IEC 60747-4:2007

Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors

Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second edition cancels and replaces the first edition, published in 1991, its amendments 1, 2 and 3 (1993, 1999 and 2001, respectively), and constitutes a technical revision.

Dispositifs à semiconducteurs - Dispositifs discrets - Partie 4: Diodes et transistors hyperfréquences

Donne les exigences pour les catégories suivantes de dispositifs discrets: diodes à capacité variable et diodes à retour rapide, diodes mélangeuses et diodes détectrices, diodes à avalanche, diodes à effet gunn, transistors bipolaires et transistors à effet de champ. Cette deuxième édition annule et remplace la première édition, publiée en 1991, et ses amendements 1, 2 et 3 (1993, 1999 et 2001, respectivement) dont elle constitue une révision technique.

General Information

• Status: Published
• Publication Date: 22-Aug-2007
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.10 - Diodes
• ICS: 31.080.30 - Transistors
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 2 - TC 47/SC 47E/WG 2
• Current Stage: PPUB - Publication issued
• Start Date: 15-Oct-2007
• Completion Date: 23-Aug-2007

Relations

• Amended By: IEC 60747-4:2007/AMD1:2017 - Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
• Effective Date: 05-Sep-2023
• Revises: IEC 60747-4:1991/AMD2:1999 - Amendment 2 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
• Effective Date: 05-Sep-2023
• Revises: IEC 60747-4:1991 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 60747-4
Edition 2.0 2007-08
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 4: Microwave diodes and transistors

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 4: Diodes et transistors hyperfréquences
All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by
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IEC 60747-4
Edition 2.0 2007-08
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 4: Microwave diodes and transistors

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 4: Diodes et transistors hyperfréquences

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
XF
CODE PRIX
ICS 31.080.10 / 31.080.30  ISBN 2-8318-9262-7

– 2 – 60747-4 © IEC:2007
CONTENTS
FOREWORD.6

1 Scope.8
2 Normative references .8
3 Variable capacitance, snap-off diodes and fast-switching schottky diodes .8
3.1 Variable capacitance diodes.8
3.1.1 General .8
3.1.2 Terminology and letter symbols .9
3.1.3 Essential ratings and characteristics.9
3.1.4 Measuring methods .12
3.2 Snap-off diodes, Schottky diodes .39
3.2.1 General .39
3.2.2 Terminology and letter symbols .39
3.2.3 Essential ratings and characteristics.39
3.2.4 Measuring methods .41
4 Mixer diodes and detector diodes .48
4.1 Mixer diodes used in radar applications.48
4.1.1 General .48
4.1.2 Terminology and letter symbols .48
4.1.3 Essential ratings and characteristics.48
4.1.4 Measuring methods .50
4.2 Mixer diodes used in communication applications.69
4.2.1 General .69
4.2.2 Terminology and letter symbols .69
4.2.3 Essential ratings and characteristics.69
4.2.4 Measuring methods .71
4.3 Detector diodes .71
5 Impatt diodes.71
5.1 Impatt diodes amplifiers .71
5.1.1 General .71
5.1.2 Terms and definitions .71
5.1.3 Essential ratings and characteristics.74
5.2 Impatt diodes oscillators.77
6 Gunn diodes .77
6.1 General .77
6.2 Terms and definitions .78
6.3 Essential ratings and characteristics .78
6.4 Measuring methods .78
6.4.1 Pulse breakdown voltage.78
6.4.2 Threshold voltage.79
6.4.3 Resistance .80
7 Bipolar transistors .81
7.1 General .81
7.2 Terms and definitions .81
7.3 Essential ratings and characteristics .84

60747-4 © IEC:2007 – 3 –
7.3.1 General .84
7.3.2 Limiting values (absolute maximum rating system) .84
7.4 Measuring methods .87
7.4.1 General .87
7.4.2 DC characteristics .89
7.4.3 RF characteristics.89
7.5 Verifying methods .103
7.5.1 Load mismatch tolerance (Ψ ) .103
L
7.5.2 Source mismatch tolerance (Ψ ).107
S
7.5.3 Load mismatch ruggedness (Ψ ) .111
R
8 Field-effect transistors.112
8.1 General .112
8.2 Terms and definitions .112
8.3 Essential ratings and characteristics .115
8.3.1 General .115
8.3.2 Limiting values (absolute maximum rating system) . 116
8.4 Measuring methods .117
8.4.1 General .117
8.4.2 DC characteristics .118
8.4.3 RF characteristics.124
8.5 Verifying methods .135
8.5.1 Load mismatch tolerance (Ψ ).135
L
8.5.2 Source mismatch tolerance (Ψ ) .135
S
8.5.3 Load mismatch ruggedness (Ψ ).135
R
9 Assessment and reliability – specific requirements .135
9.1 Electrical test conditions.135
9.2 Failure criteria and failure-defining characteristics for acceptance tests . 135
9.3 Failure criteria and failure-defining characteristics for reliability tests . 135
9.4 Procedure in case of a testing error.135

Figure 1 – Equivalent circuit.12
Figure 2 – Circuit for the measurement of reverse current I .12
R
Figure 3 – Circuit for the measurement of forward voltage V .13
F
Figure 4 – Circuit for the measurement of capacitance C .14
tot
Figure 5 – Circuit for the measurement of effective quality factor .15
Figure 6 – Circuit for the measurement of series inductance .17
Figure 7 – Circuit for the measurement of thermal resistance R .18
th
Figure 8 – Circuit for the measurement of transient thermal impedance Z .19
th
Figure 9 – Waveguide mounting.21
Figure 10 – Equivalent circuit of mounted diode.
...

