IEC 60747-4:1991/AMD2:1999

Amendment 2 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors

General Information

• Status: Published
• Publication Date: 15-Apr-1999
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47E - Discrete semiconductor devices
• Current Stage: DELPUB - Deleted Publication
• Completion Date: 23-Aug-2007

Relations

• Amends: IEC 60747-4:1991 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
• Effective Date: 05-Sep-2023
• Revised: IEC 60747-4:2007 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
• Effective Date: 05-Sep-2023

Standards Content (Sample)

INTERNATIONAL
IEC
STANDARD
60747-4
AMENDMENT 2
1999-04
Amendment 2
Semiconductor devices – Discrete devices
Part 4:
Microwave devices
Amendement 2
Dispositifs à semiconducteurs –
Dispositifs discrets
Quatrième partie:
Diodes et transistors hyperfréquences

 IEC 1999 Droits de reproduction réservés  Copyright - all rights reserved
International Electrotechnical Commission 3, rue de Varembé Geneva, Switzerland
Telefax: [phone] e-mail: [e-mail] IEC web site http: //www.iec.ch
CODE PRIX
Commission Electrotechnique Internationale
PRICE CODE X
International Electrotechnical Commission
Pour prix, voir catalogue en vigueur
For price, see current catalogue

– 2 – 60747-4 amend. 2 © IEC:1999(E)

FOREWORD
This amendment has been prepared by subcommittee 47E: Discrete semiconductor devices, of

IEC technical committee 47: Semiconductor devices.

The text of this amendment is based on the following documents:

FDIS Report on voting
47E/123/FDIS 47E/124/RVD
Full information on the voting for the approval of this amendment can be found in the report on
voting indicated in the above table.
A bilingual version of this amendment may be issued at a later date.
––––––––––––––
Amend the title of this standard on the cover page, the title page, and on pages 7 and 11 as
follows:
SEMICONDUCTOR DEVICES – DISCRETE DEVICES –
Part 4: Microwave devices
Page 5
CONTENTS
Add the title of Chapter VIII as follows and renumber chapter VIII as chapter IX:
CHAPTER VIII: INTEGRATED CIRCUIT MICROWAVE AMPLIFIERS
1 Terminology
2 Essential ratings and characteristics
3 Measuring methods
60747-4 Amend. 2 © IEC:1999(E) – 3 –

Page 147
CHAPTER VII: FIELD EFFECT TRANSISTORS

2.1.4 Powers
Replace this subclause by the following new subclause:

2.1.4 Powers
Output power at 1 dB gain compression P
o(1dB)
or:
Output power at specified input power P
o
Power gain at 1 dB gain compression G
p(1dB)
Power added efficiency η
add
Associated (power) gain G
as
Maximum available gain (Note 1) G
a(max)
Minimum noise figure F
min
Source reflection factor for minimum noise figure (Notes 2 and 3) r
GFmin
R
Equivalent input noise resistance
n
NOTE 1 – The abbreviation "MAG" is still in common use for maximum available gain.
*
NOTE 2 – For source reflection coefficient (factor), see 5.3.3 of IEC 60747-7, Chapter II .
NOTE 3 – The symbol "Γ " is still in common use for the source reflection factor for minimum noise figure.
opt
Page 149
2.2.3 Power
Add the following definitions:
Minimum noise figure
The minimum value of the noise figure that can be obtained through adjustment of the source
impedance under specified bias condition and a specified frequency.

Equivalent input noise resistance
The quotient of the equivalent input noise voltage and the equivalent input noise current (see
**
5.4.9 and 5.4.10 of IEC 60747-1, Chapter IV ).
––––––––
*
Semiconductor devices – Discrete devices – Part 7: Bipolar transistors
IEC 60747-7 (all parts),
**
IEC 60747-1:1983, Semiconductor devices – Discrete devices – Part 1: General

– 4 – 60747-4 amend. 2 © IEC:1999(E)

Page 153
3.2.2 RF characteristics
Add the following new essential ratings and characteristics:
Categories
3.2.2.8 Minimum noise figure
AB
Maximum value under specified conditions +

3.2.2.9 Source reflection factor for minimum noise figure
Maximum and minimum values under specified conditions +
NOTE – Maximum and minimum values respectively should be prescribed for magnitude
and angle.
3.2.2.10 Equivalent input noise resistance
Maximum and minimum values under specified conditions
+
4 Measurement methods
Replace subclauses 4.10 and 4.11 by the following new subclause 4.10:
4.10 Noise figure (F) and associated gain (G )
as
4.10.1 Purpose
To measure the noise figure of a microwave field-effect transistor under specified conditions.
4.10.2 Circuit diagram
Frequency
RF generator
meter
Noise
Noise and
Low noise
Mixer
source
gain
amplifier
meter
A
Isolator
Isolator
Input Input
Device
Bias impedance
impedance Bias
being
network
matching matching
network
B C
measured
network
network
I
A DS
V
V V V
V V GS DS
DS
GS
IEC  575/99
Figure 46 – Basic circuit for the measurement of the noise figure

60747-4 Amend. 2 © IEC:1999(E) – 5 –

4.10.3 Principle of measurements

The noise figure F of the device being measured is derived from the following equation.

