IEC 62435-3:2020 describes the aspects of data storage that are necessary for successful use of electronic components being stored after long periods while maintaining traceability or chain of custody. It defines what sort of data needs to be stored alongside the components or dies and the best way to do so in order to avoid losing data during the storage period. As defined in this document, long-term storage refers to a duration that can be more than twelve months for products scheduled for long duration storage. Philosophy, good working practice, and general means to facilitate the successful long-term-storage of electronic components are also addressed. NOTE: In IEC 62435 (all parts), the term "components" is used interchangeably with dice, wafers, passives and packaged devices.

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IEC 60749-18:2019 is available as IEC 60749-18:2019 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: - updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing; - addition of a Bibliography, which includes ASTM standards relevant to this test method.

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The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. The objectives of the test are as follows: a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).

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IEC 62435-6:2018 on long-term storage applies to packaged or finished devices in long-term storage that can be used as part of obsolescence mitigation strategy. Long-term storage refers to a duration that can be more than 12 months for product scheduled for storage. Philosophy, good working practice, and general means to facilitate the successful long-term storage of electronic components are also addressed.

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IEC 62969-4:2018 specifies a method of directly fault injection test for automotive semiconductor sensor interface that can be used to support the conformance assurance in the vehicle communications interface.

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IEC 62435-4:2018(E) specifies long-term storage methods and recommended conditions for long-term storage of electronic components including logistics, controls and security related to the storage facility. Long-term storage refers to a duration that may be more than 12 months for products scheduled for long duration storage. The philosophy of such storage, good working practices and general means to facilitate the successful long-term storage of electronic components are also addressed.

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IEC 62969-3:2018 describes terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance characteristics of mechanical shock driven piezoelectric energy harvesting devices for automotive vehicle sensor applications. This document is also applicable to energy harvesting devices for motorbikes, automobiles, buses, trucks and their respective engineering subsystems applications without any limitations of device technology and size.

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IEC 62969-2:2018 specifies procedures and definitions for measuring the efficiency of the wireless power transmission system for the automotive vehicles sensors. This document deals with the power range below 500 mW.

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IEC 60749-13:2018 describes a salt atmosphere test that determines the resistance of semiconductor devices to corrosion. It is an accelerated test that simulates the effects of severe sea-coast atmosphere on all exposed surfaces. It is only applicable to those devices specified for a marine environment. The salt atmosphere test is considered destructive. This edition includes the following significant technical changes with respect to the previous edition: a) alignment with MIL-STD-883J Method 1009.8, Salt Atmosphere (Corrosion), including information on conditioning and maintenance of the test chamber and mounting of test specimens (including explanatory figures).

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IEC 60749-26:2018 establishes the procedure for testing, evaluating, and classifying components and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The purpose of this document is to establish a test method that will replicate HBM failures and provide reliable, repeatable HBM ESD test results from tester to tester, regardless of component type. Repeatable data will allow accurate classifications and comparisons of HBM ESD sensitivity levels. ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC 60749-27) or other ESD test methods in the IEC 60749 series. Unless otherwise specified, this test method is the one selected. This fourth edition cancels and replaces the third edition published in 2013. This edition constitutes a technical revision. This standard is based upon ANSI/ESDA/JEDEC JS-001-2014. It is used with permission of the copyright holders, ESD Association and JEDEC Solid state Technology Association. This edition includes the following significant technical changes with respect to the previous edition: a) a new subclause relating to HBM stressing with a low parasitic simulator is added, together with a test to determine if an HBM simulator is a low parasitic simulator; b) a new subclause is added for cloned non-supply pins and a new annex is added for testing cloned non-supply pins.

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IEC 60749-12:2017 describes a test to determine the effect of variable frequency vibration, within the specified frequency range, on internal structural elements. This is a destructive test. It is normally applicable to cavity-type packages This second edition cancels and replaces the first edition published in 2002. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: a) alignment with MIL-STD-883J Method 2007, Vibration, variable frequency.

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IEC 62969-1:2017(E) provides general requirements for performance evaluations and environmental conditions for the power interface of automotive vehicle sensors. For performance evaluations, various electrical performances such as voltage drop from power source to automotive sensors, AC noises and voltage level are included. For environmental conditions, various test conditions such as temperature, humidity and vibration are included. In addition, terms, definitions, symbols and configurations are covered in this part.

