ASTM F1723-02

Standard Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy (Withdrawn 2003)

SCOPE
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This practice recommends procedures for sampling polycrystalline silicon rods and growing single crystals from these samples by the float-zone technique. The resultant single crystal ingots are analyzed by spectrophotometric methods to determine the trace impurities in polysilicon. These trace impurities are acceptor (usually boron or aluminum, or both), donor (usually phosphorus or arsenic, or both), and carbon impurities.
1.2 The useful range of impurity concentration covered by this practice is 0.002 to 100 parts/billion atomic (ppba) for acceptor and donor impurities, and 0.05 to 5 parts/million atomic (ppma) for carbon impurity. These impurities are analyzed in the ingot samples by infrared or photoluminescence spectroscopy.
1.3 This practice is applicable only to evaluation of polysilicon ingots grown by a method that utilizes a slim silicon rod (filament) upon which polycrystalline silicon is deposited.
1.4 This practice uses hot acid to etch away the surface of the polysilicon rod. The etchant is potentially harmful and must be handled in an acid exhaust fume hood with utmost care at all times. Hydrofluoric acid solutions particularly are hazardous and should not be used by anyone who is not familiar with the specific preventative measures and first aid treatments given in the appropriate Material Safety Data Sheet.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Withdrawn
• Publication Date: 09-Jan-2002
• Withdrawal Date: 09-May-2003
• ICS: 71.040.50 - Physicochemical methods of analysis
• Technical Committee: F01 - Electronics

Relations

• Replaces: ASTM F1723-96 - Standard Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy
• Effective Date: 10-Jan-2002

Standards Content (Sample)

NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 1723 – 02
Standard Practice for
Evaluation of Polycrystalline Silicon Rods by Float-Zone
1
Crystal Growth and Spectroscopy
This standard is issued under the fixed designation F 1723; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
INTRODUCTION
This practice replaces Method F 574 and Practice F 41. Method F 574 and Practice F 41 are
obsolete, describing multi-pass zoning and vacuum zoning practices, and resistivity measurements for
the calculation of impurity concentrations. One pass zoning and analysis by spectrophotometric
techniques to identify and quantify the acceptor and donor elements have replaced the obsolete
methods. Expanded sampling plans, the use of reference specimens, and practices for sampling of
ingots are improvements made to these standards.
1. Scope priate safety and health practices and determine the applica-
bility of regulatory limitations prior to use.
1.1 This practice recommends procedures for sampling
polycrystalline silicon rods and growing single crystals from
2. Referenced Documents
these samples by the float-zone technique. The resultant single
2.1 ASTM Standards:
crystal ingots are analyzed by spectrophotometric methods to
D 5127 Guide for Ultra Pure Water Used in the Electronics
determine the trace impurities in polysilicon. These trace
2
and Semiconductor Industry
impurities are acceptor (usually boron or aluminum, or both),
F 26 Test Methods for Determining the Orientation of a
donor (usually phosphorus or arsenic, or both), and carbon
3
Semiconductive Single Crystal
impurities.
F 42 Test Methods for Conductivity Type of Extrinsic
1.2 The useful range of impurity concentration covered by
3
Semiconducting Materials
this practice is 0.002 to 100 parts/billion atomic (ppba) for
F 397 Test Method for Resistivity of Silicon Bars Using a
acceptor and donor impurities, and 0.05 to 5 parts/million
3
Two-Point Probe
atomic (ppma) for carbon impurity. These impurities are
F 723 Practice for Conversion Between Resistivity and
analyzed in the ingot samples by infrared or photolumines-
Dopant Density for Boron-Doped, Phosphorus-Doped, and
cence spectroscopy.
3
Arsenic-Doped Silicon
1.3 This practice is applicable only to evaluation of poly-
3
F 1241 Terminology of Silicon Technology
silicon ingots grown by a method that utilizes a slim silicon rod
F 1389 Test Methods for Photoluminescence Analysis of
(filament) upon which polycrystalline silicon is deposited.
3
Single Crystal Silicon for III-V Impurities
1.4 This practice uses hot acid to etch away the surface of
F 1391 Test Method for Substitutional Carbon Content of
the polysilicon rod. The etchant is potentially harmful and must
3
Silicon by Infrared Absorption
be handled in an acid exhaust fume hood with utmost care at all
F 1630 Test Method for Low Temperature FT-IR Analysis
times. Hydrofluoric acid solutions particularly are hazardous
3
of Single Crystal Silicon for III-V Impurities
and should not be used by anyone who is not familiar with the
F 1725 Guide for Analysis of Crystallographic Perfection of
specific preventative measures and first aid treatments given in
3
Silicon Ingots
the appropriate Material Safety Data Sheet.
2.2 Federal Standards:
1.5 This standard does not purport to address all of the
Federal Standard 209E Airborne Particulate Cleanliness
safety concerns, if any, associated with its use. It is the
4
Classes in Cleanrooms and Clean Zones
responsibility of the user of this standard to establish appro-
2.3 SEMI Standards:
1
This practice is under the jurisdiction of ASTM Committee F01 on Electronics
2
and is the direct responsibility of Subcommittee F01.06 on Silicon Materials and Annual Book of ASTM Standards, Vol 11.01.
3
Process Control. Annual Book of ASTM Standards, Vol 10.05.
4
Current edition approved Jan. 10, 2002. Published March 2002. Originally Available from Superintendent of Documents, U.S. Government Printing
published as F 1723–96. Last previous edition F 1723–96. Office, Washington, DC 20402.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
1

---------------------- Page: 1 ----------------------
NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
F 1723
5
C 3.42 Specification for Argon 4.5 Sections of the ingot are selected for measurement of
5
C 28 Specifications and Guidelines for Hydrofluoric Acid acceptor, donor, and carbon content, according to the indi-
5
C 35 Specifications and Guidelin
...