IEC 60747-16-1:2001
(Main)Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers
Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers
IEC 60747-16-1:2001 provides the terminology, the essential ratings and characteristics, as well as the measuring methods for integrated circuit microwave power amplifiers.
Dispositifs à semiconducteurs - Partie 16-1: Circuits intégrés hyperfréquences - Amplificateurs
La CEI 60747-16-1:2001 fournit la terminologie, les valeurs assignées et caractéristiques essentielles, ainsi que les méthodes de mesure pour des amplificateurs de puissance hyperfréquences à circuits intégrés.
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INTERNATIONAL IEC
STANDARD
60747-16-1
First edition
2001-11
Semiconductor devices –
Part 16-1:
Microwave integrated circuits –
Amplifiers
Dispositifs à semiconducteurs –
Partie 16-1:
Circuits intégrés hyperfréquences –
Amplificateurs
Reference number
Publication numbering
As from 1 January 1997 all IEC publications are issued with a designation in the
60000 series. For example, IEC 34-1 is now referred to as IEC 60034-1.
Consolidated editions
The IEC is now publishing consolidated versions of its publications. For example,
edition numbers 1.0, 1.1 and 1.2 refer, respectively, to the base publication, the
base publication incorporating amendment 1 and the base publication incorporating
amendments 1 and 2.
Further information on IEC publications
The technical content of IEC publications is kept under constant review by the IEC,
thus ensuring that the content reflects current technology. Information relating to
this publication, including its validity, is available in the IEC Catalogue of
publications (see below) in addition to new editions, amendments and corrigenda.
Information on the subjects under consideration and work in progress undertaken
by the technical committee which has prepared this publication, as well as the list
of publications issued, is also available from the following:
• IEC Web Site (www.iec.ch)
• Catalogue of IEC publications
The on-line catalogue on the IEC web site (www.iec.ch/catlg-e.htm) enables
you to search by a variety of criteria including text searches, technical
committees and date of publication. On-line information is also available on
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• IEC Just Published
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available by email. Please contact the Customer Service Centre (see below) for
further information.
• Customer Service Centre
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please contact the Customer Service Centre:
Email: custserv@iec.ch
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Fax: +41 22 919 03 00
INTERNATIONAL IEC
STANDARD
60747-16-1
First edition
2001-11
Semiconductor devices –
Part 16-1:
Microwave integrated circuits –
Amplifiers
Dispositifs à semiconducteurs –
Partie 16-1:
Circuits intégrés hyperfréquences –
Amplificateurs
IEC 2001 Copyright - all rights reserved
No part of this publication may be reproduced or utilized in any form or by any means, electronic or
mechanical, including photocopying and microfilm, without permission in writing from the publisher.
International Electrotechnical Commission 3, rue de Varembé Geneva, Switzerland
Telefax: +41 22 919 0300 e-mail: inmail@iec.ch IEC web site http://www.iec.ch
Commission Electrotechnique Internationale
PRICE CODE
X
International Electrotechnical Commission
For price, see current catalogue
– 2 – 60747-16-1 © IEC:2001(E)
CONTENTS
FOREWORD.4
1 Scope.5
2 Normative references .5
3 Terminology .5
4 Essential ratings and characteristics.7
4.1 General .7
4.2 Application related description.8
4.3 Specification of the function .9
4.4 Limiting values (absolute maximum rating system) .10
4.5 Operating conditions (within the specified operating temperature range) .12
4.6 Electrical characteristics.12
4.7 Mechanical and environmental ratings, characteristics and data.14
4.8 Additional information.14
5 Measuring methods .14
5.1 General .14
5.2 Linear (power) gain (G ).15
lin
5.3 Linear (power) gain flatness (ΔG ) .17
lin
5.4 Power gain (G ).18
p
5.5 (Power) gain flatness (ΔG ) .18
p
5.6 (Maximum available) gain reduction (ΔG ) .19
red
5.7 Limiting output power (P ) .20
o(ltg)
5.8 Output power (P ).21
o
5.9 Output power at 1 dB gain compression (P ) .22
