ASTM E1162-11

Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)

SIGNIFICANCE AND USE
This practice is used for reporting the experimental conditions as specified in Section 6 in the “Methods” or “Experimental” sections of other publications (subject to editorial restrictions).
The report would include specific conditions for each data set, particularly, if any parameters are changed for different sputter depth profile data sets in a publication. For example, footnotes of tables or figure captions would be used to specify differing conditions.
SCOPE
1.1 This practice covers the information needed to describe and report instrumentation, specimen parameters, experimental conditions, and data reduction procedures. SIMS sputter depth profiles can be obtained using a wide variety of primary beam excitation conditions, mass analysis, data acquisition, and processing techniques (1-4).  
1.2 Limitations—This practice is limited to conventional sputter depth profiles in which information is averaged over the analyzed area in the plane of the specimen. Ion microprobe or microscope techniques permitting lateral spatial resolution of secondary ions within the analyzed area, for example, image depth profiling, are excluded.
1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 31-Oct-2011
• ICS: 71.040.50 - Physicochemical methods of analysis
• Technical Committee: E42 - Surface Analysis
• Drafting Committee: E42.06 - SIMS

Relations

• Replaces: ASTM E1162-06 - Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
• Effective Date: 01-Nov-2011
• Replaced By: ASTM E1162-11(2019) - Standard Practice for Reporting Sputter Depth Profile Data in Secondary Ion Mass Spectrometry (SIMS)
• Effective Date: 01-Nov-2019

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation:E1162 −11
Standard Practice for
Reporting Sputter Depth Profile Data in Secondary Ion Mass
1
Spectrometry (SIMS)
This standard is issued under the fixed designation E1162; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 4. Summary of Practice
1.1 This practice covers the information needed to describe 4.1 Experimental conditions and variables that affect SIMS
andreportinstrumentation,specimenparameters,experimental sputter depth profiles (1-4) and tabulated raw data (where
conditions, and data reduction procedures. SIMS sputter depth feasible) are reported to facilitate comparisons to other labo-
profiles can be obtained using a wide variety of primary beam ratories or specimens, and to results of other analytical tech-
excitation conditions, mass analysis, data acquisition, and niques.
2
processing techniques (1-4).
5. Significance and Use
1.2 Limitations—This practice is limited to conventional
5.1 This practice is used for reporting the experimental
sputterdepthprofilesinwhichinformationisaveragedoverthe
conditions as specified in Section 6 in the “Methods” or
analyzed area in the plane of the specimen. Ion microprobe or
“Experimental” sections of other publications (subject to
microscope techniques permitting lateral spatial resolution of
editorial restrictions).
secondary ions within the analyzed area, for example, image
5.2 The report would include specific conditions for each
depth profiling, are excluded.
data set, particularly, if any parameters are changed for
1.3 The values stated in SI units are to be regarded as
different sputter depth profile data sets in a publication. For
standard. No other units of measurement are included in this
example, footnotes of tables or figure captions would be used
standard.
to specify differing conditions.
1.4 This standard does not purport to address all of the
6. Information to Be Reported
safety concerns, if any, associated with its use. It is the
responsibility of the user of this standard to establish appro-
6.1 Instrumentation:
priate safety and health practices and determine the applica-
6.1.1 IfastandardcommercialSIMSsystemisused,specify
bility of regulatory limitations prior to use.
the manufacturer and instrument model number and type of
analyzer, such as, magnetic sector, quadrupole, time-of-flight,
2. Referenced Documents
and so forth. Specify, the model numbers and manufacturer of
3
2.1 ASTM Standards:
any accessory or auxiliary equipment relevant to the depth
E673TerminologyRelatingtoSurfaceAnalysis(Withdrawn
profiling study (for example, special specimen stage, primary
4
2012)
mass filter, primary ion source, electron flood gun, vacuum
pumps, data acquisition system, and source of software, etc.).
3. Terminology
6.1.2 If a nonstandard commercial SIMS system is used,
3.1 For definitions of terms used in this practice, see
specify the manufacturer and model numbers of components
Terminology E673.
(for example, primary ion source, mass analyzer, data system,
and accessory equipment).
1
This practice is under the jurisdiction of ASTM Committee E42 on Surface
6.2 Specimen:
Analysis and is the direct reponsibility of Subcommittee E42.06 on SIMS.
6.2.1 Describe the specimen as completely as possible. For
Current edition approved Nov. 1, 2011. Published December 2011. Originally
approved in 1987. Last previous edition approved in 2006 as E1162–06. DOI:
example, specify its bulk composition, preanalysis history,
10.1520/E1162-11.
physical dimensions. If the specimen contains dopants, for
2
The boldface numbers in parentheses refer to the references at the end of this
example, semiconductors, report the dopant type and concen-
standard.
3
tration. For multicomponent specimens, state the degree of
For referenced ASTM standards, visit the ASTM website, www.astm.org, or
contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
specimen homogeneity. Describe any known contaminants.
Standards volume information, refer to the standard’s Document Summary page on
6.2.2 State the method of mounting and positioning the
the ASTM website.
4 specimen for analysis. Specify any physical treatment of the
The last approved version of this historical standard is referenced on
www.astm.org. specimenmountedintheSIMSanalysischamber(forexample,
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1

