ASTM F466-79(1992)

Test Method for Small-Signal Scattering Parameters of Low-Power Transistors in the 0.2 to 2.0 GHZ Frequency Range (Withdrawn 1997)

General Information

• Status: Withdrawn
• Withdrawal Date: 09-Jun-1997
• ICS: 31.080.30 - Transistors
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.11 - Nuclear and Space Radiation Effects

Standards Content (Sample)

ASTM F4bb 79 m 0759510 0512250 238 m
Designation: F 466 - 79 (Reapproved 1992)
Standard Test Method for
Small-Signal Scattering Parameters of Low-Power Transistors
in the 0.2 to 2.0-GHz Frequency Range’
This standard is issued under the fixed designation F 466; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope parameters. A capital S is used when refemng to the entire
matrix (for example, S matrix), and a lowercase s is used
1.1 This test method covers the measurement of the scat-
when referring to individual elements of the matrix (for
tering parameters of transistors operating under small-signal
example, s, I, s2,, etc.).
conditions at power levels low enough to permit continuous
3.2.1. 1 In the symbols for the individual S parameters, the
operation at safe junction temperatures without the use of
first digit of the subscript indicates the port (pair of termi-
elaborate heat sinks. It is generally applicable in the frequency
nais) at which the signal is to be read with respect to the
range between 0.2 and 2.0 GHz.
signal incident on the port indicated by the second digit. The
1.2 Procedures are given for the use of manual measuring
1 and 2 are used to designate the input and output
numbers
equipment.
S parameters that describe a
ports, respectively. The four
1.3 Mathematical transformations for converting scatter-
two-port network are defined as follows:
ing parameters to h, y, or 2 parameters are listed in Appendix
(I) The input reflection coefficient, sI,, is the complex
x1.
ratio of the signal reflected from the input terminals of the
1.4 This standard does not purport to address all of the
device under test (forward VR, C$R, (see Fig. 1)) to the signal
safety problems, if any, associated with its use. It is the
incident on the input terminals (forward V,, (see Fig. 1))
responsibility of the user of this standard to establish appro-
when the source and terminating resistances are each equal
priute safetv and health practices und determine the applica-
to the reference impedance (4 in Fig. I).
bility of regulatory limitations prior to use.
(2) The output reflection coefficient, s22, is the complex
ratio of the signal reflected from the output terminals of the
2. Referenced Document
device under test (reverse VR, C$R (see Fig. i)) to the signal
2.1 ASTM Standard:
incident on the output terminals (the applied signal, VD, 4R
E 1 Specification for ASTM Thermometers2
(see Fig. 1) is incident on the output terminals) when the
source resistance and the termination at the input of the
3. Terminology
device under test are each equal to the reference impedance
(R, in Fig. 1).
3.1 Description of Terms Specific to This Standard:
(3) The forward transmission coefficient, s21, is the com-
3.1,l scattering parameters-For linear two-port net-
of the signal transmitted through the device under
plex ratio
works terminated at input and output by the same reference
test from input to output terminals (forward VT, dT (see Fig.
impedance, scattering parameters are complex numbers that
i)) to the signal incident on the input terminals (forward V,,
describe the relative magnitude and phase of the reflected
4, (see Fig. 1)) when the source and terminating resistances
signals VR and $R (see Fig. 1) and transmitted signals VT and
are each equal to the reference impedance (& in Fig. 1).
$T (see Fig. 1) with respect to signais applied to the input and
..
(4) The reverse transmission coefficient, sI2, is the com-
output terminals of the network, V, and bD (see Fig. 1).
plex ratio of the signal transmitted through the device from
3.1.1.1 Discussion-Although the most commonly used
output to input terminals (reverse V,, @T (see Fig. 1) to the
reference impedance is 50 SI, other values may be used. The
signal incident on the output terminals (the applied signal,
reference impedance must be known to determine the input
V,, $D (see Fig. 1) is incident on the output terminals) when
and output impedances of the device under test and to
the source resistance and the termination at the input to the
convert scattering parameters by h, y, or 2 parameters.
device under test are each equal to the reference impedance
3.1.1.2 transistors-Can be considered linear networks if
(R, in Fig. 1).
measurements are made under small-signal conditions.
3.2 Symbols:
4. Summary of Test Method
3.2.1 S-The symbol S is used to designate the scattering
4.1 Scattering parameters of transistors are determined by
placing the transistor in cascade with a transmission line that
is terminated in its characteristic impedance, generally 50 Q,
1 This test method is under the jurisdiction of ASTM Committee F-1 on
Electronics,
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