prEN IEC 62276:2024
(Main)Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
IEC 62276:2025 applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filters and resonators. This edition includes the following significant technical changes with respect to the previous edition: a) The terms and definitions, the technical requirements, sampling frequency, test methods and measurement of transmittance, lightness, colour difference for LN and LT have been added in order to meet the needs of industry development; b) The term “inclusion” (mentioned in 4.13 and 6.10) and its definition have been added because there was no definition for it in Clause 3; c) The specification of LTV and PLTV, and the corresponding description of sampling frequency for LN and LT have been added, because they are the key performance parameters for the wafers; d) The tolerance of Curie temperature specification for LN and LT have been added in order to meet the development requirements of the industry; e) Measurement of thickness, TV5, TTV, LTV and PLTV have been completed, including measurement principle and method of thickness, TV5, TTV, LTV and PLTV.
Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und Messverfahren
Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques de surface (OAS) - Spécifications et méthodes de mesure
L'IEC 62276:2025 s’applique à la fabrication de tranches monocristallines de quartz synthétique, de niobate de lithium (LN), de tantalate de lithium (LT), de tétraborate de lithium (LBO) et de silicate de gallium et de lanthane (LGS), destinées à être utilisées comme substrats dans la fabrication de résonateurs et de filtres à ondes acoustiques de surface (OAS). Cette édition inclut les modifications techniques majeures suivantes par rapport à l’édition précédente: a) les termes et définitions, les exigences techniques, la fréquence d’échantillonnage, les méthodes d'essai et la mesure de la transmission, de la clarté et de la différence de couleur pour le LN et le LT ont été ajoutés, afin de satisfaire aux besoins de développement industriel; b) le terme « inclusion » mentionné en 4.13 et 6.10 et sa définition ont été ajoutés à l'Article 3, dans la mesure où ils n'était pas suffisamment défini; c) la spécification de la LTV et du PLTV, et la description correspondante de la fréquence d'échantillonnage pour le LN et le LT ont été ajoutées, dans la mesure où elles correspondent aux paramètres de performances clés pour les tranches; d) la tolérance de la spécification relative à la température de Curie pour le LN et le LT a été ajoutée afin de satisfaire aux exigences de développement de l'industrie; e) la mesure de l'épaisseur, de la TV5, de la TTV, de la LTV et du PLTV a été réalisée, y compris le principe et la méthode de mesure de l'épaisseur, de la TV5, de la TTV, de la LTV et du PLTV.
Monokristalne rezine za površinske zvočnovalovne naprave (SAW) - Specifikacije in merilne metode
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Standards Content (Sample)
SLOVENSKI STANDARD
01-maj-2024
Monokristalne rezine za površinske zvočnovalovne naprave (SAW) - Specifikacije
in merilne metode
Single crystal wafers for surface acoustic wave (SAW) device applications -
Specifications and measuring methods
Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und
Messverfahren
Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques
de surface (OAS) - Spécifications et méthodes de mesure
Ta slovenski standard je istoveten z: prEN IEC 62276:2024
ICS:
31.140 Piezoelektrične naprave Piezoelectric devices
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
49/1454/CDV
COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 62276 ED4
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2024-03-22 2024-05-17
SUPERSEDES DOCUMENTS:
49/1425/CDV, 49/1448/RVC
IEC TC 49 : PIEZOELECTRIC, DIELECTRIC AND ELECTROSTATIC DEVICES AND ASSOCIATED MATERIALS FOR FREQUENCY
CONTROL, SELECTION AND DETECTION
SECRETARIAT: SECRETARY:
Japan Mr Masanobu Okazaki
OF INTEREST TO THE FOLLOWING COMMITTEES: PROPOSED HORIZONTAL STANDARD:
Other TC/SCs are requested to indicate their interest, if
any, in this CDV to the secretary.
FUNCTIONS CONCERNED:
EMC ENVIRONMENT QUALITY ASSURANCE SAFETY
SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING
Attention IEC-CENELEC parallel voting
The attention of IEC National Committees, members of
CENELEC, is drawn to the fact that this Committee Draft
for Vote (CDV) is submitted for parallel voting.
