IEC 62047-25:2016

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology.

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 25: Technologie de fabrication de MEMS à base de silicium - Méthode de mesure de la résistance à la traction-compression et au cisaillement d'une micro zone de brasure

L'IEC 62047-25:2016 spécifie la méthode d'essai in situ pour mesurer la résistance de brasure d'une microzone de brasure fabriquée par des technologies de micro-usinage utilisées dans un système microélectromécanique (MEMS) à base de silicium. Le présent document s'applique à la mesure in situ de la résistance à la traction-compression et de la résistance au cisaillement d'une microzone de brasure fabriquée par un processus microélectronique et d'autres technologies de micro-usinage.

General Information

• Status: Published
• Publication Date: 28-Aug-2016
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47F - Micro-electromechanical systems
• Drafting Committee: WG 1 - TC 47/SC 47F/WG 1
• Current Stage: PPUB - Publication issued
• Start Date: 15-Oct-2016
• Completion Date: 29-Aug-2016

Standards Content (Sample)

IEC 62047-25 ®
Edition 1.0 2016-08
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 25: Silicon based MEMS fabrication technology – Measurement method of
pull-press and shearing strength of micro bonding area

Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 25: Technologie de fabrication de MEMS à base de silicium – Méthode de
mesure de la résistance à la traction-compression et au cisaillement d'une
micro zone de brasure
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IEC 62047-25 ®
Edition 1.0 2016-08
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –

Part 25: Silicon based MEMS fabrication technology – Measurement method of

pull-press and shearing strength of micro bonding area

Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –

Partie 25: Technologie de fabrication de MEMS à base de silicium – Méthode de

mesure de la résistance à la traction-compression et au cisaillement d'une

micro zone de brasure
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99 ISBN 978-2-8322-3609-3

– 2 – IEC 62047-25:2016 © IEC 2016
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references. 6
3 Terms and definitions . 6
4 Requirements . 7
4.1 Testing structure design requirements . 7
4.2 Testing structure fabrication requirements . 9
4.3 Testing environment requirements . 9
5 Testing method . 9
5.1 General . 9
5.2 Pull-press testing method . 9
5.2.1 Imposing the loading force . 9
5.2.2 Pull-press testing method operation process . 9
5.2.3 Pull-press testing method result process . 10
5.3 Shearing testing method . 10
5.3.1 Shearing testing method operation process . 10
5.3.2 Shearing testing method result process . 12
Annex A (informative) Dimensions for testing structure and tensile/compressive
strength . 13
A.1 Dimensions for testing structure . 13
A.2 Tensile strength and compressive strength . 13
Annex B (informative) Pull-press testing method example . 21
B.1 Dimensions for testing structure . 21
B.2 Tensile strength and compressive strength . 21

Figure 1 − Pull-press testing structure . 7
Figure 2 − Shearing testing structure . 8
Figure 3 − Pull-press testing method operation process . 10
Figure 4 − Shearing testing method operation process . 11

Table 1 – Dimensions for shearing testing structure . 12
Table A.1 – Dimensions for testing structure . 13
Table A.2 – Tensile strength and compressive strength (bonding area: 10 µm × 10 µm) . 13
Table A.3 – Tensile strength and compressive strength (bonding area: 20 µm × 20 µm) . 14
Table A.4 – Tensile strength and compressive strength (bonding area: 30 µm × 30 µm) . 14
Table A.5 – Tensile strength and compressive strength (bonding area: 40 µm × 40 µm) . 15
Table A.6 – Tensile strength and compressive strength (bonding area: 50 µm × 50 µm) . 15
Table A.7 – Tensile strength and compressive strength (bonding area: 60 µm × 60 µm) . 15
Table A.8 – Tensile strength and compressive strength (bonding area: 70 µm × 70 µm) . 16
Table A.9 – Tensile strength and compressive strength (bonding area: 80 µm × 80 µm) . 16
Table A.10 – Tensile strength and compressive strength (bonding area:
90 µm × 90 µm) . 17
Table A.11 – Tensile strength and compressive strength (bonding area:
100 µm × 100 µm) . 17

Table A.12 – Tensile strength and compressive strength (bonding area:
110 µm × 110 µm) . 18
Table A.13 – Tensile strength and compressive strength (bonding area:
120 µm × 120 µm) . 18
Table A.14 – Tensile strength and compressive strength (bonding area:
130 µm × 130 µm) . 19
Table A.15 – Tensile strength and compressive strength (bonding area:
140 µm × 140 µm) . 19
Table A.16 – Tensile strength and compressive strength (bonding area:
150 µm × 150 µm) . 20
Table B.1 – Dimensions for testing structure . 21
Table B.2 – Tensile strength and compressive strength (bonding area:
110 µm × 110 µm) . 21

– 4 – IEC 62047-25:2016 © IEC 2016
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 25: Silicon based MEMS fabrication technology – Measurement
method of pull-press and shearing strength of micro bonding area

FOREWORD
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