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oSIST prEN IEC 62276:2023

(Main)

Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods

Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods

Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und Messverfahren

Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques de surface (OAS) - Spécifications et méthodes de mesure

Enokristalne rezine za površinske zvočnovalovne naprave (SAW) - Specifikacije in merilne metode

General Information

Status
Not Published
Public Enquiry End Date
26-Oct-2023
ICS
31.140 - Piezoelectric devices
Technical Committee
I11 - Imaginarni 11
Current Stage
4020 - Public enquire (PE) (Adopted Project)
Start Date
09-Aug-2023
Due Date
27-Dec-2023
Ref Project
prEN IEC 62276:2023 - Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods

Relations

Revises
SIST EN 62276:2017 - Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (IEC 62276:2016)
Effective Date
22-Mar-2022

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Standards Content (Sample)

SLOVENSKI STANDARD
oSIST prEN IEC 62276:2023
01-oktober-2023
Enokristalne rezine za površinske zvočnovalovne naprave (SAW) - Specifikacije in
merilne metode
Single crystal wafers for surface acoustic wave (SAW) device applications -
Specifications and measuring methods
Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und
Messverfahren
Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques
de surface (OAS) - Spécifications et méthodes de mesure
Ta slovenski standard je istoveten z: prEN IEC 62276:2023
ICS:
31.140 Piezoelektrične naprave Piezoelectric devices
oSIST prEN IEC 62276:2023 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

---------------------- Page: 1 ----------------------
oSIST prEN IEC 62276:2023

---------------------- Page: 2 ----------------------
oSIST prEN IEC 62276:2023
49/1425/CDV

COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 62276 ED4
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2023-08-04 2023-10-27
SUPERSEDES DOCUMENTS:
49/1406/CD, 49/1423/CC

IEC TC 49 : PIEZOELECTRIC, DIELECTRIC AND ELECTROSTATIC DEVICES AND ASSOCIATED MATERIALS FOR FREQUENCY CONTROL,
SELECTION AND DETECTION
SECRETARIAT: SECRETARY:
Japan Mr Masanobu Okazaki
OF INTEREST TO THE FOLLOWING COMMITTEES: PROPOSED HORIZONTAL STANDARD:


Other TC/SCs are requested to indicate their interest, if any,
in this CDV to the secretary.
FUNCTIONS CONCERNED:
EMC ENVIRONMENT QUALITY ASSURANCE SAFETY
SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING
Attention IEC-CENELEC parallel voting
The attention of IEC National Committees, members of
CENELEC, is drawn to the fact that this Committee Draft for
Vote (CDV) is submitted for parallel voting.
The CENELEC members are invited to vote through the
CENELEC online voting system.

This document is still under study and subject to change. It should not be used for reference purposes.
Recipients of this document are invited to submit, with their comments, notification of any relevant patent rights of which they
are aware and to provide supporting documentation.
Recipients of this document are invited to submit, with their comments, notification of any relevant “In So me Countries”
clauses to be included should this proposal proceed. Recipients are reminded that the CDV stage is the final stage for
submitting ISC clauses. (SEE AC/22/2007 OR NEW GUIDANCE DOC).

TITLE:
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and
measuring methods

PROPOSED STABILITY DATE: 2027

NOTE FROM TC/SC OFFICERS:

Copyright © 2023 International Electrotechnical Commission, IEC. All rights reserved. It is permitted to download this
electronic file, to make a copy and to print out the content for the sole purpose of preparing National Committee positions.
You may not copy or "mirror" the file or printed version of the document, or any part of it, for any other purpose without
permission in writing from IEC.

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oSIST prEN IEC 62276:2023
IEC CDV 62276 ED4 © IEC 2023 2 49/1425/CDV

1 CONTENTS
2
3 FOREWORD . 6
4 INTRODUCTION . 8
5 1 Scope . 9
6 2 Normative references . 9
7 3 Terms and definitions . 9
8 3.1 Single crystals for SAW wafer . 9
9 3.2 Terms and definitions related to LN and LT crystals . 10
10 3.3 Terms and definitions related to all crystals . 10
11 3.4 Flatness . 11
12 3.5 Definitions of appearance defects . 13
13 3.6 Other terms and definitions . 14
14 4 Requirements . 15
15 4.1 Material specification . 15
16 4.1.1 Synthetic quartz crystal .
...

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