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ASTM F448M-94

(Test Method)

Test Method for Measuring Steady-State Primary Photocurrent [Metric] (Withdrawn 1999)

Test Method for Measuring Steady-State Primary Photocurrent [Metric] (Withdrawn 1999)

SCOPE
1.1 This test method covers the measurement of steady-state primary photocurrent, pp , generated in semiconductor devices when these devices are exposed to ionizing radiation. These procedures are intended for the measurement of photocurrents greater than 10 -9  A[dot]s/Gy(Si or Ge), in cases for which the relaxation time of the device being measured is less than 25% of the pulse width of the ionizing source. The validity of these procedures for ionizing dose rates as great as 10 Gy(Si or Ge)/s has been established. The procedures may be used for measurements at dose rates as great as 10 10  Gy(Si or Ge)/s; however, extra care must be taken. Above 10 Gy/s the package response may dominate the device response for technologies such as complementary metal-oxide semiconductor, (CMOS)/silicon-on sapphire (SOS). Additional precautions are also required when measuring photocurrents of 10 -9  A[dot]s/Gy(Si or Ge) or lower.  
1.2 Setup, calibration, and test circuit evaluation procedures are also included in the test method.  
1.3 Procedures for lot qualification and sampling are not included in this test method.  
1.4 Because of the variability between device types and in the requirements of different applications, the dose rate range over which any specific test is to be conducted is not given in the test method but must be specified separately.  
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

Status
Withdrawn
Publication Date
31-Dec-1993
ICS
31.260 - Optoelectronics. Laser equipment
Technical Committee
F01 - Electronics
Drafting Committee
F01.11 - Nuclear and Space Radiation Effects
Current Stage
Ref Project

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ASTM F448M-94 - Test Method for Measuring Steady-State Primary Photocurrent [Metric] (Withdrawn 1999)ASTM F448M-94 - Test Method for Measuring Steady-State Primary Photocurrent [Metric] (Withdrawn 1999)
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ASTM F448M-94 - Test Method for Measuring Steady-State Primary Photocurrent [Metric] (Withdrawn 1999)
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ASTM F448M 94 07595LO 0539086 869
AMERICAN SOCIETY FOR TESTING AND MATERIALS
#Tb Designation: F 448M - 94
191 6 Race St. Philadelphia, Pa 191 03
Reprinted from the Annual Book of ASTM Standards. Copyright ASTM
If not listed in the current combined index, will appear in the nexi edition
Standard Test Method for
Measu ring Stead y -S t a t e Primary Photocurrent [Met ri c] '
This standard is issued under the fixed designation F 448M; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
1. Scope drop from 90 to 10 % of its steady-state value.
3.1.2 primary photocurrent-the flow of excess charge
1.1 This test method covers the measurement of steady-
p-n junction due to ionizing radiation
carriers across a
state primary photocurrent, I,,,,, generated in semiconductor
creating electron-hole pairs throughout the device. The
devices when these devices are exposed to ionizing radiation.
charges associated with this current are only those produced
These procedures are intended for the measurement of
in the junction depletion region and in the bulk semicon-
photocurrents greater than A.s/Gy(Si or Ge), in cases
ductor material approximately one diffusion length on either
for which the relaxation time of the device being measured is
side of the depletion region (or to the end of the semicon-
less than 25 % of the pulse width of the ionizing source. The
ductor material, whichever is shorter).
validity of these procedures for ionizing dose rates as great as
3.1.3 pulse width-the time a pulse-amplitude remains
108Gy(Si or Ge)/s has been established. The procedures may
above 50 % of its maximum value.
be used for measurements at dose rates as great as 1O'O Gy(Si
3.1.4 rise time-the time required for a signal pulse to rise
or Ge)/s; however, extra care must be taken. Above 1OSGy/s
from 10 to 90 % of its steady-state value.
the package response may dominate the device response for
technologies such as complementary metal-oxide semicon-
4. Summary of Test Method
ductor, (CMOS)/silicon-on sapphire (SOS). Additional pre-
4.1 In this test method, the test device is irradiated in the
cautions are also required when measuring photocurrents of
A.s/Gy(Si or Ge) or lower. primary electron beam of a linear accelerator. Both the
1.2 Setup, calibration, and test circuit evaluation proce- irradiation pulse and junction current (Fig. 1) are displayed
dures are also included in the test method. on an oscilloscope and recorded photographically. Place-
1.3 Procedures for lot qualification and sampling are not ment of a thin, low atomic number (Zr 13) scattering plate
included in this test method. in the beam is recommended to improve beam uniformity;
of the variability between device types and in the consequences of the use of a scattering plate relating to
1.4 Because
the requirements of different applications, the dose rate interference from secondary electrons are described. The
range over which any specific test is to be conducted is not total dose is measured by an auxiliary dosimeter. The
given in the test method but must be specified separately. steady-state values of the dose rate and junction current and
1.4 This standard does not purport to address all of the the relaxation time of the junction current are determined
safety concerns, any, associated with its use. It is the from the photographs and total dose.
responsibility of the user of this standard to establish appro- 4.2 In special cases, these parameters may be measured at
priate safety and health practices and determine the applica- a single dose rate under one bias condition if the test is
designed to generate information for such a narrow applica-
bility of regulatory limitations prior to use.
tion. The preferred approach, described in this test method,
2. Referenced Documents is to characterize the radiation response of a device in a way
that is useful to many different applications. For this
2.1 ASTM Standards:
purpose, the response to pulses at a number of different dose
E 668 Practice for the Application of Thermolumi-
rates is required. Because of the bias dependence of the
nescence-Dosimetry (TLD) Systems for Determining
depletion volume, it is possible that more than one bias level
Absorbed Dose in Radiation-Hardness Testing of Elec-
will be required during the photocurrent measurements.
tronic Devices2
F 526 Test Method for Measuring Dose for Use in Linear
5. Significance and Use
Accelerator Pulsed Radiation Effects Tests3
5.1 The steady-state photocurrent of a simple p-n junction
diode is a directly measurable quantity that can be directly
3. Terminology
related to device response over a wide range of ionizing
3.1 Definitions:
radiation. For
...

