IEC 60747-4:2007

Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors

Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second edition cancels and replaces the first edition, published in 1991, its amendments 1, 2 and 3 (1993, 1999 and 2001, respectively), and constitutes a technical revision.

Dispositifs à semiconducteurs - Dispositifs discrets - Partie 4: Diodes et transistors hyperfréquences

Donne les exigences pour les catégories suivantes de dispositifs discrets: diodes à capacité variable et diodes à retour rapide, diodes mélangeuses et diodes détectrices, diodes à avalanche, diodes à effet gunn, transistors bipolaires et transistors à effet de champ. Cette deuxième édition annule et remplace la première édition, publiée en 1991, et ses amendements 1, 2 et 3 (1993, 1999 et 2001, respectivement) dont elle constitue une révision technique.

General Information

• Status: Published
• Publication Date: 22-Aug-2007
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.10 - Diodes
• ICS: 31.080.30 - Transistors
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 2 - TC 47/SC 47E/WG 2
• Current Stage: PPUB - Publication issued
• Start Date: 15-Oct-2007
• Completion Date: 23-Aug-2007

Relations

• Amended By: IEC 60747-4:2007/AMD1:2017 - Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
• Effective Date: 05-Sep-2023
• Revises: IEC 60747-4:1991/AMD2:1999 - Amendment 2 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
• Effective Date: 05-Sep-2023
• Revises: IEC 60747-4:1991 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 60747-4 ®
Edition 2.1 2017-01
CONSOLIDATED VERSION
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Discrete devices –
Part 4: Microwave diodes and transistors

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 4: Diodes et transistors hyperfréquences

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IEC 60747-4 ®
Edition 2.1 2017-01
CONSOLIDATED VERSION
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Discrete devices –

Part 4: Microwave diodes and transistors

Dispositifs à semiconducteurs – Dispositifs discrets –

Partie 4: Diodes et transistors hyperfréquences

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.10; 31.080.30 ISBN 978-2-8322-3919-3

IEC 60747-4 ®
Edition 2.1 2017-01
CONSOLIDATED VERSION
REDLINE VERSION
VERSION REDLINE
colour
inside
Semiconductor devices – Discrete devices –
Part 4: Microwave diodes and transistors

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 4: Diodes et transistors hyperfréquences

– 2 – IEC 60747-4:2007+AMD1:2017 CSV
 IEC 2017
CONTENTS
FOREWORD . 6
1 Scope . 8
2 Normative references . 8
3 Variable capacitance, snap-off diodes and fast-switching schottky diodes . 8
3.1 Variable capacitance diodes . 8
3.1.1 General . 8
3.1.2 Terminology and letter symbols . 9
3.1.3 Essential ratings and characteristics . 9
3.1.4 Measuring methods . 12
3.2 Snap-off diodes, Schottky diodes . 39
3.2.1 General . 39
3.2.2 Terminology and letter symbols . 39
3.2.3 Essential ratings and characteristics . 39
3.2.4 Measuring methods . 41
4 Mixer diodes and detector diodes . 48
4.1 Mixer diodes used in radar applications . 48
4.1.1 General . 48
4.1.2 Terminology and letter symbols . 48
4.1.3 Essential ratings and characteristics . 48
4.1.4 Measuring methods . 50
4.2 Mixer diodes used in communication applications . 69
4.2.1 General . 69
4.2.2 Terminology and letter symbols . 69
4.2.3 Essential ratings and characteristics . 69
4.2.4 Measuring methods . 71
4.3 Detector diodes . 71
5 Impatt diodes. 71
5.1 Impatt diodes amplifiers . 71
5.1.1 General . 71
5.1.2 Terms and definitions . 71
5.1.3 Essential ratings and characteristics . 74
5.2 Impatt diodes oscillators . 77
6 Gunn diodes . 77
6.1 General . 77
6.2 Terms and definitions . 78
6.3 Essential ratings and characteristics . 78
6.4 Measuring methods . 78
6.4.1 Pulse breakdown voltage V . 78
(BR)
6.4.2 Threshold voltage . 79
6.4.3 Resistance . 80
7 Bipolar transistors . 81
7.1 General . 81
7.2 Terms and definitions . 81
7.3 Essential ratings and characteristics . 84
7.3.1 General . 84
7.3.2 Limiting values (absolute maximum rating system) . 84

