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ASTM F1263-11(2019)

(Guide)

Standard Guide for Analysis of Overtest Data in Radiation Testing of Electronic Parts

Standard Guide for Analysis of Overtest Data in Radiation Testing of Electronic Parts

SIGNIFICANCE AND USE
5.1 Overtesting should be done when (a) testing by variables is impractical because of time and cost considerations or because the probability distribution of stress to failure cannot be estimated with sufficient accuracy, and (b) an unrealistically large number of parts would have to be tested at the specification stress for the necessary confidence and survival probability.
SCOPE
1.1 This guide covers the use of overtesting in order to reduce the required number of parts that must be tested to meet a given quality acceptance standard. Overtesting is testing a sample number of parts at a stress level higher than their specification stress in order to reduce the amount of necessary data taking. This guide discusses when and how overtesting may be applied to forming probabilistic estimates for the survival of electronic piece parts subjected to radiation stress. Some knowledge of the probability distribution governing the stress-to-failure of the parts is necessary, although exact knowledge may be replaced by over-conservative estimates of this distribution.  
1.2 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

General Information

Status
Published
Publication Date
30-Nov-2019
ICS
31.020 - Electronic components in general
Technical Committee
E10 - Nuclear Technology and Applications
Drafting Committee
E10.07 - Radiation Dosimetry for Radiation Effects on Materials and Devices
Current Stage
Ref Project

