IEC 60747-16-11:2026

Semiconductor devices - Part 16-11: Microwave integrated circuits - Power detectors

IEC 60747-16-11:2026 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit power detectors.

General Information

• Status: Published
• Publication Date: 08-Apr-2026
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 2 - TC 47/SC 47E/WG 2
• Current Stage: PPUB - Publication issued
• Start Date: 09-Apr-2026
• Completion Date: 01-May-2026

Overview

IEC 60747-16-11:2026 is the international standard developed by the International Electrotechnical Commission (IEC) for microwave integrated circuit power detectors. This standard establishes unified terminology, essential performance ratings and characteristics, and standardized measuring methods for power detectors used in microwave integrated circuits. It enables global consistency in design, specification, evaluation, and application of semiconductor power detectors used in various microwave systems.

This part of the IEC 60747 series is crucial for manufacturers, designers, and engineers in the field of semiconductor devices, particularly where accurate measurement and conformance for microwave power detection are required. The standard provides a common foundation to ensure reliable product performance and interoperability in specialized applications such as satellite receivers, communication systems, and microwave instrumentation.

Key Topics

IEC 60747-16-11:2026 covers the following essential aspects for microwave integrated circuit power detectors:

• Terminology and Definitions
  Clear definitions for terms such as output voltage, tangential signal sensitivity, input return loss, voltage and current sensitivity, dynamic range, and response times.

• Essential Ratings and Characteristics
  Specification of limiting values, electrical ratings, and parameters including:

  • Bias voltages and currents
  • Control supply requirements
  • Input power and power dissipation
  • Temperature ratings (operating, storage, channel, and soldering)

• Functional and Performance Requirements
  Guidelines on:

  • Circuit identification, device categorization, and manufacturing technology
  • Package identification and details
  • Application conformance and system compatibility
  • Specifications for block diagrams and terminal functions

• Measuring Methods
  Standardized measurement methods for parameters such as:

  • Tangential signal sensitivity
  • Input return loss
  • Output voltage and current
  • Sensitivity to voltage, current, and temperature
  • Frequency response flatness
  • Rise and fall times, propagation delays
  • Output slope, intercept points, and dynamic range

• Mechanical and Environmental Ratings
  Requirements regarding package form, material, and operational reliability in varying environmental conditions.

• Quality Assessment and Additional Information
  Guidance on operating conditions, internal protection features, handling precautions, and connectivity to other circuit types.

Applications

Microwave integrated circuit power detectors compliant with IEC 60747-16-11:2026 play a vital role in a range of high-frequency electronics applications:

• Communication Systems:
  Used in very small aperture terminal (VSAT) systems, broadcasting satellite (BS) receivers, and microwave landing systems for accurate signal level measurement.

• Test and Measurement Equipment:
  Integration in power meters, spectrum analyzers, and other radio-frequency (RF) instrumentation.

• Automatic Gain Control Circuits (AGC):
  Power detectors are essential for maintaining signal integrity and system stability.

• Consumer and Industrial Electronics:
  Found in wireless communication devices, radar systems, and RF modules where precise power detection at microwave frequencies is necessary.

• Interfacing with Peripheral Devices:
  The standard ensures compatibility and simplifies design for circuits that require power detection as part of signal routing or level monitoring.

Related Standards

For a comprehensive understanding of microwave integrated circuit power detectors and their broader context within semiconductor devices, users should also reference:

• IEC 60747-1: Semiconductor devices - Part 1: General
  (Foundation standards for ratings, characteristics, and test conditions)

• IEC 60747-4: Semiconductor devices - Discrete devices - Microwave diodes and transistors
  (Related to technologies used in power detection)

• IEC 61340-5-1: Electrostatics - Protection of electronic devices from electrostatic phenomena

• IEC TR 61340-5-2: Electrostatics - User guide for protection of electronic devices

IEC 60747-16-11:2026 ensures consistency and reliability for power detectors in microwave integrated circuits, benefitting global markets that require standardized performance and measurement for advanced semiconductor components.