 IEC 2017
7.4 Measuring methods . 87
7.4.1 General . 87
7.4.2 DC characteristics . 89
7.4.3 RF characteristics . 89
7.5 Verifying methods . 103
7.5.1 Load mismatch tolerance (Ψ ) . 103
L
7.5.2 Source mismatch tolerance (Ψ ) . 106
S
7.5.3 Load mismatch ruggedness (Ψ ). 110
R
8 Field-effect transistors . 111
8.1 General . 111
8.2 Terms and definitions . 111
8.3 Essential ratings and characteristics . 114
8.3.1 General . 114
8.3.2 Limiting values (absolute maximum rating system) . 115
8.4 Measuring methods . 116
8.4.1 General . 116
8.4.2 DC characteristics . 117
8.4.3 RF characteristics . 123
8.5 Verifying methods . 134
8.5.1 Load mismatch tolerance (Ψ ) . 134
L
8.5.2 Source mismatch tolerance (Ψ ) . 134
S
8.5.3 Load mismatch ruggedness (Ψ ). 134
R
9 Assessment and reliability – specific requirements . 134
9.1 Electrical test conditions . 134
9.2 Failure criteria and failure-defining characteristics for acceptance tests . 134
9.3 Failure criteria and failure-defining characteristics for reliability tests . 134
9.4 Procedure in case of a testing error . 134

Figure 1 – Equivalent circuit. 12
Figure 2 – Circuit for the measurement of reverse current I . 12
R
Figure 3 – Circuit for the measurement of forward voltage V . 13
F
Figure 4 – Circuit for the measurement of capacitance C . 14
tot
Figure 5 – Circuit for the measurement of effective quality factor . 15
Figure 6 – Circuit for the measurement of series inductance . 17
Figure 7 – Circuit for the measurement of thermal resistance R . 18
th
Figure 8 – Circuit for the measurement of transient thermal impedance Z . 19
th
Figure 9 – Waveguide mounting . 21
Figure 10 – Equivalent circuit of mounted diode . 21
Figure 11 – Block diagram of transmission loss measurement circuit . 22
Figure 12 – Curve indicating transmitted power versus frequency . 24
Figure 13 – Example of cavity . 26
Figure 14 – Block diagram for the measurement of effective Q in cavity method . 28

– 4 – IEC 60747-4:2007+AMD1:2017 CSV
 IEC 2017
Figure 15 – Block diagram of transformed impedance measurement circuit . 35
Figure 16 – Example of plot of diode impedance as a function of bias . 36
Figure 17 – Modified Smith Chart indicating constant Q and constant R circles . 38
Figure 18 – Transition time t . 39
t
Figure 19 – Circuit for the measurement of transition time (t ) . 41
t
Figure 20 – The time interval (t ) . 43
t1
Figure 21 – Circuit for the measurement of reverse recovery time . 43
Figure 22 – The reverse recovery time t . 44
rr
Figure 23 – Circuit for the measurement of the excess carrier effective lifetime . 45
Figure 24 – Circuit for the measurement of the excess carrier effective lifetime . 46
Figure 25 – the ratio of i to i . 47
pr pf
Figure 26 – Circuit for the measurement of forward current (I ) . 50
F
Figure 27 – Circuit for the measurement of rectified current (I ) . 51
Figure 28 – Circuit for the measurement of intermediate frequency impedance (Z ) in
if
the method 1 . 52
Figure 29 – Circuit for the measurement of intermediate frequency impedance (Z ) in
if
the method 2 . 53
Figure 30 – Circuit for the measurement of voltage standing wave ratio . 55
Figure 31 – Circuit for the measurement of overall noise factor . 57
Figure 32 – Circuit for the measurement of output noise ratio . 61
Figure 33 – Circuit for the measurement of conversion loss in dc incremental method . 63
Figure 34 – Circuit for the measurement of conversion loss in amplitude modulation
method . 64
Figure 35 – Block diagram of burnout energy measurement circuit. 65
Figure 36 – Circuit for the measurement of pulse breakdown voltage . 78
Figure 37 – Circuit for the measurement of threshold voltage . 79
Figure 38 – Circuit for the measurement of resistance in voltmeter-ammeter method . 80
Figure 39 – Circuit for the measurement of resistance in alternative method . 81
Figure 40 – Circuit for the measurement of scattering parameters . 91
Figure 41 – Incident and reflected waves in a two-port network . 92
Figure 42 – Circuit for the measurements of two-tone intermodulation distortion . 98
Figure 43 – Example of third order intermodulation products indicated by the spectrum
analyser . 100
Figure 44 – Typical intermodulation products output power characteristic . 102
Figure 45 – Circuit for the verification of load mismatch tolerance in the method 1 . 103
Figure 46 – Circuit for the verification of load mismatch tolerance in the method 2 . 105
Figure 47 – Circuit for the verification of source mismatch tolerance in the method 1 . 107

