ISO 5618-2:2024
(Main)Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for GaN crystal surface defects — Part 2: Method for determining etch pit density
Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for GaN crystal surface defects — Part 2: Method for determining etch pit density
This document describes a method for determining the etch pit density, which is used to detect dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films. It is applicable to the defects specified in ISO 5618-1 from among the defects exposed on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al2O3, SiC, or Si substrate. It is applicable to defects with an etch pit density of ≤ 7 × 107 cm-2.
Céramiques techniques — Méthode d’essai pour les défauts de surface des cristaux de GaN — Partie 2: Méthode de détermination de la densité des piqûres
Le présent document décrit une méthode de détermination de la densité des piqûres qui est utilisée pour détecter les dislocations et les défauts induits par le process et qui sont rencontrés sur les substrats de GaN monocristallin ou les films de GaN monocristallin. Il est applicable aux défauts spécifiés dans l’ISO 5618-1 parmi les défauts émergents à la surface des types de substrats ou de films de GaN suivants: substrat de GaN monocristallin, film de GaN monocristallin formé par croissance homoépitaxiale sur un substrat de GaN monocristallin ou film de GaN monocristallin formé par croissance hétéroépitaxiale sur un substrat monocristallin de Al2O3, SiC ou Si. Il est applicable aux défauts dont la densité des piqûres est ≤ 7 × 107 cm-2.
General Information
Buy Standard
Standards Content (Sample)
International
Standard
ISO 5618-2
First edition
Fine ceramics (advanced ceramics,
2024-04
advanced technical ceramics) —
Test method for GaN crystal surface
defects —
Part 2:
Method for determining etch pit
density
Céramiques techniques — Méthode d’essai pour les défauts de
surface des cristaux de GaN —
Partie 2: Méthode de détermination de la densité des piqûres
Reference number
ISO 5618-2:2024(en) © ISO 2024
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ISO 5618-2:2024(en)
COPYRIGHT PROTECTED DOCUMENT
© ISO 2024
All rights reserved. Unless otherwise specified, or required in the context of its implementation, no part of this publication may
be reproduced or utilized otherwise in any form or by any means, electronic or mechanical, including photocopying, or posting on
the internet or an intranet, without prior written permission. Permission can be requested from either ISO at the address below
or ISO’s member body in the country of the requester.
ISO copyright office
CP 401 • Ch. de Blandonnet 8
CH-1214 Vernier, Geneva
Phone: +41 22 749 01 11
Email: copyright@iso.org
Website: www.iso.org
Published in Switzerland
© ISO 2024 – All rights reserved
ii
---------------------- Page: 2 ----------------------
ISO 5618-2:2024(en)
Contents Page
Foreword .iv
Introduction .v
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Principle . 3
5 Definition of substrate in-plane position . 3
6 Procedures for forming an etch pit . 3
6.1 Pre-treatment of a sample .3
6.2 Etching process .4
6.3 Washing .4
7 Method of capturing an etch pit image . . 5
7.1 Setting the observation conditions for an optical microscope .5
7.1.1 Objective lens .5
7.1.2 Image resolution .5
7.1.3 Measurement area .6
7.1.4 Measurement points .6
7.2 Capturing an etch pit image by using an optical microscope .
...
Norme
internationale
ISO 5618-2
Première édition
Céramiques techniques — Méthode
2024-04
d’essai pour les défauts de surface
des cristaux de GaN —
Partie 2:
Méthode de détermination de la
densité des piqûres
Fine ceramics (advanced ceramics, advanced technical
ceramics) — Test method for GaN crystal surface defects —
Part 2: Method for determining etch pit density
Numéro de référence
ISO 5618-2:2024(fr) © ISO 2024
---------------------- Page: 1 ----------------------
ISO 5618-2:2024(fr)
DOCUMENT PROTÉGÉ PAR COPYRIGHT
© ISO 2024
Tous droits réservés. Sauf prescription différente ou nécessité dans le contexte de sa mise en œuvre, aucune partie de cette
publication ne peut être reproduite ni utilisée sous quelque forme que ce soit et par aucun procédé, électronique ou mécanique,
y compris la photocopie, ou la diffusion sur l’internet ou sur un intranet, sans autorisation écrite préalable. Une autorisation peut
être demandée à l’ISO à l’adresse ci-après ou au comité membre de l’ISO dans le pays du demandeur.