Standards Content (Sample)

IEC 60747-16-11 ®
Edition 1.0 2026-04
INTERNATIONAL
STANDARD
Semiconductor devices -
Part 16-11: Microwave integrated circuits - Power detectors
ICS 31.080.99  ISBN 978-2-8327-1178-1

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CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Essential ratings and characteristics . 8
4.1 General requirements. 8
4.1.1 Circuit identification and types . 8
4.1.2 General function description . 8
4.1.3 Manufacturing technology . 8
4.1.4 Package identification . 8
4.2 Application description . 9
4.2.1 Conformance to system or interface information or both . 9
4.2.2 Overall block diagram . 9
4.2.3 Reference data . 9
4.2.4 Electrical compatibility . 9
4.2.5 Associated devices . 9
4.3 Specification of the function . 9
4.3.1 Detailed block diagram – Functional blocks . 9
4.3.2 Identification and function of terminals . 10
4.3.3 Function description . 10
4.4 Limiting values (absolute maximum rating system) . 11
4.4.1 Requirements . 11
4.4.2 Electrical limiting values . 11
4.4.3 Temperatures . 12
4.5 Operating conditions (within the specified operating temperature range) . 12
4.6 Electrical characteristics . 12
4.7 Mechanical and environmental ratings, characteristics and data . 13
4.8 Additional information . 13
5 Measuring methods. 14
5.1 General . 14
5.1.1 General precautions . 14
5.1.2 Characteristic impedance. 14
5.1.3 Handling precautions . 14
5.1.4 Types . 14
5.2 Tangential signal sensitivity (P ) . 14
TSS
5.2.1 Purpose . 14
5.2.2 Circuit diagram . 14
5.2.3 Principle of measurement . 15
5.2.4 Circuit description and requirements . 16
5.2.5 Precautions to be observed . 16
5.2.6 Measurement procedure . 16
5.2.7 Specified conditions . 16
5.3 Input return loss (L ) . 17
ret(in)
5.3.1 Purpose . 17
5.3.2 Measuring methods . 17
5.4 Output voltage (V ) . 20
o
5.4.1 Purpose . 20
5.4.2 Circuit diagram . 20
5.4.3 Principle of measurement . 20
5.4.4 Circuit description and requirements . 21
5.4.5 Precautions to be observed . 21
5.4.6 Measurement procedure . 21
5.4.7 Specified conditions . 21
5.5 Voltage sensitivity (β ) . 21
v
5.5.1 Purpose . 21
5.5.2 Circuit diagram . 21
5.5.3 Principle of measurement . 21
5.5.4 Circuit description and requirements . 22
5.5.5 Precautions to be observed . 22
5.5.6 Measurement procedure . 22
5.5.7 Specified conditions . 22
5.6 Current sensitivity (β ) . 22
i
5.6.1 Purpose . 22
5.6.2 Circuit diagram . 22
5.6.3 Principle of measurement . 23
5.6.4 Circuit description and requirements . 23
5.6.5 Precautions to be observed . 23
5.6.6 Measurement procedure . 23
5.6.7 Specified conditions . 23
5.7 Frequency response flatness (∆P ) . 23
i
5.7.1 Purpose . 23
5.7.2 Circuit diagram . 23
5.7.3 Principle of measurement . 23
5.7.4 Circuit description and requirements . 24
5.7.5 Precautions to be observed . 24
5.7.6 Measurement procedure . 24
5.7.7 Specified conditions . 24
5.8 Output slope (k) . 24
5.8.1 Purpose . 24
5.8.2 Circuit diagram . 24
5.8.3 Measuring methods . 25
5.9 Output intercept point . 27
5.9.1 Purpose . 27
5.9.2 Circuit diagram . 27
5.9.3 Measuring methods . 27
5.10 Dynamic range . 29
5.10.1 Purpose . 29
5.10.2 Circuit diagram . 29
5.10.3 Measuring methods . 29
5.11 Temperature sensitivity (β ) . 32
T
5.11.1 Purpose . 32
5.11.2 Circuit diagram . 32
5.11.3 Principle of measurement . 32
5.11.4 Circuit description and requirements . 32
5.11.5 Precautions to be observed . 32
5.11.6 Measurement procedure . 33
5.11.7 Specified conditions . 33
5.12 Rise time (t ), fall time (t ), rising edge propagation delay (t ) and
r(out) f(out) rd
falling edge propagation delay (t ). 33
fd
5.12.1 Purpose . 33
5.12.2 Circuit diagram . 33
5.12.3 Principle of measurement . 34
5.12.4 Circuit description and requirements . 35
5.12.5 Precautions to be observed . 35
5.12.6 Measurement procedure . 35
5.12.7 Specified conditions . 35
Bibliography . 36

