Standard Practice for Evaluation of Granular Polysilicon by Meter-Zoner Spectroscopies (Withdrawn 2003)

SCOPE
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This practice describes a procedure to consolidate granular polysilicon into a solid rod and then to convert the polysilicon rod into a single crystal by a float-zone technique. The resultant single crystal ingot is used for the determination of trace impurities in the polysilicon. These impurities are acceptor and donor components (usually boron, aluminum, phosphorus, arsenic, and antimony) as well as substitutional carbon.
1.2 The useful range of impurity concentration covered by this practice is 0.002 to 100 parts per billion atomic (ppba) for acceptor and donor impurities, and 0.03 to 5 parts per million atomic (ppma) for carbon. The acceptor and donor impurities are analyzed in a slice taken from the single crystal ingot by photoluminescence or infrared spectroscopies. The carbon impurity is determined by analysis of a slice by infrared spectroscopy.
1.3 This practice is applicable only to evaluation of polysilicon granules as produced by thermal deposition of silane, or one of the chlorosilanes, onto high purity seeds of polysilicon in a continuous fluid bed reactor. The granules are near spherical in shape and range in size from 200 to 2500 μm with a mean size of about 900 μm.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 9 and in 12.1.1.

General Information

Status
Withdrawn
Publication Date
09-Jan-2002
Withdrawal Date
09-May-2003
Technical Committee
Current Stage
Ref Project

Relations

Buy Standard

Standard
ASTM F1708-02 - Standard Practice for Evaluation of Granular Polysilicon by Meter-Zoner Spectroscopies (Withdrawn 2003)
English language
5 pages
sale 15% off
Preview
sale 15% off
Preview

Standards Content (Sample)

NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 1708 – 02
Standard Practice for
Evaluation of Granular Polysilicon by Melter-Zoner
1
Spectroscopies
This standard is issued under the fixed designation F 1708; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
3
1. Scope Single Crystal Silicon for III-V Impurities
F 1391 Test Method for Substitutional Atomic Carbon Con-
1.1 This practice describes a procedure to consolidate
3
tent of Silicon by Infrared Absorption
granular polysilicon into a solid rod and then to convert the
F 1630 Test Method for Low Temperature FT-IR Analysis
polysilicon rod into a single crystal by a float-zone technique.
3
of Single Crystal Silicon for III-V Impurities
The resultant single crystal ingot is used for the determination
2.2 SEMI Standards:
of trace impurities in the polysilicon. These impurities are
4
C3.14 Specification for Argon
acceptor and donor components (usually boron, aluminum,
4
C28 Specifications and Guidelines for Hydrofluoric Acid
phosphorus, arsenic, and antimony) as well as substitutional
4
C31 Specification for Methanol
carbon.
4
C34 Specification for Mixed Acid Etchants
1.2 The useful range of impurity concentration covered by
4
C35 Specifications and Guideline for Nitric Acid
this practice is 0.002 to 100 parts per billion atomic (ppba) for
2.3 Federal Standard:
acceptor and donor impurities, and 0.03 to 5 parts per million
209E, Airborne Particulate Cleanliness Classes in Clean-
atomic (ppma) for carbon. The acceptor and donor impurities
5
rooms and Clean Zones
are analyzed in a slice taken from the single crystal ingot by
2.4 ISO Standard:
photoluminescence or infrared spectroscopies. The carbon
ISO 14644-1, Cleanrooms and Associated Controlled Envi-
impurity is determined by analysis of a slice by infrared
6
ronments C Part 1: Classification of Airborne Particulates
spectroscopy.
1.3 This practice is applicable only to evaluation of poly-
3. Terminology
silicon granules as produced by thermal deposition of silane, or
3.1 Most terms used in this practice are defined in Termi-
one of the chlorosilanes, onto high purity seeds of polysilicon
nology F 1241.
in a continuous fluid bed reactor. The granules are near
3.2 Definitions of Terms Specific to This Practice:
spherical in shape and range in size from 200 to 2500 μm with
3.2.1 granular polysilicon, n—nearly spherical, granules
a mean size of about 900 μm.
(200 to 2500 μm) of polysilicon as produced in a fluidized bed
1.4 This standard does not purport to address all of the
reactor.
safety concerns, if any, associated with its use. It is the
3.2.2 melter/zoner, n—an apparatus designed to melt granu-
responsibility of the user of this standard to establish appro-
lar polysilicon to a solid rod and then convert the polycrystal-
priate safety and health practices and determine the applica-
line rod to a single crystal ingot by an rf coupled coil.
bility of regulatory limitations prior to use. Specific hazard
3.2.3 PTFE—an acronym for polytetrafluoroethylene, a
statements are given in Section 9 and in 12.1.1.
chemically resistant polymer.
2. Referenced Documents 3.2.4 silicon pedestal, n—a piece of single crystal silicon
cut from a high purity silicon ingot.
2.1 ASTM Standards:
D 5127 Guide for Ultra Pure Water Used in the Electronics
4. Summary of Practice
2
and Semiconductor Industry
3 4.1 Granular polysilicon is converted into a single crystal
F 1241 Terminology of Silicon Technology
silicon rod in a two-step procedure.
F 1389 Test Methods for Photoluminescence Analysis of
1 4
This practice is under the jurisdiction of ASTM Committee F01 on Electronics Available from Semiconductor Equipment and Materials International, 3081
and is the direct responsibility of Subcommittee F01.06 on Silicon Materials and Zanker Rd., San Jose, CA 95134 (www.semi.org).
5
Process Control. Available from the Superintendent of Documents, U.S. Government Printing
Current edition approved Jan. 10, 2002. Published March 2002. Originally Office, Washington, DC 20402.
6
published as F 1708 – 96. Last previous edition F 1708 – 96. ISO Central Secretariat, C.P. 56, CH-1211 Genève 20, Switzerland; available in
2
Annual Book of ASTM Standards, Vol 11.01. the U.S. from American National Standards Institute, 25 West 43rd Street, 4th Floor,
3
Annual Book of ASTM Standards, Vol 10.05. New York, NY 10036.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.
1

---------------------- Page: 1 ----------------------
NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contac
...

Questions, Comments and Discussion

Ask us and Technical Secretary will try to provide an answer. You can facilitate discussion about the standard in here.