IEC 60749-38:2008

Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory

This part of IEC 60749 establishes a procedure for measuring the soft error susceptibility of semiconductor devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method may be applied to any type of integrated circuit with memory device.

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 38: Méthode d'essai des erreurs logicielles pour les dispositifs à semiconducteurs avec mémoire

La présente partie de la CEI 60749 établit une procédure de mesure de la prédisposition aux erreurs logicielles des dispositifs à semiconducteurs à mémoire lorsqu'ils sont soumis à des particules énergétiques telles que le rayonnement alpha. Deux essais sont décrits: un essai accéléré utilisant une source de rayonnement alpha et un essai de système en temps réel (non accéléré) dans lequel toutes les erreurs sont générées dans des conditions de rayonnement se produisant naturellement: il peut s'agir du rayonnement alpha ou de tout autre rayonnement, neutronique par exemple. Pour une caractérisation complète de la capacité d'erreur logicielle d'un circuit intégré à mémoire, il faut que le dispositif soit soumis à un essai pour le spectre large à haute énergie et les neutrons thermiques en utilisant des méthodes d'essais complémentaires. Cette méthode d'essai peut être appliquée à tout type de circuit intégré qui possède un dispositif de mémoire.

General Information

• Status: Published
• Publication Date: 11-Feb-2008
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.01 - Semiconductor devices in general
• Technical Committee: TC 47 - Semiconductor devices
• Drafting Committee: WG 2 - TC 47/WG 2
• Current Stage: PPUB - Publication issued
• Start Date: 15-Feb-2008
• Completion Date: 12-Feb-2008

Standards Content (Sample)

IEC 60749-38
Edition 1.0 2008-02
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –
Part 38: Soft error test method for semiconductor devices with memory

Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –
Partie 38: Méthode d’essai des erreurs logicielles pour les dispositifs à
semiconducteurs avec mémoire
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IEC 60749-38
Edition 1.0 2008-02
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –
Part 38: Soft error test method for semiconductor devices with memory

Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –
Partie 38: Méthode d’essai des erreurs logicielles pour les dispositifs à
semiconducteurs avec mémoire
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
M
CODE PRIX
ICS 31.080.01 ISBN 2-8318-9615-0

– 2 – 60749-38 © IEC:2008
CONTENTS
FOREWORD.3

1 Scope.5
2 Terms and definitions .5
3 Test apparatus .7
3.1 Measurement equipment .7
3.2 Alpha radiation source.7
3.2.1 Background information.7
3.2.2 Preferred sources .7
3.2.3 Variation in results.7
3.2.4 Effect of high radiation levels.7
3.2.5 Measurement accuracy.8
3.3 Test sample .8
4 Procedure .8
4.1 Alpha radiation accelerated soft error test .8
4.1.1 Surface preparation .8
4.1.2 Power supply voltage .8
4.1.3 Ambient temperature .9
4.1.4 Core cycle time.9
4.1.5 Data pattern .9
4.1.6 Distance between chip and radiation source .9
4.1.7 Number of measurement samples.9
4.2 Real-time soft error test.9
4.2.1 General .9
4.2.2 Power supply voltage .9
4.2.3 Ambient temperature .9
4.2.4 Operating frequency .9
4.2.5 Data pattern .10
4.2.6 Test time .10
4.2.7 Number of test samples .10
4.2.8 Environmental neutron testing .10
4.3 Neutron radiation accelerated soft error test.10
5 Evaluation .10
5.1 Alpha radiation accelerated soft error test .10
5.2 Real-time soft error test.11
6 Summary.12

Bibliography.13

Figure 1 – Effect of source-device spacing on normalized flux at device .8

Table 1 – X for FIT calculation .11

60749-38 © IEC:2008 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 38: Soft error test method for semiconductor
devices with memory
FOREWORD
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International Standard IEC 60749-38 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/1943/FDIS 47/1951/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

– 4 – 60749-38 © IEC:2008
A list of all the parts in the IEC 60749 series, under the general title Semiconductor devices –
Mechanical and climatic test methods, can be found on the IEC website.
The committee has decided that the contents of this publication will remain unchanged until
the maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in
the data related to the specific publication. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
60749-38 © IEC:2008 – 5 –
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 38: Soft error test method for semiconductor
devices with memory
1 Scope
This part of IEC 60749 establishes a procedure for measuring the soft error susceptibility of
semiconductor devices with memory when subjected to energetic
...