This document specifies the test method for the determination of total electrical conductivity of conductive fine ceramics by the DC (direct current) four-terminal method. The test method applies to conductive fine ceramics which have an ionic transference number of 0,01 or less. The applicable conductivity range is from 1 S cm−1 to 1 000 S cm−1 and the temperature range is up to 1 000 °C. The values expressed in the test method are in accordance with the International System of Units (SI). This document is intended for industrial product quality control and material development of conductive fine ceramics used in electrodes, e.g. fuel cells, batteries and water electrolysis.

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This document specifies a test method for determining the polytypes and their ratios in silicon carbide (SiC) wafers or bulk crystals using ultraviolet photoluminescence (UVPL) imaging. The range of SiC is limited to semiconductor SiC doped with nitrogen and boron to have a deep acceptor level and a shallow donor level, respectively. The SiC wafers or bulk crystals discussed in this document typically show electrical resistivities ranging from 10−3 ohm · cm to 10−2 ohm · cm, applicable to power electronic devices. This method is applicable to the SiC-crystal 4H, 6H and 15R polytypes that contain boron and nitrogen as acceptor and donor, respectively, at concentrations that produce donor-acceptor pairs (DAPs) to generate UVPL. In 4H-SiC the boron and nitrogen concentrations typically range from 1016 cm−3 to 1018 cm−3. Semi-insulating SiC is not of concern because it usually contains minimal boron and nitrogen; therefore deep level cannot be achieved.

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This document specifies a method for use of a gonio-spectrofluorometer to measure internal quantum efficiency, external quantum efficiency, absorptance, luminescent radiance factor and relative fluorescence spectrum of ceramic phosphor powders which are used in white light-emitting diodes (LEDs) and emit visible light when excited by UV or blue light.

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This document specifies a method of measuring piezoelectric properties of piezoelectric fine ceramics and other piezoelectric devices under high-temperature conditions, where the electromechanical coupling coefficient is determined based on measurements of resonance/antiresonance frequencies using impedance analysers.

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This document specifies a method of measuring piezoelectric properties of piezoelectric fine ceramics and other piezoelectric devices. It applies to electrical transient response methods for evaluating the piezoelectric properties of piezoelectric fine ceramics resonators under high vibration levels.

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ISO 19622:2018 specifies how to measure the piezoelectric constant d33 of piezoelectric ceramics using a direct quasi-static method (d33 meter method, Berlincourt method).

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ISO 20351:2017 specifies a method of absolute measurement (using an integrating sphere) of internal quantum efficiency of phosphor powders which are excited by UV or blue light and emit visible light, and which are used for white light-emitting diodes (LEDs). ISO 20351:2017 can be adopted for the measurement of phosphors used in non-white LEDs, for example, green, orange, pink or purple LEDs.

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ISO 17859:2015 specifies the measurement method of piezoelectric strain at high electric field for high power piezoelectric devices. ISO 17859:2015 is intended to be used to determine the piezoelectric strain coefficient of the materials by measuring strain vs. electric field: ? applied electric field: 0 to 2 MV/m; ? frequency of electric field: 0,1 to 1 Hz.

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ISO 11894-1:2013 describes a test method for the determination of ionic conductivity of oxide-ion-conducting solid electrolytes by the 4-terminal method with alternating current (AC 4-terminal method). ISO 11894-1:2013 applies to solid electrolytes which have oxide ionic transference numbers higher than 0,99. The applicable conductivity range shall be 1 to 1,000 S m−1. Values expressed in this International Standard are in accordance with the International System of Units (SI).

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