IEC 62047-8:2011

Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films

IEC 62047-8:2011 specifies the strip bending test method to measure tensile properties of thin films with high accuracy, repeatability, moderate effort of alignment and handling compared to the conventional tensile test. This testing method is valid for test pieces with a thickness between 50 nm and several mum, and with an aspect ratio (ratio of length to thickness) of more than 300. The hanging strip (or bridge) between two fixed supports are widely adopted in MEMS or micro-machines. It is much easier to fabricate these strips than the conventional tensile test pieces. The test procedures are so simple to be readily automated. This international standard can be utilized as a quality control test for MEMS production since its testing throughput is very high compared to the conventional tensile test.

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 8: Méthode d'essai de la flexion de bandes en vue de la mesure des propriétés de traction des couches minces

La CEI 62047-8:2011 spécifie la méthode d'essai de flexion de bandes, afin de mesurer les propriétés de traction des couches minces avec une haute précision, répétabilité, un effort modéré d'alignement et de manipulation en comparaison de l'essai de traction conventionnel. La méthode d'essai est valable pour les éprouvettes d'essai dont l'épaisseur est comprise entre 50 nm et plusieurs mum, et dont le rapport, (soit le rapport de la longueur de l'éprouvette à son épaisseur) est supérieur 300. La bande suspendue (ou le pont) entre deux supports fixés est largement adoptée dans les MEMS ou dans les micromachines. Ces bandes sont bien plus faciles à fabriquer que les éprouvettes d'essai à la traction conventionnelles. Les procédures d'essai sont si simples qu'elles sont aisément automatisées. La présente norme internationale peut être utilisée en tant qu'essai de contrôle de la qualité pour la production des MEMS étant donné que son débit d'essai est très élevé comparé à l'essai de traction conventionnel.

General Information

• Status: Published
• Publication Date: 13-Mar-2011
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47F - Micro-electromechanical systems
• Drafting Committee: WG 1 - TC 47/SC 47F/WG 1
• Current Stage: PPUB - Publication issued
• Start Date: 15-Apr-2011
• Completion Date: 14-Mar-2011

Standards Content (Sample)

IEC 62047-8 ®
Edition 1.0 2011-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 8: Strip bending test method for tensile property measurement of thin films

Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 8: Méthode d’essai de la flexion de bandes en vue de la mesure des
propriétés de traction des couches minces

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IEC 62047-8 ®
Edition 1.0 2011-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 8: Strip bending test method for tensile property measurement of thin films

Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 8: Méthode d’essai de la flexion de bandes en vue de la mesure des
propriétés de traction des couches minces

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX R
ICS 31.080.99 ISBN 978-2-88912-395-7

– 2 – 62047-8 Ó IEC:2011
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Test apparatus . 5
4.1 General . 5
4.2 Actuator . 6
4.3 Load tip . 6
4.4 Alignment mechanism . 6
4.5 Force and displacement sensors . 6
4.6 Test environment. 6
5 Test piece . 6
5.1 General . 6
5.2 Shape of test piece . 7
5.3 Measurement of test piece dimension . 7
6 Test procedure and analysis . 8
6.1 General . 8
6.2 Data analysis . 8
7 Test report. 9
Annex A (informative) Data analysis: Test results by using nanoindentation apparatus . 10
Annex B (informative) Test piece fabrication: MEMS process . 13
Annex C (informative) Effect of misalignment and geometry on property measurement . 15
Bibliography . 18

Figure 1 – Thin film test piece . 7
Figure 2 – Schematic of strip bending test . 9
Figure A.1 – Three successive indents for determining the reference location of a test
piece . 10
Figure A.2 – A schematic view of nanoindentation apparatus . 11
Figure A.3 – Actuator force vs. deflection curves for strip bending test and for leaf
spring test . 11
Figure A.4 – Force vs. deflection curve of a test piece after compensating the stiffness
of the leaf spring . 12
Figure B.1 – Fabrication procedure for test piece . 13
Figure C.1 – Finite element analysis of errors based on the constitutive data of Au thin
film of 1 mm thick . 16
Figure C.2 – Translational (d) and angular (a, b, g) misalignments . 17

Table 1 – Symbols and designations of a test piece . 7

62047-8 Ó IEC:2011 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 8: Strip bending test method
for tensile property measurement of thin films

FOREWORD
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International Standard IEC 62047-8 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices
The text of this standard is based on the following documents:
FDIS Report on voting
47F/71/FDIS 47F/77/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts of IEC 62047, under the general title Semiconductor devices – Micro-
electromechanical devices can be found on the IEC website.

– 4 – 62047-8 Ó IEC:2011
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