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ASTM F1263-11(2019) - Standard Guide for Analysis of Overtest Data in Radiation Testing of Electronic PartsASTM F1263-11(2019) - Standard Guide for Analysis of Overtest Data in Radiation Testing of Electronic Parts
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ASTM F1263-11(2019) - Standard Guide for Analysis of Overtest Data in Radiation Testing of Electronic Parts
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This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the
Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
Designation: F1263 − 11 (Reapproved 2019)
Standard Guide for
Analysis of Overtest Data in Radiation Testing of Electronic
Parts
This standard is issued under the fixed designation F1263; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope 3.1.2 rejection confidence—the probability, R, that a lot will
be rejected based on destructive tests of selected specimens if
1.1 This guide covers the use of overtesting in order to
more than a specified fraction, P, of the parts in the lot will fail
reduce the required number of parts that must be tested to meet
in actual service.
a given quality acceptance standard. Overtesting is testing a
sample number of parts at a stress level higher than their 3.1.3 Discussion of Preceding Terms—Strictly speaking,
specification stress in order to reduce the amount of necessary most lot acceptance tests (be they testing by attributes or
data taking. This guide discusses when and how overtesting variables) do not guarantee survivability, but rather that infe-
may be applied to forming probabilistic estimates for the rior lots, where the survival probability of the parts is less than
survival of electronic piece parts subjected to radiation stress. probability, P, will be rejected with confidence, C. In order to
Some knowledge of the probability distribution governing the infer a true confidence, it would require a Bayes Theorem
stress-to-failure of the parts is necessary, although exact calculation. In many cases, the distinction between confidence
knowledge may be replaced by over-conservative estimates of and rejection confidence is of little practical importance.
this distribution. However, in other cases (typically when a large number of lots
are rejected) the distinction between these two kinds of
1.2 This international standard was developed in accor-
confidence can be significant. The formulas given in this guide
dance with internationally recognized principles on standard-
apply whether one is dealing with confidence or rejection
ization established in the Decision on Principles for the
confidence.
Development of International Standards, Guides and Recom-
mendations issued by the World Trade Organization Technical
4. Summary of Guide
Barriers to Trade (TBT) Committee.
4.1 This guide is intended to primarily apply to sampling by
2. Referenced Documents
attribute plans typified by Lot Tolerance Percent Defective
(LTPD) tables given in MIL-PRF 38535 and MIL-PRF 19500,
2.1 Military Standards:
and contains the following:
MIL-PRF 19500 Semiconductor Devices, General Specifi-
4.1.1 An equation for estimating the effectiveness of over-
cations for
testing in terms of increased probability of survival,
MIL-PRF 38535 Integrated Circuits (Microcircuit Manufac-
4.1.2 An equation for the required amount of overtesting
turing)
given a necessary survival probability, and
3. Terminology 4.1.3 Cautions and limitations on the method.
3.1 Definitions of Terms Specific to This Standard:
5. Significance and Use
3.1.1 confidence—the probability, C, that at least a fraction,
5.1 Overtesting should be done when (a) testing by vari-
P, of the electronic parts from a test lot will survive in actual
ables is impractical because of time and cost considerations or
service; since radiation testing of electronic parts is generally
because the probability distribution of stress to failure cannot
destructive, this probability must be calculated from tests on
be estimated with sufficient accuracy, and (b) an unrealistically
selected specimens from the lot.
large number of parts would have to be tested at the specifi-
cation stress for the necessary confidence and survival prob-
This guide is under the jurisdiction of ASTM Committee E10 on Nuclear
ability.
Technology and Applications and is the direct responsibility of Subcommittee
E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices.
6. Interferences
Current edition approved Dec. 1, 2019. Published December 2019. Originally
approved in 1989. Last previous edition approved in 2011 as F1263 – 11. DOI:
6.1 Probability Distributions—In overtesting, a knowledge
10.1520/F1263-11R19.
of the probability distribution governing stress to failure is
Available from Standardization Documents Order Desk, Bldg. 4 Section D, 700
Robbins Ave., Philadelphia, PA 19111-5094, Attn: NPODS. required, though it need not be specified with the same
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
F1263 − 11 (2019)
5 ,6
accuracy necessary for testing by variables. For bipolar tran- 7.2 For neutrons, 0.5 is a good estimate of σ (max).
ln
sistors exposed to neutron radiation, the failure mechanism is
7.2.1 Example—Suppose bipolar transistors are tested at a
usually gain degradation and the stress to failure is known to
neutron fluence three times the specification fluence and it is
follow a lognormal distribution. For bipolar transistors ex-
determined that with 90 % confidence, at least 80 % of the
posed to total dose the use of the lognormal distribution is also
transistors will survive the overtest fluence. Then from Eq 1, at
fairly accurate. For more complex electronics and other kinds
the specification fluence, with 90 % confidence, the survival
of radiation stress, the lognormal distribution is widely used in
probability is as follows:
estimating the failure probabilities of electronic piece parts,
¯
P 5 F@F P 1ln 3 /0.5# 5 F 0.8412.20 5 F 3.04 5 0.999,
~ ! ~ ! @ # @ #
S T
and therefore this standard governs the use of a lognormal
distribution. However, caution should be exercised when the
where we used the following facts governing the normal
probability distribution of stress to failure is not well estab-
distribution:
lished. Nevertheless, even if the lognormal distribution does
Standard probability tables such as those shown in M.G.
not strictly apply, the equations given in Section 7 will hold as
Natrella, “Experimental Stat
...

