ASTM F1190-18
(Guide)Standard Guide for Neutron Irradiation of Unbiased Electronic Components
Standard Guide for Neutron Irradiation of Unbiased Electronic Components
SIGNIFICANCE AND USE
5.1 Semiconductor devices can be permanently damaged by neutrons (1, 2)6. The effect of such damage on the performance of an electronic component can be determined by measuring the component’s electrical characteristics before and after exposure to fast neutrons in the neutron fluence range of interest. The resulting data can be utilized in the design of electronic circuits that are tolerant of the degradation exhibited by that component.
5.2 This guide provides a method by which the exposure of silicon and gallium arsenide semiconductor devices to neutron irradiation may be performed in a manner that is repeatable and which will allow comparison to be made of data taken at different facilities.
5.3 For semiconductors other than silicon and gallium arsenide, applicable validated 1-MeV damage functions are not available in codified National standards. In the absence of a validated 1-MeV damage function, the non-ionizing energy loss (NIEL) or the displacement kerma, as a function of incident neutron energy, normalized to the response in the 1 MeV energy region, may be used as an approximation. See Practice E722 for a description of the method used to determine the damage functions in Si and GaAs (3).
SCOPE
1.1 This guide strictly applies only to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation to determine the permanent damage in the components. Validated 1-MeV displacement damage functions codified in National Standards are not currently available for other semiconductor materials.
1.2 Elements of this guide, with the deviations noted, may also be applicable to the exposure of semiconductors comprised of other materials except that validated 1-MeV displacement damage functions codified in National standards are not currently available.
1.3 Only the conditions of exposure are addressed in this guide. The effects of radiation on the test sample should be determined using appropriate electrical test methods.
1.4 This guide addresses those issues and concerns pertaining to irradiations with neutrons.
1.5 System and subsystem exposures and test methods are not included in this guide.
1.6 The range of interest for neutron fluence in displacement damage semiconductor testing range from approximately 109 to 1016 1-MeV n/cm2.
1.7 This guide does not address neutron-induced single or multiple neutron event effects or transient annealing.
1.8 This guide provides an alternative to Test Method 1017, Neutron Displacement Testing, a component of MIL-STD-883 and MIL-STD-750.
1.9 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.
1.10 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
General Information
Relations
Buy Standard
Standards Content (Sample)
This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the
Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
Designation: F1190 − 18
Standard Guide for
1
Neutron Irradiation of Unbiased Electronic Components
This standard is issued under the fixed designation F1190; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope ization established in the Decision on Principles for the
Development of International Standards, Guides and Recom-
1.1 This guide strictly applies only to the exposure of
mendations issued by the World Trade Organization Technical
unbiased silicon (Si) or gallium arsenide (GaAs) semiconduc-
Barriers to Trade (TBT) Committee.
tor components (integrated circuits, transistors, and diodes) to
neutron radiation to determine the permanent damage in the
2. Referenced Documents
components. Validated 1-MeV displacement damage functions
2
2.1 ASTM Standards:
codified in National Standards are not currently available for
E264 Test Method for Measuring Fast-Neutron Reaction
other semiconductor materials.
Rates by Radioactivation of Nickel
1.2 Elements of this guide, with the deviations noted, may
E265 Test Method for Measuring Reaction Rates and Fast-
also be applicable to the exposure of semiconductors com-
Neutron Fluences by Radioactivation of Sulfur-32
prised of other materials except that validated 1-MeV displace-
E668 Practice for Application of Thermoluminescence-
ment damage functions codified in National standards are not
Dosimetry (TLD) Systems for Determining Absorbed
currently available.
Dose in Radiation-Hardness Testing of Electronic Devices
1.3 Only the conditions of exposure are addressed in this
E720 Guide for Selection and Use of Neutron Sensors for
guide. The effects of radiation on the test sample should be
Determining Neutron Spectra Employed in Radiation-
determined using appropriate electrical test methods.
Hardness Testing of Electronics
E721 Guide for Determining Neutron Energy Spectra from
1.4 This guide addresses those issues and concerns pertain-
Neutron Sensors for Radiation-Hardness Testing of Elec-
ing to irradiations with neutrons.
tronics
1.5 System and subsystem exposures and test methods are
E722 Practice for Characterizing Neutron Fluence Spectra in
not included in this guide.
Terms of an Equivalent Monoenergetic Neutron Fluence
1.6 The range of interest for neutron fluence in displacement
for Radiation-Hardness Testing of Electronics
9
damage semiconductor testing range from approximately 10
E1249 Practice for Minimizing Dosimetry Errors in Radia-
16 2
to 10 1-MeV n/cm .
tion Hardness Testing of Silicon Electronic Devices Using
Co-60 Sources
1.7 This guide does not address neutron-induced single or
E1250 Test Method for Application of Ionization Chambers
multiple neutron event effects or transient annealing.
to Assess the Low Energy Gamma Component of
1.8 This guide provides an alternative to Test Method 1017,
Cobalt-60 Irradiators Used in Radiation-Hardness Testing
Neutron Displacement Testing, a component of MIL-STD-883
of Silicon Electronic Devices
and MIL-STD-750.