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E1162−11
heated, cooled, electron bombarded, and so forth). Note the 6.3.4 Vacuum—Specify pressures in the primary column,
specimen pote
...

This document is not anASTM standard and is intended only to provide the user of anASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately,ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
Designation:E1162–06 Designation: E1162 – 11
Standard Practice for
Reporting Sputter Depth Profile Data in Secondary Ion Mass
1
Spectrometry (SIMS)
This standard is issued under the fixed designation E1162; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope
1.1 This practice covers the information needed to describe and report instrumentation, specimen parameters, experimental
conditions, and data reduction procedures. SIMS sputter depth profiles can be obtained using a wide variety of primary beam
2
excitation conditions, mass analysis, data acquisition, and processing techniques (1-4).
1.2 Limitations—This practice is limited to conventional sputter depth profiles in which information is averaged over the
analyzed area in the plane of the specimen. Ion microprobe or microscope techniques permitting lateral spatial resolution of
secondary ions within the analyzed area, for example, image depth profiling, are excluded.
1.3
1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility
of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory
limitations prior to use.
2. Referenced Documents
3
2.1 ASTM Standards:
E673 Terminology Relating to Surface Analysis
3. Terminology
3.1 For definitions of terms used in this practice, see Terminology E673.
4. Summary of Practice
4.1 Experimental conditions and variables that affect SIMS sputter depth profiles (1-4) and tabulated raw data (where feasible)
are reported to facilitate comparisons to other laboratories or specimens, and to results of other analytical techniques.
5. Significance and Use
5.1 ThispracticeisusedforreportingtheexperimentalconditionsasspecifiedinSection6inthe“Methods”or“Experimental”
sections of other publications (subject to editorial restrictions).
5.2 The report would include specific conditions for each data set, particularly, if any parameters are changed for different
sputterdepthprofiledatasetsinapublication.Forexample,footnotesoftablesorfigurecaptionswouldbeusedtospecifydiffering
conditions.
6. Information to Be Reported
6.1 Instrumentation:
6.1.1 If a standard commercial SIMS system is used, specify the manufacturer and instrument model number and type of
analyzer, such as, magnetic sector, quadrupole, time-of-flight, and so forth. Specify, the model numbers and manufacturer of any
accessory or auxiliary equipment relevant to the depth profiling study (for example, special specimen stage, primary mass filter,
primary ion source, electron flood gun, vacuum pumps, data acquisition system, and source of software, etc.).
6.1.2 If a nonstandard commercial SIMS system is used, specify the manufacturer and model numbers of components (for
example, primary ion source, mass analyzer, data system, and accessory equipment).
1
This practice is under the jurisdiction of ASTM Committee E42 on Surface Analysis and is the direct reponsibility of Subcommittee E42.06 on SIMS.
Current edition approved Nov. 1, 2006.2011. Published November 2006.December 2011. Originally approved in 1987. Last previous edition approved in 20012006 as
E1162–87(2001).E1162–06. DOI: 10.1520/E1162-06.10.1520/E1162-11.
2
The boldface numbers in parentheses refer to the references at the end of this standard.
3
ForreferencedASTMstandards,visittheASTMwebsite,www.astm.org,[e-mail] Annual Book of ASTM Standards
volume information, refer to the standard’s Document Summary page on the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
1

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E1162 – 11
6.2 Specimen:
6.2.1 Describethespecimenascompletelyaspossible.Forexample,specifyitsbulkcomposition,preanalysishistory,physical
dimensions. If the specimen contains dopants, for example, semiconductors, report the dopant type and concentration. For
multicomponent specimens, state the degree of specimen homogeneity. Describe any known contaminants.
6.2.2 State the method of mounting and positioning the specimen for analysis. Specify any ph
...