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4.1 Absorbed dose in a material is an important parameter that can be correlated with radiation effects produced in electronic components and devices that are exposed to ionizing radiation. Reasonable estimates of this parameter can be calculated if knowledge of the source radiation field (that is, energy spectrum and particle fluence) is available. Sufficiently detailed information about the radiation field is generally not available. However, measurements of absorbed dose with passive dosimeters in a radiation test facility can provide information from which the absorbed dose in a material of interest can be inferred. Under certain prescribed conditions, TLDs are quite suitable for performing such measurements.
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4.1 Although Co-60 nuclei only emit monoenergetic gamma rays at 1.17 and 1.33 MeV, the finite thickness of sources, and encapsulation materials and other surrounding structures that are inevitably present in irradiators can contribute a substantial amount of low-energy gamma radiation, principally by Compton scattering (1, 2).3 In radiation-hardness testing of electronic devices this low-energy photon component of the gamma spectrum can introduce significant dosimetry errors for a device under test since the equilibrium absorbed dose as measured by a dosimeter can be quite different from the absorbed dose deposited in the device under test because of absorbed dose enhancement effects (3, 4). Absorbed dose enhancement effects refer to the deviations from equilibrium absorbed dose caused by non-equilibrium electron transport near boundaries between dissimilar materials.  
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4.1 This practice was written primarily to guide test participants in establishing, identifying, maintaining, and using suitable environments for conducting high quality neutron tests. Its development was motivated, in large measure, because inadequate controls in the neutron-effects-test process have, in some past instances, resulted in exposures that have differed by factors of three or more from irradiation specifications. A radiation test environment generally differs from the environment in which the electronics must operate (the operational environment); therefore, a high quality test requires not only the use of a suitable radiation environment, but also control and compensation for contributions to damage that differ from those in the operational environment. In general, the responsibility for identifying suitable test environments to accomplish test objectives lies with the sponsor/user/tester and test specialist part of the team, with the assistance of an independent validator, if available. The responsibility for the establishment and maintenance of suitable environments lies with the facility operator/dosimetrist and test specialist, again with the possible assistance of an independent validator. Additional guidance on the selection of an irradiation facility is provided in Practice F1190.  
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SCOPE
1.1 This practice sets forth requirements to ensure consistency in neutron-induced displacement damage testing of silicon and gallium arsenide electronic piece parts. This requires controls on facility, dosimetry, tester, and communications processes that affect the accuracy and reproducibility of these tests. It provides background information on the technical basis for the requirements and additional recommendations on neutron testing.  
1.2 Methods are presented for ensuring and validating consistency in neutron displacement damage testing of electronic parts such as integrated circuits, transistors, and diodes. The issues identified and the controls set forth in this practice address the characterization and suitability of the radiation environments. They generally apply to reactor sources, accelerator-based neutron sources, such as 14-MeV DT sources, and  252Cf sources. Facility and environment characteristics that introduce complications or problems are identified, and recommendations are offered to recognize, minimize or eliminate these problems. This practice may be used by facility users, test personnel, facility operators, and independent process validators to determine the suitability of a specific environment within a facility and of the testing process as a whole. Electrical measurements are addressed in other standards, such as Guide F980. Additional information on conducting irradiations can be found in Practices E798 and F1190. This practice also may be of use to test sponsors (organizations that establish test specifications or otherwise have a vested interest in the performance of electronics in neutron environments).  
1.3 Methods for the evaluation and control of undesired contributions to damage are discussed in this practice. References to relevant ASTM standards and technical reports are provided. Processes and methods used to arrive at the appropriate test environments and specification levels f...

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ASTM
ASTM F1190-18(Guide)
Standard Guide for Neutron Irradiation of Unbiased Electronic Components

SIGNIFICANCE AND USE
5.1 Semiconductor devices can be permanently damaged by neutrons (1, 2)6. The effect of such damage on the performance of an electronic component can be determined by measuring the component’s electrical characteristics before and after exposure to fast neutrons in the neutron fluence range of interest. The resulting data can be utilized in the design of electronic circuits that are tolerant of the degradation exhibited by that component.  
5.2 This guide provides a method by which the exposure of silicon and gallium arsenide semiconductor devices to neutron irradiation may be performed in a manner that is repeatable and which will allow comparison to be made of data taken at different facilities.  
5.3 For semiconductors other than silicon and gallium arsenide, applicable validated 1-MeV damage functions are not available in codified National standards. In the absence of a validated 1-MeV damage function, the non-ionizing energy loss (NIEL) or the displacement kerma, as a function of incident neutron energy, normalized to the response in the 1 MeV energy region, may be used as an approximation. See Practice E722 for a description of the method used to determine the damage functions in Si and GaAs (3).
SCOPE
1.1 This guide strictly applies only to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation to determine the permanent damage in the components. Validated 1-MeV displacement damage functions codified in National Standards are not currently available for other semiconductor materials.  
1.2 Elements of this guide, with the deviations noted, may also be applicable to the exposure of semiconductors comprised of other materials except that validated 1-MeV displacement damage functions codified in National standards are not currently available.  
1.3 Only the conditions of exposure are addressed in this guide. The effects of radiation on the test sample should be determined using appropriate electrical test methods.  
1.4 This guide addresses those issues and concerns pertaining to irradiations with neutrons.  
1.5 System and subsystem exposures and test methods are not included in this guide.  
1.6 The range of interest for neutron fluence in displacement damage semiconductor testing range from approximately 109 to 1016  1-MeV n/cm2.  
1.7 This guide does not address neutron-induced single or multiple neutron event effects or transient annealing.  
1.8 This guide provides an alternative to Test Method 1017, Neutron Displacement Testing, a component of MIL-STD-883 and MIL-STD-750.  
1.9 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.  
1.10 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