 IEC 2017
Figure 48 – Circuit for the verification of source mismatch tolerance in the method 2 . 109
Figure 49 – Circuit for the verification of load mismatch ruggedness . 110
Figure 50 – Circuit for the measurements of gate-source breakdown voltage, V . 118
(BR)GSO
Figure 51 – Circuit for the measurements of gate-drain breakdown voltage, V . 118
(BR)GDO
Figure 52 – Circuit for the measurement of thermal resistance, channel-to-case . 119
Figure 53 – Timing chart of DC pulse to be supplied to the device being measured . 121
Figure 54 – Calibration curve V = f(T ) for fixed I , evaluation of α . 122
GSF ch G(ref)
Figure 55 – V in function of delay time τ . 123
GSF2 4
Figure 56 – Circuit for the measurement of output power at specified input power . 124
Figure 57 – Circuit for the measurements of the noise figure and associated gain. 129

Table 1 – Electrical limiting values . 84
Table 2 – DC characteristics . 85
Table 3 – RF characteristics . 86
Table 4 – Replacing rule for terms . 87
Table 5 – Replacing rule for symbols in the case of constant base current . 88
Table 6 – Replacing rule for symbols in the case of constant base voltage . 88
Table 7 – Electrical limiting values . 115
Table 8 – DC characteristics . 115
Table 9 – RF characteristics . 116
Table 10 – Replacing rules for terms. 117
Table 11 – Replacing rules for symbols. 117
Table 12 – Operating conditions and Test circuits . 135
Table 13 – Failure criteria and measurement conditions . 137

– 6 – IEC 60747-4:2007+AMD1:2017 CSV
 IEC 2017
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
DISCRETE DEVICES –
Part 4: Microwave diodes and transistors
FOREWORD
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This consolidated version of the official IEC Standard and its amendment has been prepared
for user convenience.
IEC 60747-4 edition 2.1 contains the second edition (2007-08) [documents 47E/330/FDIS and
47E/339/RVD] and its amendment 1 (2017-01) [documents 47E/499/CDV and 47E/517/RVC].
In this Redline version, a vertical line in the margin shows where the technical
content is modified by amendment 1. Additions are in green text, deletions are in
strikethrough red text. A separate Final version with all changes accepted is
available in this publication.

 IEC 2017
International Standard IEC 60747-4 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
This second edition constitutes a technical revision.
The major technical changes with regard to the previous edition are as follows:
a) the clause of bipolar transistors has been added;
b) the clause of field-effect transistors has been amended.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
The list of all parts of the IEC 60747 series, under the general title Semiconductor devices –
Discrete devices, can be found on the IEC website.
The committee has decided that the contents of the base publication and its amendment will
remain unchanged until the stability date indicated on the IEC web site under
"http://webstore.iec.ch" in the data related to the specific publication. At this date, the
publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct
understanding of its contents. Users should therefore print this document using a
colour printer.
– 8 – IEC 60747-4:2007+AMD1:2017 CSV
 IEC 2017
SEMICONDUCTOR DEVICES –
DISCRETE DEVICES –
Part 4: Microwave diodes and transistors

1 Scope
This part of IEC 60747 gives requirements for the following categories of discrete devices:
– variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic
multiplication, switching, limiting, phased shift, parametric amplification);
– mixer diodes and detector diodes;
– avalanche diodes (for direct harmonic generation, amplification);
– gunn diodes (for direct harmonic generation);
– bipolar transistors (for amplification, oscillation);
– field-effect transistors (for amplification, oscillation).
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60050-702:1992, International Electrotechnical Vocabulary – Chapter 702: Oscillations,
signals and related devices (available at: )
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-1/AMD 1:2010
IEC 60747-7:2000, Semiconductor devices – Part 7: Bipolar transistors
IEC 60747-8:2000, Semiconductor devices – Part 8: Field-effect transistors
IEC 60747-16-1:2001, Semiconductor devices – Part 16-1: Microwave integrated circuits –
Amplifiers
Amendment 1(2007)
3 Variable capacitance, snap-off diodes and fast-switching schottky diodes
3.1 Variable capacitance diodes
3.1.1 General
The provisions of this part deal with diodes (excluding snap-off diodes) in which the variable
capacitance effect is used; they cover four applications: tuning, harmonic multiplication,
switching (including limiting), parametric amplification.
The devices for these applications are defined as follows:
Diodes for tuning
Diodes which are used to vary the frequency of a tuned circuit. These diodes are usually
characterized a frequency of resonance much higher than the frequency of use and have a
known capacitance/voltage relationship.

