IEC 60747-4:1991/AMD2:1999

Amendment 2 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors

General Information

• Status: Published
• Publication Date: 15-Apr-1999
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47E - Discrete semiconductor devices
• Current Stage: DELPUB - Deleted Publication
• Start Date: 23-Aug-2007
• Completion Date: 26-Oct-2025

Relations

• Amends: IEC 60747-4:1991 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
• Effective Date: 05-Sep-2023
• Revised: IEC 60747-4:2007 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
• Effective Date: 05-Sep-2023

Overview

IEC 60747-4:1991/AMD2:1999 is an amendment to the IEC standard for semiconductor discrete microwave devices (diodes, transistors and integrated microwave amplifiers). Amendment 2 (1999) updates terminology, essential ratings and measurement methods for microwave field‑effect transistors (FETs) and adds a new chapter on integrated circuit microwave amplifiers. The amendment clarifies definitions used in RF/microwave device specifications and prescribes standardized test procedures for noise and gain parameters.

Key topics and technical requirements

• Revised title and scope to emphasize “Microwave devices” (diodes and transistors).
• Updated terminology and ratings for microwave FETs, including:
  • Output power at 1 dB gain compression (Po(1dB))
  • Power gain at 1 dB compression (Gp(1dB))
  • Power added efficiency (ηadd)
  • Associated gain (Gas) and Maximum available gain (Ga(max))
  • Minimum noise figure (Fmin), equivalent input noise resistance (Rn) and source reflection factor for Fmin (ΓGFmin)
• Noise figure measurement methods:
  • Prescribes a basic RF measurement circuit (noise source, isolators, low‑noise amplifier, mixer) and use of the hot/cold (ENR) method to determine overall noise figure and associated gain.
  • Defines formulas to compute F, associated gain Gas and intermediate noise figures from measured hot/cold noise powers and ENR; measurement temperature reference is 290 K.
  • Specifies precautions (shielding, grounding, SSB/DSB considerations and mixer image rejection).
• Procedure to determine minimum noise figure and noise parameters:
  • Measurement of noise figure versus source admittance (G + jB) at multiple source impedances to derive Fmin, Rn and the source admittance (G0, B0) for Fmin.
  • Algebraic procedure to solve simultaneous equations from multiple measurements to extract noise parameters.
• New chapter on Integrated Circuit Microwave Amplifiers:
  • Terminology (linear gain, gain flatness, limiting power, intermodulation, AM–PM conversion, group delay).
  • Essential specification items: circuit identification, categories (low‑noise, AGC, limiting, power), block diagrams, terminal functions, package and application details.

Applications and typical users

• Useful for RF/microwave design engineers, test laboratories, and semiconductor manufacturers who:
  • Specify and verify device noise performance and gain for low‑noise amplifiers (LNAs), power amplifiers and microwave ICs.
  • Prepare datasheets and product qualification procedures for microwave diodes, transistors and IC amplifiers.
  • Require standardized test methods for noise figure, minimum noise figure, and source reflection in component acceptance tests.
• Also relevant to systems integrators and procurement teams who compare devices by standardized metrics.

Related standards

• IEC 60747‑1 (Discrete devices - General) - referenced for general measurement concepts.
• IEC 60747‑7 (Bipolar transistors) - referenced for source reflection coefficient conventions.
• IEC 60617 (graphical symbols) - referenced for block diagram symbol guidance.

Keywords: IEC 60747-4, microwave diodes, microwave transistors, FET noise figure measurement, minimum noise figure, equivalent input noise resistance, microwave amplifier standards, RF test methods.

