IEC 62830-6:2019

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices

IEC 62830-6:2019(E) defines terms, definitions, symbols, and specifies configurations and test methods to be used to evaluate and determine the performance characteristics of vertical contact mode triboelectric energy harvesting devices for practical use. This document is applicable to energy harvesting devices as power sources for wearable devices and wireless sensors used in healthcare monitoring, consumer electronics, general industries, military and aerospace applications without any limitations on device technology and size.

General Information

• Status: Published
• Publication Date: 24-Jul-2019
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: TC 47 - Semiconductor devices
• Drafting Committee: WG 7 - TC 47/WG 7
• Current Stage: PPUB - Publication issued
• Start Date: 25-Jul-2019
• Completion Date: 16-Aug-2019

Standards Content (Sample)

IEC 62830-6 ®
Edition 1.0 2019-07
INTERNATIONAL
STANDARD
Semiconductor devices – Semiconductor devices for energy harvesting and
generation –
Part 6: Test and evaluation methods for vertical contact mode triboelectric
energy harvesting devices
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IEC 62830-6 ®
Edition 1.0 2019-07
INTERNATIONAL
STANDARD
Semiconductor devices – Semiconductor devices for energy harvesting and

generation –
Part 6: Test and evaluation methods for vertical contact mode triboelectric

energy harvesting devices
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8322-7165-0

– 2 – IEC 62830-6:2019 © IEC 2019
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
3.1 General terms . 6
3.2 Triboelectric transducer . 7
3.3 Characteristic parameters . 8
4 Essential ratings and characteristics . 10
4.1 Identification and type . 10
4.2 Limiting values and operating conditions . 10
4.3 Additional information . 10
5 Test method . 10
5.1 General . 10
5.2 Electrical characteristics . 12
5.2.1 Test procedure . 12
5.2.2 Open-circuit voltage . 13
5.2.3 Short-circuit current . 13
5.2.4 Output voltage . 14
5.2.5 Output current . 14
5.2.6 Output power . 15
5.2.7 Optimal load impedance . 15
5.2.8 Maximum output power . 15
5.2.9 Stored charge . 15
5.2.10 Capacitance . 16
5.3 Mechanical characteristics . 17
5.3.1 Test procedure . 17
5.3.2 Contact area . 17
5.3.3 Input force . 18
5.3.4 Input frequency . 19
5.3.5 Relative humidity range . 19
5.3.6 Temperature range . 20
Annex A (informative) Vertical contact modes . 21
A.1 Double electrode mode . 21
A.2 Single electrode mode . 21
Annex B (informative) Test setup for vertical contact mode triboelectric energy
harvester . 22
B.1 Example of test setup and characterization . 22
B.2 Experimental data . 22
Bibliography . 24

Figure 1 – Vertical contact mode triboelectric energy harvester . 7
Figure 2 – Fundamental theories of four working modes of vertical contact mode
triboelectric energy harvester . 8
Figure 3 – Equivalent circuit of triboelectric energy harvester . 9
Figure 4 – Measurement procedure of vertical contact mode triboelectric energy
harvester . 11

Figure 5 – Test setup for the electrical characteristics of vertical contact mode
triboelectric energy harvester . 12
Figure 6 – Instantaneous open-circuit output voltage characteristics . 13
Figure 7 – Instantaneous short-circuit output current characteristics . 14
Figure 8 – Output voltage and current of triboelectric energy harvester under different

loads. 14
Figure 9 – Output power of triboelectric energy harvester at various external loads . 15
Figure 10 – Stored charging time relationship at different load capacitances of
triboelectric energy harvester . 16
Figure 11 – Capacitance between the two electrodes of a triboelectric energy harvester . 16
Figure 12 – Block diagram of a test setup for evaluating the reliability of vertical
contact mode triboelectric energy harvester . 17
Figure 13 – Instantaneous open-circuit voltage characteristics for four different contact

areas of contact mode triboelectric energy harvester . 18
Figure 14 – Output voltage and current under different input forces on vertical contact
mode triboelectric energy harvester . 18
Figure 15 – Output voltage and current under different working frequencies on vertical
contact mode triboelectric energy harvester . 19
Figure 16 – Triboelectric output voltage as a function of relative humidity . 20
Figure 17 – Open-circuit voltage of triboelectric energy harvester at different
temperatures . 20
Figure A.1 – Operation mode of vertical contact mode triboelectric energy harvester . 21
Figure B.1 – Measurement setup for vertical contact mode triboelectric energy
harvester . 22
Figure B.2 – Electrical characterization results of the pressure-voltage relationship . 23

Table 1 – Specification parameters for vertical contact mode triboelectric energy
harvester . 10

– 4 – IEC 62830-6:2019 © IEC 2019
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
SEMICONDUCTOR DEVICES FOR
ENERGY HARVESTING AND GENERATION –

Part 6: Test and evaluation methods for vertical
contact mode triboelectric energy harvesting devices

FOREWORD
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International Standard IEC 62830-6 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/2573/FDIS 47/2585/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

A list of all parts in the IEC 62830 series, published under the general title Semiconductor
devices – Semiconductor devices for energy harvesting and generation, can be found on the
IEC website.
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC website under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
A bilingual version of this publication may be issued at a later date.

