SIST EN 60749-28:2017
(Main)Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level (IEC 60749-28:2017)
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level (IEC 60749-28:2017)
This part of IEC 60749 establishes the procedure for testing, evaluating, and classifying
devices and microcircuits according to their susceptibility (sensitivity) to damage or
degradation by exposure to a defined field-induced charged device model (CDM) electrostatic
discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic
wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip
modules (MCMs) containing any of these devices are to be evaluated according to this
document. To perform the tests, the devices are assembled into a package similar to that
expected in the final application. This CDM document does not apply to socketed discharge
model testers. This document describes the field-induced (FI) method. An alternative, the
direct contact (DC) method, is described in Annex I.
The purpose of this document is to establish a test method that will replicate CDM failures
and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of
device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD
sensitivity levels.
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 28: Prüfung der Empfindlichkeit gegen elektrostatische Entladungen (ESD) - Charged Device Model (CDM) - Device Level
Dispositifs à semiconducteurs - Méthodes d'essai mécaniques et climatiques - Partie 28: Essai de sensibilité aux décharges électrostatiques (DES) - Modèle de dispositif chargé par contact direct (DC-CDM)
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 28. del: Preskušanje občutljivosti na elektrostatično razelektritev (ESD) - Model z elektrostatično nabitim elementom (CDM) - Raven elementa (IEC 60749-28:2017)
Ta del standarda IEC 60749 določa standardni postopek za preskušanje, ocenjevanje in razvrščanje naprav ter mikrovezij glede na občutljivost na poškodbe in degradacijo, ki so posledica izpostavljenosti določenim induciranim elektrostatičnim razelektritvam (ESD) modelov z elektrostatično nabitim elementom (CMD). Vse pakirane polprevodniške naprave, tankoplastne filme, površinske zvočnovalovne naprave (SAW), optoelektronske naprave, hibridna integrirana vezja (HIC) in veččipne module (MCM), ki vsebujejo katero koli od teh naprav, je treba oceniti v skladu s tem dokumentom. Za izvajanje preskusov so naprave sestavljene v paket, podoben tistemu, ki se pričakuje pri končni uporabi. Ta dokument za model z elektrostatično nabitim elementom se ne uporablja za preskusne naprave za razelektritvene modele z vtičnico. Ta dokument opisuje metodo z induciranim poljem. Alternativna metoda, tj. metoda z neposrednim stikom, je opisana v dodatku I.
Namen tega dokumenta je določiti preskusno metodo, ki bo ponovila napake modela z elektrostatično nabitim elementom (CMD) ter zagotovila zanesljive in ponovljive preskusne rezultate elektrostatične izpraznitve modela z elektrostatično nabitim elementom pri vseh preskusnih napravah ne glede na vrsto naprave. Ponovljivi podatki bodo omogočili natančne opredelitve in primerjave ravni občutljivosti na elektrostatične izpraznitve modela z elektrostatično nabitim elementom.
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Standards Content (Sample)
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level (IEC 60749-28:2017)31.080.01Polprevodniški elementi (naprave) na splošnoSemiconductor devices in generalICS:Ta slovenski standard je istoveten z:EN 60749-28:2017SIST EN 60749-28:2017en01-oktober-2017SIST EN 60749-28:2017SLOVENSKI
STANDARD
SIST EN 60749-28:2017
EUROPEAN STANDARD NORME EUROPÉENNE EUROPÄISCHE NORM
EN 60749-28
June 2017 ICS 31.080.01
English Version
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level (IEC 60749-28:2017)
Dispositifs à semiconducteurs - Méthodes d'essai mécaniques et climatiques - Partie 28: Essai de sensibilité aux décharges électrostatiques (DES) - Modèle de dispositif chargé par contact direct (DC-CDM) (IEC 60749-28:2017)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 28: Prüfung der Empfindlichkeit gegen elektrostatische Entladungen (ESD) - Charged Device Model (CDM) - Device Level (IEC 60749-28:2017) This European Standard was approved by CENELEC on 2017-05-02. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique Europäisches Komitee für Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17,
B-1000 Brussels © 2017 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN 60749-28:2017 E SIST EN 60749-28:2017
EN 60749-28:2017 2 European foreword The text of document 47/2362/FDIS, future edition 1 of IEC 60749-28, prepared by IEC/TC 47 "Semiconductor devices" in collaboration with IEC/TC 101 "Electrostatics" was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 60749-28:2017.
