SIST EN 60758:2005
(Main)Synthetic quartz crystal - Specifications and guide to the use
Synthetic quartz crystal - Specifications and guide to the use
Applies to synthetic quartz single crystals intended for manufacturing piezoelectric elements for frequency control and selection.
Synthetischer Quarzkristall - Festlegungen und Leitfaden für die Anwendung
Quartz synthétique - Spécifications et guide d'utilisation
Applies to synthetic quartz single crystals intended for manufacturing piezoelectric elements for frequency control and selection.
Sintetični kremenčev kristal – Specifikacije in vodilo za uporabo (IEC 60758:2004)
General Information
Relations
Standards Content (Sample)
SLOVENSKI SIST EN 60758:2005
STANDARD
december 2005
Sintetični kremenčev kristal – Specifikacije in vodilo za uporabo (IEC
60758:2004)
Synthetic quartz crystal – Specifications and guide to the use (IEC 60758:2004)
ICS 31.140 Referenčna številka
SIST EN 60758:2005(en)
© Standard je založil in izdal Slovenski inštitut za standardizacijo. Razmnoževanje ali kopiranje celote ali delov tega dokumenta ni dovoljeno
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EUROPEAN STANDARD EN 60758
NORME EUROPÉENNE
EUROPÄISCHE NORM February 2005
ICS 31.140
English version
Synthetic quartz crystal –
Specifications and guide to the use
(IEC 60758:2004)
Quartz synthétique – Synthetischer Quarzkristall -
Spécifications et guide d'utilisation Festlegungen und Leitfaden
(CEI 60758:2004) für die Anwendung
(IEC 60758:2004)
This European Standard was approved by CENELEC on 2005-02-01. CENELEC members are bound to
comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European
Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and
notified to the Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, Czech
Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, Netherlands, Norway, Poland, Portugal, Slovakia, Slovenia, Spain, Sweden,
Switzerland and United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Central Secretariat: rue de Stassart 35, B - 1050 Brussels
© 2005 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 60758:2005 E
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EN 60758:2005 - 2 -
Foreword
The text of document 49/696/FDIS, future edition 3 of IEC 60758, prepared by IEC TC 49,
Piezoelectric and dielectric devices for frequency control and selection, was submitted to the
IEC-CENELEC parallel vote and was approved by CENELEC as EN 60758 on 2005-02-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2005-11-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2008-02-01
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 60758:2004 was approved by CENELEC as a European
Standard without any modification.
__________
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- 3 - EN 60758:2005
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.
NOTE Where an international publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
Publication Year Title EN/HD Year
1)
IEC 60068-1 1988 Environmental testing EN 60068-1 1994
Part 1: General and guidance
IEC 60122-1 2002 Quartz crystal units of assessed quality EN 60122-1 2002
Part 1: Generic specification
IEC 60410 1973 Sampling plans and procedures for - -
inspection by attributes
IEC 61994 Series Piezoelectric and dielectric devices for - -
frequency control and selection -
Glossary
1)
EN 60068-1 includes corrigendum October 1988 + A1:1992 to IEC 60068-1.