Figure 1 – Example block diagram. 10
Figure 2 – Circuit diagram for the measurement of tangential signal sensitivity . 15
Figure 3 – Waveform of output voltage relative to input power . 15
Figure 4 – Circuit diagram for the measurement of the input return loss (method 1) . 17
Figure 5 – Circuit diagram for the measurement of the input return loss (method 2) . 19
Figure 6 – Circuit diagram for the measurement of the output voltage . 20
Figure 7 – Circuit diagram for the measurement of current sensitivity . 22
Figure 8 – Circuit diagram for the measurement of response times . 33
Figure 9 – Input and output waveforms . 34

Table 1 – Function of terminals . 10
Table 2 – Electrical limiting values . 11
Table 3 – Electrical limiting values in detail specification . 12
Table 4 – Temperatures . 12
Table 5 – Electrical characteristics . 13

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
Semiconductor devices -
Part 16-11: Microwave integrated circuits -
Power detectors
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
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9) IEC draws attention to the possibility that the implementation of this document may involve the use of (a)
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the latest information, which may be obtained from the patent database available at https://patents.iec.ch and
www.iso.org/patents. IEC shall not be held responsible for identifying any or all such patent rights.
IEC 60747-16-11 has been prepared by subcommittee 47E: Discrete semiconductor devices,
of IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47E/887/FDIS 47E/891/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 60747 series, published under the general title Semiconductor
devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
– reconfirmed,
– withdrawn, or
– revised.
1 Scope
This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and
measuring methods of microwave integrated circuit power detectors.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60747-1:2006, Semiconductor devices - Part 1: General
IEC 60747-1:2006/AMD1:2010
IEC 60747-4:2007, Semiconductor devices - Discrete devices - Part 4: Microwave diodes and
transistors
IEC 60747-4:2007/AMD1:2017
IEC 61340-5-1, Electrostatics - Part 5-1: Protection of electronic devices from electrostatic
phenomena - General requirements
IEC TR 61340-5-2, Electrostatics - Part 5-2: Protection of electronic devices from electrostatic
phenomena - User guide
3 Terms and definitions
For the purposes of this document, the terms and definitions given in IEC 60747-4 and the
following apply.
ISO and IEC maintain terminology databases for use in standardization at the following
addresses:
– IEC Electropedia: available at https://www.electropedia.org/
– ISO Online browsing platform: available at https://www.iso.org/obp
3.1
output voltage
V
o
voltage measured at the output port
3.2
tangential signal sensitivity
P
TSS
input power when the negative noise peak value of the output voltage (3.1) is equal to the
positive noise peak value when there is no input signal
3.3
input return loss
L
ret(in)
ratio of the incident power at the input port to the reflected power at the input port
[SOURCE: IEC 60747-16-6:2019, 3.4]
3.4
output current
I
o
current measured at the output port
3.5
voltage sensitivity
β
V
ratio of the output voltage (3.1) to the input power
3.6
current sensitivity
β
i
ratio of the output current (3.4) to the input power
3.7
frequency response flatness
∆P
i
difference between the maximum input power and the minimum input power at the same output
voltage (3.1)
3.8
output slope
k
slope of the output voltage (3.1) ideal response curve
3.9
output intercept point
intersection point of the extension line of the output voltage (3.1) ideal response curve and the
horizontal axis which represents input power or input peak voltage
3.10
dynamic range
input power range in which the actual response curve follows the ideal response curve
3.11
temperature sensitivity
β
T
rate at which calculated input power varies with temperature at the same actual input power
3.12
rise time
t
r(out)
interval between the lower reference point on the leading edge of the output voltage (3.1) and
the upper reference point on the leading edge of the output voltage (3.1)
Note 1 to entry: Usually the lower reference is 10 % of the amplitude, and the upper reference is 90 % of the
amplitude.
3.13
fall time
t
f(out)
interval between the upper reference point on the trailing edge of the output voltage (3.1) and
the lower reference point on the trailing edge of the output voltage (3.1)
Note 1 to entry: Usually the lower reference is 10 % of the amplitude, and the upper reference is 90 % of the
amplitude.
3.14
rising edge propagation delay
t
rd