o(1dB)
5.10 Noise figure (F) .23
5.11 Intermodulation distortion (P /P ) (two-tone).25
n 1
5.12 Power at the intercept point (for intermodulation products) (P ) .27
n(IP)
5.13 Magnitude of the input reflection coefficient (input return loss) (s ) .28
5.14 Magnitude of the output reflection coefficient (output return loss) (s ) .29
5.15 Magnitude of the reverse transmission coefficient (isolation) (s ) .33
5.16 Conversion coefficient of amplitude modulation to phase modulation (α ) .34
(AM-PM)
5.17 Group delay time (t ).36
d(grp)
5.18 Power added efficiency .37
5.19 nth order harmonic distortion ratio (P P ) .39
nth 1
/
5.20 Output noise power (P ).40
N
5.21 Spurious intensity under specified load VSWR (P /P ) .42
sp o
60747-16-1 © IEC:2001(E) – 3 –
Figure 1 – Circuit for the measurements of linear gain .15
Figure 2 – Basic circuit for the measurement of the noise figure .23
Figure 3 – Basic circuit for the measurements of two-tone intermodulation distortion .25
Figure 4 – Circuit for the measurements of magnitude of input/output reflection
coefficient (input/output return loss) .28
Figure 5 – Circuit for the measurement of output reflection coefficient .31
Figure 6 – Circuit for the measurement of isolation .33
Figure 7 – Basic circuit for the measurement of α .34
(AM-PM)
Figure 8 – Circuit for the measurement of the power added efficiency.37
Figure 9 – Circuit for the measurements of the nth order harmonic distortion ratio .39
Figure 10 – Circuit diagram for the measurement of the output noise power .41
Figure 11 – Circuit diagram for the measurement of the spurious intensity.43
– 4 – 60747-16-1 © IEC:2001(E)
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 16-1: Microwave integrated circuits – Amplifiers
FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International
Organization for Standardization (ISO) in accordance with conditions determined by agreement between the
two organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-16-1 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47E/200/FDIS 47E/204/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 3.
The committee has decided that the contents of this publication will remain unchanged
until 2004. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
A bilingual version of this standard may be issued at a later date.
60747-16-1 © IEC:2001(E) – 5 –
SEMICONDUCTOR DEVICES –
Part 16-1: Microwave integrated circuits – Amplifiers
1 Scope
This part of IEC 60747 provides the terminology, the essential ratings and characteristics, as
well as the measuring methods for integrated circuit microwave power amplifiers.
2 Normative references
The following normative documents contain provisions which, through reference in this text,
constitute provisions of this part of IEC 60747. For dated references, subsequent amend-
ments to, or revisions of, any of these publications do not apply. However, parties to
agreements based on this part of IEC 60747 are encouraged to investigate the possibility of
applying the most recent editions of the normative documents indicated below. For undated
references, the latest edition of the normative document referred to applies. Members of IEC
and ISO maintain registers of currently valid International Standards.
IEC 60617-12:1997, Graphical symbols for diagrams – Part 12: Binary logic elements
IEC 60617-13:1993, Graphical symbols for diagrams – Part 13: Analogue elements
IEC 60747-1:1983, Semiconductor devices – Discrete devices – Part 1: General
IEC 60747-7:2000, Semiconductor devices – Part 7: Bipolar transistors
IEC 60748-2:1997, Semiconductor devices – Integrated circuits – Part 2: Digital integrated
circuits
IEC 60748-3:1986, Semiconductor devices – Integrated circuits – Part 3: Analogue integrated
circuits
IEC 60748-4:1997, Semiconductor devices – Integrated circuits – Part 4: Interface integrated
circuits
3 Terminology
3.1
linear (power) gain G
lin
power gain in the linear region of the power transfer curve P (dBm) = f(P )
o i
NOTE In this region, ΔP (dBm) = ΔP (dBm).
o i
3.2
linear (power) gain flatness ΔΔΔΔG
lin
power gain flatness when the operating point lies in the linear region of the power transfer
curve
3.3
power gain G ,,,, G
p
ratio of the output power to the input power
NOTE Usually the power gain is expressed in decibels.