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ASTM
ASTM F1467-18(Guide)
Standard Guide for Use of an X-Ray Tester (≈10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits

SIGNIFICANCE AND USE
4.1 Electronic circuits used in many space, military and nuclear power systems may be exposed to various levels of ionizing radiation dose. It is essential for the design and fabrication of such circuits that test methods be available that can determine the vulnerability or hardness (measure of nonvulnerability) of components to be used in such systems.  
4.2 Manufacturers are currently selling semiconductor parts with guaranteed hardness ratings, and the military specification system is being expanded to cover hardness specification for parts. Therefore test methods and guides are required to standardize qualification testing.  
4.3 Use of low energy (≈10 keV) X-ray sources has been examined as an alternative to cobalt-60 for the ionizing radiation effects testing of microelectronic devices (3, 4, 5, 6). The goal of this guide is to provide background information and guidance for such use where appropriate.
Note 3: Cobalt-60—The most commonly used source of ionizing radiation for ionizing radiation (“total dose”) testing is cobalt-60. Gamma rays with energies of 1.17 and 1.33 MeV are the primary ionizing radiation emitted by cobalt-60. In exposures using cobalt-60 sources, test specimens must be enclosed in a lead-aluminum container to minimize dose-enhancement effects caused by low-energy scattered radiation (unless it has been demonstrated that these effects are negligible). For this lead-aluminum container, a minimum of 1.5 mm of lead surrounding an inner shield of 0.7 to 1.0 mm of aluminum is required. (See 8.2.2.2 and Practice E1249.)  
4.4 The X-ray tester has proven to be a useful ionizing radiation effects testing tool because:  
4.4.1 It offers a relatively high dose rate, in comparison to most cobalt-60 sources, thus offering reduced testing time.  
4.4.2 The radiation is of sufficiently low energy that it can be readily collimated. As a result, it is possible to irradiate a single device on a wafer.  
4.4.3 Radiation safety issues are more easily...
SCOPE
1.1 This guide covers recommended procedures for the use of X-ray testers (that is, sources with a photon spectrum having ≈10 keV mean photon energy and ≈50 keV maximum energy) in testing semiconductor discrete devices and integrated circuits for effects from ionizing radiation.  
1.2 The X-ray tester may be appropriate for investigating the susceptibility of wafer level or delidded microelectronic devices to ionizing radiation effects. It is not appropriate for investigating other radiation-induced effects such as single-event effects (SEE) or effects due to displacement damage.  
1.3 This guide focuses on radiation effects in metal oxide semiconductor (MOS) circuit elements, either designed (as in MOS transistors) or parasitic (as in parasitic MOS elements in bipolar transistors).  
1.4 Information is given about appropriate comparison of ionizing radiation hardness results obtained with an X-ray tester to those results obtained with cobalt-60 gamma irradiation. Several differences in radiation-induced effects caused by differences in the photon energies of the X-ray and cobalt-60 gamma sources are evaluated. Quantitative estimates of the magnitude of these differences in effects, and other factors that should be considered in setting up test protocols, are presented.  
1.5 If a 10-keV X-ray tester is to be used for qualification testing or lot acceptance testing, it is recommended that such tests be supported by cross checking with cobalt-60 gamma irradiations.  
1.6 Comparisons of ionizing radiation hardness results obtained with an X-ray tester with results obtained with a LINAC, with protons, etc. are outside the scope of this guide.  
1.7 Current understanding of the differences between the physical effects caused by X-ray and cobalt-60 gamma irradiations is used to provide an estimate of the ratio (number-of-holes-cobalt-60)/(number-of-holes-X-ray). Several cases are defined where the differences in the eff...

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