interval between the reference point on the leading edge of the envelope of the radio frequency
input voltage and the reference point on the leading edge of the output voltage (3.1)
Note 1 to entry: Usually the reference is 50 % of the amplitude.
3.15
falling edge propagation delay
t
fd
interval between the reference point on the trailing edge of the envelope of the radio frequency
input voltage and the reference point on the trailing edge of the output voltage (3.1)
Note 1 to entry: Usually the reference is 50 % of the amplitude.
4 Essential ratings and characteristics
4.1 General requirements
4.1.1 Circuit identification and types
The identification of type (device name), the category of circuit and technology applied shall be
given in the detail specification.
Microwave power detectors comprise four categories:
– Type A: Detector diodes;
– Type B: Root mean square detectors;
– Type C: Logarithmic detectors;
– Type D: Envelope detectors and peak detectors.
4.1.2 General function description
A general description of the function performed by the microwave integrated circuit power
detectors and the features for the application shall be made.
4.1.3 Manufacturing technology
The manufacturing technology, e.g. semiconductor monolithic integrated circuit, thin film
integrated circuit, micro-assembly, shall be stated in the detail specification. This statement
shall include details of the semiconductor technologies such as Schottky-barrier diode, metal-
semiconductor field effect transistor (MESFET), Si bipolar transistor, etc.
4.1.4 Package identification
The following information shall be given in the detail specification:
a) chip or packaged form;
b) IEC or national reference number or both of the outline drawing, or drawing of non-standard
package including terminal numbering;
c) principal package material, for example, metal, ceramic, plastic.
4.2 Application description
4.2.1 Conformance to system or interface information or both
It should be stated in the detail specification whether the integrated circuit conforms to an
application system or an interface standard or both, or a recommendation.
Detailed information concerning application systems, equipment and circuits such as very small
aperture terminal (VSAT) systems, broadcasting satellite (BS) receivers, microwave landing
systems, etc., should also be given.
4.2.2 Overall block diagram
A block diagram of the applied systems should be given in the detail specification, if necessary.
4.2.3 Reference data
The most important properties that permit comparison between derivative types should be given
in the detail specification.
4.2.4 Electrical compatibility
It should be stated in the detail specification whether the integrated circuit is electrically
compatible with other particular integrated circuits, or families of integrated circuits, or whether
special interfaces are required.
Details should be given concerning the type of input and output circuits, e.g. input and output
impedances, DC block, open-drain, etc. Interchangeability with other devices, if any, should
also be given.
4.2.5 Associated devices
If applicable, the following should be stated:
– devices necessary for correct operation (list with type number, name and function);
– peripheral devices with direct interfacing (list with type number, name and function).
4.3 Specification of the function
4.3.1 Detailed block diagram – Functional blocks
A detail block diagram or equivalent circuit information of the integrated circuit microwave power
detectors shall be given in the detail specification. The block diagram shall be composed of the
following:
a) functional blocks;
b) mutual interconnections among the functional blocks;
c) individual functional units within the functional blocks;
d) mutual interconnections among the individual functional blocks;
e) function of each external connection;
f) inter-dependence between the separate functional blocks.
The block diagram shall identify the function of each external connection and, where no
ambiguity can arise, also show the terminal symbols or numbers or both. If the encapsulation
has metallic parts, any connection to them from external terminals shall be indicated. The
connections with any associated external electrical elements shall be stated, where necessary.
As additional information, the complete electrical circuit diagram can be reproduced, but not
necessarily with indications of the values of the circuit components. The graphical symbol for
the function shall be given. Rules governing such diagrams can be obtained from IEC 60617.
4.3.2 Identification and function of terminals
All terminals shall be identified on the block diagram (supply terminals, input or output terminals,
bidirectional terminals), as shown in Figure 1.