The CENELEC members are invited to vote through the
CENELEC online voting system.
This document is still under study and subject to change. It should not be used for reference purposes.
Recipients of this document are invited to submit, with their comments, notification of any relevant patent rights of
which they are aware and to provide supporting documentation.
Recipients of this document are invited to submit, with their comments, notification of any relevant “In Some
Countries” clauses to be included should this proposal proceed. Recipients are reminded that the CDV stage is
the final stage for submitting ISC clauses. (SEE AC/22/2007 OR NEW GUIDANCE DOC).
TITLE:
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and
measuring methods
PROPOSED STABILITY DATE: 2027
NOTE FROM TC/SC OFFICERS:
download this electronic file, to make a copy and to print out the content for the sole purpose of preparing National
Committee positions. You may not copy or "mirror" the file or printed version of the document, or any part of it,
for any other purpose without permission in writing from IEC.
IEC CDV 62276 ED4 © IEC 2024 – 2 – 49/1454/CDV
1 CONTENTS
3 1 Scope . 5
4 2 Normative references . 5
5 3 Terms and definitions . 5
6 3.1 Flatness . 5
7 3.2 Appearance defects . 8
8 3.3 Other terms and definitions . 8
9 3.4 Terms and definitions related to LN and LT wafers. 9
10 4 Requirements . 10
11 4.1 General . 10
12 4.2 Diameters and tolerances . 10
13 4.3 Thickness and tolerance . 10
14 4.4 Orientation flat . 11
15 4.5 Secondary flat . 11
16 4.6 Front (propagation) surface roughness . 11
17 4.7 Back surface roughness . 11
18 4.8 Warp . 11
19 4.9 TV5, TTV . 11
20 4.10 LTV, PLTV . 12
21 4.11 Front surface defects . 12
22 4.12 Tolerance of surface orientation . 13
23 4.13 Inclusions . 13
24 4.14 Position of seed in synthetic quartz wafer . 13
25 4.15 Electrical twins in synthetic quartz wafer . 13
26 4.16 Bevel . 13
27 4.17 Bulk resistivity (conductivity) for reduced LN and reduced LT . 13
28 4.18 Transmittance . 13
29 4.19 Lightness . 13
30 4.20 Colour difference . 13
31 5 Sampling plan . 13
32 5.1 General . 13
33 5.2 Sampling. 13
34 6 Test methods . 14
35 6.1 Diameter . 14
36 6.2 Thickness . 14
37 6.3 Existence and position of OF and SF . 14
38 6.4 Dimensions of OF and SF . 14
39 6.5 Orientation of OF and SF . 14
40 6.6 TV5 . 14
41 6.7 Warp . 15
42 6.8 TTV, LTV and PLTV . 15
43 6.9 Front surface defects . 15
44 6.10 Inclusions . 15
45 6.11 Position of seed in synthetic quartz wafer . 15
46 6.12 Electrical twins in synthetic quartz wafer . 15
47 6.13 Bevel . 15
IEC CDV 62276 ED4 © IEC 2024 – 3 – 49/1454/CDV
48 6.14 Front surface and back surface roughness . 15
49 6.15 Orientation . 15
50 6.16 Bulk resistivity . 15
51 6.17 Transmittance . 15
52 6.18 Lightness . 15
53 6.19 Colour difference . 15
54 7 Identification, labelling, packaging, delivery condition . 15
55 7.1 Packaging . 15
56 7.2 Labelling and identification . 16
57 7.3 Delivery condition . 16
58 8 Measurements of orientation by X-ray. 16
59 8.1 Measurement principle . 16
60 8.2 Measurement method . 16
61 8.3 Measuring surface orientation . 17
62 8.4 Measuring OF flat orientation . 17
63 8.5 Typical wafer orientations and reference planes. 17
64 9 Measurement of bulk resistivity . 17
65 9.1 Resistance measurement . 17
66 9.2 Electrode . 18
67 9.3 Bulk resistivity . 19
68 10 Visual inspections – Front surface defects and inclusions inspection method. 19
69 11 Measurement of thickness and thickness variation . 20
