ASTM F996-11

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

SIGNIFICANCE AND USE
The electrical properties of gate and field oxides are altered by ionizing radiation. The method for determining the dose delivered by the source irradiation is discussed in Practices E666, E668, E1249, and Guide E1894. The time dependent and dose rate effects of the ionizing radiation can be determined by comparing pre- and post-irradiation voltage shifts, ΔVot and ΔVit. This test method provides a means for evaluation of the ionizing radiation response of MOSFETs and isolation parasitic MOSFETs.
The measured voltage shifts, ΔVot and ΔVit, can provide a measure of the effectiveness of processing variations on the ionizing radiation response.
This technique can be used to monitor the total-dose response of a process technology.
SCOPE
1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET. , , The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, ΔVINV into voltage shifts due to oxide trapped charge, ΔVot and interface traps, ΔVit. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region.
1.2 Procedures are given for measuring the MOSFET subthreshold current-voltage characteristics and for the calculation of results.
1.3 The application of this test method requires the MOSFET to have a substrate (body) contact.  
1.4 Both pre- and post-irradiation MOSFET subthreshold source or drain curves must follow an exponential dependence on gate voltage for a minimum of two decades of current.
1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 31-Dec-2010
• ICS: 31.080.30 - Transistors
• Technical Committee: F01 - Electronics
• Drafting Committee: F01.11 - Nuclear and Space Radiation Effects

Relations

• Replaces: ASTM F996-10 - Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
• Effective Date: 01-Jan-2011
• Replaced By: ASTM F996-11(2018) - Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics (Withdrawn 2023)
• Effective Date: 01-Mar-2018
• Referred By: ASTM F1892-12(2018) - Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
• Effective Date: 01-Jan-2011

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation: F996 − 11
Standard Test Method for
Separating an Ionizing Radiation-Induced MOSFET
Threshold Voltage Shift Into Components Due to Oxide
Trapped Holes and Interface States Using the Subthreshold
1
Current–Voltage Characteristics
ThisstandardisissuedunderthefixeddesignationF996;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginal
adoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscript
epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 1.6 This standard does not purport to address all of the
safety concerns, if any, associated with its use. It is the
1.1 This test method covers the use of the subthreshold
responsibility of the user of this standard to establish appro-
charge separation technique for analysis of ionizing radiation
priate safety and health practices and determine the applica-
degradation of a gate dielectric in a metal-oxide-
bility of regulatory limitations prior to use.
semiconductor-field-effect transistor (MOSFET) and an isola-
2,3,4
tion dielectric in a parasitic MOSFET. The subthreshold
2. Referenced Documents
technique is used to separate the ionizing radiation-induced
5
2.1 ASTM Standards:
inversion voltage shift, ∆V into voltage shifts due to oxide
INV
E666Practice for CalculatingAbsorbed Dose From Gamma
trapped charge, ∆V and interface traps, ∆V . This technique
ot it
or X Radiation
usesthepre-andpost-irradiationdraintosourcecurrentversus
E668 Practice for Application of Thermoluminescence-
gate voltage characteristics in the MOSFET subthreshold
Dosimetry (TLD) Systems for Determining Absorbed
region.
DoseinRadiation-HardnessTestingofElectronicDevices
1.2 Procedures are given for measuring the MOSFET sub-
E1249Practice for Minimizing Dosimetry Errors in Radia-
thresholdcurrent-voltagecharacteristicsandforthecalculation
tionHardnessTestingofSiliconElectronicDevicesUsing
of results.
Co-60 Sources
E1894Guide for Selecting Dosimetry Systems for Applica-
1.3 The application of this test method requires the MOS-
tion in Pulsed X-Ray Sources
FET to have a substrate (body) contact.
1.4 Both pre- and post-irradiation MOSFET subthreshold
3. Terminology
source or drain curves must follow an exponential dependence
3.1 Definitions of Terms Specific to This Standard:
on gate voltage for a minimum of two decades of current.
3.1.1 anneal conditions—thecurrentand/orvoltagebiasand
1.5 The values stated in SI units are to be regarded as
temperature of the MOSFET in the time period between
standard. No other units of measurement are included in this
irradiation and measurement.
standard.
3.1.2 doping concentration— n-or p-type doping, is the
concentration of the dopant in the MOSFET channel region
adjacent to the oxide/silicon interface.
1
This test method is under the jurisdiction of ASTM Committee F01 on
3.1.3 Fermi level—this value describes the top of the
Electronics and is the direct responsibility of Subcommittee F01.11 on Nuclear and
collection of electron energy levels at absolute zero tempera-
Space Radiation Effects.
Current edition approved Jan. 1, 2011. Published January 2011. Originally ture.
approved in 1991. Last previous edition approved in 2010 as F996–10. DOI:
3.1.4 intrinsic Fermi level—the energy level that the Fermi
10.1520/F0996-11.
2
level has in the absence of any doping.
McWhorter, P. J. and P. S. Winokur, “Simple Technique for Separating the
Effects of Interface Traps and Trapped Oxide Charge in MOS Transistors,” Applied
3.1.5 inversion current, I —the MOSFETchannel current
INV
Physics Letters, Vol 48, 1986, pp. 133–135.
3 at a gate-source voltage equal to the inversion voltage.
DNA-TR-89-157, Subthreshold Technique for Fixed and Interface Trapped
Charge Separation in Irradiated MOSFETs, available from National Technical
Information Service, 5285 Port Royal Rd., Springfield, VA 22161.
4 5
Saks, N. S., and Anacona, M. G., “Generation of Interface States by Ionizing For referenced ASTM standards, visit the ASTM website, www.astm.org, or
Radiation at 80K Measured by Charge Pumping and Subthreshold Slope contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
Techniques,” IEEE Transactions on Nuclear Science, Vol NS–34 , No. 6, 1987, pp. Standards volume information, refer to the standard’s Document Summary page on
1348–1354. the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1