IEC 60747-4 ®
Edition 2.1 2017-01
CONSOLIDATED VERSION
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Discrete devices –
Part 4: Microwave diodes and transistors

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 4: Diodes et transistors hyperfréquences

All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form
or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from
either IEC or IEC's member National Committee in the country of the requester. If you have any questions about IEC
copyright or have an enquiry about obtaining additional rights to this publication, please contact the address below or
your local IEC member National Committee for further information.

Droits de reproduction réservés. Sauf indication contraire, aucune partie de cette publication ne peut être reproduite
ni utilisée sous quelque forme que ce soit et par aucun procédé, électronique ou mécanique, y compris la photocopie
et les microfilms, sans l'accord écrit de l'IEC ou du Comité national de l'IEC du pays du demandeur. Si vous avez des
questions sur le copyright de l'IEC ou si vous désirez obtenir des droits supplémentaires sur cette publication, utilisez
les coordonnées ci-après ou contactez le Comité national de l'IEC de votre pays de résidence.

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3, rue de Varembé Fax: [phone]
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Switzerland www.iec.ch
About the IEC
The International Electrotechnical Commission (IEC) is the leading global organization that prepares and publishes
International Standards for all electrical, electronic and related technologies.

About IEC publications
The technical content of IEC publications is kept under constant review by the IEC. Please make sure that you have the
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IEC 60747-4 ®
Edition 2.1 2017-01
CONSOLIDATED VERSION
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Discrete devices –

Part 4: Microwave diodes and transistors

Dispositifs à semiconducteurs – Dispositifs discrets –

Partie 4: Diodes et transistors hyperfréquences

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.10; 31.080.30 ISBN 978-2-8322-3919-3

IEC 60747-4 ®
Edition 2.1 2017-01
CONSOLIDATED VERSION
REDLINE VERSION
VERSION REDLINE
colour
inside
Semiconductor devices – Discrete devices –
Part 4: Microwave diodes and transistors

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 4: Diodes et transistors hyperfréquences

– 2 – IEC 60747-4:2007+AMD1:2017 CSV
 IEC 2017
CONTENTS
FOREWORD . 6
1 Scope . 8
2 Normative references . 8
3 Variable capacitance, snap-off diodes and fast-switching schottky diodes . 8
3.1 Variable capacitance diodes . 8
3.1.1 General . 8
3.1.2 Terminology and letter symbols . 9
3.1.3 Essential ratings and characteristics . 9
3.1.4 Measuring methods . 12
3.2 Snap-off diodes, Schottky diodes . 39
3.2.1 General . 39
3.2.2 Terminology and letter symbols . 39
3.2.3 Essential ratings and characteristics . 39
3.2.4 Measuring methods . 41
4 Mixer diodes and detector diodes . 48
4.1 Mixer diodes used in radar applications . 48
4.1.1 General . 48
4.1.2 Terminology and letter symbols . 48
4.1.3 Essential ratings and characteristics . 48
4.1.4 Measuring methods . 50
4.2 Mixer diodes used in communication applications . 69
4.2.1 General . 69
4.2.2 Terminology and letter symbols . 69
4.2.3 Essential ratings and characteristics . 69
4.2.4 Measuring methods . 71
4.3 Detector diodes . 71
5 Impatt diodes. 71
5.1 Impatt diodes amplifiers . 71
5.1.1 General . 71
5.1.2 Terms and definitions . 71
5.1.3 Essential ratings and characteristics . 74
5.2 Impatt diodes oscillators . 77
6 Gunn diodes . 77
6.1 General . 77
6.2 Terms and definitions . 78
6.3 Essential ratings and characteristics . 78
6.4 Measuring methods . 78
6.4.1 Pulse breakdown voltage V . 78
(BR)
6.4.2 Threshold voltage . 79
6.4.3 Resistance . 80
7 Bipolar transistors . 81
7.1 General . 81
7.2 Terms and definitions . 81
7.3 Essential ratings and characteristics . 84
7.3.1 General . 84
7.3.2 Limiting values (absolute maximum rating system) . 84

 IEC 2017
7.4 Measuring methods . 87
7.4.1 General . 87
7.4.2 DC characteristics . 89
7.4.3 RF characteristics . 89
7.5 Verifying methods . 103
7.5.1 Load mismatch tolerance (Ψ ) . 103
L
7.5.2 Source mismatch tolerance (Ψ ) . 106
S
7.5.3 Load mismatch ruggedness (Ψ ). 110
R
8 Field-effect transistors . 111
8.1 General . 111
8.2 Terms and definitions . 111
8.3 Essential ratings and characteristics . 114
8.3.1 General . 114
8.3.2 Limiting values (absolute maximum rating system) . 115
8.4 Measuring methods . 116
8.4.1 General . 116
8.4.2 DC characteristics . 117
8.4.3 RF characteristics . 123
8.5 Verifying methods .
...