IEC 63068-2:2019

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

General Information

• Status: Published
• Publication Date: 29-Jan-2019
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: TC 47 - Semiconductor devices
• Drafting Committee: WG 5 - TC 47/WG 5
• Current Stage: PPUB - Publication issued
• Start Date: 19-Feb-2019
• Completion Date: 30-Jan-2019

Standards Content (Sample)

IEC 63068-2 ®
Edition 1.0 2019-01
INTERNATIONAL
STANDARD
Semiconductor devices – Non-destructive recognition criteria of defects in
silicon carbide homoepitaxial wafer for power devices –
Part 2: Test method for defects using optical inspection
All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form
or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from
either IEC or IEC's member National Committee in the country of the requester. If you have any questions about IEC
copyright or have an enquiry about obtaining additional rights to this publication, please contact the address below or
your local IEC member National Committee for further information.

IEC Central Office Tel.: [phone]
3, rue de Varembé [e-mail]
CH-1211 Geneva 20 www.iec.ch
Switzerland
About the IEC
The International Electrotechnical Commission (IEC) is the leading global organization that prepares and publishes
International Standards for all electrical, electronic and related technologies.

About IEC publications
The technical content of IEC publications is kept under constant review by the IEC. Please make sure that you have the
latest edition, a corrigendum or an amendment might have been published.

IEC publications search - webstore.iec.ch/advsearchform Electropedia - www.electropedia.org
The advanced search enables to find IEC publications by a The world's leading online dictionary on electrotechnology,
variety of criteria (reference number, text, technical containing more than 22 000 terminological entries in English
committee,…). It also gives information on projects, replaced and French, with equivalent terms in 16 additional languages.
and withdrawn publications. Also known as the International Electrotechnical Vocabulary

(IEV) online.
IEC Just Published - webstore.iec.ch/justpublished
Stay up to date on all new IEC publications. Just Published IEC Glossary - std.iec.ch/glossary
details all new publications released. Available online and 67 000 electrotechnical terminology entries in English and
once a month by email. French extracted from the Terms and Definitions clause of
IEC publications issued since 2002. Some entries have been
IEC Customer Service Centre - webstore.iec.ch/csc collected from earlier publications of IEC TC 37, 77, 86 and
If you wish to give us your feedback on this publication or CISPR.

need further assistance, please contact the Customer Service

Centre: [e-mail].
IEC 63068-2 ®
Edition 1.0 2019-01
INTERNATIONAL
STANDARD
Semiconductor devices – Non-destructive recognition criteria of defects in

silicon carbide homoepitaxial wafer for power devices –

Part 2: Test method for defects using optical inspection

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8322-6480-5

– 2 – IEC 63068-2:2019 © IEC 2019
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
4 Optical inspection method . 11
4.1 General . 11
4.2 Principle . 12
4.3 Requirements . 12
4.3.1 Illumination . 12
4.3.2 Wafer positioning and focusing . 13
4.3.3 Image capturing . 13
4.3.4 Image processing . 13
4.3.5 Image analysis . 13
4.3.6 Image evaluation . 13
4.3.7 Documentation . 13
4.4 Parameter settings . 14
4.4.1 General . 14
4.4.2 Parameter setting process . 14
4.5 Procedure . 14
4.6 Evaluation . 14
4.6.1 General . 14
4.6.2 Mean width of planar and volume defects . 14
4.6.3 Evaluation process . 15
4.7 Precision . 15
4.8 Test report . 15
Annex A (informative)  Optical inspection images of defects . 16
A.1 General . 16
A.2 Micropipe . 16
A.3 TSD . 17
A.4 TED . 17
A.5 BPD . 18
A.6 Scratch trace . 18
A.7 Stacking fault . 19
A.8 Propagated stacking fault . 19
A.9 Stacking fault complex . 20
A.10 Polytype inclusion . 21
A.11 Particle inclusion . 23
A.12 Bunched-step segment . 23
Bibliography . 25

Figure A.1 – Micropipe . 16
Figure A.2 – TSD . 17
Figure A.3 – TED . 18
Figure A.4 – Scratch trace . 18
Figure A.5 – Stacking fault . 19

Figure A.6 – Propagated stacking fault . 20
Figure A.7 – Stacking fault complex . 21
Figure A.8 – Polytype inclusion . 22
Figure A.9 – Particle inclusion . 23
Figure A.10 – Bunched-step segment . 24

– 4 – IEC 63068-2:2019 © IEC 2019
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
NON-DESTRUCTIVE RECOGNITION CRITERIA OF DEFECTS IN SILICON
CARBIDE HOMOEPITAXIAL WAFER FOR POWER DEVICES –

Part 2: Test method for defects using optical inspection

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 63068-2 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this International Standard is based on the following documents:
CDV Report on voting
47/2475/CDV 47/2522A/RVC
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

A list of all parts in the IEC 63068 series, published under the general title Semiconductor
devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer
for power devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
A bilingual version of this publication may be issued at a later date.

– 6 – IEC 63068-2:2019 © IEC 2019
INTRODUCTION
Silicon carbide (SiC) is widely used as a semiconductor material for next-generation power
semiconductor devices. SiC, as compared with
...