Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method

IEC TS 62607:2022 establishes a standardized method to determine the key control characteristic
carrier concentration  for semiconducting two-dimensional materials by the
field effect transistor (FET) method.  For semiconducting two-dimensional materials, the carrier concentration is evaluated using a field effect transistor (FET) test by a measurement of the voltage shift obtained from transfer curve upon doping process. The FET test structure consists of three terminals of source, drain, and gate where voltage is applied to induce the transistor action. Transfer curves are obtained by measuring drain current while applying varied gate voltage and constant drain voltage with respect to the source which is grounded.

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IEC TS 62607-6-16:2022 - Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method Released:11/17/2022
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IEC TS 62607-6-16 ®
Edition 1.0 2022-11
Nanomanufacturing – Key control characteristics –
Part 6-16: Two-dimensional materials – Carrier concentration: Field effect
transistor method
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IEC TS 62607-6-16 ®
Edition 1.0 2022-11
Nanomanufacturing – Key control characteristics –

Part 6-16: Two-dimensional materials – Carrier concentration: Field effect

transistor method
ICS 07.030; 07.120 ISBN 978-2-8322-6054-8

– 2 – IEC TS 62607-6-16:2022  IEC 2022
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
3.1 General terms . 8
3.2 Key control characteristics measured in accordance with this document . 8
3.3 Terms related to the measurement method . 9
4 General . 9
4.1 Measurement principle . 9
4.2 Sample preparation method . 9
4.2.1 Sample preparation . 9
4.2.2 Fabrication of FET . 9
4.3 Description of measurement equipment . 10
4.4 Ambient conditions during measurement . 11
5 Measurement procedure . 12
5.1 Calibration of measurement equipment . 12
5.2 Detailed protocol of the measurement procedure . 12
6 Data analysis and interpretation of results . 12
6.1 General . 12
6.2 When the minimum conductance neutral point is clear . 12
6.3 When the minimum conductance neutral point is unclear . 13
7 Results to be reported . 13
7.1 Cover sheet . 13
7.2 Product or sample identification . 14
7.3 Measurement conditions . 14
7.4 Measurement specific information . 14
7.5 Measurement results . 14
Annex A (informative) Graphene FET . 15
A.1 Background. 15
A.2 Test report . 15
Annex B (informative) Graphene/hBN/MoS heterostructure memory FET . 16
B.1 Background. 16
B.2 Test report . 18
Annex C (informative) MoTe FET . 19
C.1 Background. 19
C.2 Test report . 20
Annex D (informative) WSe FET . 21
D.1 Background. 21
D.2 Test report . 22
Bibliography . 23

Figure 1 – Schematic of a back-gated graphene FET (inset: top view of the optical
microscopic image) . 10
Figure 2 – Experimental setup for measurements of electrical properties of FET device. 11

Figure 3 – Voltage shift obtained from transfer curves upon plasma doping with various
plasma treatments onto the graphene, using 300-nm-thick SiO back gate insulator . 13
Figure 4 – Voltage shift obtained from transfer curves of MoS FET . 13
Figure B.1 – Heterostructure FETs: (a) schematic view and circuit diagram of the
fabricated device; (b) optical microscopic photograph of GBM FET; (c) optical
microscopic photograph of MBG FET . 16
Figure B.2 – Voltage shift obtained from transfer curves of two types of memory device
upon charge injection . 17
Figure C.1 – Optical microscopic image of MoTe FET and the thickness of 2D MoTe
2 2
measured by AFM . 19
Figure C.2 – Voltage shift observed from transfer curves measured by using 2D
MoTe FET . 20
Figure D.1 –WSe FET . 21
Figure D.2 – Transfer curves of 2D WSe FET devices before and after doping with
contacts (inset: output curves of devices before and after doping) . 22

Table 1 – Specification of key control characteristics, 2D carrier concentration . 12
Table A.1 – 2D carrier concentration measured from graphene-FET for different
doping-inducing Ar plasma treatment times . 15
Table B.1 – Carrier concentration derived from the electrical characteristics of GBM
and MBG . 18

– 4 – IEC TS 62607-6-16:2022  IEC 2022
Part 6-16: Two-dimensional materials –
Carrier concentration: Field effect transistor method

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IEC TS 62607-6-16 has been prepared by IEC technical committee 113: Nanotechnology for
electrotechnical products and systems. It is a Technical Specification.
The text of this Technical Specification is based on the following documents:
Draft Report on voting
113/679/DTS 113/698/RVDTS
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this Techni

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