IEC 63068-1:2019

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

General Information

• Status: Published
• Publication Date: 29-Jan-2019
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: TC 47 - Semiconductor devices
• Drafting Committee: WG 5 - TC 47/WG 5
• Current Stage: PPUB - Publication issued
• Start Date: 19-Feb-2019
• Completion Date: 30-Jan-2019

Standards Content (Sample)

IEC 63068-1 ®
Edition 1.0 2019-01
INTERNATIONAL
STANDARD
Semiconductor devices – Non-destructive recognition criteria of defects in
silicon carbide homoepitaxial wafer for power devices –
Part 1: Classification of defects

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IEC 63068-1 ®
Edition 1.0 2019-01
INTERNATIONAL
STANDARD
Semiconductor devices – Non-destructive recognition criteria of defects in

silicon carbide homoepitaxial wafer for power devices –

Part 1: Classification of defects

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8322-6479-9

– 2 – IEC 63068-1:2019 © IEC 2019
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Classification of defects . 10
4.1 General . 10
4.2 Description of the defect classes. 11
4.2.1 Examples of defects . 11
4.2.2 Point defect . 11
4.2.3 Micropipe . 11
4.2.4 TSD . 12
4.2.5 TED . 13
4.2.6 BPD . 14
4.2.7 Scratch trace . 15
4.2.8 Stacking fault . 16
4.2.9 Propagated stacking fault . 17
4.2.10 Stacking fault complex . 18
4.2.11 Polytype inclusion . 19
4.2.12 Particle inclusion . 20
4.2.13 Bunched-step segment . 21
4.2.14 Surface particle . 22
4.2.15 Others . 22
Bibliography . 23

Figure 1 – Micropipe . 12
Figure 2 – TSD . 13
Figure 3 – TED . 14
Figure 4 – BPD . 15
Figure 5 – Scratch trace . 16
Figure 6 – Stacking fault . 17
Figure 7 – Propagated stacking fault . 18
Figure 8 – Stacking fault complex . 19
Figure 9 – Polytype inclusion . 20
Figure 10 – Particle inclusion . 21
Figure 11 – Bunched-step segment . 22

Table 1 – Classification of defects . 11

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
NON-DESTRUCTIVE RECOGNITION CRITERIA OF DEFECTS IN SILICON
CARBIDE HOMOEPITAXIAL WAFER FOR POWER DEVICES –

Part 1: Classification of defects

FOREWORD
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International Standard IEC 63068-1 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this International Standard is based on the following documents:
CDV Report on voting
47/2474/CDV 47/2521A/RVC
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

– 4 – IEC 63068-1:2019 © IEC 2019
A list of all parts in the IEC 63068 series, published under the general title Semiconductor
devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer
for power devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
A bilingual version of this publication may be issued at a later date.

INTRODUCTION
Silicon carbide (SiC) is widely used as a semiconductor material for next-generation power
semiconductor devices. SiC, as compared with silicon (Si), has superior physical properties
such as a higher breakdown electric field, higher thermal conductivity, lower thermal
generation rate, higher saturated electron drift velocity, and lower intrinsic carrier
concentration. Their attributes realize SiC-based power semiconductor devices with faster
switching speeds, lower losses, higher blocking voltages, and higher temperature operation
relative to standard Si-based power semiconductor devices.
SiC-based power semiconductor devices are not fully realized due to high costs, low yield,
and perceived reliability concerns. One of the serious issues lies in the defects existing in SiC
homoepitaxial wafers. Although an effort of decreasing defects in the SiC homoepitaxial layer
is actively implemented, there are a number of defects (approximately 1 000 defects/cm ) in
commercially available SiC homoepitaxial wafers. Therefore, it is indispensable to establish
an international standard regarding the quality assessment of SiC homoepitaxial wafers.
The IEC 63068 series of standards is planned to comprise Part 1, Part 2, and Part 3, as
detailed below. The outline of this Part 1 is to list, illustrate and provide reference for various
characteristic features and defects that are observed on SiC homoepitaxial wafers of
crystallographic polytype 4H used in high-power semiconductor device manufacturing.
Part 1: Classification of defects
Part 2: Test method for defects using optical inspection
Part 3: Test method for defects using photoluminescence

– 6 – IEC 63068-1:2019 © IEC 2019
SEMICONDUCTOR DEVICES –
NON-DESTRUCTIVE RECOGNITION CRITERIA OF DEFECTS IN SILICON
CARBIDE HOMOEPITAXIAL WAFER FOR POWER DEVICES –

Part 1: Classification of defects

1 Scope
This part of IEC 63068 gives a classification of defects in
...