IEC 60747-15:2024
(Main)Semiconductor devices - Part 15: Discrete devices - Isolated power semiconductor devices
Semiconductor devices - Part 15: Discrete devices - Isolated power semiconductor devices
IEC 60747-15:2024 gives the requirements for isolated power semiconductor devices. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices and parts of IEC 60748 for ICs. This third edition includes the following significant technical changes with respect to the previous edition:
a) The intelligent power semiconductor modules (IPM), which was previously excluded from the first and second edition, is now included in this document (Annex C);
b) The thermal resistance is described for each switch (6.2.4);
c) Added isolation test between temperature sensor and terminals, in case there is an agreement with the user (6.1.2).
Dispositifs à semiconducteurs - Partie 15: Dispositifs discrets - Dispositifs de puissance à semiconducteurs isolés
IEC 60747-15:2024 est disponible sous forme de IEC 60747-15:2024 RLV qui contient la Norme internationale et sa version Redline, illustrant les modifications du contenu technique depuis l'édition précédente.
L'IEC 60747-15:2024 spécifie les exigences relatives aux dispositifs de puissance à semiconducteurs isolés. Ces exigences s’ajoutent à celles qui figurent dans d’autres parties de l’IEC 60747 pour les dispositifs de puissance non isolés correspondants et dans des parties de l’IEC 60748 pour les circuits intégrés. Cette troisième édition inclut les modifications techniques majeures suivantes par rapport à l’édition précédente:
a) les modules de puissance à semiconducteurs intelligents (IPM, Intelligent Power semiconductor Module), qui étaient auparavant exclus des première et deuxième éditions, sont désormais inclus dans le présent document (Annexe C);
b) la résistance thermique est décrite pour chaque interrupteur (6.2.4);
c) ajout d’un essai d’isolement entre le capteur de température et les bornes, en cas d’accord avec l’utilisateur (6.1.2).
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Standards Content (Sample)
IEC 60747-15 ®
Edition 3.0 2024-10
REDLINE VERSION
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Discrete devices
Part 15: Discrete devices – Isolated power semiconductor devices
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IEC 60747-15 ®
Edition 3.0 2024-10
REDLINE VERSION
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Discrete devices
Part 15: Discrete devices – Isolated power semiconductor devices
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8322-9946-3
– 2 – IEC 60747-15:2024 RLV © IEC 2024
CONTENTS
FOREWORD . 5
1 Scope . 7
2 Normative references. 7
3 Terms and definitions . 8
4 Letter symbols . 9
4.1 General . 9
4.2 Additional subscripts/symbols . 9
4.3 List of letter symbols . 9
4.3.1 Voltages and currents . 9
4.3.2 Mechanical symbols . 10
4.3.3 Other symbols . 10
5 Essential ratings (limiting values) and characteristics . 10
5.1 General . 10
5.2 Ratings (limiting values) . 10
5.2.1 Isolation voltage or isolation test voltage (V ) . 10
isol
5.2.2 Peak case non-rupture current (I or I ) (where appropriate) . 10
RSMC CNR
5.2.3 Terminal current (I ) (where appropriate) . 11
tRMS
5.2.4 Total power dissipation (P ) .
tot
5.2.4 Temperatures . 11
5.2.5 Mechanical ratings . 11
5.2.6 Climatic ratings (where appropriate) . 12
5.3 Characteristics . 12
5.3.1 Mechanical characteristics . 12
5.3.2 Parasitic inductance (L ) . 12
p
5.3.3 Parasitic capacitances (C ) . 12
p
5.3.4 Partial discharge inception voltage (V or V ) (where
iM i(RMS)
appropriate) . 13
5.3.5 Partial discharge extinction voltage (V or V ) (where
eM e(RMS)
appropriate) . 13
5.3.6 Thermal resistances . 13
5.3.7 Transient thermal impedance (Z ) . 13
th
6 Measurement methods . 14
6.1 Verification of isolation voltage rating . 14
6.1.1 Verification of isolation voltage rating between terminals and base plate
(V ) . 14
isol
6.1.2 Verification of isolation voltage rating between temperature sensor and
terminals (V ) . 15
isol1
6.2 Methods of measurement . 16
6.2.1 Partial discharge inception and extinction voltages (V ) (V ) . 16
i e
6.2.2 Parasitic inductance (L ) . 16
p
6.2.3 Parasitic capacitance terminal to case (C ) . 18
p
6.2.4 Thermal characteristics . 19
7 Acceptance and reliability . 23
7.1 General requirements . 23
7.2 List of endurance tests . 23
7.3 Acceptance defining criteria . 24
7.4 Type tests and routine tests . 24
7.4.1 Type tests . 24
7.4.2 Routine tests. 25
Annex A (informative) Test method of peak case non-rupture current . 26
A.1 Purpose . 26
A.2 Circuit diagram . 26
A.3 Test procedure . 29
A.4 Post test measurements and criteria . 29
A.5 Specified conditions . 29
Annex B (informative) Measuring method of the thickness of thermal compound paste . 31
B.1 General . 31
B.2 Measuring method . 31
Annex C (informative) Intelligent power semiconductor modules (IPMs) . 32
C.1 General . 32
C.2 Control terminals of IPM . 32
C.3 Essential ratings (limiting value) and characteristics . 33
C.3.1 General . 33
C.3.2 Ratings (limiting value) and testing method . 33
C.3.3 Characteristics and measuring method . 38
Bibliography . 61
Figure 1 – Basic circuit diagram for isolation breakdown withstand voltage test ("high
pot test") with V . 14
isol
Figure 2 – Basic circuit diagram for isolation voltage test between temperature sensor
and terminals (V ) . 15
isol1
Figure 3 – Circuit diagram for measurement of parasitic inductances (L ) . 17
p
Figure 4 – Wave forms . 18
Figure 5 – Circuit diagram for measurement of parasitic capacitance (C ) . 19
p
Figure 6 – Cross-section of an isolated power device with reference points for
temperature measurement of T and T . 20
c s
Figure A.1 – Circuit diagram for test of peak case non-rupture current . 28
Figure B.1 – Example of a measuring gauge for a layer of thermal compound paste of
a thickness between 5 µm and 150 µm . 31
Figure C.1 – Example of internal circuit configuration block diagram of IPM . 32
Figure C.2 – Testing circuit for supply voltage, input voltage / input signal voltage, and
fault output voltage / alarm signal voltage . 34
Figure C.3 – Testing circuit for fault output current / alarm signal current . 35
Figure C.4 – Testing circuit for main circuit DC bus voltage at short circuit . 37
Figure C.5 – Waveforms of short circuit protection function . 38
Figure C.6 – Measurement circuit for switching times and switching energy at inductive
load (lower arm device measurement) . 39
Figure C.7 – Switching waveforms at inductive load . 40
Figure C.8 – Measurement circuit for control circuit current . 43
Figure C.9 – Measurement circuit for input threshold voltage . 44
– 4 – IEC 60747-15:2024 RLV © IEC 2024
Figure C.10 – Measuring circuit for over current protection level/short circuit trip level . 46
Figure C.11 – Waveforms during over current protection / short circuit protection . 47
Figure C.12 – Measurement circuit for over current protection delay time/Short circuit
current delay time . 49
Figure C.13 – Waveforms of protection delay time during over current protection / short
circuit protection . 50
Figure C.14 – Measurement circuit for over temperature protection and its hysteresis . 52
Figure C.15 – Waveforms during the overheating protection operation and the fault
output . 54
Figure C.16 – Waveforms during the under-voltage protection operation and the fault
output . 55
Figure C.17 – Measurement circuit for fault output current . 56
Figure C
...
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