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IEC 60749-43:2017 gives guidelines for reliability qualification plans of semiconductor integrated circuit products (ICs). This document is not intended for military- and space-related applications.

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IEC 60749-5:2017(E) provides a steady-state temperature and humidity bias life test for the purpose of evaluating the reliability of non-hermetic packaged solid-state devices in humid environments. This second edition cancels and replaces the first edition published in 2003. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: a)   correction of an error in an equation; b)   inclusion of notes for guidance; c)   clarification of the applicability of test conditions.

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IEC 60749-28:2017(E) establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex I. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels.

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IEC 60749-4:2017(E) provides a highly accelerated temperature and humidity stress test (HAST) for the purpose of evaluating the reliability of non-hermetic packaged semiconductor devices in humid environments. This edition includes the following significant technical changes with respect to the previous edition: a) clarification of requirements for temperature, relative humidity and duration detailed in Table 1; b) recommendations that current limiting resistor(s) be placed in the test set-up to prevent test board or DUT damage; c) allowance of additional time-to-test delay or return-to-stress delay.

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IEC 60749-6:2017(E) is to test and determine the effect on all solid state electronic devices of storage at elevated temperature without electrical stress applied. This test is typically used to determine the effects of time and temperature, under storage conditions, for thermally activated failure methods and time-to-failure of solid state electronic devices, including non-volatile memory devices (data-retention failure mechanisms). This test is considered non-destructive but should preferably be used for device qualification. If such devices are used for delivery, the effects of this highly accelerated stress test will need to be evaluated. Thermally activated failure mechanisms are modelled using the Arrhenius equation for acceleration, and guidance on the selection of test temperatures and durations can be found in IEC 60749-43. This edition includes the following significant technical changes with respect to the previous edition: a) additional test conditions; b) clarification of the applicability of test conditions.

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IEC 60749-9:2017(E) is to determine whether the marks on solid state semiconductor devices will remain legible when subjected to the application and removal of labels or the use of solvents and cleaning solutions commonly used during the removal of solder flux residue from the printed circuit board manufacturing process. This test is applicable for all package types. It is suitable for use in qualification and/or process monitor testing. The test is considered non-destructive. Electrical or mechanical rejects can be used for the purpose of this test. This edition includes the following significant technical changes with respect to the previous edition: a) revision to Clause 4 Equipment by a complete rewriting of Clause 3 Terms and definitions; b) additional variant – ‘adhesive tape pull test’.

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IEC 60749-3:2017(E) is to verify that the materials, design, construction, markings, and workmanship of a semiconductor device are in accordance with the applicable procurement document. External visual inspection is a non-destructive test and applicable for all package types. The test is useful for qualification, process monitor, or lot acceptance. This edition includes the following significant technical changes with respect to the previous edition: a) reference to the need for ESD protection; b) inclusion of information on the phenomenon of tin whiskers; c) inclusion of an optional report form/checklist.

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IEC 62435-2:2017 is related to deterioration mechanisms and is concerned with the way that components degrade over time depending on the storage conditions applied. This part also includes guidance on test methods that may be used to assess generic deterioration mechanisms. Typically, this part is used in conjunction with IEC 62435-1:2017 for any device long-term storage whose duration may be more than 12 months for product scheduled for long duration storage.

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IEC 62435-1:2017 on long-term-storage covers the terms, definitions and principles of long-term-storage that can be used in as an obsolescence mitigation strategy. Long-term storage refers to a duration that can be more than 12 months for products scheduled for long duration storage. Philosophy, good working practice, and general means to facilitate the successful long-term-storage of electronic components are also addressed. This standard cancels and replaces IEC/PAS 62435 published in 2005. This first edition constitutes a technical revision.

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IEC 62435-5:2017 is applicable to long-term storage of die and wafer devices and establishes specific storage regimen and conditions for singulated bare die and partial or complete wafers of die including die with added structures such as redistribution layers and solder balls or bumps or other metallisation. This part also provides guidelines for special requirements and primary packaging that contain the die or wafers for handling purposes.  Typically, this part is used in conjunction with IEC 62435-1:2017 for long-term storage of devices whose duration can be more than 12 months for products scheduled for long duration storage.