– 6 – 60747-16-1 © IEC:2001(E)
3.4
(power) gain flatness ΔΔΔΔG
p
difference between the maximum and minimum power gain for a specified input power in a
specified frequency range
3.5
(maximum available) gain reduction ΔΔΔΔG
red
difference in decibels between the maximum and minimum power gains that can be provided
by the gain control
3.6 Output power limiting
3.6.1
output power limiting range
range in which, for rising input power, the output power is limiting
NOTE For specification purposes, the limits of this range are specified by specified lower and upper limit values
for the input power.
3.6.2
limiting output power P
o(ltg)
output power in the range where it is limiting
3.6.3
limiting output power flatness ΔΔP
ΔΔ
o(ltg)
difference between the maximum and minimum output power in the output power limiting
range:
ΔP = P – P
o(ltg) o(ltg,max) o(ltg,min)
3.7
intermodulation distortion P /P
n i
ratio of
the output power of the nth order component to
the output power of the fundamental component,
at a specified input power
3.8
power at the intercept point (for intermodulation products) P
n(IP)
output power at intersection between the extrapolated output powers of the fundamental
component and
...
INTERNATIONAL IEC
STANDARD 60747-16-1
Edition 1.1
2007-03
Edition 1:2001 consolidated with amendment 1:2007
Semiconductor devices –
Part 16-1:
Microwave integrated circuits –
Amplifiers
Reference number
Publication numbering
As from 1 January 1997 all IEC publications are issued with a designation in the
60000 series. For example, IEC 34-1 is now referred to as IEC 60034-1.
Consolidated editions
The IEC is now publishing consolidated versions of its publications. For example,
edition numbers 1.0, 1.1 and 1.2 refer, respectively, to the base publication, the
base publication incorporating amendment 1 and the base publication incorporating
amendments 1 and 2.
Further information on IEC publications
The technical content of IEC publications is kept under constant review by the IEC,
thus ensuring that the content reflects current technology. Information relating to
this publication, including its validity, is available in the IEC Catalogue of
publications (see below) in addition to new editions, amendments and corrigenda.
Information on the subjects under consideration and work in progress undertaken
by the technical committee which has prepared this publication, as well as the list
of publications issued, is also available from the following:
• IEC Web Site (www.iec.ch)
• Catalogue of IEC publications
The on-line catalogue on the IEC web site (http://www.iec.ch/searchpub/cur_fut.htm)
enables you to search by a variety of criteria including text searches, technical
committees and date of publication. On-line information is also available on
recently issued publications, withdrawn and replaced publications, as well as
corrigenda.
• IEC Just Published
This summary of recently issued publications (http://www.iec.ch/online_news/
justpub/jp_entry.htm) is also available by email. Please contact the Customer
Service Centre (see below) for further information.
• Customer Service Centre
If you have any questions regarding this publication or need further assistance,
please contact the Customer Service Centre:
Email: custserv@iec.ch
Tel: +41 22 919 02 11
Fax: +41 22 919 03 00
INTERNATIONAL IEC
STANDARD 60747-16-1
Edition 1.1
2007-03
Edition 1:2001 consolidated with amendment 1:2007
Semiconductor devices –
Part 16-1:
Microwave integrated circuits –
Amplifiers
© IEC 2007 ⎯ Copyright - all rights reserved
No part of this publication may be reproduced or utilized in any form or by any means, electronic or
mechanical, including photocopying and microfilm, without permission in writing from the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch Web: www.iec.ch
PRICE CODE
CQ
Commission Electrotechnique Internationale
International Electrotechnical Commission
МеждународнаяЭлектротехническаяКомиссия
For price, see current catalogue
– 2 – 60747-16-1 © IEC:2001+A1:2007(E)
CONTENTS
FOREWORD.4
1 Scope.6
2 Normative references .6
3 Terminology .6
4 Essential ratings and characteristics.9
4.1 General .9
4.2 Application related description.10
4.3 Specification of the function .10
4.4 Limiting values (absolute maximum rating system) .12
4.5 Operating conditions (within the specified operating temperature range) .14