E1854 Practice for Ensuring Test Consistency in Neutron-
1.9 This standard does not purport to address all of the
Induced Displacement Damage of Electronic Parts
safety concerns, if any, associated with its use. It is the
E1855 Test Method for Use of 2N2222A Silicon Bipolar
responsibility of the user of this standard to establish appro-
Transistors as Neutron Spectrum Sensors and Displace-
priate safety, health, and environmental practices and deter-
ment Damage Monitors
mine the applicability of regulatory limitations prior to use.
E2450 Practice for Application of CaF (Mn) Thermolumi-
2
1.10 This international standard was developed in accor-
nescence Dosimeters in Mixed Neutron-Photon Environ-
dance with internationally recognized principles on standard-
ments
F980 Guide for Measurement of Rapid Annealing of
1
This guide is under the jurisdiction of ASTM Committee E10 on Nuclear
Technology and Applications and is the direct responsibility of Subcommittee
2
E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices. For referenced ASTM standards, visit the ASTM website, www.astm.org, or
Current edition approved March 1, 2018. Published April 2018. Originally contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM
approved in 1988. Last previous edition approved in 2011 as F1190–11. DOI: Standards volume information, refer to the standard’s Document Summary page on
10.1520/F1190-18. the ASTM website.
Copyright
...
This document is not an ASTM standard and is intended only to provide the user of an ASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
Designation: F1190 − 11 F1190 − 18
Standard Guide for
1
Neutron Irradiation of Unbiased Electronic Components
This standard is issued under the fixed designation F1190; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
1. Scope
1.1 This guide strictly applies only to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor
components (integrated circuits, transistors, and diodes) to neutron radiation from a nuclear reactor source to determine the
permanent damage in the components. Validated 1-MeV displacement damage functions codified in National Standards are not
currently available for other semiconductor materials.
1.2 Elements of this guide, with the deviations noted, may also be applicable to the exposure of semiconductors comprised of
other materials except that validated 1-MeV displacement damage functions codified in National standards are not currently
available.
1.3 Only the conditions of exposure are addressed in this guide. The effects of radiation on the test sample should be determined
using appropriate electrical test methods.
1.4 This guide addresses those issues and concerns pertaining to irradiations with reactor spectrum neutrons.
1.5 System and subsystem exposures and test methods are not included in this guide.
1.6 This guide is applicable to irradiations conducted with the reactor operating in either the pulsed or steady-state mode. The
9 16
range of interest for neutron fluence in displacement damage semiconductor testing range from approximately 10 to 10 1-MeV
2
n/cm .
1.7 This guide does not address neutron-induced single or multiple neutron event effects or transient annealing.
1.8 This guide provides an alternative to Test Method 1017.3,1017, Neutron Displacement Testing, a component of
MIL-STD-883 and MIL-STD-750. The Department of Defense has restricted use of these MIL-STDs to programs existing in 1995
and earlier.
1.9 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility
of the user of this standard to establish appropriate safety safety, health, and healthenvironmental practices and determine the
applicability of regulatory limitations prior to use.
1.10 This international standard was developed in accordance with internationally recognized principles on standardization
established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued
by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
2. Referenced Documents
2
2.1 ASTM Standards:
E264 Test Method for Measuring Fast-Neutron Reaction Rates by Radioactivation of Nickel
E265 Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32
E668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in
Radiation-Hardness Testing of Electronic Devices
E720 Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness
Testing of Electronics
E721 Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics
1
This guide is under the jurisdiction of ASTM Committee F01 on Electronics and is the direct responsibility of Subcommittee F01.11 on Nuclear and Space Radiation
Effects.
Current edition approved Oct. 1, 2011March 1, 2018. Published October 2011April 2018. Originally approved in 1988. Last previous edition approved in 20052011 as
F1190–99(2005).F1190–11. DOI: 10.1520/F1190-11.10.1520/F1190-18.
2
For referenced ASTM standards, visit the ASTM website, www.astm.org, or contact ASTM Customer Service at service@astm.org. For Annual Book of ASTM Standards
volume information, refer to the standard’s Document Summary page on the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1
---------------------- Page: 1 ----------------------
F1190 − 18
E722 Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for
Radiation-Hardness Testing of Electronics
E1249 Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60
Sources
E1
...
Questions, Comments and Discussion
Ask us and Technical Secretary will try to provide an answer. You can facilitate discussion about the standard in here.