Figure 1 – Example block diagram
The terminal functions shall be indicated in Table 1.
If the baseplate of the package is used as a ground terminal, the type of ground, e.g. analogue
ground, digital ground, shall be stated in the column of Function in Table 1.
4.3.3 Function description
The function performed by the circuit shall be specified, including the following information:
– basic function;
– relation to external terminals;
– operation mode (set-up method, preference, etc.);
– interruption handling.
Table 1 – Function of terminals
b
Terminal Terminal Terminal Function of terminal
Function
a
number symbol
designation
c
Type of input and
Identification
d
output circuits
a
A terminal designation to indicate the function of the terminal shall be given. Supply terminals, ground terminals,
blank terminals (with abbreviation NC), non-usable terminals (with abbreviation NU) shall be distinguished.
b
A brief indication of the terminal function shall be given:
– each function of multi-role terminals, i.e. terminals having multiple functions;
– each function of integrated circuit selected by mutual pin connections, programming or application or both of
function selection data to the function selection pin, such as mode selection pin.
c
Input, output, bidirectional and multiplex output terminals shall be distinguished.
d
The type of input and output circuit, e.g. input and output impedances, with or without DC block, etc., shall be
distinguished.
4.4 Limiting values (absolute maximum rating system)
4.4.1 Requirements
These limiting values shall contain the following and be given in the detail specification:
– any interdependence of limiting conditions shall be specified;
– if externally connected or attached elements or both, for example heatsinks, have an
influence on the values of the ratings, the ratings shall be specified for the integrated circuit
with the elements connected or attached or both;
– if limiting values are exceeded for transient overload, the permissible excess and their
durations shall be specified;
– where minimum and maximum values differ during programming of the device, this shall be
stated;
– all voltages are referenced to a specified reference terminal (U , ground, etc.);
SS
– if maximum or minimum or both values are quoted, the manufacturer shall indicate whether
these are referring to the absolute magnitude or to the algebraic value of the quantity;
– the ratings given shall cover the operation of the multi-function integrated circuit over the
specified range of operating temperatures. Where such ratings are temperature-dependent,
this dependence shall be indicated.
4.4.2 Electrical limiting values
Electrical limiting values shall be specified as shown in Table 2.
Table 2 – Electrical limiting values
Parameters Min. Max.
Bias voltage(s) (where appropriate) + +
Bias current(s) (where appropriate) +
Control supply voltage(s) (where appropriate) + +
Control supply current(s) (where appropriate) +
Terminal voltage(s) (where appropriate) + +
Terminal current(s) (where appropriate) +
Input power +
Power dissipation +
Either bias voltage(s) or bias current(s), either terminal voltage(s) or terminal current(s) shall be selected.

The detail specification may indicate those values within Table 3.
Table 3 – Electrical limiting values in detail specification
a, b
Symbols Min. Max. Unit
Parameters
a
Where appropriate, in accordance with the type of circuit considered.
b
For power supply voltage range:
– limiting value(s) of the continuous voltage(s) at the supply terminal(s) with respect to a special electrical
reference point;
– where appropriate, limiting value between specified supply terminals;
– when more than one voltage supply is required, a statement shall be made in the detail specification as to
whether the sequence in which these supplies are applied is significant: if so, the sequence shall be stated
in the detail specification;
– when more than one supply is needed, the combinations of ratings shall be stated for these supply voltages
and currents.
4.4.3 Temperatures
The detail specification may indicate the following temperature values within Table 4:
a) operating temperature (ambient or reference-point temperature);
b) storage temperature;
c) channel temperature;
d) lead temperature (for soldering).
Table 4 – Temperatures
a
Symbols Min. Max. Unit
Parameters
a
Where appropriate, in accordance with the type of circuit considered.

