IEC 62047-35:2019

Semiconductor devices - Micro-electromechanical devices - Part 35: Test method of electrical characteristics under bending deformation for flexible electro-mechanical devices

IEC 62047-35:2019 specifies the test method of electrical characteristics under bending deformation for flexible electromechanical devices. These devices include passive micro components and/or active micro components on the flexible film or embedded in the flexible film. The desired in-plane dimensions of the device for the test method ranges typically from 1 mm to 300 mm and the thickness ranges from 10 mm to 1 mm, but these are not limiting values. The test method is so designed as to bend devices in a quasi-static manner monotonically up to the maximum possible curvature, i.e. until the device is completely folded, so that the entire degradation behaviour of the electric property under bending deformation is obtained. This document is essential to estimate the safety margin under a certain bending deformation and indispensable for reliable design of the product employing these devices.

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 35 : Méthode d’essai des caractéristiques électriques sous déformation par courbure de dispositifs électromécaniques souples

L’IEC 62047-35:2019 spécifie la méthode d’essai des caractéristiques électriques sous déformation par courbure de dispositifs électromécaniques souples. Ces dispositifs incluent des microcomposants passifs et/ou des microcomposants actifs situés sur ou intégrés dans le film souple. Typiquement, les dimensions dans le plan souhaitées du dispositif pour la méthode d’essai sont comprises entre 1 mm et 300 mm, et l’épaisseur est comprise entre 10 mm et 1 mm. Ces valeurs ne sont pas limitatives. La méthode d’essai est conçue pour plier les dispositifs de manière quasi statique et monotone, jusqu’à la courbure maximale possible, c’est-à-dire jusqu’à ce que le dispositif soit complètement plié, afin d’obtenir le comportement des propriétés électriques sous dégradation complète, lors d’une déformation par courbure. Le présent document est essentiel pour estimer la marge de sécurité lors d’une certaine déformation par courbure et indispensable pour concevoir de manière fiable des produits qui utilisent ces dispositifs.

General Information

• Status: Published
• Publication Date: 21-Nov-2019
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47F - Micro-electromechanical systems
• Current Stage: PPUB - Publication issued
• Start Date: 20-Dec-2019
• Completion Date: 22-Nov-2019

Standards Content (Sample)

IEC 62047-35 ®
Edition 1.0 2019-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 35: Test method of electrical characteristics under bending deformation
for flexible electromechanical devices

Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 35: Méthode d’essai des caractéristiques électriques sous déformation
par courbure de dispositifs électromécaniques souples

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IEC 62047-35 ®
Edition 1.0 2019-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –

Part 35: Test method of electrical characteristics under bending deformation

for flexible electromechanical devices

Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –

Partie 35: Méthode d’essai des caractéristiques électriques sous déformation

par courbure de dispositifs électromécaniques souples

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99 ISBN 978-2-8322-7636-5

– 2 – IEC 62047-35:2019 © IEC 2019
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
3.1 General . 7
3.2 Loading configurations . 7
3.3 Measure of loading levels . 8
4 Test piece . 8
4.1 General . 8
4.2 Shape of a test piece . 8
5 Test method . 9
5.1 Principle . 9
5.2 Test apparatus . 10
5.3 Procedure . 10
5.3.1 Testing conditions . 10
5.3.2 Selection of bending direction . 11
5.3.3 Determination of bending axes . 11
5.3.4 Measurement of test piece dimensions . 11
5.3.5 Measurement of folding distance . 12
5.3.6 Number of tests . 12
5.3.7 Instrumentation . 12
5.3.8 End of testing . 13
6 Test report . 13
6.1 General . 13
6.2 Bending direction(s) and in-plane locations of bending axes . 13
6.3 Dimensions of the test piece . 14
6.4 Performance degradation characteristics with the folding distance . 14
6.5 Distance at a defined operation limit . 15
6.6 Testing conditions . 15
Annex A (normative) Example of flexible MEMS device . 16
Annex B (informative) Controls for appropriate performance instrumentation and
setting of bending axis position . 18
B.1 Loading wall design with electric accessing cavity and fine adjustment
capability for bending axis location during the test . 18
B.2 Special arrangement of the target parts of device to obtain a number of
bending axis locations in a single testing . 19
Annex C (informative) Loading principle for extremely thin soft devices . 20
Annex D (informative) Issues related to local loading severity . 21
D.1 Possible inhomogeneity in local curvature and parameter of loading . 21
D.2 Possible variations of loading parameter . 21

Figure 1 – Schematic illustration of a flexible MEMS test piece . 9
Figure 2 – Principle of folding test . 10
Figure 3 – Selection of bending axis . 12
Figure 4 – Illustration of performance degradation in the test report . 14

Figure A.1 – Target part and loading configuration of test piece for organic thin-film
transistor device . 16
Figure A.2 – Device performance degradation behaviour and distances at defined

operation limits for an organic thin-film effect transistor . 17
Figure B.1 – Loading point adjustment mechanism . 18
Figure B.2 – Cascade arrangement of target parts for efficient testing . 19
Figure C.1 – Bending configuration . 20
Figure D.1 – Possibility of inhomogeneous local curvature distribution . 21

– 4 – IEC 62047-35:2019 © IEC 2019
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 35: Test method of electrical characteristics under bending
deformation for flexible electromechanical devices

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