IEC 60747-15:2003

Discrete semiconductor devices - Part 15: Isolated power semiconductor devices

IEC 60747-15:2003 gives the product specific standards, requirements and test methods for isolated power semiconductor devices. These requirements are added to those given in other parts of IEC 60747, IEC 60748 and IEC 60749 for the corresponding non-isolated power devices.

Dispositifs discrets à semiconducteurs - Partie 15: Dispositifs de puissance à semiconducteurs isolés

La CEI 60747-15:2003 donne les normes spécifiques au produit, les exigences et les méthodes d'essais relatives aux dispositifs de puissance à semiconducteurs isolés. Ces exigences s'ajoutent à celles données dans d'autres parties de la CEI 60747, de la CEI 60748 et de la CEI 60749 pour les dispositifs de puissance non isolés correspondants.

General Information

• Status: Published
• Publication Date: 10-Jun-2003
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 3 - TC 47/SC 47E/WG 3
• Current Stage: DELPUB - Deleted Publication
• Completion Date: 16-Dec-2010

Relations

• Revised: IEC 60747-15:2010 - Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
• Effective Date: 05-Sep-2023

Standards Content (Sample)

INTERNATIONAL IEC
STANDARD
60747-15
First edition
2003-06
Discrete semiconductor devices –
Part 15:
Isolated power semiconductor devices
Dispositifs à semiconducteurs –
Partie 15:
Dispositifs à semiconducteurs de puissance isolés

Reference number
Publication numbering
As from 1 January 1997 all IEC publications are issued with a designation in the

60000 series. For example, IEC 34-1 is now referred to as IEC 60034-1.

Consolidated editions
The IEC is now publishing consolidated versions of its publications. For example,

edition numbers 1.0, 1.1 and 1.2 refer, respectively, to the base publication, the

base publication incorporating amendment 1 and the base publication incorporating

amendments 1 and 2.
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INTERNATIONAL IEC
STANDARD
60747-15
First edition
2003-06
Discrete semiconductor devices –
Part 15:
Isolated power semiconductor devices
Dispositifs à semiconducteurs –
Partie 15:
Dispositifs à semiconducteurs de puissance isolés

 IEC 2003  Copyright - all rights reserved
No part of this publication may be reproduced or utilized in any form or by any means, electronic or
mechanical, including photocopying and microfilm, without permission in writing from the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: [phone] Telefax: [phone] E-mail: [e-mail]  Web: www.iec.ch
PRICE CODE
Commission Electrotechnique Internationale
X
International Electrotechnical Commission
Международная Электротехническая Комиссия
For price, see current catalogue

– 2 – 60747-15  IEC:2003(E)
CONTENTS
FOREWORD . 4

1 Scope . 5

2 Normative references. 5

3 Terms and definitions . 7

4 Letter symbols .12

4.1 General .12

4.2 Additional subscripts/symbols .12
4.3 List letter symbols.12
5 Essential ratings (limiting values) and characteristics .13
5.1 General .13
5.2 Ratings (limiting values) .13
5.3 Characteristics.16
6 Verification of ratings (limiting values) .24
) .24
6.1 Isolation voltage between terminals and base plate (V
isol
6.2 Peak case non-rupture current.26
6.3 Maximum terminal current (I ) .26
tRMS
6.4 Surge (non-repetitive) current test (I ; I ).26
FSM TSM
7 Methods of measurement of characteristics .26
7.1 Rated partial discharge inception and extinction voltages (V ) (V ) .26
i e
7.2 Parasitic stray inductance between main terminals (L ) .27
P
7.3 Parasitic stray capacitance of functional circuit elements to case (C ) .30
P
7.4 Measuring methods for thermal characteristics .31
7.5 Measuring methods of mechanical characteristics .32
8 Acceptance and reliability .33
8.1 General requirements .33
8.2 List of endurance tests .33
8.3 Type tests and routine tests of isolated power devices .36
Annex A (informative) Test method for peak case non-rupture current.38
Annex B (informative) Measuring method of the thickness of thermal compound paste.41

