microns, material fabrication by deposition, and test piece fabrication by means of non-mechanical machining, including photolithography. This International Standard specifies the axial force fatigue testing methods for micro-sized smooth specimens, which enables a guarantee of accuracy corresponding to the special features. The tests are carried out at room temperatures, in air, with loading applied to the test piece along the longitudinal axis.

Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 6: Prüfverfahren zur uniaxialen Dauerschwingfestigkeit von Dünnschicht-Werkstoffen (IEC 62047-6:2009)

Dispositifs à semiconducteurs - Dispositifs micro-électromécaniques - Partie 6: Méthodes d'essais de fatigue axiale des matériaux en couche (CEI 62047-6:2009)

La CEI 62047-6:2009 spécifie la méthode relative à l'essai de fatigue pour une force axiale de traction-traction des matériaux en couche mince de longueur et largeur inférieures à 1 mm et d'une épaisseur comprise entre 0,1 µm et 10 µm dans le cadre d'une gamme de force constante ou d'une gamme de déplacement constant. Les couches minces sont utilisées comme matériaux de construction principaux pour les systèmes micro-électromécaniques (MEMS, Micro-Electromechanical Systems) et les micromachines. Les matériaux de construction principaux pour les MEMS, les micromachines, etc. comportent des caractéristiques spéciales telles que des dimensions typiques de l'ordre de quelques microns, une fabrication de matériau par dépôt, et une fabrication d'éprouvettes d'essai au moyen d'un usinage non mécanique, qui peut être la photolithographie. La présente Norme internationale spécifie les méthodes d'essais de fatigue pour force axiale pour des éprouvettes lisses microminiaturisées, qui garantissent une précision correspondant aux caractéristiques spéciales. Les essais sont effectués à températures ambiantes, à l'air, en appliquant la charge à l'éprouvette le long de l'axe longitudinal.

Polprevodniški elementi - Mikroelektromehanski elementi - 6. del: Metode za preskušanje osne utrujenosti tankoplastnih materialov (IEC 62047-6:2009)

Ta mednarodni standard določa metodo za preskušanje osne utrujenosti tankoplastnih materialov dolžine in širine pod 1 mm in debeline med 0,1 μm in 10 μm pod silo ali spodrivom v nespremenljivem razponu. Tanki filmi se uporabljajo kot glavni strukturni materiali za MEMS in mikrostroje. Glavni strukturni materiali za MEMS, mikrostroje, itd. imajo posebne lastnosti, kot so značilna velikost nekaj mikronov, izdelava materiala z usedanjem in preskušanci, narejeni s pomočjo nemehanske strojne obdelave, vključno s fotolitografijo. Ta mednarodni standard določa metode za preskušanje osne utrujenosti gladkih preskušancev mikro velikosti, kar zagotavlja natančnost, ki ustreza posebnim lastnostim. Preskusi se opravljajo pri sobni temperaturi, v zraku, z obremenitvijo preskušanca po vzdolžni osi.

General Information

• Status: Published
• Publication Date: 07-Apr-2010
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: I11 - Imaginarni 11
• Current Stage: 6060 - National Implementation/Publication (Adopted Project)
• Start Date: 16-Mar-2010
• Due Date: 21-May-2010
• Completion Date: 08-Apr-2010
• Ref Project: EN 62047-6:2010 - Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials

Standards Content (Sample)

SLOVENSKI STANDARD
SIST EN 62047-6:2010
01-maj-2010
Polprevodniški elementi - Mikroelektromehanski elementi - 6. del: Metode za
preskušanje osne utrujenosti tankoplastnih materialov (IEC 62047-6:2009)
Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing
methods of thin film materials (IEC 62047-6:2009)
Halbleiterbauelemente - Bauelemente der Mikrosystemtechnik - Teil 6: Prüfverfahren zur
uniaxialen Dauerschwingfestigkeit von Dünnschicht-Werkstoffen (IEC 62047-6:2009)
Dispositifs à semiconducteurs - Dispositifs micro-électromécaniques - Partie 6: Méthodes
d'essais de fatigue axiale des matériaux en couche (CEI 62047-6:2009)
Ta slovenski standard je istoveten z: EN 62047-6:2010
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
SIST EN 62047-6:2010 en,fr
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN 62047-6:2010

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SIST EN 62047-6:2010

EUROPEAN STANDARD
EN 62047-6

NORME EUROPÉENNE
March 2010
EUROPÄISCHE NORM

ICS 31.080.99


English version


Semiconductor devices -
Micro-electromechanical devices -
Part 6: Axial fatigue testing methods of thin film materials
(IEC 62047-6:2009)


Dispositifs à semiconducteurs -  Halbleiterbauelemente -
Dispositifs microélectromécaniques - Bauelemente der Mikrosystemtechnik -
Partie 6: Méthodes d'essais de fatigue Teil 6: Prüfverfahren zur uniaxialen
axiale des matériaux en couche mince Dauerschwingfestigkeit von Dünnschicht-
(CEI 62047-6:2009) Werkstoffen
(IEC 62047-6:2009)




This European Standard was approved by CENELEC on 2010-03-01. CENELEC members are bound to comply
with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard
the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and notified
to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus,
the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy,
Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia,
Spain, Sweden, Switzerland and the United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Central Secretariat: Avenue Marnix 17, B - 1000 Brussels