– 6 – IEC 62830-6:2019 © IEC 2019
SEMICONDUCTOR DEVICES –
SEMICONDUCTOR DEVICES FOR
ENERGY HARVESTING AND GENERATION –

Part 6: Test and evaluation methods for vertical
contact mode triboelectric energy harvesting devices

1 Scope
This part of IEC 62830 defines terms, definitions, symbols, and specifies configurations and
test methods to be used to evaluate and determine the performance characteristics of vertical
contact mode triboelectric energy harvesting devices for practical use. This document is
applicable to energy harvesting devices as power sources for wearable devices and wireless
sensors used in healthcare monitoring, consumer electronics, general industries, military and
aerospace applications without any limitations on device technology and size.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1 General terms
3.1.1
vertical contact
physical touching of two objects having relative movement at right angles to their planes at
the point of contact
Note 1 to entry: A vertical contact mode triboelectric energy harvester which converts physical contact to
electricity and is comprised of dielectric materials, surface electrode, external load, and air gap between dielectric
materials, is shown in Figure 1.
Note 2 to entry: The theories for four working modes of a contact triboelectric energy harvester are shown in
Figure 2.
Key
Configuration of energy harvester Components to operate an energy harvester
El 1, El 2 electrode F pressing and releasing force
DE 1, DE 2 dielectric material R external load

Figure 1 – Vertical contact mode triboelectric energy harvester
3.1.2
nanogenerator
type of technology that converts mechanical/thermal energy as produced by small-scale
physical change into electricity
3.2 Triboelectric transducer
3.2.1
contact based energy harvester
energy transducer that transforms physical energy due to deceleration/acceleration of the
moving contact into electrical energy
3.2.2
triboelectric effect
type of contact electrification in which certain materials become electrically charged after they
come into frictional contact and separation action with a different material
3.2.3
triboelectric series
list of materials, some of which have a greater tendency to become positive (+) and the others
have a greater tendency to become negative (−)
3.2.4
triboelectric transducer
energy converter to generate electricity from mechanical energy by means of triboelectric
effect
3.2.5
surface roughness
quantified surface texture by the deviations in the direction of the normal vector of a
real surface from its ideal form

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a) dielectric-to-dielectric contact b) dielectric-to-conductor
double electrode mode contact double electrode mode

c) dielectric-to-primary conductor d) dielectric-to-conductor contact
contact single electrode mode single electrode mode

Key
Parameters of basic operation
d dielectric thickness Q transferred charge
x(t) gap between dielectric materials V potential difference
σ charge g gap between two electrodes
NOTE: The two major vertical contact modes, i.e. double electrode mode and single electrode mode, are
described in Annex A (informative).
Figure 2 – Fundamental theories of four working modes
of vertical contact mode triboelectric energy harvester
3.3 Characteristic parameters
3.3.1
equivalent circuit
arrangement of ideal circuit elements that has circuit parameters, over a range of interest,
electrically equivalent to those of a particular circuit or device
Note 1 to entry: A vertical contact mode triboelectric energy harvester can be shown into parts as shown in
Figure 3. The equivalent circuit consists of capacitance C which stores the charge as +Q and -Q, open-circuit
voltage source V and external load R.
oc
a) b)
Key parameters
C capacitance R external load
TENG load
V
d dielectric thickness open-circuit voltage
TENG
TENG Tribo-electric nano-generator x(t) gap between dielectric materials
k
m movable mass spring
z
c damper u , u substrates
z z1 z2
Figure 3 – Equivalent circuit of triboelectric energy harvester
3.3.2
optimum load impedance
R
opt
value of load impedance at which the load absorbs the maximum energy
3.3.3
contact area
area of physical contact of one object with the other object
Note 1 to entry: When two objects touch, a certain portion of their surface areas will be in contact with each
other. The contact area is the fraction of this area that consists of the atoms of one object in contact with the atoms
of the other object. Because objects are never perfectly flat due to asperities, the actual contact area (on a
microscopic scale) is usually much less than the contact area apparent on a macroscopic scale. The contact area
can depend on the normal force between the two objects due to deformation.
3.3.4
input frequency
rate at which a repetitive force is applied
3.3.5
surface contact time
time of contact between two triboelectric surfaces
Note 1 to entry: The bigger the surface contact, the greater the net charge on the two surfaces after separation.
3.3.6
relative humidity range
range of humidity as measured on the enclosure over which the energy harvester will not
sustain permanent damage though not necessarily functioning within the certain tolerances

– 10 – IEC 62830-6:2019 © IEC 2019
3.3.7
temperature range
range of temperature as measured on the enclosure over which the energy harvester will not
sustain permanent damage though not necessarily functioning within the specified tolerances
4 Essential ratings and characteristics
4.1 Identi
...