 IEC 2017
Diodes for harmonic multiplication
These diodes must have a non-linear capacitance/voltage relationship at the frequency of
operation and a high ratio of cut-off frequency to operating frequency.
Diodes for switching (including limiting)
These diodes exhibit a fast transition from a high impedance state to a low impedance state
and vice versa and can be used to modulate or control the power level in microwave systems.
Diodes for parametric amplification
These diodes are intended to handle small amplitude signals and are most often used in low-
noise amplifiers.
3.1.2 Terminology and letter symbols
See 3.1.3.3.
3.1.3 Essential ratings and characteristics
3.1.3.1 General
3.1.3.1.1 Rating conditions
Variable capacitance diodes may be specified either as ambient rated or case rated devices
or, where appropriate, as both.
The ratings listed in 3.1.3.2 should be stated at the following temperatures:
– ambient-rated devices:
at an ambient temperature of 25 °C and at one higher temperature.
– case-rated devices:
at a reference point temperature of 25 °C and at another reference point temperature.
3.1.3.1.2 Application categories
The essential ratings and characteristics to be stated for each category of diode are marked
with a + sign in the following table:

– 10 – IEC 60747-4:2007+AMD1:2017 CSV
 IEC 2017
– column 1: tuning applications;
– column 2: harmonic multiplication applications;
– column 3: switching (including limiting) applications;
– column 4: parametric amplification applications.

3.1.3.2 Ratings (limiting values) Categories
The following ratings should be stated: 1 2 3 4
3.1.3.2.1 Temperatures
Range of operating temperatures + + + +
Range of storage temperatures + + + +
3.1.3.2.2 Voltages and currents
Maximum peak reverse voltage + + + +
Maximum mean forward current, where appropriate  + + +
Maximum peak forward current, where appropriate + + +
3.1.3.2.3 Power dissipation
Maximum dissipation, under stated conditions, over the operating + + + +
temperature range
3.1.3.3 Electrical characteristics
Unless otherwise specified, the following characteristics should be given
at 25 °C (see Figure 1)
3.1.3.3.1 Stray capacitance (C )
p
Typical value under specified conditions + + + +
3.1.3.3.2 Series inductance (L )
s
Typical value and, where appropriate, maximum value + + + +
under specified conditions
3.1.3.3.3 Terminal capacitance (C )

tot
a) Minimum and maximum values, at a specified bias voltage + + + +
and at a specified frequency (note 2)
b) Typical curve showing the relationship between terminal capacitance + + + +
and bias voltage
3.1.3.3.4 Junction capacitance (C )
j
Minimum and maximum values at a specified bias voltage (notes 2 and 3). + + + +
When the order of magnitude of C is the same as that of the terminal
p
, a typical value should be given for C instead of minimum
capacitance C
tot j
and maximum values
3.1.3.3.5 Effective quality factor (Q)