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IEC 60749-44:2016 establishes a procedure for measuring the single event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays. The single event effects sensitivity is measured while the device is irradiated in a neutron beam of known flux. This test method can be applied to any type of integrated circuit. NOTE 1 - Semiconductor devices under high voltage stress can be subject to single event effects including SEB, single event burnout and SEGR single event gate rupture, for this subject which is not covered in this document, please refer to IEC 62396-4. NOTE 2 - In addition to the high energy neutrons some devices can have a soft error rate due to low energy (<1 eV) thermal neutrons. For this subject which is not covered in this document, please refer to IEC 62396-5.

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IEC 62779-3:2016 defines a functional type of a semiconductor interface for human body communication (HBC). This part includes the categorization of the interface for HBC according to the contact condition; and performance parameters characterizing the interface of each category.

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IEC 62779-1:2016 defines general requirements for a semiconductor interface used in human body communication (HBC). It includes general and functional specifications of the interface, as well as limiting values and its operating conditions.

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IEC 62779-2:2016 defines a measurement method on electrical performances of an electrode that composes a semiconductor interface for human body communication (HBC). In the measurement method, a signal transmitter is electrically isolated from a signal receiver, so an isolation condition between the transmitter and receiver is maintained to accurately measure the electrode's performances. This part includes general and functional specifications of the measurement method.

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IEC 60749-42:2014 provides a test method to evaluate the endurance of semiconductor devices used in high temperature and high humidity environments. This test method is used to evaluate the endurance against corrosion of the metallic interconnection of chips of semiconductor devices contained in plastic moulded and other types of packages. It is also used as a means of accelerating the leakage phenomena due to the moisture penetration through the passivation film and as a pre-conditioning for various kinds of tests.

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IEC/TR 62258-4:2012 has been developed to facilitate the production, supply and use of semiconductor die products, including: - wafers; - singulated bare die; - die and wafers with attached connection structures; - minimally or partially encapsulated die and wafers. This technical report contains a questionnaire, based on the requirements of other parts of IEC 62258, which may be used in negotiations and contracts between suppliers and purchasers of die devices. It is intended to assist all those involved in the supply chain for die devices to comply with the requirements of the IEC 62258-1:2009 and IEC 62258-2:2011 standards. It should be recognized that the tables contained in this technical report form a checklist of information that can potentially be supplied and that it may not be relevant or possible to complete all fields. Different markets may require different subsets of the information requested herein. This edition includes the following significant technical changes with respect to the previous edition: The document checklist was changed to mirror IEC 62258-1:2009 requirements exactly.

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This part of IEC 60749 establishes a standard procedure for testing and classifying semiconductor devices according to their susceptibility to damage or degradation by exposure to a defined machine model (MM) electrostatic discharge (ESD). It may be used as an alternative test method to the human body model ESD test method. The objective is to provide reliable, repeatable ESD test results so that accurate classifications can be performed. This test method is applicable to all semiconductor devices and is classified as destructive. ESD testing of semiconductor devices is selected from this test method, the human body model (HBM - see IEC 60749-26) or other test methods in the IEC 60749 series. The MM and HBM test methods produce similar but not identical results. Unless otherwise specified, the HBM test method is the one selected.

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IEC 60749-7:2011 specifies the testing and measurement of water vapour and other gas content of the atmosphere inside a metal or ceramic hermetically sealed device. The test is used as a measure of the quality of the sealing process and to provide information about the long-term chemical stability of the atmosphere inside the package. It is applicable to semiconductor devices sealed in such a manner but generally only used for high reliability applications such as military or aerospace. This test is destructive. This second edition cancels and replaces the first edition published in 2002 and constitutes a technical revision. This second edition has been completely re-written so as to align it with the text of the latest versions of MIL-STD-750, method 1018 and MIL-STD-883, method 1018. The main change is the removal of the two alternative methods formerly designated method 2 and method 3.

