IEC TS 62607-6-16:2022
(Main)Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method
Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method
IEC TS 62607:2022 establishes a standardized method to determine the key control characteristic
carrier concentration for semiconducting two-dimensional materials by the
field effect transistor (FET) method. For semiconducting two-dimensional materials, the carrier concentration is evaluated using a field effect transistor (FET) test by a measurement of the voltage shift obtained from transfer curve upon doping process. The FET test structure consists of three terminals of source, drain, and gate where voltage is applied to induce the transistor action. Transfer curves are obtained by measuring drain current while applying varied gate voltage and constant drain voltage with respect to the source which is grounded.
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Standards Content (Sample)
IEC TS 62607-6-16 ®
Edition 1.0 2022-11
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 6-16: Two-dimensional materials – Carrier concentration: Field effect
transistor method
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IEC TS 62607-6-16 ®
Edition 1.0 2022-11
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key control characteristics –
Part 6-16: Two-dimensional materials – Carrier concentration: Field effect
transistor method
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 07.030; 07.120 ISBN 978-2-8322-6054-8
– 2 – IEC TS 62607-6-16:2022 IEC 2022
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
3.1 General terms . 8
3.2 Key control characteristics measured in accordance with this document . 8
3.3 Terms related to the measurement method . 9
4 General . 9
4.1 Measurement principle . 9
4.2 Sample preparation method . 9
4.2.1 Sample preparation . 9
4.2.2 Fabrication of FET . 9
4.3 Description of measurement equipment . 10
4.4 Ambient conditions during measurement . 11
5 Measurement procedure . 12
5.1 Calibration of measurement equipment . 12
5.2 Detailed protocol of the measurement procedure . 12
6 Data analysis and interpretation of results . 12
6.1 General . 12
6.2 When the minimum conductance neutral point is clear . 12
6.3 When the minimum conductance neutral point is unclear . 13
7 Results to be reported . 13
7.1 Cover sheet . 13
7.2 Product or sample identification . 14
7.3 Measurement conditions . 14
7.4 Measurement specific information . 14
7.5 Measurement results . 14
Annex A (informative) Graphene FET . 15
A.1 Background. 15
A.2 Test report . 15
Annex B (informative) Graphene/hBN/MoS heterostructure memory FET . 16
B.1 Background. 16
B.2 Test report . 18
Annex C (informative) MoTe FET . 19
C.1 Background. 19
C.2 Test report . 20
Annex D (informative) WSe FET . 21
D.1 Background. 21
D.2 Test report . 22
Bibliography . 23
Figure 1 – Schematic of a back-gated graphene FET (inset: top view of the optical
microscopic image) . 10
Figure 2 – Experimental setup for measurements of electrical properties of FET device. 11
Figure 3 – Voltage shift obtained from transfer curves upon plasma doping with various
plasma treatments onto the graphene, using 300-nm-thick SiO back gate insulator . 13
Figure 4 – Voltage shift obtained from transfer curves of MoS FET . 13
Figure B.1 – Heterostructure FETs: (a) schematic view and circuit diagram of the
fabricated device; (b) optical microscopic photograph of GBM FET; (c) optical
microscopic photograph of MBG FET . 16
Figure B.2 – Voltage shift obtained from transfer curves of two types of memory device
upon charge injection . 17
Figure C.1 – Optical microscopic image of MoTe FET and the thickness of 2D MoTe
2 2
measured by AFM . 19
Figure C.2 – Voltage shift observed from transfer curves measured by using 2D
MoTe FET . 20
Figure D.1 –WSe FET . 21
Figure D.2 – Transfer curves of 2D WSe FET devices before and after doping with
contacts (inset: output curves of devices before and after doping) . 22
Table 1 – Specification of key control characteristics, 2D carrier concentration . 12
Table A.1 – 2D carrier concentration measured from graphene-FET for different
doping-inducing Ar plasma treatment times . 15
Table B.1 – Carrier concentration derived from the electrical characteristics of GBM
and MBG . 18
– 4 – IEC TS 62607-6-16:2022 IEC 2022
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 6-16: Two-dimensional materials –
Carrier concentration: Field effect transistor method
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
IEC TS 62607-6-16 has been prepared by IEC technical committee 113: Nanotechnology for
electrotechnical products and systems. It is a Technical Specification.
The text of this Technical Specification is based on the following documents:
Draft Report on voting
113/679/DTS 113/698/RVDTS
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this Technical Specification is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC TS 62607 series, published under the general title
Nanomanufacturing – Key control characteristics, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The "colour inside" logo on the cover page of this document indicates that it
contains colours which are considered to be useful for the correct understanding of its
contents. Users should therefore print this document using a colour printer.