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PN Junction Diode—The steady-state photocurrent of a simple p-n junction diode is a directly measurable quantity that can be directly related to device response over a wide range of ionizing radiation. For more complex devices the junction photocurrent may not be directly related to device response.
Zener Diode— In this device, the effect of the photocurrent on the Zener voltage rather than the photocurrent itself is usually most important. The device is most appropriately tested while biased in the Zener region. In testing Zener diodes or precision voltage regulators, extra precaution must be taken to make certain the photocurrent generated in the device during irradiations does not cause the voltage across the device to change during the test.
Bipolar Transistor—As device geometries dictate that photocurrent from the base-collector junction be much greater than current from the base-emitter junction, measurements are usually made only on the collector-base junction with emitter open; however, sometimes, to obtain data for computer-aided circuit analysis, the emitter-base junction photocurrent is also measured.
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1.1 This test method covers the measurement of steady-state primary photocurrent, Ipp, generated in semiconductor devices when these devices are exposed to ionizing radiation. These procedures are intended for the measurement of photocurrents greater than 10−9 A·s/Gy(Si or Ge), in cases for which the relaxation time of the device being measured is less than 25 % of the pulse width of the ionizing source. The validity of these procedures for ionizing dose rates as great as 108Gy(Si or Ge)/s has been established. The procedures may be used for measurements at dose rates as great as 1010Gy(Si or Ge)/s; however, extra care must be taken. Above 108Gy/s, the package response may dominate the device response for any device. Additional precautions are also required when measuring photocurrents of 10−9 A·s/Gy(Si or Ge) or lower.
1.2 Setup, calibration, and test circuit evaluation procedures are also included in this test method.
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The steady-state photocurrent of a simple p-n junction diode is a directly measurable quantity that can be directly related to device response over a wide range of ionizing radiation. For more complex devices the junction photocurrent may not be directly related to device response.
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1.1 This test method covers the measurement of steady-state primary photocurrent, Ipp, generated in semiconductor devices when these devices are exposd to ionizing radiation. These procedures are intended for the measurement of photocurrents greater than 10-9 A-s/Gy(Si or Ge), in cases for which the relaxation time of the device being measured is less than 25% of the pulse width of the ionizing source. The validity of these procedures for ionizing dose rates as great as 108Gy(Si or Ge)/s has been established. The procedures may be used for measurements at dose rates as great as 1010Gy(Si or Ge)/s; however, extra care must be taken. Above 108Gy/s the package response may dominate the device response for technologies such as complementary metal-oxide semiconductor, (CMOS)/silicon-on sapphire (SOS). Additional precautions are also required when measuring photocurrents of 10-9 A-s/Gy(Si or Ge) or lower.
1.2 Setup, calibration, and test circuit evaluation procedures are also included in this test method.
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1.4 The values state in International System of Units (SI) are to be regarded as the standard. No other units of measurement are included in this standard.
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1.2 This practice applies to all types of pipe material, all types of construction, and pipe shapes.  
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Standard Test Methods for Calibration of Non-Concentrator Photovoltaic Non-Primary Reference Cells