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INTERNATIONAL IEC
STANDARD
60758
Third edition
2004-12
Synthetic quartz crystal –
Specifications and guide to the use
� IEC 2004 � Copyright - all rights reserved
No part of this publication may be reproduced or utilized in any form or by any means, electronic or
mechanical, including photocopying and microfilm, without permission in writing from the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch Web: www.iec.ch
PRICE CODE
Commission Electrotechnique Internationale X
International Electrotechnical Commission
For price, see current catalogue
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– 2 – 60758 � IEC:2004(E)
CONTENTS
FOREWORD.4
1 Scope.6
2 Normative references .6
3 Terms and definitions .6
4 Specification for as-grown synthetic quartz crystal.10
4.1 Standard values .10
4.2 Requirements and measuring methods .11
4.3 Marking .17
5 Specification for lumbered synthetic quartz crystal .18
5.1 Standard values .18
5.2 Requirements and measuring methods .18
5.3 Delivery conditions .19
6 Inspection rule for synthetic quartz crystal and lumbered synthetic quartz crystal .19
6.1 Inspection rule for as-grown synthetic quartz crystal.19
6.2 Inspection rule for lumbered synthetic quartz crystal .20
7 Guide to the use of synthetic quartz crystal .21
7.1 General .21
7.2 Shape and size of synthetic quartz crystal .22
7.3 Standard method for evaluating the quality of synthetic quartz crystal .23
7.4 Other methods for checking the quality of synthetic quartz crystal .23
7.5 Alpha-grade.24
7.6 Optional grading (only as ordered), in inclusions, etch channels, Al content .24
7.7 Ordering .26
Annex A (informative) Frequently used sampling procedures .36
Annex B (informative) Numerical example.38
Annex C (informative) Example of reference sample selection .39
Annex D (informative) Explanations of point callipers.40
Annex E (informative) Infrared absorbance alpha value compensation .41
Bibliography.45
Figure 1 – Idealized sections of a synthetic quartz crystal grown on a Z-cut seed .27
Figure 2 – Quartz crystal axis and face designation .28
Figure 3 – Typical example of cutting wafers of AT-cut plate, minor rhombohedral-cut
plate, X-cut plate, Y-cut plate and Z-cut plate .29
Figure 4 – Frequency-temperature characteristics of the test specimen for slope.30
Figure 5 – Quartz crystal axis and face designation .31
Figure 6 – A synthetic quartz crystal grown on a Z-cut seed of small X-dimensions
(Crystals of other shapes are produced when Z-cut seeds of other proportions, or seeds
of other cuts, are used.) .32
Figure 7 – An example of an early 1970s relation between the extinction coefficient of
infra-red radiation and the Q-value of synthetic quartz .32
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60758 � IEC:2004(E) – 3 –
Figure 8 – Lumbered synthetic quartz crystal outline and dimensions along X-, Y- and
Z-axes .33
Figure 9 – Angular deviation for reference surface.34
Figure 10 – Centrality of the seed with respect to the dimension along the Z- or Z�-axis.35
Figure D.1a � Point callipers .40
Figure D.1b � Digital point callipers.40
Figure E.1 – Schematic of measurement set-up .42
Figure E.2 � Graph relationship between averaged alpha and measured alpha at three
wave numbers of � , � and � .44
3500 3585 3410
Table 1 – Inclusion densities for the grades .10
Table 2 – Infra-red quality indications for the grades.10
Table 3 – Etch channel densities for the grades .11
Table 4 � Test conditions and requirements for the lot-by-lot test for group A .20
Table 5 � Test conditions and requirements for the lot-by-lot test for group B .20
Table 6 � Test conditions and requirements for the lot-by-lot test.21
Table B.1 � Commodity bar sampling method 1 .38
Table B.2 � Commodity bar sampling .38
Table E.1 � Example of calibration data at � .43
3585
Table E.2 � Example of calibration data at � .43
3500
Table E.3 � Example of calibration data at � .43
3410
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INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SYNTHETIC QUARTZ CRYSTAL –
SPECIFICATIONS AND GUIDE TO THE USE
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in
addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports,
Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their
preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with
may participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for
Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence between
any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter.
5) IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any equipment
declared to be in conformity with an IEC Publication.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and expenses
arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60758 has been prepared by IEC technical committee 49:
Piezoelectric and dielectric devices for frequency control and selection.
This third edition cancels and replaces the second edition, published in 1993, and its
amendments 1 (1997) and 2 (2001).
This edition includes the following significant technical changes with respect to the previous
edition:
a) it combines the information given in the second edition and in the amendments into one
single document;
b) it adds the infrared absorbance alpha value compensation method as Annex E.
The text of this standard is based on the following documents:
FDIS RVD
49/696/FDIS 49/701/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
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60758 � IEC:2004(E) – 5 –
The committee has decided that the contents of this publication will remain unchanged until the
maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
reconfirmed,
withdrawn,
replaced by a revised edition, or
amended.
A bilingual version of this publication may be issued at a later date.
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– 6 – 60758 � IEC:2004(E)
SYNTHETIC QUARTZ CRYSTAL �
SPECIFICATIONS AND GUIDE TO THE USE
1 Scope
This International Standard applies to synthetic quartz single crystals intended for manu-
facturing piezoelectric elements for frequency control and selection.