Standards Content (Sample)

INTERNATIONAL
IEC
STANDARD
60747-4
AMENDMENT 2
1999-04
Amendment 2
Semiconductor devices – Discrete devices
Part 4:
Microwave devices
Amendement 2
Dispositifs à semiconducteurs –
Dispositifs discrets
Quatrième partie:
Diodes et transistors hyperfréquences

 IEC 1999 Droits de reproduction réservés  Copyright - all rights reserved
International Electrotechnical Commission 3, rue de Varembé Geneva, Switzerland
Telefax: [phone] e-mail: [e-mail] IEC web site http: //www.iec.ch
CODE PRIX
Commission Electrotechnique Internationale
PRICE CODE X
International Electrotechnical Commission
Pour prix, voir catalogue en vigueur
For price, see current catalogue

– 2 – 60747-4 amend. 2 © IEC:1999(E)

FOREWORD
This amendment has been prepared by subcommittee 47E: Discrete semiconductor devices, of

IEC technical committee 47: Semiconductor devices.

The text of this amendment is based on the following documents:

FDIS Report on voting
47E/123/FDIS 47E/124/RVD
Full information on the voting for the approval of this amendment can be found in the report on
voting indicated in the above table.
A bilingual version of this amendment may be issued at a later date.
––––––––––––––
Amend the title of this standard on the cover page, the title page, and on pages 7 and 11 as
follows:
SEMICONDUCTOR DEVICES – DISCRETE DEVICES –
Part 4: Microwave devices
Page 5
CONTENTS
Add the title of Chapter VIII as follows and renumber chapter VIII as chapter IX:
CHAPTER VIII: INTEGRATED CIRCUIT MICROWAVE AMPLIFIERS
1 Terminology
2 Essential ratings and characteristics
3 Measuring methods
60747-4 Amend. 2 © IEC:1999(E) – 3 –

Page 147
CHAPTER VII: FIELD EFFECT TRANSISTORS

2.1.4 Powers
Replace this subclause by the following new subclause:

2.1.4 Powers
Output power at 1 dB gain compression P
o(1dB)
or:
Output power at specified input power P
o
Power gain at 1 dB gain compression G
p(1dB)
Power added efficiency η
add
Associated (power) gain G
as
Maximum available gain (Note 1) G
a(max)
Minimum noise figure F
min
Source reflection factor for minimum noise figure (Notes 2 and 3) r
GFmin
R
Equivalent input noise resistance
n
NOTE 1 – The abbreviation "MAG" is still in common use for maximum available gain.
*
NOTE 2 – For source reflection coefficient (factor), see 5.3.3 of IEC 60747-7, Chapter II .
NOTE 3 – The symbol "Γ " is still in common use for the source reflection factor for minimum noise figure.
opt
Page 149
2.2.3 Power
Add the following definitions:
Minimum noise figure
The minimum value of the noise figure that can be obtained through adjustment of the source
impedance under specified bias condition and a specified frequency.

Equivalent input noise resistance
The quotient of the equivalent input noise voltage and the equivalent input noise current (see
**
5.4.9 and 5.4.10 of IEC 60747-1, Chapter IV ).
––––––––
*
Semiconductor devices – Discrete devices – Part 7: Bipolar transistors
IEC 60747-7 (all parts),
**
IEC 60747-1:1983, Semiconductor devices – Discrete devices – Part 1: General

– 4 – 60747-4 amend. 2 © IEC:1999(E)

Page 153
3.2.2 RF characteristics
Add the following new essential ratings and characteristics:
Categories
3.2.2.8 Minimum noise figure
AB
Maximum value under specified conditions +

3.2.2.9 Source reflection factor for minimum noise figure
Maximum and minimum values under specified conditions +
NOTE – Maximum and minimum values respectively should be prescribed for magnitude
and angle.
3.2.2.10 Equivalent input noise resistance
Maximum and minimum values under specified conditions
+
4 Measurement methods
Replace subclauses 4.10 and 4.11 by the following new subclause 4.10:
4.10 Noise figure (F) and associated gain (G )
as
4.10.1 Purpose
To measure the noise figure of a microwave field-effect transistor under specified conditions.
4.10.2 Circuit diagram
Frequency
RF generator
meter
Noise
Noise and
Low noise
Mixer
source
gain
amplifier
meter
A
Isolator
Isolator
Input Input
Device
Bias impedance
impedance Bias
being
network
matching matching
network
B C
measured
network
network
I
A DS
V
V V V
V V GS DS
DS
GS
IEC  575/99
Figure 46 – Basic circuit for the measurement of the noise figure

60747-4 Amend. 2 © IEC:1999(E) – 5 –

4.10.3 Principle of measurements

The noise figure F of the device being measured is derived from the following equation.