© 2010 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 62047-6:2010 E

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SIST EN 62047-6:2010
EN 62047-6:2010 - 2 -
Foreword
The text of document 47F/15/FDIS, future edition 1 of IEC 62047-6, prepared by SC 47F, Micro-
electromechanical systems, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC
parallel vote and was approved by CENELEC as EN 62047-6 on 2010-03-01.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent
rights.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
(dop) 2010-12-01
national standard or by endorsement
– latest date by which the national standards conflicting
(dow) 2013-03-01
with the EN have to be withdrawn
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 62047-6:2009 was approved by CENELEC as a European
Standard without any modification.
__________

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SIST EN 62047-6:2010
- 3 - EN 62047-6:2010
Annex ZA
(normative)

Normative references to international publications
with their corresponding European publications

The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.

NOTE  When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD
applies.

Publication Year Title EN/HD Year

IEC 62047-2 2006 Semiconductor devices - Micro- EN 62047-2 2006
electromechanical devices -
Part 2: Tensile testing methods of thin film
materials

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SIST EN 62047-6:2010

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SIST EN 62047-6:2010
IEC 62047-6
®
Edition 1.0 2009-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE


Semiconductor devices – Micro-electromechanical devices –
Part 6: Axial fatigue testing methods of thin film materials

Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 6: Méthodes d’essais de fatigue axiale des matériaux en couche mince

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
P
CODE PRIX
ICS 31.080.99 ISBN 2-8318-1035-8
® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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SIST EN 62047-6:2010
– 2 – 62047-6 © IEC:2009
CONTENTS
FOREWORD.3
1 Scope.5
2 Normative references .5
3 Terms and definitions .5
4 Test piece .7
4.1 Design of test piece.7
4.2 Preparation of test piece .7
4.3 Test piece thickness.7
4.4 Storage prior to testing.7
5 Testing method and test apparatus.7
5.1 General .7
5.2 Method of gripping (mounting of test piece).8
5.3 Static loading test.8
5.4 Method of loading.8
5.5 Speed of testing .8
5.6 Environment control .8
6 Endurances (test termination).9
7 Test report.9
Annex A (informative) Technical background of this standard .10
Annex B (informative) Test piece .11
Annex C (informative) Displacement measurement .12
Annex D (informative) Testing environment.13
Annex E (informative) Number of test pieces .14
Bibliography.15

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SIST EN 62047-6:2010
62047-6 © IEC:2009 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 6: Axial fatigue testing methods of thin film materials


FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with an IEC Publication.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62047-6 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47F/15/FDIS 47F/17/RVD

Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all the parts in the IEC 62047 series, under the general title Semiconductor devices –
Micro-electromechanical devices, can be found on the IEC website.

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SIST EN 62047-6:2010
– 4 – 62047-6 © IEC:2009
The committee has decided that the contents of this publication will remain unchanged until
the maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in
the data related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.

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SIST EN 62047-6:2010
62047-6 © IEC:2009 – 5 –
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 6: Axial fatigue testing methods of thin film materials

1 Scope
This International Standard specifies the method for axial tensile–tensile force fatigue testing
of thin film materials with a length and width under 1 mm and a thickness in the range
between 0,1 μm and 10 μm under constant force range or constant displacement range. Thin
films are used as main structural materials for MEMS and micromachines.
The main structural materials for MEMS, micromachines, etc., have special features, such as
typical dimensions of a few microns, material fabrication by deposition, and test piece
fabrication by means of non-mechanical machining, including photolithography. This
International Standard specifies the axial force fatigue testing methods for micro-sized smooth
specimens, which enables a guarantee of accuracy corresponding to the special features. The
tests are carried out at room temperatures, in air, with loading applied to the test piece along
the longitudinal axis.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 62047-2:2006, Semiconductor devices – Micro-electromechanical devices – Part 2:
Tensile testing method of thin film materials
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
3.1
maximum force
P
max
highest algebraic value of applied force in a cycle
1
NOTE Adapted from ASTM E 1823-05a [1] .
3.2
minimum force
P
min
lowest algebraic value of applied force in a cycle
NOTE Adapted from ASTM E 1823-05a [1].
3.3
mean force
P
mean
algebraic average of the maximum and minimum forces in constant amplitude loading, or of
individual cycles
NOTE Adapted from ASTM E 1823-05a [1].
—————————
1
 The figures between brackets refer to the Bibliography.

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SIST EN 62047-6:2010
– 6 – 62047-6 © IEC:2009
3.4
force range
ΔP
algebraic difference between the maximum and minimum forces in constant amplitude loading
3.5
maximum stress
σ
max
highest algebraic value of applied stress in a cycle
3.6
minimum stress
σ
min
lowest algebraic value of applied force in a cycle
3.7
mean stress
σ
mean
algebraic average of the maximum and minimum stress in constant amplitude loading, or of
individual cycles
3.8
stress range
Δσ
algebraic difference between the maximum and minimum stresses in constant amplitude
loading
3.9
maximum displacement
δ
max
highest algebraic value of applied displacement in a cycle
3.10
minimum displacement
δ
min
lowest algebraic value of applied displacement in a cycle
3.11
mean displacement
δ
mean
algebraic average of the maximum and
...