2 Normative references
The following referenced documents are indispensable for the application of this document. For
dated references, only the edition cited applies. For undated references, the latest edition of the
referenced document (including any amendments) applies.
IEC 60068-1:1988, Environmental testing � Part 1: General and guidance
IEC 60122-1:2002, Quartz crystal units of assessed quality � Part 1: Generic specification.
IEC 60410:1973, Sampling plans and procedures for inspection by attributes
IEC 61994 (all parts), Piezoelectric and dielectric devices for frequency control and selection �
Glossary
3 Terms and definitions
For the purposes of this document, the following terms and definitions, as well as those given in
IEC 61994, apply.
3.1
hydrothermal crystal growth
literally, crystal growth in the presence of water, elevated temperatures and pressures by a
crystal growth process believed to proceed geologically within the earth's crust. The industrial
synthetic quartz growth processes utilize alkaline water solutions confined within autoclaves at
supercritical temperatures (330 °C to 400 °C) and pressures (700 to 2 000 atmospheres). The
autoclave is divided into two chambers: the dissolving chamber, containing raw quartz chips at
the higher temperature; the growing chamber, containing cut seeds at the lower temperature
(see 7.1.2)
3.2
synthetic quartz crystal (also known as cultured quartz crystal)
������������������ ������������������������������������������������������������������������������
and in the as-grown condition
3.2.1
as-grown synthetic quartz crystal
single crystal quartz grown hydrothermally. As-grown refers to the state of processing and
indicates a state prior to whatever treatment�might occur after growth, excluding quality control
operations
3.2.2
as-grown Y-bar
crystals which are produced using seed with the largest dimension in the Y-direction
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60758 � IEC:2004(E) – 7 –
3.2.3
as-grown Z-bar
crystals in which the Z-grown sector is much larger that the X-grown sector. The relative size of
the growth sector is controlled by the X-dimension of the seed
3.3
synthetic quartz crystal batch
synthetic quartz crystals grown at the same time in one autoclave
3.4
seed
rectangular parallelepiped quartz plate or bar to be used as a nucleus for crystal growth
3.5
growth zones
regions of a synthetic quartz crystal resulting from growth along different crystallographic
directions (see Figure 1)
3.6
orientation of a synthetic quartz crystal
orientation of its seed with respect to the orthogonal axes specified in 3.7
3.7
orthogonal axial system of a quartz crystal
3.7.1
axial system for quartz illustrated in Figure 2
NOTE The Z-cut seed may be oriented at an angle of less than 20° to the Y-axis, in this case the axial system
becomes X, Yc, Zc.
3.7.2
AT-cut plate
rotated Y-cut crystal plate oriented at an angle of about +35° around the X-axis or about -3° from
the z (minor rhombohedral)-face as shown in Figure 3
3.7.3
z (minor rhombohedral)-cut plate
crystal plate parallel to the z (minor rhombohedral)-face as shown in Figure 3a
3.7.4
X-cut plate
crystal plate perpendicular to the X-axis as shown in Figure 3b
3.7.5
Y-cut plate
crystal plate perpendicular to the Y-axis as shown in Figure 3b
3.7.6
Z-cut plate
crystal plate perpendicular to the Z-axis as shown in Figure 3b
3.8
dimensions
dimensions pertaining to growth on Z-cut seed rotated less than 20° from the Y-axis
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– 8 – 60758 � IEC:2004(E)
3.8.1
gross dimensions
maximum dimensions along the X-, Y-, or Y�-, and Z- or Z�-axes measured along the X-, Y�- and
Z�-axes
3.8.1.1
effective Z-dimension
°
as-grown effective Z dimension defined as the minimum measure in the Z (� = 0 ) or Z� direction
in usable Y or Y� area of an as-grown crystal and described by Z ,as shown in Figure 1
eff
3.8.1.2
minimum Z-dimension
minimum distance from seed surface to Z-surface described by Z as shown in Figure 1d
min
3.8.2
dimensions pertaining to growth on a Z-cut seed rotated more than 20° from the X-axis
(under consideration)
3.9
inclusions
any foreign material within a synthetic quartz crystal, visible by examination of scattered light
from a bright source with the crystal immersed in a refractive index-matching liquid.