The following dates are fixed: • latest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2018-02-02
• latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2020-05-02
Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Endorsement notice The text of the International Standard IEC 60749-28:2017 was approved by CENELEC as a European Standard without any modification. In the official version, for Bibliography, the following note has to be added for the standard indicated:
IEC 60749-26 NOTE Harmonized as EN 60749-26. SIST EN 60749-28:2017
IEC 60749-28 Edition 1.0 2017-03 INTERNATIONAL STANDARD
Semiconductor devices – Mechanical and climatic test methods –
Part 28: Electrostatic discharge (ESD) sensitivity testing – Charged device
model (CDM) – device level
INTERNATIONAL ELECTROTECHNICAL COMMISSION
ICS 31.080.01
ISBN 978-2-8322-4139-4
® Registered trademark of the International Electrotechnical Commission ®
Warning! Make sure that you obtained this publication from an authorized distributor. SIST EN 60749-28:2017 colourinside
– 2 – IEC 60749-28:2017 © IEC 2017 CONTENTS FOREWORD . 5 INTRODUCTION . 7 1 Scope . 8 2 Normative references . 8 3 Terms and definitions . 8 4 Required equipment . 9 4.1 CDM ESD tester . 9 4.1.1 General . 9 4.1.2 Current-sensing element . 10 4.1.3 Ground plane . 10 4.1.4 Field plate/field plate dielectric layer . 10 4.1.5 Charging resistor . 11 4.2 Waveform measurement equipment . 11 4.2.1 General . 11 4.2.2 Cable assemblies . 11 4.2.3 Equipment for high-bandwidth waveform measurement . 11 4.2.4 Equipment for 1,0 GHz waveform measurement . 11 4.3 Verification modules (metal discs) . 11 4.4 Capacitance meter . 11 4.5 Ohmmeter . 12 5 Periodic tester qualification, waveform records, and waveform verification requirements . 12 5.1 Overview of required CDM tester evaluations . 12 5.2 Waveform capture hardware . 12 5.3 Waveform capture setup . 12 5.4 Waveform capture procedure . 12 5.5 CDM tester qualification/requalification procedure . 13 5.5.1 CDM tester qualification/requalification procedure . 13 5.5.2 Conditions requiring CDM tester qualification/requalification . 13 5.5.3 1 GHz oscilloscope correlation with high bandwidth oscilloscope . 14 5.6 CDM tester quarterly and routine waveform verification procedure . 14 5.6.1 Quarterly waveform verification procedure . 14 5.6.2 Routine waveform verification procedure . 14 5.7 Waveform characteristics . 14 5.8 Documentation . 16 5.9 Procedure for evaluating full CDM tester charging of a device . 16 6 CDM ESD testing requirements and procedures . 17 6.1 Device handling . 17 6.2 Test requirements . 17 6.2.1 Test temperature and humidity . 17 6.2.2 Device test . 17 6.3 Test procedures . 17 6.4 CDM test recording / reporting guidelines . 18 7 CDM classification criteria . 18 Annex A (normative)
Verification module (metal disc) specifications and cleaning guidelines for verification modules and testers . 19 SIST EN 60749-28:2017
IEC 60749-28:2017 © IEC 2017 – 3 –
A.1 Tester verification modules and field plate dielectric . 19 A.2 Care of verification modules . 19 Annex B (normative)
Capacitance measurement of verification modules (metal discs) sitting on a tester field plate dielectric . 20 Annex C (informative)
CDM test hardware and metrology improvements . 21 Annex D (informative)
CDM tester electrical schematic . 23 Annex E (informative)
Sample oscilloscope setup and waveform . 24 E.1 General . 24 E.2 Settings for the 1 GHz bandwidth oscilloscope . 24 E.3 Settings for the high-bandwidth oscilloscope . 24 E.4 Setup . 24 E.5 Sample waveforms from a 1 GHz oscilloscope . 24 E.6 Sample waveforms from an 8 GHz oscilloscope . 25 Annex F (informative)
Field-induced CDM tester discharge procedures . 27 F.1 General . 27 F.2 Single discharge procedure . 27 F.3 Dual discharge procedure . 27 Annex G (informative)
Waveform verification procedures . 29 G.1 Factor/offset adjustment method . 29 G.2 Software voltage adjustment method. 32 G.3 Example parameter recording tables . 34 Annex H (informative)
Determining the appropriate charge delay
for full charging of a large module or device . 36 H.1 General . 36 H.2 Procedure for charge delay determination . 36 Annex I (informative)
