Practice for dosimetry in an electron beam facility for radiation processing at energies between 300 keV and 25 MeV

ISO/ASTM 51649:2015 outlines dosimetric procedures to be followed in installation qualification (IQ), operational qualification (OQ) and performance qualifications (PQ), and routine processing at electron beam facilities. The electron beam energy range covered in this practice is between 300 keV and 25 MeV, although there are some discussions for other energies. Dosimetry is only one component of a total quality assurance program for adherence to good manufacturing practices used in radiation processing applications. Other measures besides dosimetry may be required for specific applications such as health care product sterilization and food preservation. ISO/ASTM 51649:2015 is one of a set of standards that provides recommendations for properly implementing and utilizing dosimetry in radiation processing. It is intended to be read in conjunction with ISO/ASTM 52628, "Practice for Dosimetry in Radiation Processing".

Pratique de la dosimétrie dans une installation de traitement par irradiation utilisant un faisceau d'électrons d'énergies comprises entre 300 keV et 25 MeV

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Published
Publication Date
16-Mar-2015
Current Stage
9560 - Close of voting
Start Date
02-Jan-2025
Due Date
03-Jan-2025
Completion Date
03-Jan-2025
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ISO/ASTM 51649:2015 - Practice for dosimetry in an electron beam facility for radiation processing at energies between 300 keV and 25 MeV
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INTERNATIONAL ISO/ASTM
STANDARD 51649
Third edition
2015-03-15
Practice for dosimetry in an electron
beam facility for radiation processing at
energies between 300 keV and 25 MeV
Pratique de la dosimétrie dans une installation de traitement par
irradiation utilisant un faisceau d’électrons d’énergies comprises
entre 300 keV et 25 MeV
Reference number
© ISO/ASTM International 2015
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ii © ISO/ASTM International 2015 – All rights reserved

Contents Page
1 Scope. 1
2 Referenced documents. 1
3 Terminology. 2
4 Significance and use. 6
5 Radiation source characteristics. 6
6 Documentation. 6
7 Dosimetry system selection and calibration. 6
8 Installation qualification. 7
9 Operational qualification. 7
10 Performance qualification. 8
11 Routine process control. 9
12 Certification. 10
13 Measurement uncertainty. 10
14 Keywords. 10
Annexes. 11
Figure1 Exampleshowingpulsebeamcurrent(I ),averagebeamcurrent(I ),(pulsewidth
pulse avg
(W) and repetition rate (f) for a pulsed accelerator. 3
Figure 2 Diagram showing beam length and beam width for a scanned beam using a conveyor
system. 3
Figure 3 Example of electron-beam dose distribution along the scan direction, where the beam
width is specified at a defined fractional level f of the average maximum dose D . 4
max
Figure 4 A typical depth-dose distribution for an electron beam in a homogeneous material. 4
Figure 5 Typical pulse current waveform from an S-Band linear accelerator. 5
Figure A2.1 Calculated depth-dose distributions in various homogeneous polymers for normally
incident 5.0 MeV (monoenergetic) electrons using the Program ITS3 (19, 21). 13
FigureA2.2 Calculateddepth-dosedistributionsinvarioushomogeneousmaterialsfornormally
incident 5.0 MeV (monoenergetic) electrons using the Program ITS3 (19, 21). 14
FigureA2.3 Calculateddepth-dosedistributionsinpolystyrenefornormallyincidentelectronsat
monoenergetic energies from 300 to 1000 keV using the Program ITS3 (19, 20). 15
FigureA2.4 Calculateddepth-dosedistributionsinpolystyrenefornormallyincidentelectronsat
monoenergetic energies from 1.0 to 5.0 MeV using the program ITS3 (19, 20). 16
FigureA2.5 Calculateddepth-dosedistributionsinpolystyrenefornormallyincidentelectronsat
monoenergetic energies from 5.0 to 12.0 MeV using the program ITS3 (19, 20). 17
FigureA2.6 Calculated depth-dose distributions inAl andTa for normally incident electrons at a
monoenergetic energy of 25 MeV using the program ITS3 (19, 24). 18
Figure A2.7 Superposition of calculated depth-dose distributions for aluminum irradiated with
5-MeV monoenergetic electrons from both sides with different thicknesses (T) and from one
side using experimental data presented in Refs (18 and 25) (see Notes A2.2-A2.4). 18
Figure A2.8 Calculated correlations between incident electron beam energy and optimum
thickness R , half-value depth R , half-entrance depth R , and practical range R for
opt 50 50e p
polystyrene using data from Fig. A2.3 and Fig. A2.4 (see Table A4.1). 19
Figure A2.9 Calculated correlations between incident electron beam energy and optimum
thickness R , half-value depth R , half-entrance depth R , and practical range R , for
opt 50 50e p
polystyrene using data from Figs. A2.4 and A2.5 (see Table A4.1). 19
FigureA2.10 Measureddepth-dosedistributionsfornominal10MeVelectronbeamsincidenton
polystyrene for two electron beam facilities (26, 27). 20
© ISO/ASTM International 2015 – All rights reserved iii