A particularly common inclusion is the mineral acmite (sodium iron silicate)
3.9.1
seed veil
array of inclusions or voids at the surface of the seed upon which a crystal has been grown
3.9.2
etch channel
roughly cylindrical void that is present along dislocation line after etching a quartz crystal
3.10
dopant
any additive used in the growth process which may change the crystal habit, chemical
composition, physical or electrical properties of the synthetic quartz batch
3.11
pre-dimensioned bar
any bar whose as-grown dimensions have been altered by sawing, grinding, lapping, etc.,
to meet a particular dimensional requirement
3.12
impurity concentration
concentration of impurities relative to silicon atoms
3.13
dislocations
linear defects in the crystal due to misplaced planes of atoms
3.14
etch channel
roughly cylindrical void present along a dislocation line after etching a test wafer prepared from
a quartz crystal
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60758 � IEC:2004(E) – 9 –
3.15
autoclave
vessel for the high-pressure high-temperature condition required for growth of synthetic quartz
crystal
3.16
right-handed quartz or left-handed quartz
handedness of quartz crystal as determined by observing the sense of handedness of the optical
rotation in the polarized light. Right-handed quartz is the crystal of dextrorotatory and
left-handed quartz is the crystal of levorotary
3.17
twins
twins follow laws of crystallography relating symmetrically to specific faces or axes.
The following types have been identified in synthetic quartz crystals:
a) Electrical twins
Quartz crystal in which regions with the common Z-axis exist showing a polarity reversal of
the electrical X-axis.
b) Optical twins
Quartz crystal in which regions with the common Z-axis exhibit handedness reversal of the
optical Z-axis
3.18
infrared absorption coefficient �-value
coefficient (referred to as the �-value) established by determining the relationship between
absorption of two wavelengths: one with minimal absorption due to OH impurity, the other with
high absorption due to presence of OH impurities in the crystal lattice. The OH impurity creates
mechanical loss in resonators and its presence is correlated to the presence of other
loss-inducting impurities. The �-value is a measure of OH concentration and is correlated with
expected mechanical losses due to material impurities. The infrared absorption coefficient
�-value is determined using the following equation:
1 T
1
� = log
t T
2
where
� is the infrared absorption coefficient;
t is the thickness of Y-cut sample, in centimetres;
–1 –1
T is the per cent transmission at a wave number of 3 800 cm or 3 979 cm ;
1
–1 –1 –1
T is the per cent transmission at a wave number of 3 410 cm , 3 500 cm or 3 585 cm .
2
3.19
lumbered synthetic quartz crystal
synthetic quartz crystal whose X- and Z- or Z�- surfaces in the as-grown condition have been
processed flat and parallel by sawing, grinding, lapping, etc., to meet specified dimensions and
orientation
3.19.1
lumbered Y-bar
quartz bars which are lumbered from an as-grown Y-bar
3.19.2
lumbered Z-bar
quartz bars which are lumbered from an as-grown Z-bar
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– 10 – 60758 � IEC:2004(E)
3.20
reference surface
surface of the lumbered bar prepared to specific flatness and orientation with respect to a
crystallographic direction (typically the X-direction)
4 Specification for as-grown synthetic quartz crystal
4.1 Standard values
4.1.1 Orientation of the seed
Standard orientation for the seeds are Z-cuts and rotated X-cuts, minor rhombohedral
(z-minor) cut, 1°30� rotated Z-cut, 2° rotated Z-cut, 5° rotated Z-cut, and 8°30� rotated Z-cut, the
Z�-axis of the latter three seeds being rotated as shown in Figure 2.
4.1.2 Inclusion density
The inclusion density (measured as in 4.2.5.3) for each grade shall not exceed the figures in any
required size range for that grade listed in Table 1.
Table 1 – Inclusion densities for the grades
3
Grade/size Densities per cm
range
10-30 30-70 70-100 >100
Pm
Ia 2 1 0 0
Ib 3 2 1 1
I 6 4 2 2
II 9 5 4 3
III 12 8 6 4
Users requiring a grade in only one or more of the size ranges may designate their requirement
as the grade followed by the appropriate size range.