Electrostatic discharge (ESD) sensitivity testing direct contact charged device model (DC-CDM) . 38 I.1 General . 38 I.2 Standard test module . 38 I.3 Test equipment (CDM simulator) . 38 I.3.1 Test equipment design. 38 I.3.2 DUT (device under test) support . 38 I.3.3 Metal bar/board . 39 I.3.4 Equipment setup . 39 I.4 Verification of test equipment . 39 I.4.1 General description of verification test equipment . 39 I.4.2 Instruments for measurement . 41 I.4.3 Verification of test equipment, using a current probe . 41 I.5 Test procedure . 42 I.5.1 Initial measurement . 42 I.5.2 Tests . 42 I.5.3 Intermediate and final measurement . 43 I.6 Failure criteria . 43 I.7 Classification criteria . 43 I.8 Summary . 43 Bibliography . 44
Figure 1 – Simplified CDM tester hardware schematic . 10 SIST EN 60749-28:2017
– 4 – IEC 60749-28:2017 © IEC 2017 Figure 2 – CDM characteristic waveform and parameters . 16 Figure D.1 – Simplified CDM tester electrical schematic . 23 Figure E.1 – 1 GHz TC 500, small verification module . 25 Figure E.2 – 1 GHz TC 500, large verification module . 25 Figure E.3 – 8 GHz TC 500, small verification module
(oscilloscope adjusts for attenuation) . 26 Figure E.4 – GHz TC 500, large verification module (oscilloscope adjusts for attenuation) . 26 Figure F.1 – Single discharge procedure
(field charging, ICDM Pulse, and slow discharge) . 27 Figure F.2 – Dual discharge procedure
(field charging, 1st ICDM pulse, no field, 2nd ICDM pulse) . 28 Figure G.1 – An example of a waveform verification flow for qualification and quarterly checks using the factor/offset adjustment method . 30 Figure G.2 – An example of a waveform verification flow for the routine checks using the factor/offset adjustment method . 31 Figure G.3 – Example of average Ipeak for the large verification module –
high bandwidth oscilloscope . 32 Figure G.4 – An example of a waveform verification flow for qualification
and quarterly checks using the software voltage adjustment method . 33 Figure G.5 – An example of a waveform verification flow for the routine checks using the software voltage adjustment method . 34 Figure H.1 – An example characterization of charge delay vs. Ip . 37 Figure I.1 – Examples of discharge circuit where the discharge is caused by closing the switch . 39 Figure I.2 – Verification test equipment for measuring the discharge current flowing to the metal bar/board from the standard test module . 40 Figure I.3 – Current waveform. 40 Figure I.4 – Measurement circuit for verification method using a current probe . 41
Table 1 – CDM waveform characteristics for a 1 GHz bandwidth oscilloscope . 15 Table 2 – CDM waveform characteristics for a high-bandwidth (≥ 6 dez) oscilloscope . 15 Table 3 – CDM ESDS device classification levels . 18 Table A.1 – Specification for CDM tester verification modules (metal discs) . 19 Table G.1 – Example waveform parameter recording table
for the factor/offset adjustment method . 35 Table G.2 – Example waveform parameter recording table
for the software voltage adjustment method . 35 Table I.1 – Dimensions of the standard test modules . 38 Table I.2 – Specified current waveform . 40 Table I.3 – Range of peak current Ip1 for test equipment . 41 Table I.4 – Specification of peak current Ip1 for the current probe verification method . 42
SIST EN 60749-28:2017
IEC 60749-28:2017 © IEC 2017 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION ____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 28: Electrostatic discharge (ESD) sensitivity testing –
Charged device model (CDM) – device level
FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications transparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any services carried out by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 60749-28 has been prepared by IEC technical committee 47: Semiconductor devices in collaboration with IEC technical committee 101: Electrostatics. This standard is based on ESDA/JEDEC Joint Standard ANSI/ESDA/JEDEC JS-002 which resulted from the merging of JESD22-C101 and ANSI/ESD S5.3.1). It contains the essential elements from both standards. The co-operation of ANSI/ESDA/JEDEC is gratefully acknowledged.