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IEC 60749-40:2011 is intended to evaluate and compare drop performance of a surface mount semiconductor device for handheld electronic product applications in an accelerated test environment, where excessive flexure of a circuit board causes product failure. The purpose is to standardize test methodology to provide a reproducible assessment of the drop test performance of a surface mounted semiconductor devices while duplicating the failure modes normally observed during product level test. This international standard uses a strain gauge to measure the strain and strain rate of a board in the vicinity of a component.

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IEC 60749-21:2011 establishes a standard procedure for determining the solderability of device package terminations that are intended to be joined to another surface using tin-lead (SnPb) or lead-free (Pb-free) solder for the attachment. This test method provides a procedure for 'dip and look' solderability testing of through hole, axial and surface mount devices (SMDs) as well as an optional procedure for a board mounting solderability test for SMDs for the purpose of allowing simulation of the soldering process to be used in the device application. The test method also provides optional conditions for ageing. This test is considered destructive unless otherwise detailed in the relevant specification.
NOTE 1 This test method is in general accord with IEC 60068, but due to specific requirements of semiconductors, the following text is applied.
NOTE 2 This test method does not assess the effect of thermal stresses which may occur during the soldering process. Reference should be made IEC 60749-15 or IEC 60749-20.
This standard cancels and replaces the first edition published in 2004 and constitutes a technical revision. The significant change is the inclusion of Pb (lead)-free backward compatibility.

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IEC 60749-29:2011 covers the I-test and the overvoltage latch-up testing of integrated circuits. The purpose of this test is toestablish a method for determining integrated circuit (IC) latch-up characteristics and to define latch-up failure criteria. Latch-up characteristics are used in determining product reliability and minimizing 'no trouble found' (NTF) and 'electrical overstress' (EOS) failures due to latch-up. This second edition cancels and replaces the first edition published in 2003 and constitutes a technical revision. The significant changes with respect to the previous edition include: - a number of minor technical changes; - the addition of two new annexes covering the testing of special pins and temperature calculations.

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This part of EN 62258 has been developed to facilitate the production, supply and use of semiconductor die products, including but not limited to - singulated bare die, - minimally or partially encapsulated die and wafers. This standard specifies the data formats that may be used for the exchange of data covered by other parts in the EN 62258 series as well as definitions of all parameters used according to the principles and methods of EN 61360-1, EN 61360-2 and EN 61360-4. It introduces a Device Data Exchange (DDX) format, with the prime goal of facilitating the transfer of adequate geometric data between the die manufacturer and the CAD/CAE user and formal information models that allow data exchange in other formats such as STEP physical file format, fin accordance with ISO 10303-21 and XML. The data format has been kept intentionally flexible to permit usage beyond this initial scope. This standard reflects the DDX data format: version 1.2.1.

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This part of IEC 60749 establishes a standard procedure for determining the preconditioning of non-hermetic surface mount devices (SMDs) prior to reliability testing. The test method defines the preconditioning flow for non-hermetic solid-state SMDs representative of a typical industry multiple solder reflow operation. These SMDs should be subjected to the appropriate preconditioning sequence described in this standard prior to being submitted to specific in-house reliability testing (qualification and/or reliability monitoring) in order to evaluate long term reliability (impacted by soldering stress).

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This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as “burn-in”, may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard.

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note: "corrigendum issued February 2011 (on the three language versions)

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IEC 60749-34:2010 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive. This second edition cancels and replaces the first edition published in 2004 and constitutes a technical revision. The significant changes with respect from the previous edition include: - the specification of tighter conditions for more accelerated power cycling in the wire bond fatigue mode; - information that under harsh power cycling conditions high current densities in a thin die metalization might initiate electromigration effects close to wire bonds.

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IEC 60749-15:2010 describes a test used to determine whether encapsulated solid state devices used for through-hole mounting can withstand the effects of the temperature to which they are subjected during soldering of their leads by using wave soldering or a soldering iron. This second edition cancels and replaces the first edition published in 2003 and constitutes a technical revision. The significant changes with respect from the previous edition include: - editorial change in the scope; - addition of lead-free solder chemical composition specification.

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IEC 62374-1:2010 describes a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.