---------------------- Page: 1 ----------------------
F996 − 11
3.1.6 inversion voltage, V —the gate-source voltage cor- 5. Significance and Use
INV
responding to a surface potential of 2φ .
B
5.1 The electrical properties of gate and field oxides are
3.1.7 irradiation biases—the biases on the gate, drain,
altered by ionizi
...

This document is not anASTM standard and is intended only to provide the user of anASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
Designation:F996–10 Designation: F996 – 11
Standard Test Method for
Separating an Ionizing Radiation-Induced MOSFET
Threshold Voltage Shift Into Components Due to Oxide
Trapped Holes and Interface States Using the Subthreshold
1
Current–Voltage Characteristics
ThisstandardisissuedunderthefixeddesignationF996;thenumberimmediatelyfollowingthedesignationindicatestheyearoforiginal
adoptionor,inthecaseofrevision,theyearoflastrevision.Anumberinparenthesesindicatestheyearoflastreapproval.Asuperscript
epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope
1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation
degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a
, ,
234
parasiticMOSFET. Thesubthresholdtechniqueisusedtoseparatetheionizingradiation-inducedinversionvoltageshift, DV
INV
into voltage shifts due to oxide trapped charge, DV and interface traps, DV . This technique uses the pre- and post-irradiation
ot it
drain to source current versus gate voltage characteristics in the MOSFET subthreshold region.
1.2 Procedures are given for measuring the MOSFET subthreshold current-voltage characteristics and for the calculation of
results.
1.3 The application of this test method requires the MOSFET to have a substrate (body) contact.
1.4 Bothpre-andpost-irradiationMOSFETsubthresholdsourceordraincurvesmustfollowanexponentialdependenceongate
voltage for a minimum of two decades of current.
1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility
of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory
limitations prior to use.
2. Referenced Documents
5
2.1 ASTM Standards:
E666 Practice for Calculating Absorbed Dose From Gamma or X Radiation
E668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in
Radiation-Hardness Testing of Electronic Devices
E1249 Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60
Sources
E1894 Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources
3. Terminology
3.1 Definitions of Terms Specific to This Standard:
3.1.1 anneal conditions—thecurrentand/orvoltagebiasandtemperatureoftheMOSFETinthetimeperiodbetweenirradiation
and measurement.
1
This test method is under the jurisdiction of ASTM Committee F01 on Electronics and is the direct responsibility of Subcommittee F01.11 on Nuclear and Space
Radiation Effects.
Current edition approved May 1, 2010. Published June 2010. Originally approved in 1991. Last previous edition approved in 2003 as F996–98 (2003). DOI:
10.1520/F0996-10.
CurrenteditionapprovedJan.1,2011.PublishedJanuary2011.Originallyapprovedin1991.Lastpreviouseditionapprovedin2010asF996–10.DOI:10.1520/F0996-11.
2
McWhorter, P. J. and P. S. Winokur, “Simple Technique for Separating the Effects of Interface Traps and Trapped Oxide Charge in MOS Transistors,” Applied Physics
Letters, Vol 48, 1986, pp. 133–135.
3
DNA-TR-89-157, Subthreshold Technique for Fixed and Interface Trapped Charge Separation in Irradiated MOSFETs, available from National Technical Information
Service, 5285 Port Royal Rd., Springfield, VA 22161.
4
Saks,N.S.,andAnacona,M.G.,“GenerationofInterfaceStatesbyIonizingRadiationat80KMeasuredbyChargePumpingandSubthresholdSlopeTechniques,” IEEE
Transactions on Nuclear Science, Vol NS–34 , No. 6, 1987, pp. 1348–1354.
5
ForreferencedASTMstandards,visittheASTMwebsite,www.astm.org,[e-mail] Annual Book of ASTM Standards
volume information, refer to the standard’s Document Summary page on the ASTM website.
Copyright ©ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA19428-2959, United States.
1

---------------------- Page: 1 ----------------------
F996 – 11
3.1.2 doping concentration— n-or p-type doping, is the concentration of the dopant in the MOSFET channel region adjacent
to the oxide/silicon interface.
3.1.3 Fermi level—this value describes the top of the collection of electron energy levels at absolute zero temperature.
3.1.4 intrinsic Fermi level—the energy level that the Fermi level has in the absence of any d
...