4.6 Electrical characteristics.14
4.7 Mechanical and environmental ratings, characteristics and data.16
4.8 Additional information.16
5 Measuring methods .17
5.1 General .17
5.2 Linear (power) gain (G ) .17
lin
5.3 Linear (power) gain flatness (ΔG ) .19
lin
5.4 Power gain (G ).20
p
5.5 (Power) gain flatness (ΔG ) .20
p
5.6 (Maximum available) gain reduction (ΔG ) .21
red
5.7 Limiting output power (P ) .22
o(ltg)
5.8 Output power (P ) .23
o
5.9 Output power at 1 dB gain compression (P ) .24
o(1dB)
5.10 Noise figure (F) .25
5.11 Intermodulation distortion (two-tone) (P /P ).27
1 n
5.12 Power at the intercept point (for intermodulation products) (P ) .29
n(IP)
5.13 Magnitude of the input reflection coefficient (input return loss) (|S |) .30
5.14 Magnitude of the output reflection coefficient (output return loss) (|S |) .31
5.15 Magnitude of the reverse transmission coefficient (isolation) (⏐S ⏐).35
5.16 Conversion coefficient of amplitude modulation to phase modulation (α ) .36
(AM-PM)
5.17 Group delay time (t ).38
d(grp)
5.18 Power added efficiency .39
5.19 nth order harmonic distortion ratio (P /P ) .41
1 nth
5.20 Output noise power (P ).42
N
5.21 Spurious intensity under specified load VSWR (P /P ) .44
o sp
5.22 Adjacent channel power ratio (P /P ) .46
o(mod) adj
6 Verifying methods.49
6.1 Load mismatch tolerance (Ψ ) .49
L
6.2 Source mismatch tolerance (Ψ ) .52
S
6.3 Load mismatch ruggedness (Ψ ).55
R
60747-16-1 © IEC:2001+A1:2007(E) – 3 –
Figure 1 – Circuit for the measurements of linear gain .17
Figure 2 – Basic circuit for the measurement of the noise figure .25
Figure 3 – Basic circuit for the measurements of two-tone intermodulation distortion .27
Figure 4 – Circuit for the measurements of magnitude of input/output reflection
coefficient (input/output return loss).30
Figure 5 – Circuit for the measurement of output reflection coefficient .33
Figure 6 – Circuit for the measurement of isolation .35
Figure 7 – Basic circuit for the measurement of α .36
(AM-PM)
Figure 8 – Circuit for the measurement of the power added efficiency.39
Figure 9 – Circuit for the measurements of the nth order harmonic distortion ratio .41
Figure 10 – Circuit diagram for the measurement of the output noise power .43
Figure 11 – Circuit diagram for the measurement of the spurious intensity.45
Figure 12 – Circuit for the measurement of the adjacent channel power ratio.47
Figure 13 – Circuit for the verification of load mismatch tolerance in method 1 .50
Figure 14 – Circuit for the verification of load mismatch tolerance in method 2 .51
Figure 15 – Circuit for the verification of source mismatch tolerance in method 1.53
Figure 16 – Circuit for the verification of source mismatch tolerance in method 2.54
Figure 17 – Circuit for the verification of load mismatch ruggedness .55
– 4 – 60747-16-1 © IEC:2001+A1:2007(E)
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 16-1: Microwave integrated circuits – Amplifiers
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with an IEC Publication.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-16-1 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
This consolidated version of IEC 60747-16-1 consists of the first edition (2001) [documents
47E/200/FDIS and 47E/204/RVD] and its amendment 1 (2007) [documents 47E/305/FDIS and
47E/317/RVD].
The technical content is therefore identical to the base edition and its amendment and has
been prepared for user convenience.
It bears the edition number 1.1.
A vertical line in the margin shows where the base publication has been modified by
amendment 1.
60747-16-1 © IEC:2001+A1:2007(E) – 5 –
The committee has decided that the contents of the base publication and its amendments will
remain unchanged until the maintenance result date indicated on the IEC web site under
"http://webstore.iec.ch" in the data related to the specific publication. At this date,
the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
A bilingual version of this standard may be issued at a later date.
– 6 – 60747-16-1 © IEC:2001+A1:2007(E)
SEMICONDUCTOR DEVICES –
Part 16-1: Microwave integrated circuits – Amplifiers
1 Scope
This part of IEC 60747 provides the terminology, the essential ratings and characteristics, as
well as the measuring methods for integrated circuit microwave power amplifiers.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For da
...