4.5 Operating conditions (within the specified operating temperature range)
It is not required that operating conditions be inspected but may be used for quality assessment
purpose:
a) power supplies – positive or negative or bipolar values (where appropriate);
b) initialization sequences (where appropriate), if special initialization sequences are
necessary, power supply sequencing and initialization procedure shall be specified;
c) input voltage(s) (where appropriate);
d) output current(s) (where appropriate);
e) voltage or current or both of other terminal(s);
f) external elements (where appropriate);
g) operating temperature range.
4.6 Electrical characteristics
The characteristics shall apply over the full operating temperature range, unless otherwise
specified in the detail specification. Each characteristic shall be stated in the detail specification,
either
a) over the specified range of operating temperatures, or
b) at a temperature of 25 °C, and at maximum and minimum operating temperatures.
The parameters should be specified corresponding to the type as shown in Table 5.
Table 5 – Electrical characteristics
Parameters Min. Typ. Max. Types
A B C D
Bias supply operating current (where appropriate) + + + + + +
Control supply operating current (where appropriate) + + + + +
Tangential signal sensitivity (P )  + + + + +
TSS
Input return loss (L ) + + + + + +
ret(in)
Output voltage (V ) + + + + + + +
o
Voltage sensitivity (β ) + + + + + +
v
Current sensitivity (β ) + + +  +
i
Frequency response flatness (∆P ) + + + + + +
i
Output slope (k) +  + + +
Output intercept point + + + + + +
Dynamic range + + + + +
Temperature sensitivity (β )  + + + +
T
Rise time(t ) + + + + +
r(out)
Fall time(t ) + + + + +
f(out)
Rising edge propagation delay(t ) + + + + +
rd
Falling edge propagation delay(t ) + + + + +
fd
4.7 Mechanical and environmental ratings, characteristics and data
Any applicable mechanical and environmental ratings, characteristics and data specified in 5.10
and 5.11 of IEC 60747-1:2006 shall be stated in the detail specification.
4.8 Additional information
Where appropriate, the following information shall be given in the detail specification:
a) equivalent input and output circuit: Detail information shall be given regarding the type of
input and output circuits, e.g. input and output impedances, DC block, open-drain, etc.;
b) internal protection: A statement shall be given to indicate whether the integrated circuit
contains internal protection against high static voltages or electrical fields;
c) capacitors at terminals: If capacitors for the DC block are needed, these capacitances shall
be stated;
d) thermal resistance;
e) interconnections to other types of circuit: Where appropriate, details of the interconnections
to other circuits shall be given, for example, detector circuits for automatic gain control
(AGC), sense amplifiers, buffers, etc.;
f) effects of externally connected component(s): Curves or data indicating the effect of
externally connected component(s) that influence the characteristics may be given;
g) recommendations for any associated device(s): For example, decoupling of power supply
to a high-frequency device shall be stated;
h) handling precautions: Where appropriate, handling precautions specific to the circuit shall
be stated (see also IEC 61340-5-1 and IEC TR 61340-5-2);
i) application data;
j) other application information;
k) date of issue of the data sheet.
5 Measuring methods
5.1 General
5.1.1 General precautions
The general precautions listed in 6.3, 6.4 and 6.6 of IEC 60747-1:2006 shall be applied. In
addition, low-ripple DC power supplies shall be used and all supply terminals shall be decoupled
at the frequency of measurement. Although the level of the signal can be specified in either
power or voltage, in this document it is expressed in power unless otherwise specified. Correct
calibration shall be performed to the measurement fixture, and calibration method should be
described.
5.1.2 Characteristic impedance
The characteristic impedance of the measurement system, shown in the circuit in this document,
is 50 Ω. If it is not 50 Ω, it shall be specified.
5.1.3 Handling precautions
When handling electrostatic-sensitive devices, the handling precautions given in IEC 61340-5-
1 shall be observed and IEC TR 61340-5-2 should be observed.
5.1.4 Types
The devices in this document are both packaged and chip types, measured using suitable test
fixtures.
5.2 Tangential signal sensitivity (P )
TSS
5.2.1 Purpose
To measure the tangential signal sensitivity under specified conditions.
5.2.2 Circuit diagram
The measuring circuit is shown in Figure 2.
Figure 2 – Circuit diagram for the measurement of tangential signal sensitivity
5.2.3 Principle of measurement
The waveform of output voltage relative to input power is illustrated in Figure 3 when the input
power is equal to the tangential signal sensitivity.