F / 10
 2 
10 − 1
(F − L ) / 10
12 1
 
F = 10 log 10 − (1)
G / 10
 
m
 
where
F is the overall noise figure;
L is the circuit loss from point A to B;

F is the noise figure after point C at the output stage, and
G is the associated gain of the device being measured.
as
F, F , F , L and G are expressed in decibels. The noise figure measurement is carried out
12 2 1 as
by using the hot and cold measurement method. F , F and G are calculated as follows:
12 2 as
ENR /10
 
 
F = 10 log (2)
 
(P / P ) − 1
N1 N2
 
ENR / 10
 
 
F = 10 log (3)
 
(P / P ) − 1
N3 N4
 
 P − P 
N1 N2
 
G = 10 log (4)
as
 
P − P
 N3 N4 
where
ENR is the excess noise ratio of the noise source;
P and P in W are the measured noise power under the hot and cold state of the noise
N1 N2
source, respectively.
P and P in W are the measured noise powers under the hot and cold state of the noise
N3 N4
source, respectively, in the case of directly connecting point B to C in
figure 46.
The temperature of the measurement is 290 K.
4.10.4 Circuit description and requirements
The circuit loss L from point A to B should be measured beforehand.
4.10.5 Precautions to be observed
The entire circuit shall be shielded and grounded to prevent undesired signals. For noise figure
measurement under the single-side-band (SSB) condition, careful attention shall be paid to the
image and other spurious responses which are generated by the mixer. These spurious
responses should be reduced so as to be negligible.

– 6 – 60747-4 amend. 2 © IEC:1999(E)

4.10.6 Measurement procedure
The frequency of the r.f. generator is adjusted to the specified condition.

In order to measure the noise contribution of the measurement system, connect point B to C in

figure 46 without the device being measured and set the input and output impedance matching

networks to 50 Ω.
The noise power P and P corresponding to the noise source hot and cold, respectively, are
N3 N4
measured.
The noise figure F in decibels is calculated by equation (3).
The device being measured is inserted as shown in figure 46.
The gate-source voltage V (near the gate-source cut-off voltage) is applied.
GS
The specified drain-source voltage V is applied.
DS
The drain current I is adjusted to the specified value by varying V .
DS GS
During the adjustment of the input and output matching networks, the noise power P and P
N1 N2
corresponding to the noise source hot and cold, respectively, are measured.
The noise figure F in decibels is calculated by equation (2).
The associated gain G in decibels is calculated by equation (4).
as
The noise figure F in decibels is calculated by equation (1).
The input impedance matching network is adjusted to the minimum value of F.
The output impedance matching network is adjusted to the maximum value of G .
as
Repeat the above two steps until no further reduction in noise figure F is possible.
4.10.7 Specified conditions
– Ambient or reference point temperature
– Drain source voltage
– Drain current
– Frequency
– Single-side band or double-side band.
Renumber subclauses 4.12 as 4.11 and 4.13 as 4.12 and add the following new subclause 4.13:
4.13 Minimum noise figure (F ), equivalent input noise resistance (R ) and
min n
source reflection factor for minimum noise figure (r )
GFmin
4.13.1 Purpose
To measure the minimum noise figure, equivalent input noise resistance and source reflection
factor for the minimum noise figure of a microwave field-effect transistor under specified
conditions.
4.13.2 Circuit diagram
See the circuit diagram in 4.10.2.

60747-4 Amend. 2 © IEC:1999(E) – 7 –

4.13.3 Principle of measurements

See the principle of measurements in 4.10.3.