IEC 60747-16-1 ®
Edition 1.0 2001-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 16-1: Microwave integrated circuits – Amplifiers
Dispositifs à semiconducteurs –
Partie 16-1: Circuits intégrés hyperfréquences – Amplificateurs
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IEC 60747-16-1 ®
Edition 1.0 2001-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 16-1: Microwave integrated circuits – Amplifiers
Dispositifs à semiconducteurs –
Partie 16-1: Circuits intégrés hyperfréquences – Amplificateurs
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX X
ICS 31.080.99 ISBN 978-2-83220-356-9
– 2 – 60747-16-1 © IEC:2001
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terminology . 6
4 Essential ratings and characteristics . 8
4.1 General . 8
4.2 Application related description . 9
4.3 Specification of the function . 10
4.4 Limiting values (absolute maximum rating system) . 11
4.5 Operating conditions (within the specified operating temperature range) . 13
4.6 Electrical characteristics . 13
4.7 Mechanical and environmental ratings, characteristics and data . 15
4.8 Additional information . 15
5 Measuring methods . 15
5.1 General . 15
5.2 Linear (power) gain (G ) . 16
lin
5.3 Linear (power) gain flatness (∆G ) . 18
lin
5.4 Power gain (G ) . 19
p
5.5 (Power) gain flatness (∆G ) . 19
p
5.6 (Maximum available) gain reduction (∆G ) . 20
red
5.7 Limiting output power (P ) . 21
o(ltg)
5.8 Output power (P ) . 22
o
5.9 Output power at 1 dB gain compression (P ) . 23
o(1dB)
5.10 Noise figure (F) . 24
5.11 Intermodulation distortion (P /P ) (two-tone) . 26
n 1
5.12 Power at the intercept point (for intermodulation products) (P ) . 28
n(IP)
5.13 Magnitude of the input reflection coefficient (input return loss) (s ) . 29
5.14 Magnitude of the output reflection coefficient (output return loss) (s ) . 30
5.15 Magnitude of the reverse transmission coefficient (isolation) (s ) . 34
5.16 Conversion coefficient of amplitude modulation to phase modulation (α ) . 35
(AM-PM)
5.17 Group delay time (t ) . 37
d(grp)
5.18 Power added efficiency . 38
5.19 nth order harmonic distortion ratio (P P ) . 40
nth 1
/
5.20 Output noise power (P ) . 41
N
5.21 Spurious intensity under specified load VSWR (P /P ) . 43
sp o
60747-16-1 © IEC:2001 – 3 –
Figure 1 – Circuit for the measurements of linear gain . 16
Figure 2 – Basic circuit for the measurement of the noise figure . 24
Figure 3 – Basic circuit for the measurements of two-tone intermodulation distortion . 26
Figure 4 – Circuit for the measurements of magnitude of input/output reflection
coefficient (input/output return loss) . 29
Figure 5 – Circuit for the measurement of output reflection coefficient . 32
Figure 6 – Circuit for the measurement of isolation . 34
Figure 7 – Basic circuit for the measurement of α . 35
(AM-PM)
Figure 8 – Circuit for the measurement of the power added efficiency . 38
Figure 9 – Circuit for the measurements of the nth order harmonic distortion ratio . 40
Figure 10 – Circuit diagram for the measurement of the output noise power . 42
Figure 11 – Circuit diagram for the measurement of the spurious intensity . 44
– 4 – 60747-16-1 © IEC:2001
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 16-1: Microwave integrated circuits – Amplifiers
FOREWORD
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of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-16-1 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
This bilingual version (2012-09) corresponds to the monolingual English version, published in
2001-11.
The text of this standard is based on the following documents:
FDIS Report on voting
47E/200/FDIS 47E/204/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
The French version of this standard has not been voted upon.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 3.
60747-16-1 © IEC:2001 – 5 –
The committee has decided that the contents of this publication will remain unchanged
until 2004. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
– 6 – 60747-16-1 © IEC:2001
SEMICONDUCTOR DEVICES –
Part 16-1: Microwave integrated circuits – Amplifiers
1 Scope
This part of IEC 60747 provides the terminology, the essential ratings and characteristics, as
well as the measuring methods for integrated circuit microwave power amplifiers.
2 Normative refere
...