70 11.1 Measurement principle . 20
71 11.1.1 Contact measurement . 20
72 11.1.2 Contactless measurement . 20
73 11.2 Sample . 20
74 11.3 Measurement method . 20
75 11.3.1 Contact measurement . 20
76 11.3.2 Contactless measurement . 20
77 12 Measurement of transmittance . 21
78 12.1 Measurement principle . 21
79 12.2 Sample . 21
80 12.3 Measurement method . 21
81 13 Measurement of lightness and colour difference . 21
82 13.1 Measurement principle . 21
83 13.2 Sample . 21
84 13.3 Measurement method . 22
85 Annex A (normative) Expression using Euler angle description for piezoelectric single
86 crystals . 24
87 Annex B (informative) Manufacturing process for SAW wafers . 27
88 B.1 Crystal growth methods . 27
89 B.1.1 Czochralski growth method . 27
90 B.1.2 Vertical Bridgman method . 29
91 B.1.3 Hydrothermal temperature gradient method . 30
92 B.2 Standard mechanical wafer manufacturing . 30
93 B.2.1 Process flow-chart . 30
94 B.2.2 Cutting both ends and cylindrical grinding . 31
95 B.2.3 Marking orientation . 31
------
...
SLOVENSKI STANDARD
oSIST prEN IEC 62276:2023
01-oktober-2023
Enokristalne rezine za površinske zvočnovalovne naprave (SAW) - Specifikacije in
merilne metode
Single crystal wafers for surface acoustic wave (SAW) device applications -
Specifications and measuring methods
Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und
Messverfahren
Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques
de surface (OAS) - Spécifications et méthodes de mesure
Ta slovenski standard je istoveten z: prEN IEC 62276:2023
ICS:
31.140 Piezoelektrične naprave Piezoelectric devices
oSIST prEN IEC 62276:2023 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
oSIST prEN IEC 62276:2023
oSIST prEN IEC 62276:2023
49/1425/CDV
COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 62276 ED4
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2023-08-04 2023-10-27
SUPERSEDES DOCUMENTS:
49/1406/CD, 49/1423/CC
IEC TC 49 : PIEZOELECTRIC, DIELECTRIC AND ELECTROSTATIC DEVICES AND ASSOCIATED MATERIALS FOR FREQUENCY CONTROL,
SELECTION AND DETECTION
SECRETARIAT: SECRETARY:
Japan Mr Masanobu Okazaki
OF INTEREST TO THE FOLLOWING COMMITTEES: PROPOSED HORIZONTAL STANDARD:
Other TC/SCs are requested to indicate their interest, if any,
in this CDV to the secretary.
FUNCTIONS CONCERNED:
EMC ENVIRONMENT QUALITY ASSURANCE SAFETY
SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING
Attention IEC-CENELEC parallel voting
The attention of IEC National Committees, members of
CENELEC, is drawn to the fact that this Committee Draft for
Vote (CDV) is submitted for parallel voting.
The CENELEC members are invited to vote through the
CENELEC online voting system.
This document is still under study and subject to change. It should not be used for reference purposes.
Recipients of this document are invited to submit, with their comments, notification of any relevant patent rights of which they
are aware and to provide supporting documentation.
Recipients of this document are invited to submit, with their comments, notification of any relevant “In So me Countries”
clauses to be included should this proposal proceed. Recipients are reminded that the CDV stage is the final stage for
submitting ISC clauses. (SEE AC/22/2007 OR NEW GUIDANCE DOC).
TITLE:
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and
measuring methods
PROPOSED STABILITY DATE: 2027
NOTE FROM TC/SC OFFICERS:
electronic file, to make a copy and to print out the content for the sole purpose of preparing National Committee positions.
