IEC 62047-56:2026

• Abstract:

  IEC 62047-56:2026 specifies the requirements and test method for characteristics of MEMS metal oxide semiconductor (MOS) type gas sensor.

• Status: Published
• Publication Date: 27-Oct-2026
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47F - Micro-electromechanical systems
• Current Stage: PPUB - Publication issued
• Start Date: 28-Oct-2026
• Completion Date: 20-Nov-2026

IEC 62047-56 ®
Edition 1.0 2026-10
INTERNATIONAL
STANDARD
Semiconductor devices - Micro-electromechanical devices -
Part 56: Test method for characteristics of MEMS metal oxide semiconductor
(MOS) type gas sensor
ICS 31.080.99 ISBN 978-2-8327-1568-0

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CONTENTS
FOREWORD . 2
INTRODUCTION . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Working principle of MOS type gas sensor. 7
4.1 General . 7
4.2 N-type MOS . 7
4.3 P-type MOS . 7
5 Test method . 8
5.1 General . 8
5.2 Configuration of the apparatus for characteristics measurement of MEMS
MOS type gas sensor . 9
5.3 Test procedure. 9
6 Data analysis . 10
6.1 Calculating results . 10
6.2 Test report . 11
Annex A (informative) . 12
A.1 Photograph of fabricated MEMS MOS type gas sensor as an example . 12
A.2 Measured data using MEMS MOS type gas sensor as an example. 12
Bibliography . 13

Figure 1 – Schematic illustration of MEMS MOS type gas sensor . 5
Figure 2 – An exemplary graph showing gas response of a MEMS MOS type gas
sensor . 7
Figure 3 – Schematic drawing of gas sensing mechanism: (a) N-type and (b) P-type
MOS gas sensors . 8
Figure 4 – Exemplary graph to define sensitivity of a MEMS MOS type gas sensor . 9
Figure 5 – Schematic drawing of the apparatus for characteristics measurement of
MEMS MOS type gas sensor . 9
Figure A.1 – Photograph of fabricated MEMS MOS type gas sensor as an example . 12

Table 1 – Table for test report of characteristics of MEMS MOS type gas sensor . 11
Table A.1 – Table for measured data using MEMS MOS type gas sensor as an
example . 12

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
Semiconductor devices - Micro-electromechanical devices -
Part 56: Test method for characteristics of MEMS metal oxide
semiconductor (MOS) type gas sensor

FOREWORD
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IEC 62047-56 has been prepared by subcommittee 47F: Micro-electromechanical devices, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47F/568/FDIS 47F/575/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
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A list of all parts in the IEC 62047 series, published under the general title Semiconductor
devices - Micro-electromechanical devices can be found on the IEC website.
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INTRODUCTION
Micro-electromechanical systems (MEMS) metal oxide semiconductor (MOS) type gas sensor
is one of key components in MEMS technologies including chemical MEMS and bio-MEMS.
MEMS MOS type gas sensor, in general, consists of MEMS structure with membrane for thermal
isolation, microheater for controlling operation temperature, insulator layer between
microheater and microelectrode, and microelectrode for measuring resistance change of gas
sensing materials on microelectrode. It is possible to detect specific gas or measure the gas
concentration by using highly sensitive and selective gas sensing materials.
Micro-electromechanical systems (MEMS) metal oxide semiconductor (MOS) gas sensors
represent a significant advancement in the field of gas detection technology. These sensors
leverage the integration of MEMS technology with the gas-sensitive properties of metal oxide
semiconductors to offer a compact, efficient, and highly sensitive solution for detecting a wide
range of gases. MEMS technology enables the miniaturization of gas sensors, enabling them
to be manufactured on a microscopic scale with high precision and at a lower cost. The use of
metal oxide semiconductors, such as tin oxide (SnO ), zinc oxide (ZnO), or titanium dioxide
(TiO ), provides the sensor with the ability to detect various gases through changes in electrical
resistance when exposed to target gases like hydrogen disulfide (H S), carbon monoxide (CO),
nitrogen dioxide (NO ), or volatile organic compounds (VOCs). The combination of MEMS and
MOS technologies results in sensors that are not only small and portable but also exhibit fast
response times, low power consumption, and high sensitivity. These attributes make MEMS
MOS gas sensors ideal for applications in environmental monitoring, industrial safety,
automotive exhaust control, and indoor air quality management. As the demand for more
efficient an
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