The noise figure dependence on the source admittance can be expressed as:

R
n 2 2
F = F + { (G − G ) + (B − B ) } (1)
min s 0 s 0
G
s
where
F is the noise figure
F is the minimum noise figure
min
R is the equivalent input noise resistance
n
G is the source conductance
s
B is the source susceptance
s
G is the source conductance for F
0 min
B is the source susceptance for F
0 min
To determine the four parameters, F , R , G and B , four dimensional simultaneous
min n 0 0
equations should be solved.
From equation (1)
2 2
R Y R Y
 B 
n 0 n s
s
F = F + − 2 R G + − 2 R B   (2)
min n 0 n 0
 
G G G
s s s
 
where
Y = G + jB (3)
0 0 0
Y = G + jB (4)
s s s
In equation (2), X , X , X and X are defined as
1 2 3 4
X = F – 2 R G
1 min n 0
X = R Y
2 n 0
X = R (5)
3 n
X = R B
4 n 0
Then, equation (2) leads to the following equations for n different Y
s
Y
 B 
1 s(1)
s(1)
 
F = X + X + X − 2 X
(1) 1 2 3 4
 
G G G
s(1) s(1) s(1)
 
(6)
•
•
•
Y
 B 
1 s(n)
s(n)
 
F = X + X + X − 2 X
(n) 1 2 3 4
 
G G G
s(n) s(n) s(n)
 
– 8 – 60747-4 amend. 2 © IEC:1999(E)

Substituting X , X , X and X obtained from equation (6) into equation (5), the four parameters
1 2 3 4
are determined as follows:
= + − (7)
F X 2 X X X
min 1 2 3 4
R = X (8)
n 3
G = X / X − (X / X ) (9)
0 2 3 4 3
B = X / X (10)
0 4 3
Γ , source reflection factor for F , is determined from the above G and B .
Fmin min 0 0
4.13.4 Circuit description and requirements
See the circuit description and requirements in 4.10.4.
4.13.5 Precautions to be observed
See the precaution to be observed in 4.10.5.
4.13.6 Measurement procedure
The frequency of the r.f. generator is adjusted to the specified condition.
The device being measured is inserted as shown in figure 46.
The gate-source voltage V (near gate-source cut-off voltage) is applied.
GS
The specified drain-source voltage V is applied.
DS
The drain current I is adjusted to the specified value by varying V .
DS GS
The input impedance matching network is adjusted so that the source admittance becomes
(G , B ).
s(1) s(1)
The output impedance matching network is adjusted so that the maximum power gain is
achieved.
The noise figure F is measured in accordance with the procedure described in 4.10.6.
(1)
Repeating the above procedure n times, F are determined for the n source admittance
(1)–(n)
(G , B ).
s(1)–(n) s(1)–(n)
The noise parameters: F , R and Γ are determined from the equations (6) to (10).
min n Fmin
4.13.7 Specified conditions
– Ambient or reference point temperature
– Drain source voltage
– Drain current
– Frequency
– Single-side band or double-side band.

60747-4 Amend. 2 © IEC:1999(E) – 9 –

Page 155
Add the following new chapter and renumber chapter VIII as chapter IX:

CHAPTER VIII – INTEGRATED CIRCUIT MICROWAVE AMPLIFIERS

1 Terminology
1.1 Linear (power) gain G
lin
The power gain in the linear region of the power transfer curve P (dBm) = f(P ).
o i
P P
NOTE – In this region, Δ (dBm) = Δ (dBm).
o i
1.2 Linear (power) gain flatness ΔG
lin
The power gain flatness when the operating point lies in the linear region of the power transfer
curve.
1.3 Power gain G , G
p
The ratio of the output power to the input power.
NOTE – Usually the power gain is expressed in decibels.
1.4 (Power) gain flatness ΔG
p
The difference between the maximum and minimum power gain for a specified input power in a
specified frequency range.
1.5 (Maximum available) gain reduction, ΔG
red
The difference in decibels between the maximum and minimum power gains that can be provided
by the gain control.
1.6 Output power limiting
1.6.1 Output power limiting range
The range in which, for rising input power, the output power is limiting.
NOTE – For specification purposes, the limits of this range are specified by specified lower and upper limit values
for the input power.
1.6.2 Limiting output power P
o(ltg)
The output power in the range where it is limiting.
1.6.3 Limiting output power flatness ΔP
o(ltg)
The difference between the maximum and minimum output power in the output power limiting
range:
ΔP = P – P
o(ltg) o(ltg,max) o(ltg,min)
– 10 – 60747-4 amend. 2 © IEC:1999(E)

