Blank Detail Specification: Case-rated bipolar transistors for high frequency amplification

D114/033: Withdrawn

Vordruck für Bauartspezifikation: Auf Gehäusetemperatur bezogene Transistoren für HF-Verstärkung

Spécification particulière cadre: Transistors bipolaires à température ambiante spécifiée, pour amplification de haute fréquence

Blank detail specification: Case-rated bipolar transistors for high frequency amplification

General Information

Status
Withdrawn
Publication Date
14-Dec-1991
Withdrawal Date
02-Dec-2002
Current Stage
9960 - Withdrawal effective - Withdrawal
Completion Date
03-Dec-2002

Buy Standard

Standard
EN 150007:2002
English language
12 pages
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Standards Content (Sample)

2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.Blank detail specification: Case-rated bipolar transistors for high frequency amplificationVordruck für Bauartspezifikation: Auf Gehäusetemperatur bezogene Transistoren für HF-VerstärkungSpécification particulière cadre: Transistors bipolaires à température ambiante spécifiée, pour amplification de haute fréquenceBlank Detail Specification: Case-rated bipolar transistors for h
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