Annex C (informative) Climatic parameters and characteristics .42
Annex D (informative) Internal circuit configurations.43
Bibliography.44
Figure 1 – Explanation of parasitic inductance L .18
P
Figure 2 – Examples for distributed parasitic stray inductances L .18
P
Figure 3a – Example of a cross-section of an isolated power device mounted on a heat
sink, with the temperatures T ,… T .20
vj a
Figure 3b – Model of thermal resistances of circuit elements R , R , R ,
th(j-c) th(c-s) th(s-a)
resp. Z , Z and Z , schematically .20
th(j-c) th(j-s) th(j-a)
Figure 4 – Reference points for measuring the temperatures T , T , T , T T to be
vj c cI cD s
specified for an isolated power device, seen from above .22

60747-15  IEC:2003(E) – 3 –
Figure 5 – Transient thermal impedance Z = f(t ) of an isolated power
th(j-c) p
semiconductor device as a function of the pulse duration time t , elapsed after a step
p
change of applied power dissipation.23

Figure 6 – Basic circuit diagram for isolation breakdown withstand voltage test (“high

pot test”) with V .24
isol
Figure 7 – Isolation levels of an isolated power device with integrated driver and

protection functions.25

Figure 8a – Circuit diagram for measurement of parasitic stray inductances (L ).28
P
Figure 8b – Wave forms .29

Figure 9 – Circuit for the measurement of parasitic stray capacitance C of
p
the functional circuit elements to base plate (ground).30
Figure 10 – Example for reference points for the measurement of T and T for the
cref sref
thermal resistance of an isolated power semiconductor devices (dual-switch, 62 mm wide).32
Figure 11 – Power cycling (load) capability N versus temperature rise of the junction
f;p
temperature T per load pulse .34
vj
Figure A.1 – Circuit diagram for test of peak case non-rupture current I .38
CNR
Figure B.1– Example of a measuring gauge for a layer of thermal compound paste of a
thickness between 5 µm and 150 µm.41
Figure D.1 – Converter circuits containing diodes and/or thyristors .43
Figure D.2 – Inverter circuits containing diodes and/or transistors shown as IGBT .44
Table 1 – Environmental testing .35
Table 2 – Minimum type and routine tests for isolated power semiconductor devices .36
Table C.1 – Classification of climatic environmental conditions, e.g. Class 3K3 and 3K4
(extract, not complete) .42

– 4 – 60747-15  IEC:2003(E)
INTERNATIONAL ELECTROTECHNICAL COMMISSION

____________
DISCRETE SEMICONDUCTOR DEVICES –

Part 15: Isolated power semiconductor devices

FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International
Organization for Standardization (ISO) in accordance with conditions determined by agreement between the
two organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-15 has been prepared by subcommittee 47E, Discrete
semiconductor devices of IEC technical committee 47: Semiconductor devices
The text of this standard is based on the following documents:
FDIS Report on voting
47E/236/FDIS 47E/238/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
The committee has decided that the contents of this publication will remain unchanged until 2006.
At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
60747-15  IEC:2003(E) – 5 –
DISCRETE SEMICONDUCTOR DEVICES –

Part 15: Isolated power semiconductor devices

1 Scope
This part of IEC 60747 gives the product specific standards, requirements and test methods
for isolated power semiconductor devices. These requirements are added to those given in
other parts of IEC 60747, IEC 60748 and IEC 60749 for the corresponding non-isolated power
devices.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60068-2-6, Environmental testing – Part 2-6: Tests – Test Fc: Vibration (sinusoidal)
IEC 60068-2-7, Environmental testing – Part 2-7: Tests – Test Ga and guidance: Acceleration,
steady state
IEC 60068-2-14, Environmental testing – Part 2-14: Tests – Test N: Change of temperature
IEC 60068-2-20, Environmental testing – Part 2-20: Tests – Test T: Soldering
IEC 60068-2-27, Environmental testing – Part 2-27: Tests – Test Ea and guidance: Shock
IEC 60068-2-47, Environmental testing – Part 2-47: Test methods – Mounting of components,
equipment and other articl
...