SIST EN 60749-28:2017
– 6 – IEC 60749-28:2017 © IEC 2017 The text of this International Standard is based on the following documents: FDIS Report on voting 47/2362/FDIS 47/2379/RVD
Full information on the voting for the approval of this International Standard can be found in the report on voting indicated in the above table. This document has been drafted in accordance with the ISO/IEC Directives, Part 2. A list of all parts in the IEC 60749 series, published under the general title Semiconductor devices –Mechanical and climatic test methods, can be found on the IEC website. The committee has decided that the contents of this document will remain unchanged until the stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to the specific document. At this date, the document will be
• reconfirmed, • withdrawn, • replaced by a revised edition, or • amended. A bilingual version of this publication may be issued at a later date.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer.
SIST EN 60749-28:2017
IEC 60749-28:2017 © IEC 2017 – 7 –
INTRODUCTION The earliest electrostatic discharge (ESD) test models and standards simulate a charged object approaching a device and discharging through the device. The most common example is IEC 60749-26, the human body model (HBM). However, with the increasing use of automated device handling systems, another potentially destructive discharge mechanism, the charged device model (CDM), becomes increasingly important. In the CDM, a device itself becomes charged (e.g. by sliding on a surface (tribocharging) or by electric field induction) and is rapidly discharged (by an ESD event) as it closely approaches a conductive object. A critical feature of the CDM is the metal-metal discharge, which results in a very rapid transfer of charge through an air breakdown arc. The CDM test method also simulates metal-metal discharges arising from other similar scenarios, such as the discharging of charged metal objects to devices at different potential. Accurately quantifying and reproducing this fast metal-metal discharge event is very difficult, if not impossible, due to the limitations of the measuring equipment and its influence on the discharge event. The CDM discharge is generally completed in a few nanoseconds, and peak currents of tens of amperes have been observed. The peak current into the device will vary considerably depending on a large number of factors, including package type and parasitics. The typical failure mechanism observed in MOS devices for the CDM model is dielectric damage, although other damage has been noted. The CDM charge voltage sensitivity of a given device is package dependent. For example, the same integrated circuit (IC) in a small area package can be less susceptible to CDM damage at a given voltage compared to that same IC in a package of the same type with a larger area. It has been shown that CDM damage susceptibility correlates better to peak current levels than charge voltage.
SIST EN 60749-28:2017
– 8 – IEC 60749-28:2017 © IEC 2017 SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 28: Electrostatic discharge (ESD) sensitivity testing –
Charged device model (CDM) – device level
1 Scope
This part of IEC 60749 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex I.
The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels. 2 Normative references There are no normative references in this document. 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. ISO and IEC maintain terminological databases for use in standardization at the following addresses: • IEC Electropedia: available at http://www.electropedia.org/ • ISO Online browsing platform: available at http://www.iso.org/obp 3.1
CDM ESD
charged device model electrostatic discharge electrostatic discharge (ESD) using the charged device model (CDM) to simulate the actual discharge event that occurs when a charged device is quickly discharged to another object at a lower electrostatic potential through a single pin or terminal 3.2
CDM ESD tester
charged device model electrostatic discharge tester equipment that simulates the device level CDM ESD event using the non-socketed test method Note 1 to entry: "Equipment" is referred to as "tester" in this document. SIST EN 60749-28:2017
IEC 60749-28:2017 © IEC 2017 – 9 –
3.3
dielectric layer thin insulator placed atop the field plate used to separate the device from the field plate 3.4
field plate conductive plate used to elevate the potential of the device under test (DUT) by capacitive coupling Note 1 to entry: See Figure 1. 3.5
ground plane conductive plate used to complete the circuitry for grounding/discharging the DUT Note 1 to entry: See Figure 1. 3.6
software voltage user/operator-entered voltage that, when combined with the scale factor or offset, sets the actual field plate voltage on the system in order to achieve the waveform parameters Note 1 to entry: Waveform parameters are defined in Table 1 or Table 2. 3.7
test condition
TC tester plate voltage that meets the waveform parameter conditions
Note 1
...
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