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5.1 It is the intent of these test methods to provide a recognized procedure for calibrating, characterizing, and reporting the calibration data for non-primary photovoltaic reference cells that are used during photovoltaic device performance measurements.  
5.2 The electrical output of photovoltaic devices is dependent on the spectral content of the source illumination and its intensity. To make accurate measurements of the performance of photovoltaic devices under a variety of light sources, it is necessary to account for the error in the short-circuit current that occurs if the relative spectral response of the reference cell is not identical to the spectral response of the device under test. A similar error occurs if the spectral irradiance distribution of the test light source is not identical to the desired reference spectral irradiance distribution. These errors are quantified with the spectral mismatch parameter M (Test Method E973).  
5.2.1 Test Method E973 requires four quantities for spectral mismatch calculations:
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5.2.1.2 The quantum efficiency of the calibration source device (required as part of its calibration),
Note 1: See 10.10 of Test Method E1021 for the identity that converts spectral responsivity to quantum efficiency.
5.2.1.3 The spectral irradiance of the light source (measured with the spectral irradiance measurement equipment), and,
5.2.1.4 The reference spectral irradiance distribution to which the calibration source device was calibrated (see G173).  
5.2.2 Temperature Corrections—Test Method E973 provides means for temperature corrections to short-circuit current using the partial derivative of quantum efficiency with respect to temperature.  
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SCOPE
1.1 These test methods cover calibration and characterization of non-primary terrestrial photovoltaic reference cells to a desired reference spectral irradiance distribution. The recommended physical requirements for these reference cells are described in Specification E1040. Reference cells are principally used in the determination of the electrical performance of a photovoltaic device.  
1.2 Non-primary reference cells are calibrated indoors using simulated sunlight or outdoors in natural sunlight by reference to a previously calibrated reference cell, which is referred to as the calibration source device.  
1.2.1 The non-primary calibration will be with respect to the same reference spectral irradiance distribution as that of the calibration source device.  
1.2.2 The calibration source device may be a primary reference cell calibrated in accordance with Test Method E1125, or a non-primary reference cell calibrated in accordance with these test methods.  
1.2.3 For the special case in which the calibration source device is a primary reference cell, the resulting non-primary reference cell is also referred to as a secondary reference cell.  
1.3 Non-primary reference cells calibrated according to these test methods will have the same radiometric traceability as that of the calibration source device. Therefore, if the calibration source device is traceable to the World Radiometric Reference (WRR, see Test Method E816), the resulting secondary reference cell will also be traceable to the WRR.  
1.4 These test methods apply only to the calibration of a photovoltaic cell that demonstrates a linear short-circuit current versus irradiance characteristic over its intended range of use, as defined in Test Method E1143.  
1.5 These test methods apply only to the calibration of a photovoltaic cell that has been fabricated using a single photovoltaic junction.  
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SIGNIFICANCE AND USE
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1.2 Setup, calibration, and test circuit evaluation procedures are also included in this test method.  
1.3 Because of the variability between device types and in the requirements of different applications, the dose rate range over which any specific test is to be conducted is not given in this test method but must be specified separately.  
1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.  
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.  
1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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Standard Practice for Laser Technologies for Measurement of Cross-Sectional Shape of Pipeline and Conduit by Non-Rotating Laser Projector and CCTV Camera System