F / 10
 2 
10 − 1
(F − L ) / 10
12 1
 
F = 10 log 10 − (1)
G / 10
 
m
 
where
F is the overall noise figure;
L is the circuit loss from point A to B;

F is the noise figure after point C at the output stage, and
G is the associated gain of the device being measured.
as
F, F , F , L and G are expressed in decibels. The noise figure measurement is carried out
12 2 1 as
by using the hot and cold measurement method. F , F and G are calculated as follows:
12 2 as
ENR /10
 
 
F = 10 log (2)
 
(P / P ) − 1
N1 N2
 
ENR / 10
 
 
F = 10 log (3)
 
(P / P ) − 1
N3 N4
 
 P − P 
N1 N2
 
G = 10 log (4)
as
 
P − P
 N3 N4 
where
ENR is the excess noise ratio of the noise source;
P and P in W are the measured noise power under the hot and cold state of the noise
N1 N2
source, respectively.
P and P in W are the measured noise powers under the hot and cold state of the noise
N3 N4
source, respectively, in the case of directly connecting point B to C in
figure 46.
The temperature of the measurement is 290 K.
4.10.4 Circuit description and requirements
The circuit loss L from point A to B should be measured beforehand.
4.10.5 Precautions to be observed
The entire circuit shall be shielded and grounded to prevent undesired signals. For noise figure
measurement under the single-side-band (SSB) condition, careful attention shall be paid to the
image and other spurious responses which are generated by the mixer. These spurious
responses should be reduced so as to be negligible.

– 6 – 60747-4 amend. 2 © IEC:1999(E)

4.10.6 Measurement procedure
The frequency of the r.f. generator is adjusted to the specified condition.

In order to measure the noise contribution of the measurement system, connect point B to C in

figure 46 without the device being measured and set the input and output impedance matching

networks to 50 Ω.
The noise power P and P corresponding to the noise source hot and cold, respectively, are
N3 N4
measured.
The noise figure F in decibels is calculated by equation (3).
The device being measured is inserted as shown in figure 46.
The gate-source voltage V (near the gate-source cut-off voltage) is applied.
GS
The specified drain-source voltage V is applied.
DS
The drain current I is adjusted to the specified value by varying V .
DS GS
During the adjustment of the input and output matching networks, the noise power P and P
N1 N2
corresponding to the noise source hot and cold, respectively, are measured.
The noise figure F in decibels is calculated by equation (2).
The associated gain G in decibels is calculated by equation (4).
as
The noise figure F in decibels is calculated by equation (1).
The input impedance matching network is adjusted to the minimum value of F.
The output impedance matching network is adjusted to the maximum value of G .
as
Repeat the above two steps until no further reduction in noise figure F is possible.
4.10.7 Specified conditions
– Ambient or reference point temperature
– Drain source voltage
– Drain current
– Frequency
– Single-side band or double-side band.
Renumber subclauses 4.12 as 4.11 and 4.13 as 4.12 and add the following new subclause 4.13:
4.13 Minimum noise figure (F ), equivalent input noise resistance (R ) and
min n
source reflection factor for minimum noise figure (r )
GFmin
4.13.1 Purpose
To measure the minimum noise figure, equivalent input noise resistance and source reflection
factor for the minimum noise figure of a microwave field-effect transistor under specified
conditions.
4.13.2 Circuit diagram
See the circuit diagram in 4.10.2.

60747-4 Amend. 2 © IEC:1999(E) – 7 –

4.13.3 Principle of measurements

See the principle of measurements in 4.10.3.

The noise figure dependence on the source admittance can be expressed as:

R
n 2 2
F = F + { (G − G ) + (B − B ) } (1)
min s 0 s 0
G
s
where
F is the noise figure
F is the minimum noise figure
min
R is the equivalent input noise resistance
n
G is the source conductance
s
B is the source susceptance
s
G is the source conductance for F
0 min
B is the source susceptance for F
0 min
To determine the four parameters, F , R , G and B , four dimensional simultaneous
min n 0 0
equations should be solved.
From equation (1)
2 2
R Y R Y
 B 
n 0 n s
s
F = F + − 2 R G + − 2 R B   (2)
min n 0 n 0
 
G G G
s s s
 
where
Y = G + jB (3)
0 0 0
Y = G + jB (4)
s s s
In equation (2), X , X , X and X are defined as
1 2 3 4
X = F – 2 R G
1 min n 0
X = R Y
2 n 0
X = R (5)
3 n
X = R B
4 n 0
Then, equation (2) leads to the following equations for n different Y
s
Y
 B 
1 s(1)
s(1)
 
F = X + X + X − 2 X
(1) 1 2 3 4
 
G G G
s(1) s(1) s(1)
 
(6)
•
•
•
Y
 B 
1 s(n)
s(n)
 
