WG 3 - TC 47/SC 47E/WG 3

IEC 60747-6:2025 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics (properties), measuring and test methods, requirements for type tests, routine tests, endurance tests and marking for the following discrete semiconductor devices:
- reverse blocking triode thyristors;
- reverse conducting (triode) thyristors;
- bidirectional triode thyristors (triacs);
- turn-off thyristors.
If no ambiguity is likely to result, any of the above will be referred to as thyristors.
This edition includes the following significant technical changes with respect to the previous edition:
a) the terms and definitions for partial thermal resistance junction-to-case and voltages related to ratings and characteristics (properties) have been added;
b) Clauses 3, 4, 5, 6 and 7 were amended with some deletions of information no longer in use and with some necessary additions.

IEC 60747-2:2025 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics (properties), measuring and test methods, requirements for type tests, routine tests, endurance tests and marking for the following discrete semiconductor devices:
- generic rectifier diodes;
- avalanche rectifier diodes;
- fast-switching rectifier diodes;
- Schottky barrier diodes.
If no ambiguity is likely to result, any of the above will be referred to as diodes.
This edition includes the following significant technical changes with respect to the previous edition:
a) the terms and definitions for partial thermal resistance junction-to-case have been added;
b) Clauses 3, 4, 5, 6 and 7 have been amended with some deletions of information no longer in use and with some necessary additions.

IEC 60747-15:2024 gives the requirements for isolated power semiconductor devices. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices and parts of IEC 60748 for ICs. This third edition includes the following significant technical changes with respect to the previous edition:
a) The intelligent power semiconductor modules (IPM), which was previously excluded from the first and second edition, is now included in this document (Annex C);
b) The thermal resistance is described for each switch (6.2.4);
c) Added isolation test between temperature sensor and terminals, in case there is an agreement with the user (6.1.2).

IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:  
reverse-blocking IGBT and its related technical contents have been added;
reverse-conducting IGBT and its related technical contents have been added;
some parts of the previous edition have been amended, combined or deleted.

IEC 60747-6:2016 provides standards for the following types of discrete semiconductor devices:
- reverse-blocking triode thyristors;
- reverse-conducting (triode) thyristors;
- bidirectional triodethyristors (triacs);
- turn-off thyristors.
This edition includes the following significant technical changes with respect to the previous edition:
a) Clauses 3, 4, 5, 6, and 7 were amended with some deletions of information no longer in use or already included in other parts of the IEC 60747 series, and with some necessary additions;
b) some parts of Clause 8 and Clause 9 were moved and added to Clause 7 of this third edition;
c) Clause 8 and 9 were deleted in this third edition;
d) Annex A was deleted.
This publication is to be read in conjunction with IEC 60747-1:2006.

IEC 60747-2:2016 provides standards for the following categories or sub-categories of rectifier diodes, including:
- line rectifier diodes;
- avalanche rectifier diodes;
- fast-switching rectifier diodes;
- Schottky barrier diodes.
This edition includes the following significant technical changes with respect to the previous edition:
a) Schottky barrier diodes and its properties are added;
b) Clauses 3, 4, 5 and 7 were amended with some deletions of information no longer in use or already included in other parts of the IEC 60747 series, and with some necessary additions;
c) Clause 6 was moved and added to Clause 7 of this third edition;
d) some parts of Clause 7 were moved and added to Clause 7 of this third edition;
e) Annex A was deleted.
This publication is to be read in conjunction with IEC 60747-1:2006.

IEC 60747-3:2013 gives the requirements for the following devices:
- signal diodes (excluding diodes designed to operate at frequencies above several hundred MHz);
- switching diodes (excluding high power rectifier diodes);
- voltage-regulator diodes; voltage-reference diodes;
- current-regulator diodes.
This edition includes the following significant technical changes with respect to the previous edition:
a) All clauses were re-edited to latest IEC publication format and style with all contents from previous publication.
b) All clauses have been amended by suitable additions and deletions.
This publication should be read in conjunction with IEC 60747-1:2006.

IEC 60747-15:2010 gives the requirements for isolated power semiconductor devices excluding devices with incorporated control circuits. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices. The main changes with respect to previous edition are listed below.
a) Clause 3, 4 and 5 were re-edited and some of them were combined to other sub clauses.
b) Clause 6, 7 were re-edited as a part of "Measuring methods" with amendment of suitable addition and deletion.
c) Clause 8 was amended by suitable addition and deletion.
d) Annex C, D and Bibliography were deleted.
This publication is to be read in conjunction with IEC 60747-1:2006.

IEC 60747-7:2010 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors.
- Small signal transistors (excluding switching and microwave applications);
- Linear power transistors (excluding switching, high-frequency, and microwave applications);
- High-frequency power transistors for amplifier and oscillator applications;
- Switching transistors for high speed switching and power switching applications;
- Resistor biased transistors. The main changes with respect to previous edition are listed below.
a) Clause 1 was amended by adding an item that should be included.
b) Clauses 3, 4, 5, 6 and 7 were amended by adding terms, definitions, suitable additions and deletions those should be included.
c) The text of the second edition was combined with that of IEC 60747-7-5.
This publication is to be read in conjunction with IEC 60747-1:2006.

This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.

IEC 60747-15:2003 gives the product specific standards, requirements and test methods for isolated power semiconductor devices. These requirements are added to those given in other parts of IEC 60747, IEC 60748 and IEC 60749 for the corresponding non-isolated power devices.

Gives standards for the following categories of field-effect transistors : -Type A: junction-gate type; -Type B: insulated-gate depletion type; -Type C: insulated-gate enhancement type.

Provides standards for the following categories of discrete semi-conductor devices: - (reverse-blocking) (triode) thyristors, - asymmetrical (reverse-blocking) (triode) thyristors, - reverse-conducting (triode) thyristors, - bidirectional triode thyristors (triacs), - gate turn-off thyristors (GTO thyristors).

Gives the requirements applicable to the following sub-categories of bipolar transistors: -low power signal transistors (excluding switching applications); -power transistors (excluding switching and high-frequency applications); -high-frequency power transistors for amplifier and oscillator applications; -switching transistors.

Gives standards for rectifier diodes such as avalanche, controlled avalanche or fast-switching rectifier diodes.

This part of IEC 60747 gives requirements for bipolar switching transistors used for power switching application above 1 A. NOTE: Requirements concerning bipolar transistors in general can be found in IEC 60747-7.

Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.