SIGNIFICANCE AND USE
4.1 Laser profiling assessment is a quality control tool for identifying and quantifying deformation, physical damage, and other pipe anomalies after installation, providing means and methods for determining the quality of workmanship and compliance with project specifications. Laser profiling can be used for:  
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4.2 A laser profile pre-acceptance and condition assessment survey provides significant information in a clear and concise manner, including but not limited to graphs and still frame digital images of pipe condition prior to acceptance, thereby providing objective data on the installed quality and percentage ovality, deformation, deflection or deviation, that is often not possible from an inspection by either a mandrel or CCTV only survey.
SCOPE
1.1 Laser profiling is a non-contact inspection method used to create a pipe wall profile and internal measurement using a standard CCTV pipe inspection system, 360 degree laser light projector, and special geometrical profiling software. This practice covers the procedure for the measurement to determine any deviation of the internal surface of installed pipe compared to the design. The measurements may be used to verify that the installation has met design requirements for acceptance or to collect data that will facilitate an assessment of the condition of pipe or conduit due to structural deviations or deterioration. This standard practice provides minimum requirements on means and methods for laser profiling to meet the needs of engineers, contractors, owners, regulatory agencies, and financing institutions.  
1.2 This practice applies to all types of pipe material, all types of construction, and pipe shapes.  
1.3 This practice applies to depressurized and gravity flow storm sewers, drains, sanitary sewers, and combined sewers with diameters from 6 to 72 in. (150 and 1800 mm).  
1.4 This standard does not include all aspects of pipe inspection, such as joint gaps, soil/water infiltration in joints, cracks, holes, surface damage, repairs, corrosion, and structural problems associated with these conditions.  
1.5 The values stated in inch-pound units are to be regarded as standard. The values given in parentheses are mathematical conversions to SI units that are provided for information only and are not considered standard.  
1.6 The profiling process may require physical access to lines, entry manholes, and operations along roadways that may include safety hazards.  
1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. There are no safety hazards specifically, however, associated with the use of the laser ring profiler specified (listed and labeled as specified in 1.3).  
1.8 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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ASTM
ASTM F3095-17a(Practice)
Standard Practice for Laser Technologies for Direct Measurement of Cross Sectional Shape of Pipeline and Conduit by Rotating Laser Diodes and CCTV Camera System

SIGNIFICANCE AND USE
4.1 Laser profiling assessment is a quality control tool for identifying and quantifying deformation, physical damage, and other pipe anomalies after installation, providing means and methods for determining the quality of workmanship and compliance with project specifications. Laser profiling capabilities include:  
4.1.1 Measurement of the structural shape, cross sectional area and defects;  
4.1.2 Collection of data needed for pipe rehabilitation or replacement design; and  
4.1.3 Post rehabilitation, replacement or new construction workmanship verification.  
4.2 A laser profile pre-acceptance and condition assessment survey provides significant information in a clear and concise manner, including but not limited to graphs and still frame digital images of pipe condition prior to acceptance, thereby providing objective data on the installed quality and percentage ovality, or degree of deformation, deflection or deviation, that is often not possible from an inspection by either a mandrel or only CCTV.
SCOPE
1.1 This practice covers the procedure for the post installation verification and acceptance of buried pipe deformation using a visible rotating laser light diode(s), a pipeline and conduit inspection analog or digital CCTV camera system and image processing software. The combination CCTV pipe inspection system, with cable distance counter or onboard distance encoder, rotating laser light diode(s) and ovality measurement software shall be used to perform a pipe measurement and ovality confirmation survey, of new or existing pipelines and conduits as directed by the responsible contracting authority. This standard practice provides minimum requirements on means and methods for laser profiling to meet the needs of engineers, contractors, owners, regulatory agencies, and financing institutions.  
1.2 This practice applies to all types of material, all types of construction, or shape.  
1.3 This practice applies to gravity flow storm sewers, drains, sanitary sewers, and combined sewers with diameters from 6 to 72 in. (150 to 1800 mm).  
1.4 The Laser Light Diode(s) shall be tested, labeled and certified to conform to US requirements for CDRH Class 2 or below (not considered to be hazardous) laser products or certified to conform to EU requirements for Class 2M or below laser products as per IEC 60825-1, or both.  
1.5 The profiling process may require physical access to lines, entry manholes and operations along roadways that may include safety hazards.  
1.6 This practice includes inspection requirements for determining pipeline and conduit ovality only and does not include all the required components of a complete inspection. The user of this practice should consider additional items outside this practice for inspection such as joint gap measurement, soil/water infiltration, crack and hole measurement, surface damage evaluation, evaluation of any pipeline repairs, and corrosion evaluation.  
1.7 This standard practice does not address limitations in accuracy due to improper lighting, dust, humidity, fog, moisture on pipe walls or horizontal/vertical offsets. Care should be taken to limit environmental factors in the pipeline that affect accuracy of the inspection.  
1.8 The values stated in inch-pound units are to be regarded as standard. The values given in parentheses are mathematical conversions to SI units that are provided for information only and are not considered standard.  
1.9 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. There are no safety hazards specifically, however, associated with the use of the laser profiler specified (listed and labeled as specified in 1.3).  
1.10 This international standard was developed i...

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