IEC 60747-16-1 ®
Edition 1.2 2017-02
CONSOLIDATED VERSION
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
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Semiconductor devices –
Part 16-1: Microwave integrated circuits – Amplifiers
Dispositifs à semiconducteurs –
Partie 16-1: Circuits intégrés hyperfréquences – Amplificateurs
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IEC 60747-16-1 ®
Edition 1.2 2017-02
CONSOLIDATED VERSION
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices –
Part 16-1: Microwave integrated circuits – Amplifiers
Dispositifs à semiconducteurs –
Partie 16-1: Circuits intégrés hyperfréquences – Amplificateurs
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99 ISBN 978-2-8322-3986-5
IEC 60747-16-1 ®
Edition 1.2 2017-02
CONSOLIDATED VERSION
REDLINE VERSION
VERSION REDLINE
colour
inside
Semiconductor devices –
Part 16-1: Microwave integrated circuits – Amplifiers
Dispositifs à semiconducteurs –
Partie 16-1: Circuits intégrés hyperfréquences – Amplificateurs
– 2 – IEC 60747-16-1:2001+AMD1:2007
+AMD2:2017 CSV © IEC 2017
CONTENTS
FOREWORD . 7
1 Scope . 9
2 Normative references . 9
3 Terminology Terms and definitions . 10
4 Essential ratings and characteristics . 12
4.1 General . 12
4.1.1 Circuit identification and types . 12
4.2 Application related description . 13
4.2.1 Conformance to system and/or interface information . 13
4.2.2 Overall block diagram . 13
4.2.3 Reference data . 13
4.2.4 Electrical compatibility . 13
4.2.5 Associated devices . 14
4.3 Specification of the function . 14
4.3.1 Detailed block diagram – Functional blocks . 14
4.3.2 Identification and function of terminals . 14
4.3.3 Functional description. 15
4.3.4 Family-related characteristics . 15
4.4 Limiting values (absolute maximum rating system) . 15
4.4.1 Electrical limiting values . 16
4.4.2 Temperatures . 16
4.5 Operating conditions (within the specified operating temperature range) . 17
4.5.1 Power supplies positive and/or negative values . 17
4.5.2 Initialization sequences (where appropriate) . 17
4.5.3 Input voltage(s) (where appropriate) . 17
4.5.4 Output current(s) (where appropriate) . 17
4.5.5 Voltage and/or current of other terminal(s) . 17
4.5.6 External elements (where appropriate) . 17
4.5.7 Operating temperature range . 17
4.6 Electrical characteristics . 17
4.6.1 Static characteristics . 17
4.6.2 Dynamic or a.c. characteristics . 18
4.7 Mechanical and environmental ratings, characteristics and data . 19
4.8 Additional information . 19
4.8.1 Equivalent input and output circuit . 19
4.8.2 Internal protection . 19
4.8.3 Capacitors at terminals . 19
4.8.4 Thermal resistance . 19
4.8.5 Interconnections to other types of circuit . 19
4.8.6 Effects of externally connected component(s) . 19
4.8.7 Recommendations for any associated device(s) . 19
4.8.8 Handling precautions . 19
4.8.9 Application data . 20
4.8.10 Other application information . 20
4.8.11 Date of issue of the data sheet . 20
5 Measuring methods . 20
5.1 General . 20
5.1.1 Characteristic impedances . 20
5.1.2 General precautions . 20
5.1.3 Handling precautions . 20
5.1.4 Types . 20
+AMD2:2017 CSV © IEC 2017
5.2 Linear (power) gain (G ) . 20
lin
5.2.1 Purpose . 20
5.2.2 Circuit diagram . 21
5.2.3 Principle of measurement . 21
5.2.4 Circuit description and requirements . 21
5.2.5 Precautions to be observed . 21
5.2.6 Measurement procedure . 22
5.2.7 Specified conditions . 22
5.3 Linear (power) gain flatness (∆G ) . 22
lin
5.3.1 Purpose . 22
5.3.2 Circuit diagram . 22
5.3.3 Principle of measurement . 22
5.3.4 Circuit description and requirements . 22
5.3.5 Precautions to be observed . 22
5.3.6 Measurement procedure . 22
5.3.7 Specified conditions .
...
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