You may not copy or "mirror" the file or printed version of the document, or any part of it, for any other purpose without
permission in writing from IEC.
oSIST prEN IEC 62276:2023
IEC CDV 62276 ED4 © IEC 2023 2 49/1425/CDV
1 CONTENTS
3 FOREWORD . 6
4 INTRODUCTION . 8
5 1 Scope . 9
6 2 Normative references . 9
7 3 Terms and definitions . 9
8 3.1 Single crystals for SAW wafer . 9
9 3.2 Terms and definitions related to LN and LT crystals . 10
10 3.3 Terms and definitions related to all crystals . 10
11 3.4 Flatness . 11
12 3.5 Definitions of appearance defects . 13
13 3.6 Other terms and definitions . 14
14 4 Requirements . 15
15 4.1 Material specification . 15
16 4.1.1 Synthetic quartz crystal . 15
17 4.1.2 LN . 15
18 4.1.3 LT . 15
19 4.1.4 LBO, LGS . 15
20 4.2 Wafer specifications . 15
21 4.2.1 General . 15
22 4.2.2 Diameters and tolerances . 16
23 4.2.3 Thickness and tolerance . 16
24 4.2.4 Orientation flat . 16
25 4.2.5 Secondary flat. 16
26 4.2.6 Back surface roughness . 16
27 4.2.7 Warp . 16
28 4.2.8 TV5, TTV . 17
29 4.2.9 LTV, PLTV . 17
30 4.2.10 Front (propagation) surface finish . 17
31 4.2.11 Front surface defects . 18
32 4.2.12 Surface orientation tolerance . 18
33 4.2.13 Inclusions . 18
34 4.2.14 Etch channel number and position of seed for quartz wafer . 18
35 4.2.15 Bevel . 18
36 4.2.16 Curie temperature and tolerance . 18
37 4.2.17 Lattice constant . 19
38 4.2.18 Bulk resistivity (conductivity) for reduced LN and LT . 19
39 4.2.19 Transmittance . 19
40 4.2.20 Lightness . 19
41 4.2.21 Colour difference . 19
42 5 Sampling plan . 19
43 5.1 General . 19
44 5.2 Sampling . 19
45 5.3 Sampling frequency. 19
46 5.4 Inspection of whole population . 20
47 6 Test methods . 20
oSIST prEN IEC 62276:2023
IEC CDV 62276 ED4 © IEC 2023 3 49/1425/CDV
48 6.1 Diameter . 20
49 6.2 Thickness . 20
50 6.3 Dimension of OF . 20
51 6.4 Orientation of OF . 20
52 6.5 TV5 . 20
53 6.6 Warp . 20
54 6.7 TTV, LTV and PLTV . 20
55 6.8 Front surface defects . 20
56 6.9 Inclusions . 20
57 6.10 Back surface roughness . 20
58 6.11 Orientation . 20
59 6.12 Curie temperature . 21
60 6.13 Lattice constant . 21
61 6.14 Bulk resistivity . 21
62 6.15 Transmittance . 21
63 6.16 Lightness . 21
64 6.17 Colour difference . 21
65 7 Identification, labelling, packaging, delivery condition . 21
66 7.1 Packaging . 21
67 7.2 Labelling and identification . 21
68 7.3 Delivery condition . 21
69 8 Measurement of Curie temperature. 21
70 8.1 General . 21
71 8.2 DTA method . 21
72 8.3 Dielectric constant method . 22
73 9 Measurement of lattice constant (Bond method) . 22
74 10 Measurement of face angle by X-ray . 23
75 10.1 Measurement principle . 23
76 10.2 Measurement method . 24
77 10.3 Measuring surface orientation of wafer . 24
78 10.4 Measuring OF flat orientation . 24
79 10.5 Typical wafer orientations and reference planes . 25
80 11 Measurement of bulk resistivity. 25
81 11.1 Resistance measurement of a wafer . 25
82 11.2 Electrode . 26
83 11.3 Bulk resistivity . 26
84 12 Visual inspections – Front surface inspection method . 27
85 13 Measurement of thickness and thickness variation . 27
86 13.1 Measurement principle . 27
87 13.1.1 Contact measurement . 27
88 13.1.2 Contactless measurement . 27
89 13.2 Sample . 28
90 13.3 Measurement method . 28
91 13.3.1 Contact measurement . 28
92 13.3.2 Contactless measurement . 28
93 14 Measurement of transmittance . 28
94 14.1 Measurement principle . 28
95 14.2 Sample .
...
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