IEC 62047-9:2011

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

Dispositifs à semiconducteurs - Dispositif microélectromécaniques - Partie 9: Mesure de la résistance de collage de deux plaquettes pour les MEMS

La CEI 62047-9:2011 décrit une méthode de mesure de la résistance de collage de deux plaquettes, le type de processus de liaison, par exemple le collage par fusion de deux plaquettes de silicium, le collage anodique d'une plaquette de silicium et d'une plaquette de verre, etc., et la taille de la structure applicable pendant le traitement ou l'assemblage de systèmes microélectromécaniques (MEMS). L'épaisseur de plaquette applicable est dans la gamme comprise entre 10 ohmm et plusieurs millimètres. Le contenu du corrigendum de mars 2012 a été pris en considération dans cet exemplaire.

General Information

• Status: Published
• Publication Date: 12-Jul-2011
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47F - Micro-electromechanical systems
• Drafting Committee: WG 1 - TC 47/SC 47F/WG 1
• Current Stage: PPUB - Publication issued
• Start Date: 15-Aug-2011
• Completion Date: 13-Jul-2011

Relations

• Corrected By: IEC 62047-9:2011/COR1:2012 - Corrigendum 1 - Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 62047-9 ®
Edition 1.0 2011-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 9: Wafer to wafer bonding strength measurement for MEMS

Dispositifs à semiconducteurs – Dispositif microélectromécaniques –
Partie 9: Mesure de la résistance de collage de deux plaquettes pour les MEMS

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IEC 62047-9 ®
Edition 1.0 2011-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 9: Wafer to wafer bonding strength measurement for MEMS

Dispositifs à semiconducteurs – Dispositif microélectromécaniques –
Partie 9: Mesure de la résistance de collage de deux plaquettes pour les MEMS

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX T
ICS 31.080.99 ISBN 978-2-88912-585-2

– 2 – 62047-9  IEC:2011
CONTENTS
FOREWORD. 4
1 Scope . 6
2 Normative references . 6
3 Measurement methods . 6
3.1 General . 6
3.2 Visual test . 6
3.2.1 Types of visual test . 6
3.2.2 Equipment . 7
3.2.3 Procedure . 7
3.2.4 Expression of results . 7
3.3 Pull test . 7
3.3.1 General . 7
3.3.2 Equipment . 8
3.3.3 Procedure . 8
3.3.4 Expression of results . 9
3.4 Double cantilever beam test using blade . 9
3.4.1 General . 9
3.4.2 Equipment . 11
3.4.3 Procedure . 11
3.4.4 Expression of results . 11
3.5 Electrostatic test . 12
3.5.1 General . 12
3.5.2 Equipment . 13
3.5.3 Procedure . 13
3.5.4 Expression of results . 14
3.6 Blister test . 14
3.6.1 General . 14
3.6.2 Preparation of the specimens . 15
3.6.3 Test apparatus and testing method . 15
3.6.4 Report . 16
3.7 Three-point bending test . 16
3.7.1 General . 16
3.7.2 Preparation of the specimens . 17
3.7.3 Test apparatus and testing method . 18
3.7.4 Report . 19
3.8 Die shear test . 19
3.8.1 General . 19
3.8.2 Preparation of the specimens . 20
3.8.3 Test apparatus . 21
3.8.4 Test method . 21
3.8.5 Shear bonding strength . 22
3.8.6 Report . 22
Annex A (informative) Example of bonding force . 23
Annex B (informative) An example of the fabrication process for three-point bending
specimens . 24
Bibliography . 25

62047-9  IEC:2011 – 3 –
Figure 1 – Bonding strength measurement – pull test . 8
Figure 2 – Bonding strength measurement – double cantilever beam (DCB) test
specimen using blade . 10
Figure 3 – Bonding strength measurement – electrostatic test . 13
Figure 4 – A specimen for blister test . 15
Figure 5 – Three-point bending specimen and loading method . 17
Figure 6 – Specimen geometry of three-point bending specimen . 18
Figure 7 – Die shear testing set-up . 19
Figure 8 – Size requirement of control tool and specimen . 20
Figure 9 – Example of bonded region in test piece . 20
Figure 10 – Setting of contact tool . 22
Figure A.1 – An example of bonding force or load measurement with time at constant
rate of upper fixture moving . 23
Figure B.1 – An example of specimen preparation for three-point bending test . 24

Table 1 – Example of visual test . 7
Table 2 − Example of pull test . 9
Table 3 – Example of Double Cantilever Beam test using blade . 12
Table 4 – Example of electrostatic test . 14

– 4 – 62047-9  IEC:2011
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 9: Wafer to wafer bonding strength measurement for MEMS

FOREWORD
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