1.7 Intermodulation distortion P/P
n i
The ratio of
the output power of the nth order component to

the output power of the fundamental component,

at a specified input power.
1.8 Power at the intercept point (for intermodulation products) P
n(IP)
The output power at intersection between the extrapolated output powers of the fundamental

component and the nth order intermodulation components, when the extrapolation is carried

out in a diagram showing the output power of the components (in decibels) as a function of the
input power (in decibels).
1.9 Magnitude of the input reflection coefficient (input return loss) s 
See 5.2.1 of IEC 60747-7, Chapter II.
1.10 Magnitude of the output reflection coefficient (output return loss) s 
See 5.2.2 of IEC 60747-7, Chapter II.
1.11 Magnitude of the reverse transmission coefficient (isolation) s 
See 5.2.4 of IEC 60747-7, Chapter II.
1.12 Conversion coefficient of amplitude modulation to phase modulation α
(AM-PM)
The quotient of
the phase deviation of the output-signal (in degrees) by
the change in input power (in decibels) producing it.
1.13 Group delay time t
d(grp)
The ratio of the change, with angular frequency, of the phase shift through the amplifier.
NOTE – Usually group delay time is very close in value to input-to-output delay time.

60747-4 Amend. 2 © IEC:1999(E) – 11 –

2 Essential ratings and characteristics for integrated circuit

microwave amplifiers
2.1 General
2.1.1 Circuit identification and types

2.1.1.1 Designation and types
Indication of type (device name), category of circuit and technology applied should be given.

Microwave amplifiers are divided into four categories:
Type A: Low-noise type.
Type B: Auto-gain control type.
Type C: Limiting type.
Type D: Power type.
2.1.1.2 General function description
A general description of the function performed by the integrated circuit microwave amplifiers,
and the features for the application should be made.
2.1.1.3 Manufacturing technology
The manufacturing technology, for example, semiconductor monolithic integrated circuit, thin
film integrated circuit, micro-assembly, should be stated. This statement should include details
of the semiconductor technologies such as MESFET, MISFET, Si bipolar transistor, HBT, etc.
2.1.1.4 Package identification
The following statements should be made:
a) IEC and/or national reference number of the outline drawing, or drawing of non-standard
package including terminal numbering;
b) principal package material, for example, metal, ceramic, plastic.
2.1.1.5 Main application
Main application should be stated, if necessary. If the device has restrictive applications, these
should be stated here.
2.2 Application related description
Information on the application of the integrated circuit and its relation to the associated devices
should be given.
2.2.1 Conformance to system and/or interface information
It should be stated whether the integrated circuit conforms to an application system and/or
interface standard or recommendation.
The detailed information about application systems, equipment and circuits such as VSAT
systems, DBS receivers, microwave landing systems, etc., also should be given.
2.2.2 Overall block diagram
A block diagram of the applied systems should be given, if necessary.

– 12 – 60747-4 amend. 2 © IEC:1999(E)

2.2.3 Reference data
The most important properties to permit comparison between derivative types should be given.

2.2.4 Electrical compatibility

It should be stated whether the integrated circuit is electrically compatible with other particular

integrated circuits or families of integrated circuits or whether special interfaces are required.

Details should be given of the type of the input and output circuits, for example, input/output
impedances, d.c. block, open-drain, etc. Interchangeability with other devices, if any, should be
given.
2.2.5 Associated devices
If applicable, the following should be stated here:
– devices necessary for correct operation (list with type number, name, and function);
– peripheral devices with direct interfacing (list with type number, name, and function).
2.3 Specification of the function
2.3.1 Detailed block diagram – Functional blocks
A detail block diagram or equivalent circuit information of the integrated circuit microwave
amplifiers should be given. The block diagram should be composed of the following:
1) functional blocks;
2) mutual interconnections among the functional blocks;
3) individual functional units within the functional blocks;
4) mutual interconnections among the individual functional blocks;
5) function of each external connection;
6) interdependence between the separate functional blocks.
The block diagram should identify the function of each external connection and, where no
ambiguity can arise, can also show the terminal symbols and/or numbers. If the encapsulation
has metallic parts, any connection to them from external terminals should be indicated. The
connections with any associated external electrical elements should be stated, where necessary.
As additional information, the complete electrical circuit diagram can be reproduced, but not
necessarily with indications of the values of the circuit components. The graphical symbol for

