Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)

IEC 60749-18:2019 is available as IEC 60749-18:2019 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.
IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition:
- updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing;
- addition of a Bibliography, which includes ASTM standards relevant to this test method.

Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 18: Rayonnements ionisants (dose totale)

IEC 60749-18:2019 est disponible sous forme de IEC 60749-18:2019 RLV qui contient la Norme internationale et sa version Redline, illustrant les modifications du contenu technique depuis l'édition précédente.
L’IEC 60749-18:2019 présente une procédure d’essai permettant de définir les exigences pour soumettre à essai des circuits intégrés à semiconducteurs sous boîtier et des dispositifs discrets à semiconducteurs, concernant les effets des rayonnements ionisants (dose totale) provenant d’une source de rayons gamma au cobalt-60 (60Co). D’autres sources de rayonnements appropriées peuvent être utilisées. Le présent document ne concerne que les irradiations continues et ne s’applique pas aux irradiations pulsées. Il est destiné aux applications des domaines militaire et aérospatial. Il s’agit d’un essai destructif. Cette édition inclut les modifications techniques majeures suivantes par rapport à l’édition précédente:
- mises à jour apportées aux paragraphes afin de mieux aligner la méthode d’essai avec la méthode 1019 du document MIL-STD 883J, comprenant l’utilisation de l’essai de sensibilité accrue au faible débit de dose (ELDRS);
- ajout d’une bibliographie, comprenant les normes ASTM correspondant à la présente méthode d’essai.

General Information

Status
Published
Publication Date
09-Apr-2019
Technical Committee
Drafting Committee
Current Stage
PPUB - Publication issued
Start Date
03-May-2019
Completion Date
10-Apr-2019
Ref Project

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IEC 60749-18 ®
Edition 2.0 2019-04
REDLINE VERSION
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Mechanical and climatic test methods –
Part 18: Ionizing radiation (total dose)

All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form
or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from
either IEC or IEC's member National Committee in the country of the requester. If you have any questions about IEC
copyright or have an enquiry about obtaining additional rights to this publication, please contact the address below or
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About the IEC
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International Standards for all electrical, electronic and related technologies.

About IEC publications
The technical content of IEC publications is kept under constant review by the IEC. Please make sure that you have the
latest edition, a corrigendum or an amendment might have been published.

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IEC 60749-18 ®
Edition 2.0 2019-04
REDLINE VERSION
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Mechanical and climatic test methods –

Part 18: Ionizing radiation (total dose)

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.01 ISBN 978-2-8322-6832-2

– 2 – IEC 60749-18:2019 RLV © IEC 2019
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Test apparatus . 8
4.1 Choice of apparatus . 8
4.2 Radiation source . 8
4.3 Dosimetry system . 8
4.4 Electrical test instruments . 8
4.5 Test circuit board(s) . 8
4.6 Cabling . 9
4.7 Interconnect or switching system . 9
4.8 Environmental chamber . 9
4.9 Irradiation temperature chamber . 9
5 Procedure . 9
5.1 Test plan . 9
5.2 Sample selection and handling . 9
5.3 Burn-in . 10
5.4 Dosimetry measurements . 10
5.5 Lead/aluminium (Pb/Al) container . 10
5.6 Radiation level(s) . 10
5.7 Radiation dose rate . 10
5.7.1 Radiation dose rate determination . 10
5.7.2 Condition A . 10
5.7.3 Condition B . 11
5.7.4 Condition C . 11
5.7.5 Condition D . 11
5.7.6 Condition E . 11
5.8 Temperature requirements . 11
5.8.1 Room temperature radiation . 11
5.8.2 Elevated temperature irradiation . 12
5.8.3 Cryogenic temperature irradiation . 12
5.9 Electrical performance measurements . 12
5.10 Test conditions . 12
5.10.1 Choice of test conditions. 12
5.10.2 In-flux testing . 12
5.10.3 Remote testing . 13
5.10.4 Bias and loading conditions . 13
5.11 Post-irradiation procedure . 13
5.12 Extended room temperature annealing test . 14
5.12.1 Choice of annealing test . 14
5.12.2 Need to perform an extended room temperature annealing test . 14
5.12.3 Extended room temperature annealing test procedure . 14
5.13 MOS accelerated annealing test . 15
5.13.1 Choice of MOS accelerated annealing test . 15
5.13.2 Need to perform accelerated annealing test . 15

5.13.3 Accelerated annealing test procedure . 16
5.14 Test procedure for bipolar and BiCMOS linear or mixed signal devices with
intended application dose rates less than 0,5 Gy(Si)/s . 16
5.14.1 Need to perform ELDRS testing . 16
5.14.2 Determination of whether a part exhibits ELDRS. 17
5.14.3 Characterization of ELDRS parts to determine the irradiation conditions
for production or lot acceptance testing . 17
5.14.4 Low dose rate or elevated temperature irradiation test for bipolar or
BiCMOS linear or mixed-signal devices . 18
5.15 Test report . 18
6 Summary . 18
Bibliography . 22

Figure 1 – Flow diagram for ionizing radiation test procedure for MOS and digital
bipolar devices. 20
Figure 2 – Flow diagram for ionizing radiation test procedure for bipolar (or BiCMOS)
linear or mixed-signal devices . 21

– 4 – IEC 60749-18:2019 RLV © IEC 2019
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 18: Ionizing radiation (total dose)

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
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International Standard IEC 60749-18 has been prepared by IEC technical committee 47:
Semiconductor devices.
This second edition cancels and replaces the first edition published in 2002. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the pr
...