4.1.3 Infra-red quality indications, � , � , �
3500 3585 3410
An infra-red extinction coefficient value (�-value) of synthetic quartz (measured as in 4.2.6)
shall be as listed under the appropriate heading for � , � , or � in Table 2 for the
3500 3585 3410
various grades:
Table 2 – Infra-red quality indications for the grades
a
Grades Maxima Pre-1987
6D D D Q 10 units
3500 3585 3410
Aa 0,026 0,015 0,075 3,8
A 0,033 0,024 0,082 3,0
B
0,045 0,050 0,100 2,4
C 0,060 0,069 0,114 1,8
D 0,080 0,100 0,145 1,4
E 0,120 0,160 0,190 1,0
a
These Q-values were obtained from D-measurements and empirical
correlation, and were in common usage prior to 1987. These are included
here as the previous labels to maintain continuity through the change in
emphasizing D-labels. D is the physical meaurement now used to control and
specify quality in sythetic quartz.
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60758 � IEC:2004(E) – 11 –
The test limits above either correspond to or are unchanged (except in the cases of grades B and
D) from the � limits that correspond to the Q-value grades listed in the first edition of
3500
IEC 60758. This earlier publication designated some of the same grades in terms of minimum
6
indicated Q's in 10 units, as follows:
A = 3,0;
B = 2,2 (basis used herein), changed from 2,4 in the earlier edition;
C = 1,8;
D = 1,4 (revised);
E = 1,0 (the same as the earlier D-grade).
4.1.4 Frequency-versus-temperature characteristics (Figure 4 and 4.2.7)
The frequency-versus-temperature characteristics of synthetic quartz crystal units shall be
assessed by determination of the fractional frequency deviation measured at 15 �C and 35 �C
with respect to the series resonance frequency at 25 �C. The fractional deviation shall satisfy the
following:
–6
– fractional frequency deviation at 15 °C: +0,5 to +1,5 � 10 ;
–6
– fractional frequency deviation at 35 °C: –0,5 to –1,5 � 10 .
Measurement shall be made in accordance with 4.7.3 of IEC 60122-1.
4.1.5 Etch channel density
2
When required, �������������������������� ����� cm (measured as in 4.2.8) for each grade, shall
comply with the listings in Table 3.
Table 3 – Etch channel densities for the grades
2
Grade Maximum number U per cm
1 10
2 30
3 100
4 300
5 600
4.2 Requirements and measuring methods
4.2.1 Orientation
The orientation of the seed shall be along specified directions, with a deviation of less than
30 min from nominal.
4.2.2 Handedness
The handedness of the seed shall be specified, either right-hand or left-hand (see Figure 2).
4.2.3 Synthetic quartz crystal dimensions
The dimension shall be measured by calipers or point calipers which enable the hollow point of
a synthetic quartz crystal to be measured (see Annex D).
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– 12 – 60758 � IEC:2004(E)
4.2.3.1 Dimension along Y or Y�-axis
The dimension shall be as specified (see Figure 1d).
4.2.3.2 Dimension along Z or Z�-axis dimension shall be measured by a neck ipers
The dimension along the Z or Z�-axis shall be specified as the maximum dimension along the
Z or Z�-axis in the greater X zone (see Figure 1c).
4.2.3.3 Dimension Z or Z�
eff eff
The Z or Z� dimension shall be specified as the minimum dimension along the Z or Z�-axis
eff eff
(see Figure 1c).
4.2.3.4 Dimension Z or Z�
min min
The dimension shall be as specified (see Figures 1c and 1d).
4.2.3.5 Dimension along X-axis
The gross dimension along the X-axis shall be as specified (see Figure 1c).
4.2.4 Seed dimensions
4.2.4.1 Z or Z�-dimension
The Z or Z�-dimension (i.e. thickness) of the Z-cut or rotated Z-cut seed shall be less than 3 mm,
unless otherwise specified.
4.2.4.2 X-dimension
The dimension X of the seed shall be as specified.
4.2.5 Imperfections
4.2.5.1 Twinning
There shall be no electrical or optical twinning
...
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