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IEC 62047-4:2008 describes the generic specifications for micro-electromechanical systems (MEMS) made by semiconductors, which are the basis for specifications given in other parts of this series for various types of MEMS applications such as sensors, RF MEMS, excluding optical MEMS, bio MEMS, micro TAS, and power MEMS. This standard specifies general procedures for quality assessment to be used in IECQ-CECC systems and establishes general principles for describing and testing of electrical, optical, mechanical and environmental characteristics. IEC 62047-4:2008 aids in the preparation of standards that define devices and systems made by micromachining technology, including but not limited to, material characterization and handling, assembly and testing, process control and measuring methods. MEMS described in this standard are basically made of semiconductor material. However, the statements made in this standard are also applicable to MEMS using materials other than semiconductor, for example, polymers, glass, metals and ceramic materials.

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IEC 62258-1:2009 has been developed to facilitate the production, supply and use of semiconductor die products, including: - wafers, - singulated bare die, - die and wafers with attached connection structures, - minimally or partially encapsulated die and wafers. This standard defines the minimum requirements for the data that are needed to describe such die products and is intended as an aid to the design of and procurement for assemblies incorporating die products. It covers the requirements for data, including: - product identity, - product data, - die mechanical information, - test, quality, assembly and reliability information, - handling, shipping and storage information. The main changes that have been introduced in this edition have been to ensure consistency across all parts of the standard. The ordering of the subclauses, particularly in Clause 6, has been changed to be more logical and the text of some of the requirements has been amended to add requirements on further information as covered by IEC/TR 62258-4, IEC/TR 62258-7 and IEC/TR 62258-8. New requirements include information on permutability of terminals and functional elements (6.6.4) and moisture sensitivity for partially encapsulated devices (8.8).

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Amandma A1:2010 je dodatek k standardu SIST EN 60749-32:2004
This part of IEC 60749 is applicable to semiconductor devices (discrete devices and integrated circuits). The object of this test is to determine whether the device ignites due to external heating. The test uses a needle flame, simulating the effect of small flames which may result from fault conditions within equipment containing the device. NOTE This test is identical to the test method contained in 1.2 of chapter 4 of IEC 60749 (1996), apart from the addition of this clause, the addition of titles to clauses 2 and 3 and renumbering.

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Amandma A1:2010 je dodatek k standardu SIST EN 60749-19:2004
This part of IEC 60749 determines (see note) the integrity of materials and procedures used to attach semiconductor die to package headers or other substrates (for the purpose of this test method, the term “semiconductor die” should be taken to include passive elements). This test method is generally only applicable to cavity packages or as a process monitor. It is not applicable for die areas greater than 10 mm2. It is also not applicable to flip chip technology or to flexible substrates. NOTE This determination is based on a measure of the force applied to the die or to the element, and, if a failure occurs, the type of failure resulting from the application of force and the visual appearance of the residual die attach medium and the header/substrate metallization.

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IEC 62418:2010 describes a method of metallization stress void test and associated criteria. It is applicable to aluminium (Al) or copper (Cu) metallization.

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IEC 62416:2010 describes the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.

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IEC 62415:2010 describes a method for conventional constant current electromigration testing of metal lines, via string and contacts.

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IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

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IEC 60749-20:2008 provides a means of assessing the resistance to soldering heat of semiconductors packaged as plastic encapsulated surface mount devices (SMDs). This test is destructive. This second edition cancels and replaces the first edition published in 2002 and constitutes a technical revision. The main changes are as follows: - to reconcile certain classifications of IEC 60749-20 and those of IPC/JEDEC J-STD-020C; - reference IEC 60749-35 instead of Annex A of IEC 60749-20, Edition 1; - update for lead-free solder; - correct certain errors in the original Edition 1.

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IEC 60749-20-1:2009 applies to all non-hermetic SMD packages which are subjected to reflow solder processes and which are exposed to the ambient air. The purpose of this document is to provide SMD manufacturers and users with standardized methods for handling, packing, shipping, and use of moisture/reflow sensitive SMDs which have been classified to the levels defined in IEC 60749-20. These methods are provided to avoid damage from moisture absorption and exposure to solder reflow temperatures that can result in yield and reliability degradation. By using these procedures, safe and damage-free reflow can be achieved, with the dry packing process, providing a minimum shelf life capability in sealed dry-bags from the seal date.

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