the function shall be given. This may be obtained from a catalogue of standards of graphical
*
symbols or designed according to the rules of IEC 60617-12 or IEC 60617-13 .
––––––––
*
IEC 60617-12:1997, Graphical symbols for diagrams – Part 12: Binary logic elements
IEC 60617-13:1993, Graphical symbols for diagrams – Part 13: Analogue elements

60747-4 Amend. 2 © IEC:1999(E) – 13 –

2.3.2 Identification and function of terminals

All terminals should be identified on the block diagram (supply terminals, input or output

terminals, input/output terminals).

The terminal functions 1)-4) should be indicated in a table as follows:

Function of terminal
Terminal Terminal 1) Terminal 2) Function

number symbol designation
3) Input/output 4) Type of
identification input/output circuit

1) Terminal name
A terminal name to indicate the function terminal should be given. Supply terminals, ground
terminals, blank terminals (with abbreviation NC), non-usable terminals (with abbreviation
NU) should be distinguished.
2) Function
A brief indication of the terminal function should be given.
– Each function of multi-role terminals, that is terminals that have multiple functions.
– Each function of the integrated circuit selected by mutual pin connections, programming
and/or application of function selection data to the function selection pin, such as mode
selection pin.
3) Input/output identification
Input, output, input/output, and multiplex input/output terminals should be distinguished.
4) Type of input/output circuits
The type of the input and output circuits, for example input/output impedances, with or
without d.c. block, etc., should be distinguished.
5) Type of ground
If the baseplate of the package is used as ground, this should be stated.
Example:
Supply voltage
Integrated
Input(s)
NC
circuit
microwave
NU Output(s)
amplifiers
Ground IEC  575a/99
– 14 – 60747-4 amend. 2 © IEC:1999(E)

2.3.3 Functional description
The function performed by the circuit should be specified, including the following information:

– basic function;
– relation to external terminals;

– operation mode (e.g., set-up method, preference, etc.);

– interrupt handling.
2.3.4 Family-related characteristics

In this part, all the family-specific functional descriptions shall be stated (refer to IEC 60748-2,
*
IEC 60748-3 and IEC 60748-4 ).
If ratings and characteristics and function characteristics exist for the family, the relevant part
of IEC 60748 should be used (for example for microprocessors, see IEC 60748-2, Chapter III,
Section 3).
NOTE – For each new device family, specific items shall be added in the relevant part of IEC 60748.
2.4 Limiting values (absolute maximum rating system)
The table of these values contains the following.
a) Any interdependence of limiting conditions shall be specified.
b) If externally connected and/or attached elements, for example heatsinks, have an influence
on the values of the ratings, the ratings shall be prescribed for the integrated circuit with the
elements connected and/or attached.
c) If limiting values are exceeded for transient overload, the permissible excess and their
duration shall be specified.
d) Where minimum and maximum values differ during programming of the device, this should
be stated.
e) All voltages are referenced to a specified reference terminal (V , G , etc.).
ss ND
f) In satisfying the following clauses, if maximum and/or minimum values are quoted, the
manufacturer must indicate whether he refers to the absolute magnitude or to the algebraic
value of the quantity.
g) The ratings given must cover the operation of the multi-function integrated circuit over the
specified range of operating temperatures. Where such ratings are temperature-dependent,
this dependence should be indicated.