Key
P P
input power tangential signal sensitivity
i TSS
V V
noise peak voltage the minimum detectable output voltage
np L
Figure 3 – Waveform of output voltage relative to input power
When a square-wave signal or a radio frequency (RF) pulse rectangular wave signal is injected
into power detector, adjust the input signal power so that the lower edge of the output voltage
is tangent to the noise peak voltage as shown in Figure 3. The output voltage at this situation
is the minimum detectable output voltage of the power detector. Using the input power at this
situation, the tangential signal sensitivity is calculated by Formula (1) for the input power
calculation:
P = P − L
(1)
i 1 1
where
P is the value indicated by the power meter 1;
L is the power at the point A, less the power at the point B;
P and P are expressed in dBm, L is expressed in dB.
1 i 1
5.2.4 Circuit description and requirements
The purpose of the isolator is to maintain a constant input power level to the device being
measured, irrespective of impedance mismatched at its input.
The oscilloscope shall be in high resistance mode. The value of L shall be measured
beforehand.
5.2.5 Precautions to be observed
Harmonics or spurious responses from the signal generator should be reduced to a negligible
level.
5.2.6 Measurement procedure
The measurement procedure is as follows:
a) connect the test system as shown in Figure 2;
b) the bias voltage under specified conditions is applied;
c) the frequency of the signal generator is set to the specified values;
d) an adequate input power is applied to the device being measured, the output voltage
waveform is shown on oscilloscope;
e) by varying the input power, confirm that the lower edge of the output voltage is tangent to
the noise peak voltage;
f) the input power at point B is the tangential signal sensitivity, which is calculated from
Formula (1).
5.2.7 Specified conditions
The specified conditions are as follows:
– ambient or reference-point temperature;
– bias conditions;
– frequency.
5.3 Input return loss (L )
ret(in)
5.3.1 Purpose
To measure the input return loss under specified conditions.
5.3.2 Measuring methods
5.3.2.1 General
Two measuring methods are given:
– method 1, using a signal generator;
– method 2, using a network analyser.
5.3.2.2 Measuring method 1
5.3.2.2.1 Circuit diagram
The measuring circuit is shown in Figure 4.

Figure 4 – Circuit diagram for the measurement of the input return loss (method 1)
5.3.2.2.2 Principle of measurement
The input return loss is derived from Formula (2):
L = P (|Γ| = 1) − P
ret(in) m2 m2 (2)
where
P (|Γ| = 1) is the power indicated by the power meter 2, when the line at point B is either
m2
short-circuited or open-circuited;
P is the power indicated by the power meter 2 when the device being measured is
m2
inserted;
L is expressed in dB; P (|Γ| = 1) and P are expressed in dBm.
ret(in) m2 m2
5.3.2.2.3 Circuit description and requirements
The purpose of the isolator is to maintain a constant input power level to the device being
measured, irrespective of impedance mismatches at its input.
The value of L , which is the power at the point A, less the power at the point B and is expressed
in dB, shall be measured beforehand.
5.3.2.2.4 Precautions to be observed
Harmonics or spurious responses from the signal generator should be reduced to a negligible
level.
5.3.2.2.5 Measurement procedure
The measurement procedure is as follows:
a) connect the test system as shown in Figure 4;
b) the line at point B is either short-circuited or open-circuited;
c) the frequency of the signal generator shall be set to the specified value;
d) the input power, which is derived from Formula (1), shall be set to the specified value;
e) the value P (|Γ| = 1) is measured by the power meter 2;
m2
f) the input port of the device being measured is connected to the point B;
g) the bias voltage under specified conditions is applied;
h) the value P is measur
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