– 6 – IEC TS 62607-6-16:2022 IEC 2022
INTRODUCTION
Atomically thin 2D materials are expected to be used for future electrical sub-systems or
electronic device applications. For these applications, the materials need to be doped with
dopants to generate carriers. In contrast to 3D bulk materials, carrier concentrations in 2D
materials are difficult to measure directly due to their limited thickness.
– Different from conventional 3D bulk materials in which doping effect is induced from
activation of substitutional dopant atoms, the doping effect in 2D materials is mostly induced
by generation of free carriers, for example electrons by using plasma treatment, chemical
treatment, etc.
– In the 3D bulk materials, carrier concentration can be obtained by measuring concentration
of dopant atoms under the assumption that both concentrations are the same. Therefore, it
is possible to measure the doping concentration in 3D bulk materials using secondary ion
mass spectroscopy (SIMS), which measures the concentration of dopant atoms, and using
I-V or C-V characterization, which measures the concentration of free charge carriers such
as electrons and holes [1] .
– In contrast, in the 2D materials, carrier concentration needs to be measured for carriers
such as electrons and holes which are induced from external means such as plasma
treatment or chemical treatment.
For this reason, a standard method to determine the carrier concentration needs to be
established for 2D materials.
—————————
Numbers in square brackets refer to the Bibliography.
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 6-16: Two-dimensional materials –
Carrier concentration: Field effect transistor method
1 Scope
This part of IEC TS 62607 establishes a standardized method to determine the key control
characteristic
• carrier concentration
for semiconducting two-dimensional materials by the
• field effect transistor (FET) method.
For semiconducting two-dimensional materials, the carrier concentration is evaluated using a
field effect transistor (FET) test by a measurement of the voltage shift obtained from transfer
curve upon doping process. The FET test structure consists of three terminals of source, drain,
and gate where voltage is applied to induce the transistor action. Transfer curves are obtained
by measuring drain current while applying varied gate voltage and constant drain voltage with
respect to the source which is grounded.
• The method is applicable to semiconducting two-dimensional materials with a bandgap like
that in transition metal dichalcogenides (MoS , MoTe , WS , WSe , etc.) and black
2 2 2 2
phosphorous. Pristine graphene shows semi-metallic characteristics without bandgap, and
therefore this method is not applicable to pristine graphene. However, it can be used for
other graphenes with bandgap (for example, semiconducting graphene oxide).
• It is likely that the measurement results will help to qualify technologies if they are usable
for future electrical sub-systems or electronic device applications.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
– 8 – IEC TS 62607-6-16:2022 IEC 2022
3.1 General terms
3.1.1
key control characteristic
KCC
key performance indicator
material property or intermediate product characteristic which can affect safety or compliance
with regulations, fit, function, performance, quality, reliability or subsequent processing of the
final product
Note 1 to entry: The measurement of a key control characteristic is described in a standardized measurement
procedure with known accuracy and precision.
Note 2 to entry: It is possible to define more than one measurement method for a key control characteristic if the
correlation of the results is well-defined and known.
3.1.2
bilayer graphene
2LG
two-dimensional material consisting of two well-defined stacked graphene layers
Note 1 to entry: If the stacking registry is known, it can be specified separately, for example, as "Bernal stacked
bilayer graphene".
[SOURCE: ISO/TS 80004-13:2017 [2], 3.1.2.6]
3.1.3
few-layer graphene
FLG
two-dimensional material consisting of three to ten well-defined stacked graphene layers
[SOURCE: ISO/TS 80004-13:2017 [2], 3.1.2.10]
3.1.4
two-dimensional material
2D material
material, consisting of one or several layers with the atoms in each layer strongly bonded to
neighbouring atoms in the same layer, which has one dimension, its thickness, in the nanoscale
or smaller, and the other two dimensions generally at larger scales
Note 1 to entry: The number of layers when a two-dimensional material becomes a bulk material varies depending
on both the material being measured and its properties. In the case of graphene layers, it is a two-dimensional
material up to ten layers thick for electrical measurements, beyond which the electrical properties of the material are
not distinct from those for the bulk (also known as graphite).
Note 2 to entry: Interlayer bonding is distinct from and weaker than intralayer bonding.
Note 3 to entry: Each layer may contain more than one element.
Note 4 to entry: A two-dimensional material can be a nanoplate.
[SOURCE ISO/TS 80004-13:2017 [2], 3.1.1.1]
3.2 Key control characteristics measured in accordance with this document
3.2.1
2D carrier concentration
characteristic described by the areal density of electrons or holes free to move in two
dimensions due to the atomical thinness of 2D materials that restricts the movement of the
carriers in the third direction
-2
Note 1 to entry: The unit of 2D carrier concentration is [cm ]
Note 2 to entry: In general, increased doping leads to increased conductivity due to the higher concentration of the
charge carriers. Carrier density in conventional semiconductors is usually tuned with substitutional doping. However,
substi
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