––––––––
*
IEC 60748-2 (all parts), Semiconductor devices – Integrated circuits – Part 2: Digital integrated circuits
Semiconductor devices – Integrated circuits – Part 3: Analogue integrated circuits
IEC 60748-3 (all parts),
IEC 60748-4 (all parts), Semiconductor devices – Integrated circuits – Part 4: Inteface integrated circuits

60747-4 Amend. 2 © IEC:1999(E) – 15 –

2.4.1 Electrical limiting values

Limiting values should be specified as follows:

Parameters Min. Max.
(1) Power supply voltages + +
(2) Power supply currents (where appropriate) +

(3) Input voltage(s) (where appropriate) + +

(4) Output voltage(s) (where appropriate) + +

(5) Input current(s) (where appropriate) +

(6) Output current(s) (where appropriate) +
(7) Other terminal voltage(s) (where appropriate) + +
(8) Other terminal current(s) (where appropriate) +
(9) Voltage difference between input and output ++
(where appropriate)
(10) Power dissipation +
The detail specification may indicate those values within the table including note 1 and note 2.
Parameters (Note 1, Note 2) Symbols Min. Max. Unit
NOTE 1 – Where appropriate, in accordance with the type of considered circuit.
NOTE 2 – For power supply voltage range:
– limiting value(s) of the continuous voltage(s) at the supply terminal(s) with
respect to a special electrical reference point;
– where appropriate, limiting value between specified supply terminals;
– when more than one voltage supply is required, a statement should be made
as to whether the sequence in which these supplies are applied is
significant: if so, the sequence should be stated;
– when more than one supply is needed, it may be necessary to state the
combinations of ratings for these supply voltages and currents.
2.4.2 Temperatures
1) Operating temperature
2) Storage temperature
3) Channel temperature (type C and type D only)

4) Lead temperature (for soldering).
The detail specification may indicate those values within the table including the NOTE.
Parameters (Note) Symbols Min. Max. Unit
NOTE – Where appropriate, in accordance with the type of considered circuit.

– 16 – 60747-4 amend. 2 © IEC:1999(E)

2.5 Operating conditions (within the specified operating temperature range)

They are not to be inspected, but may be used for quality assessment purpose.

2.5.1 Power supplies positive and /or negative values

2.5.2 Initialization sequences (where appropriate)

If special initialization sequences are necessary, the power supply sequencing and the

initialization procedure should be specified.

2.5.3 Input voltage(s) (where appropriate)
2.5.4 Output current(s) (where appropriate)
2.5.5 Voltage and/or current of other terminal(s)
2.5.6 External elements (where appropriate)
2.5.7 Operating temperature range
2.6 Electrical characteristics
The characteristics shall apply over the full operating temperature range, unless otherwise
specified.
Each characteristic of 2.6.1 and 2.6.2 should be stated, either
a) over the specified range of operating temperatures, or
b) at a temperature of 25 °C, and at maximum and minimum operating temperatures.
2.6.1 Static characteristics
The parameters should be specified corresponding to the type as follows:
Parameters Min. Typ.* Max. Types
ABCD
2.6.1.1 Power supply current + + + + + + +
2.6.1.2 Thermal resistance + + +
* Optional
The detail specification may indicate those values within the table.

Characteristics Symbols Conditions Min. Typ.* Max. Unit
* Optional
60747-4 Amend. 2 © IEC:1999(E) – 17 –

2.6.2 Dynamic or a.c. characteristics

Each dynamic or a.c. electrical characteristic should be stated under specified electrical worst-

case conditions with respect to the recommended range of supply voltages, as stated in 2.5.1.

The parameters should be specified corresponding to the type as follows:

Parameters Min. Max. Types
A BCD
2.6.2.1 Linear gain + + + +
2.6.2.2 Linear gain flatness + + + +
2.6.2.3 Power gain + + +
2.6.2.4 Power gain flatness + + +
2.6.2.5 Gain reduction + +
2.6.2.6 Output power + + +
2.6.2.7 Output power at 1 dB gain compression + + +
2.6.2.8 Limiting output power + + +
2.6.2.9 Limiting output power flatness + +
2.6.2.10 Intermodulation distortion + + +
2.6.2.11 Power at intercept point + + +
2.6.2.12 Noise figure + +
2.6.2.13 Magnitude of the input reflection coefficient + + +++
(input return loss)
2.6.2.14 Magnitude of the output reflection coefficient +++
(output return loss)
2.6.2.15 Magnitude of the reverse transmission coefficient + + +++
(isolation)
2.6.2.16 Conversion coefficient of amplitude modulation to +++
phase modulation (where appropriate)
2.6.2.17 Group delay time (where appropriate) + + + +
2.6.2.18 Time constant for automatic gain control *
* Under consideration
NOTE – It is necessary for types B and D to select either the parameter set of 2.6.2.1, 2.6.2.2 and 2.6.2.7 or that
of 2.6.2.3, 2.6.2.4 and 2.6.2.6.
The detail specification may indicate those values within the table.

Characteristics Symbols Conditions Min. Typ.* Max. Unit
* Optional
– 18 – 60747-4 amend. 2 © IEC:1999(E)

2.7 Mechanical and environmental ratings, characteristics and data

Any specific mechanical and environmental ratings applicable should be stated (see also

IEC 60747-1, Chapter VI, clause 7)

2.8 Additional information
Where appropriate, the following information should be given.

2.8.1 Equivalent input and output circuit

Detailed information should be given regarding the type of the input and output circuits for
example, input/output impedances, d.c. block, open-drain, etc.
2.8.2 Internal protection
A statement should be given to indicate whether the integrated circuit contains internal
protection against high static voltages or electrical fields.
2.8.3 Capacitors at terminals
If capacitors for the input/output d.c. block are needed, these capacitances should be stated.
2.8.4 Thermal resistance
2.8.5 Interconnections to other types of circuit
Where appropriate, details of the interconnections to other circuits, for example, detector
circuit for AGC, sense amplifiers, buffer, should be given.
2.8.6 Effects of externally connected component(s)
Curves or data indicating the effect of externally connected component(s) that influence the
characteristics may be given.
2.8.7 Recommendations for any associated device(s)
For example, decoupling of power supply to a high-frequency device should be stated.
2.8.8 Handling precautions
Where appropriate, handling precautions specific to the circuit should be stated (see also

IEC 60747-1, Chapter IX).
2.8.9 Application data
2.8.10 Other application information
2.8.11 Date of issue of the data sheet

60747-4 Amend. 2 © IEC:1999(E) – 19 –

3 Measuring methods
3.1 General
3.1.1 Characteristic impedances

The input and output characteristic impedances of the measurement system, shown in the

circuit in this standard, are 50 Ω. If they are not 50 Ω, they should be specified.

3.1.2 General precautions
The general precautions listed in clause 1 of IEC 60747-1, Chapter VII, apply. In addition,
special care should be taken to use low-ripple d.c. supplies and to decouple adequately all bias
supply voltages at the frequency of measurement. And also special care about the load
impedance of the test circuit should be taken to measure the output power.
3.1.3 Handling precautions
When handling electrostatic-sensitive devices, the handling precautions given in IEC 60747-1,
Chapter IX, clause 1, shall be observed.
3.1.4 Types
The devices in this standard are both package and chip types, measured using suitable test
fixtures.
– 20 – 60747-4 amend. 2 © IEC:1999(E)

3.2 Linear (power) gain (G )
lin
3.2.1 Purpose
To measure the linear gain under specified conditions.

3.2.2 Circuit diagram
Frequency
meter
E B C
Directional
Variable
coupler
Device
attenuator
Isolator
being
measured
A
Signal
generator
Power
Bias
meter 1
supply
Directional
Spectrum
coupler
analyzer
D
Power
meter 2
IEC  576/99
Figure 47 – Circuit for the measurements of linear gain
3.2.3 Principle of measurements
In the circuit diagram shown in figure 47, the input power P and the output power P of the
i o
device being measured are derived from the following equation:
= + (2-1)
P P L
i 1 1
P = P + L (2-2)
o 2 2
where P and P are the value indicated by the power meters 1 and 2, respectively.
1 2
L = L – L
1 A B
where L is the loss from point E to point A
...