Figure A2.11 Depth-dose distributions in stacks of cellulose acetate films backed with wood,
aluminum, and iron for incident electrons with 400 keV energy (30). 21
Figure A2.12 Depth-dose distributions with 2 MeV electrons incident on polystyrene absorbers
at various angles from the normal direction (31). 21
Figure A3.1 Stack measurement device. 22
Figure A3.2 Wedge measurement device. 23
Figure A5.1 Example of dose as function of average beam current (I), conveyor speed (V) and
beam width (W ). 26
b
Figure A7.1 Different scan characteristics used for electron beams. 28
Figure A7.2 Example of a scanned and pulsed beam with parameters needed for beam spot
calculations indicated. 28
FigureA8.1 Example of isodose curves obtained by irradiation at a 10-MeV electron accelerator
of expanded polystyrene foam (specific density approximately 0.1 g/cm ). 29
FigureA10.1 Electron energy deposition at the entrance surface of a polystyrene absorber as a
functionofincidentelectronenergyfrom0.3MeVto12MeVcorrespondingtotheMonteCarlo
calculated data shown in Figs. A2.3-A2.5. 31
FigureA10.2 Electron energy deposition at the entrance surface of a polystyrene absorber as a
function of incident electron energy from 0.3 MeV to 2.0 MeV corresponding to the Monte
Carlo calculated data shown in Fig. A2.3 and Fig. A2.4. 32
Table . 4
TableA2.1 Keyparametersformeasureddepth-dosedistributioncurvespresentedinFig.A2.10. 20
Table A3.1 Some relevant properties of common reference materials. 22
TableA4.1 Half-valuedepthR ,half-entrancedepthR ,optimumthicknessR andpractical
50 50e opt
rangeR inpolystyreneformonoenergeticelectronenergiesEfrom0.3to12MeVderivedfrom
p
Monte Carlo calculations (20). 25
TableA4.2 Half-value depthR , practical rangeR and extrapolated rangeR in aluminum for
50 p ex
monoenergetic.electronenergyEfrom2.5to25MeVderivedfromMonteCarlocalculations. (2525)
Table A10.1 Electron energy deposition at the entrance surface of a polystyrene absorber as a
function of incident electron energy from 0.3 MeV to 12 MeV corresponding to the calculated
curves shown in Figs. A2.3-A2.5. 32
Table A11.1 Needs for requalification following changes of an electron beam facility. 33
iv © ISO/ASTM International 2015 – All rights reserved

Foreword
ISO(theInternationalOrganizationforStandardization)isaworldwidefederationofnationalstandardsbodies
(ISO member bodies). The work of preparing International Standards is normally carried out through ISO
technical committees. Each member body interested in a subject for which a technical committee has been
established has the right to be represented on that committee. International organizations, governmental and
non-governmental, in liaison with ISO, also take part in the work. ISO collaborates closely with the
International Electrotechnical Commission (IEC) on all matters of electrotechnical standardization.
Draft International Standards adopted by the technical committees are circulated to the member bodies for
voting. Publication as an International Standard requires approval by at least 75% of the member bodies
casting a vote.
ASTM International is one of the world’s largest voluntary standards development organizations with global
participation from affected stakeholders. ASTM technical committees follow rigorous due process balloting
procedures.
A project between ISO and ASTM International has been formed to develop and maintain a group of
ISO/ASTM radiation processing dosimetry standards. Under this project, ASTM Committee E61, Radiation
Processing, is responsible for the development and maintenance of these dosimetry standards with
unrestricted participation and input from appropriate ISO member bodies.
Attention is drawn to the possibility that some of the elements of this document may be the subject of patent
rights. Neither ISO nor ASTM International shall be held responsible for identifying any or all such patent
rights.
International Standard ISO/ASTM 51649 was developed by ASTM Committee E61, Radiation Processing,
through Subcommittee E61.03, Dosimetry Application, and by Technical Committee ISO/TC 85, Nuclear
energy, nuclear technologies and radiological protection.
This third edition cancels and replaces the second edition (ISO/ASTM 51649:2005), which has been
technically revised.
© ISO/ASTM International 2015 – All rights reserved v

vi © ISO/ASTM International 2015 – All rights reserved

An American National Standard
Standard Practice for
Dosimetry in an Electron Beam Facility for Radiation
Processing at Energies Between 300 keV and 25 MeV
This standard is issued under the fixed designation ISO/ASTM 51649; the number immediately following the designation indicates the
year of original adoption or, in the case of revision, the year of last revision.
1. Scope priate safety and health practices and determine the applica-
bility of regulatory requirements prior to use.
1.1 This practice outlines dosimetric procedures to be fol-
lowed in installation qualification (IQ), operational qualifica-
2. Referenced documents
tion (OQ) and performance qualifications (PQ), and routine
2.1 ASTM Standards:
processing at electron beam facilities.
E170Terminology Relating to Radiation Measurements and
1.2 The electron beam energy range covered in this practice
Dosimetry
is between 300 keV and 25 MeV, although there are some
E2232Guide for Selection and Use of Mathematical Meth-
discussions for other energies.
ods for Calculating Absorbed Dose in Radiation Process-
1.3 Dosimetry is only one component of a total quality
ing Applications
assurance program for adherence to good manufacturing prac- E2303Guide for Absorbed-Dose Mapping in Radiation
tices used in radiation processing applications. Other measures
Processing Facilities
besides dosimetry may be required for specific applications F1355GuideforIrradiationofFreshAgriculturalProduceas
such as health ca
...

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