IEC 60749-18 ®
Edition 2.0 2019-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –
Part 18: Ionizing radiation (total dose)

Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –
Partie 18: Rayonnements ionisants (dose totale)

All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form
or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from
either IEC or IEC's member National Committee in the country of the requester. If you have any questions about IEC
copyright or have an enquiry about obtaining additional rights to this publication, please contact the address below or
your local IEC member National Committee for further information.

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Switzerland
About the IEC
The International Electrotechnical Commission (IEC) is the leading global organization that prepares and publishes
International Standards for all electrical, electronic and related technologies.

About IEC publications
The technical content of IEC publications is kept under constant review by the IEC. Please make sure that you have the
latest edition, a corrigendum or an amendment might have been published.

IEC publications search - webstore.iec.ch/advsearchform Electropedia - www.electropedia.org
The advanced search enables to find IEC publications by a The world's leading online dictionary on electrotechnology,
variety of criteria (reference number, text, technical containing more than 22 000 terminological entries in English
committee,…). It also gives information on projects, replaced and French, with equivalent terms in 16 additional languages.
and withdrawn publications. Also known as the International Electrotechnical Vocabulary

(IEV) online.
IEC Just Published - webstore.iec.ch/justpublished
Stay up to date on all new IEC publications. Just Published IEC Glossary - std.iec.ch/glossary
details all new publications released. Available online and 67 000 electrotechnical terminology entries in English and
once a month by email. French extracted from the Terms and Definitions clause of
IEC publications issued since 2002. Some entries have been
IEC Customer Service Centre - webstore.iec.ch/csc collected from earlier publications of IEC TC 37, 77, 86 and
If you wish to give us your feedback on this publication or CISPR.

need further assistance, please contact the Customer Service

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IEC 60749-18 ®
Edition 2.0 2019-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –

Part 18: Ionizing radiation (total dose)

Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –

Partie 18: Rayonnements ionisants (dose totale)

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01 ISBN 978-2-8322-6755-4

– 2 – IEC 60749-18:2019 © IEC 2019
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Test apparatus . 8
4.1 Choice of apparatus . 8
4.2 Radiation source . 8
4.3 Dosimetry system . 8
4.4 Electrical test instruments . 8
4.5 Test circuit board(s) . 8
4.6 Cabling . 9
4.7 Interconnect or switching system . 9
4.8 Environmental chamber . 9
4.9 Irradiation temperature chamber . 9
5 Procedure . 9
5.1 Test plan . 9
5.2 Sample selection and handling . 9
5.3 Burn-in . 10
5.4 Dosimetry measurements . 10
5.5 Lead/aluminium (Pb/Al) container . 10
5.6 Radiation level(s) . 10
5.7 Radiation dose rate . 10
5.7.1 Radiation dose rate determination . 10
5.7.2 Condition A . 11
5.7.3 Condition B . 11
5.7.4 Condition C . 11
5.7.5 Condition D . 11
5.7.6 Condition E . 11
5.8 Temperature requirements . 11
5.8.1 Room temperature radiation . 11
5.8.2 Elevated temperature irradiation . 11
5.8.3 Cryogenic temperature irradiation . 12
5.9 Electrical performance measurements . 12
5.10 Test conditions . 12
5.10.1 Choice of test conditions. 12
5.10.2 In-flux testing . 12
5.10.3 Remote testing . 12
5.10.4 Bias and loading conditions . 13
5.11 Post-irradiation procedure . 13
5.12 Extended room temperature annealing test . 14
5.12.1 Choice of annealing test . 14
5.12.2 Need to perform an extended room temperature annealing test . 14
5.12.3 Extended room temperature annealing test procedure . 14
5.13 MOS accelerated annealing test . 15
5.13.1 Choice of MOS accelerated annealing test . 15

5.13.2 Need to perform accelerated annealing test . 15
5.13.3 Accelerated annealing test procedure . 16
5.14 Test procedure for bipolar and BiCMOS linear or mixed signal devices with
intended application dose rates less than 0,5 Gy(Si)/s . 16
5.14.1 Need to perform ELDRS testing . 16
5.14.2 Determination of whether a part exhibits ELDRS. 17
5.14.3 Characterization of ELDRS parts to determine the irradiation conditions
for production or lot acceptance testing . 17
5.14.4 Low dose rate or elevated temperature irradiation test for bipolar or
BiCMOS linear or mixed-signal devices . 18
5.15 Test report . 18
6 Summary . 18
Bibliography . 21

Figure 1 – Flow diagram for ionizing radiation test procedure for MOS and digital
bipolar devices. 19
Figure 2 – Flow diagram for ionizing radiation test procedure for bipolar (or BiCMOS)
linear or mixed-signal devices . 20

– 4 – IEC 60749-18:2019 © IEC 2019
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 18: Ionizing radiation (total dose)

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express
...

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