IEC 60747-15 ®
Edition 1.0 2003-06
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Discrete semiconductor devices –
Part 15: Isolated power semiconductor devices

Dispositifs discrets à semiconducteurs –
Partie 15: Dispositifs de puissance à semiconducteurs isolés

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IEC 60747-15 ®
Edition 1.0 2003-06
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Discrete semiconductor devices –

Part 15: Isolated power semiconductor devices

Dispositifs discrets à semiconducteurs –

Partie 15: Dispositifs de puissance à semiconducteurs isolés

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX X
ICS 31.080.99 ISBN 978-2-83220-704-8

– 2 – 60747-15  IEC:2003
CONTENTS
FOREWORD . 4

1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 8
4 Letter symbols . 13
4.1 General . 13
4.2 Additional subscripts/symbols . 13
4.3 List letter symbols . 13
5 Essential ratings (limiting values) and characteristics . 15
5.1 General . 15
5.2 Ratings (limiting values) . 15
5.3 Characteristics . 18
6 Verification of ratings (limiting values) . 27
6.1 Isolation voltage between terminals and base plate (V ) . 27
isol
6.2 Peak case non-rupture current . 29
6.3 Maximum terminal current (I ) . 29
tRMS
6.4 Surge (non-repetitive) current test (I ; I ) . 29
FSM TSM
7 Methods of measurement of characteristics . 29
7.1 Rated partial discharge inception and extinction voltages (V ) (V ) . 29
i e
7.2 Parasitic stray inductance between main terminals (L ) . 30
P
7.3 Parasitic stray capacitance of functional circuit elements to case (C ) . 33
P
7.4 Measuring methods for thermal characteristics . 34
7.5 Measuring methods of mechanical characteristics . 35
8 Acceptance and reliability . 36
8.1 General requirements . 36
8.2 List of endurance tests . 37
8.3 Type tests and routine tests of isolated power devices . 39

Annex A (informative) Test method for peak case non-rupture current . 41
Annex B (informative) Measuring method of the thickness of thermal compound paste . 44
Annex C (informative) Climatic parameters and characteristics . 45
Annex D (informative) Internal circuit configurations . 46

Bibliography . 47

Figure 1 – Explanation of parasitic inductance L . 21
P
Figure 2 – Examples for distributed parasitic stray inductances L . 21
P
Figure 3a – Example of a cross-section of an isolated power device mounted on a heat
sink, with the temperatures T ,… T . 23
vj a
Figure 3b – Model of thermal resistances of circuit elements R , R , R ,
th(j-c) th(c-s) th(s-a)
resp. Z , Z and Z , schematically . 23
th(j-c) th(j-s) th(j-a)
Figure 4 – Reference points for measuring the temperatures T , T , T , T T to be
vj c cI cD s
specified for an isolated power device, seen from above . 25

60747-15  IEC:2003 – 3 –
Figure 5 – Transient thermal impedance Z = f(t ) of an isolated power
th(j-c) p
semiconductor device as a function of the pulse duration time t , elapsed after a step
p
change of applied power dissipation . 26
Figure 6 – Basic circuit diagram for isolation breakdown withstand voltage test (“high
pot test”) with V . 27
isol
Figure 7 – Isolation levels of an isolated power device with integrated driver and
protection functions . 28
Figure 8a – Circuit diagram for measurement of parasitic stray inductances (L ) . 31
P
Figure 8b – Wave forms . 32
Figure 9 – Circuit for the measurement of parasitic stray capacitance C of
p
the functional circuit elements to base plate (ground) . 33
and T for the
Figure 10 – Example for reference points for the measurement of T
cref sref
thermal resistance of an isolated power semiconductor devices (dual-switch, 62 mm wide) . 35
Figure 11 – Power cycling (load) capability N versus temperature rise of the junction
f;p
temperature T per load pulse . 37
vj
Figure A.1 – Circuit diagram for test of peak case non-rupture current I . 41
CNR
Figure B.1– Example of a measuring gauge for a layer of thermal compound paste of a
thickness between 5 µm and 150 µm . 44
Figure D.1 – Converter circuits containing diodes and/or thyristors . 46
Figure D.2 – Inverter circuits containing diodes and/or transistors shown as IGBT . 47

Table 1 – Environmental testing . 38
Table 2 – Minimum type and routine tests for isolated power semiconductor devices . 39
Table C.1 – Classification of climatic environmental conditions, e.g. Class 3K3 and 3K4
(extract, not complete) . 45

– 4 – 60747-15  IEC:2003
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
DISCRETE SEMICONDUCTOR DEVICES –

Part 15: Isolated power semiconductor devices

FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International
Organization for Standardization (ISO) in accordance with conditions determined by agreement between the
two organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and
...