F = X + X + X − 2 X
(n) 1 2 3 4
 
G G G
s(n) s(n) s(n)
 
– 8 – 60747-4 amend. 2 © IEC:1999(E)

Substituting X , X , X and X obtained from equation (6) into equation (5), the four parameters
1 2 3 4
are determined as follows:
= + − (7)
F X 2 X X X
min 1 2 3 4
R = X (8)
n 3
G = X / X − (X / X ) (9)
0 2 3 4 3
B = X / X (10)
0 4 3
Γ , source reflection factor for F , is determined from the above G and B .
Fmin min 0 0
4.13.4 Circuit description and requirements
See the circuit description and requirements in 4.10.4.
4.13.5 Precautions to be observed
See the precaution to be observed in 4.10.5.
4.13.6 Measurement procedure
The frequency of the r.f. generator is adjusted to the specified condition.
The device being measured is inserted as shown in figure 46.
The gate-source voltage V (near gate-source cut-off voltage) is applied.
GS
The specified drain-source voltage V is applied.
DS
The drain current I is adjusted to the specified value by varying V .
DS GS
The input impedance matching network is adjusted so that the source admittance becomes
(G , B ).
s(1) s(1)
The output impedance matching network is adjusted so that the maximum power gain is
achieved.
The noise figure F is measured in accordance with the procedure described in 4.10.6.
(1)
Repeating the above procedure n times, F are determined for the n source admittance
(1)–(n)
(G , B ).
s(1)–(n) s(1)–(n)
The noise parameters: F , R and Γ are determined from the equations (6) to (10).
min n Fmin
4.13.7 Specified conditions
– Ambient or reference point temperature
– Drain source voltage
– Drain current
– Frequency
– Single-side band or double-side band.

60747-4 Amend. 2 © IEC:1999(E) – 9 –

Page 155
Add the following new chapter and renumber chapter VIII as chapter IX:

CHAPTER VIII – INTEGRATED CIRCUIT MICROWAVE AMPLIFIERS

1 Terminology
1.1 Linear (power) gain G
lin
The power gain in the linear region of the power transfer curve P (dBm) = f(P ).
o i
P P
NOTE – In this region, Δ (dBm) = Δ (dBm).
o i
1.2 Linear (power) gain flatness ΔG
lin
The power gain flatness when the operating point lies in the linear region of the power transfer
curve.
1.3 Power gain G , G
p
The ratio of the output power to the input power.
NOTE – Usually the power gain is expressed in decibels.
1.4 (Power) gain flatness ΔG
p
The difference between the maximum and minimum power gain for a specified input power in a
specified frequency range.
1.5 (Maximum available) gain reduction, ΔG
red
The difference in decibels between the maximum and minimum power gains that can be provided
by the gain control.
1.6 Output power limiting
1.6.1 Output power limiting range
The range in which, for rising input power, the output power is limiting.
NOTE – For specification purposes, the limits of this range are specified by specified lower and upper limit values
for the input power.
1.6.2 Limiting output power P
o(ltg)
The output power in the range where it is limiting.
1.6.3 Limiting output power flatness ΔP
o(ltg)
The difference between the maximum and minimum output power in the output power limiting
range:
ΔP = P – P
o(ltg) o(ltg,max) o(ltg,min)
– 10 – 60747-4 amend. 2 © IEC:1999(E)

1.7 Intermodulation distortion P/P
n i
The ratio of
the output power of the nth order component to

the output power of the fundamental component,

at a specified input power.
1.8 Power at the intercept point (for intermodulation products) P
n(IP)
The output power at intersection between the extrapolated output powers of the fundamental

component and the nth order intermodulation components, when the extrapolation is carried

out in a diagram showing the output power of the components (in decibels) as a function of the
input power (in decibels).
1.9 Magnitude of the input reflection coefficient (input return loss) s 
See 5.2.1 of IEC 60747-7, Chapter II.
1.10 Magnitude of the output reflection coefficient (output return loss) s 
See 5.2.2 of IEC 60747-7, Chapter II.
1.11 Magnitude of the reverse transmission coefficient (isolation) s 
See 5.2.4 of IEC 60747-7, Chapter II.
1.12 Conversion coefficient of amplitude modulation to phase modulation α
(AM-PM)
The quotient of
the phase deviation of the output-signal (in degrees) by
the change in input power (in decibels) producing it.
1.13 Group delay time t
d(grp)
The ratio of the change, with angular frequency, of the phase shift through the amplifier.
NOTE – Usually group delay time is very close in value to input-to-output delay time.

60747-4 Amend. 2 © IEC:1999(E) – 11 –

2 Essential ratings and characteristics for integrated circuit

microwave amplifiers
2.1 General
2.1.1 Circuit identification and types

2.1.1.1 Designation and types
Indication of type (device name), category of circuit and technology applied should be given.

Microwave amplifiers are divided into four categories:
Type A: Low-noise type.
Type B: Auto-gain control type.
Type C: Limiting type.
Type D
...