ISO copyright office
Case postale 401 • Ch. de Blandonnet 8
CH-1214 Vernier, Genève
Tél.: +41 22 749 01 11
E-mail: copyright@iso.org
Web: www.iso.org
Publié en Suisse
© ISO 2024 – Tous droits réservés
ii
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ISO 5618-2:2024(fr)
Sommaire Page
Avant-propos .v
Introduction .vi
1 Domaine d’application . 1
2 Références normatives . 1
3 Termes et définitions . 1
4 Principe. 3
5 Définition de la position dans le plan du substrat . 3
6 Procédures de formation d’une piqûre . 4
6.1 Prétraitement d’un échantillon .4
6.2 Procédé de gravure .4
6.3 Lavage . .4
7 Méthode d’acquisition d’images de piqûres . 5
7.1 Réglage des conditions d’observation d’un microscope optique .5
7.1.1 Lentille objectif .5
7.1.2 Résolution de l’image .5
7.1.3 Zone de mesure . .6
7.1.4 Points de mesure .6
7.2 Acquisition d’images de piqûres à l’aide d’un microscope optique .7
...
International
Standard
ISO 5618-2
First edition
Fine ceramics (advanced ceramics,
advanced technical ceramics) —
Test method for GaN crystal surface
defects —
Part 2:
Method for determining etch pit
density
PROOF/ÉPREUVE
Reference number
ISO 5618-2:2024(en) © ISO 2024
---------------------- Page: 1 ----------------------
ISO 5618-2:2024(en)
COPYRIGHT PROTECTED DOCUMENT
© ISO 2024
All rights reserved. Unless otherwise specified, or required in the context of its implementation, no part of this publication may
be reproduced or utilized otherwise in any form or by any means, electronic or mechanical, including photocopying, or posting on
the internet or an intranet, without prior written permission. Permission can be requested from either ISO at the address below
or ISO’s member body in the country of the requester.
ISO copyright office
CP 401 • Ch. de Blandonnet 8
CH-1214 Vernier, Geneva
Phone: +41 22 749 01 11
Email: copyright@iso.org
Website: www.iso.org
Published in Switzerland
PROOF/ÉPREUVE
© ISO 2024 – All rights reserved
ii
---------------------- Page: 2 ----------------------
ISO 5618-2:2024(en)
Contents Page
Foreword .iv
Introduction .v
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Principle . 3
5 Definition of substrate in-plane position . 3
6 Procedures for forming an etch pit . 3
6.1 Pre-treatment of a sample .3
6.2 Etching process .4
6.3 Washing .4
7 Method of capturing an etch pit image . . 5
7.1 Setting the observation conditions for an optical microscope .5
7.1.1 Objective lens .5
7.1.2 Image resolution .5
7.1.3 Measurement area .6
7.1.4 Measurement points .6
7.2 Capturing an etch pit image by using an optical microscope .7
8 Method of calculating the etch pit density .
...
ISO/PRF 5618-2:2024(E)
Date: 2024-01-16
ISO /TC 206/WG 7
Secretariat: JISC
Date: 2024-02-26
Fine ceramics (advanced ceramics, advanced technical ceramics) —
Test method for GaN crystal surface defects — Part 2: Method for
determining etch pit density
Part 2:
Method for determining etch pit density
PROOF
---------------------- Page: 1 ----------------------
ISO/PRF 5618-2:2024(Een)
© ISO 2024
All rights reserved. Unless otherwise specified, or required in the context of its implementation, no part of this publication
may be reproduced or utilized otherwise in any form or by any means, electronic or mechanical, including photocopying,
or posting on the internet or an intranet, without prior written permission. Permission can be requested from either ISO
at the address below or ISO'sISO’s member body in the country of the requester.
ISO copyright office
CP 401 • Ch. de Blandonnet 8
CH-1214 Vernier, Geneva
Phone: + 41 22 749 01 11
EmailE-mail: copyright@iso.org
Website: www.iso.orgwww.iso.org
Published in Switzerland
ii © ISO 2024 – All rights reserved
© ISO 2024 – All rights reserved
ii
---------------------- Page: 2 ----------------------
ISO/PRF 5618-2:2024(Een)
Contents
Foreword . vii
Introduction. viii
1 Scope .1
2 Normative references .1
3 Terms and definitions .1
4 Principle .3
5 Definition of substrate in-plane position .3
6 Procedures for forming an etch pit .4
6.1 Pre-treatment of a sample .4
6.2 Etching process .5
6.3 Washing .5
7 Method of capturing an etch pit image .7
7.1 Setting the observation conditions for an optical microscope .7
7.1.1 Objective lens .7
7.1.2 Image resolution .7
7.1.3 Measurement area .8
7.1.4 Measurement points .8
7.2 Capturing an etch pit image by using an optical microscope .9
8 Method of calculating the etch pit density .9
8.1 Etch pit counting criteria .
...
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