Minimum values at two or more specified frequencies under specified +
bias conditions (note 4)
 IEC 2017
Categories
1 2 3 4
3.1.3.3.6 Cut-off frequency
Minimum value under specified conditions (notes 4 and 5) + + +
3.1.3.3.7 Series resistance (r )
s
Maximum and/or typical values under specified conditions (note 4) + + + +
3.1.3.3.8 Reverse current
Maximum value at a specified reverse voltage + + + +
3.1.3.3.9 Thermal resistance
Maximum value between junction and ambient, or between the junction + + +
and a specified reference point
3.1.3.3.10 Switching time
Typical value under specified conditions +
3.1.3.3.11 Stored charge or minority carrier life time
Typical value, for either stored charge under specified conditions
including bias, or minority carrier life time under specified conditions + +
3.1.3.3.12 Transition time
Typical value, under specified conditions, together with a specified +
measurement circuit (note 1)
NOTE 1 See definition in 3.2.2.
NOTE 2 For categories 1, 2 and 3, the specified bias voltage should be –6 V and for category 4, the specified
bias voltage should be 0 V.
NOTE 3 The relationship between the junction capacitance and bias voltage should be represented either by a
typical curve or by a mathematical form. The mathematical form should be as follows:
γ
C = K (V + φ)
j
where V is the magnitude of the applied reverse voltage and K, φ and γ are three constants. The manufacturer
should specify the typical values for K, φ and γ.
NOTE 4 If the Q value and the series resistance are not specified for category 1, then the cut-off frequency must
be specified.
NOTE 5 The cut-off frequency f is defined as:
c
f =
c
2π r C
s j
where r is the series resistance and C is the capacitance of the junction measured at a specified bias point r is
s j s
determined by the equivalent circuit shown in Figure 1 below; its value depends on the measuring method used
and on the bias voltage.
– 12 – IEC 60747-4:2007+AMD1:2017 CSV
 IEC 2017
IEC  1108/01
Key
C junction capacitance C stray capacitance
j p
r series resistance L series inductance
s s
r low frequency resistance of the junction
j
In general, r is sufficiently high to be neglected.
j
Figure 1 – Equivalent circuit
3.1.3.4 Application data
For harmonic multiplication applications, the efficiency should be stated.
3.1.4 Measuring methods
3.1.4.1 Reverse current I
R
a) Purpose
To measure the reverse current of a diode under specified reverse voltage.
b) Circuit diagram
IEC  1109/01
Key
D diode being measured
Figure 2 – Circuit for the measurement of reverse current I
R
 IEC 2017
c) Circuit description and requirements
R is a calibrated resistor (pulse measurement only).
R is a protective resistor.
If a pulse measurement is required, the variable voltage generator is replaced by a voltage
pulse generator, the voltmeter is replaced by a peak-reading instrument and the ammeter
is replaced by a peak-reading voltmeter across the calibrated resistor R .
d) Measurement procedure
The temperature is set to the specified value.
The variable voltage generator is adjusted to obtain the specified value of reverse voltage
V across the diode.
R
The reverse current I is read from the ammeter A.
R
e) Specified conditions
– Ambient, case or reference-point temperature (t , t , t ).
amb case ref
– Reverse voltage (V ).
R
– Pulse width and duty cycle, where applicable.
3.1.4.2 Forward voltage V
F
a) Purpose
To measure the forward voltage across a signal or switching diode under specified
conditions.
b) Circuit diagram
IEC  1110/01
Key
D diode being measured
Figure 3 – Circuit for the measurement of forward voltage V
F
c) Circuit description and requirements
R is a calibrated resistor (pulse measurement only).
R is a high value resistor.
If a pulse measurement is required, the variable voltage generator is replaced by a voltage
pulse generator, the voltmeter is replaced by a peak-reading instrument and the ammeter
is replaced by a peak-reading voltmeter across the calibrated resistor R .
– 14 – IEC 60747-4:2007+AMD1:2017 CSV
 IEC 2017
d) Measurement procedure
The temperature is set to the specified value.
The variable voltage generator is adjusted to obtain the specified value of forward current I .
F
The forward voltage V is read from the voltmeter V.
F
e) Specified conditions
– Ambient or case temperature (t , t ).
amb case
– Forward current (I ).
F
– Pulse width and duty cycle, where applicable.
3.1.4.3 Capacitance C
tot
The measurement of total capacitance (C = C + C ) should be made at a sufficiently low
tot j p
frequency (below microwave frequencies) so that the effects of the lead inductance may be
neglected. Under these conditions, the measured value of terminal capacitance is
independent of frequency.
The total capacitance at a given bias condition is obtained by the method stated hereafter.
a) Purpose
To measure the total capacitance of a diode under specified conditions.
b) Circuit diagram
IEC  1111/01
Key
D diode being measured
Figure 4 – Circuit for the measurement of capacitance C
tot
c) Circuit description and requirements
The conductance of resistor R should be low compared with the admittance of the diode
being measured.
The capacitor C must be able to withstand the reverse bias voltage of the diode and
should present a short circuit at the frequency of measurement.
d) Precautions to be observed
The bridge shall be able to withstand the reverse bias voltage of the diode without
affecting the accuracy of the measurement. If the measured capacitance is very small, the
mounting conditions will affect the accuracy of the results and they should be specified.

 IEC 2017
e) Measurement procedure
The temperature is set to the specified value.
The voltage across the diode is adjusted to the specified value V . Then the voltmeter V is
R
taken out of the circuit and the capacitance of the diode being measured is determined
using the a.c. bridge by subtracting the value without the diode in its mounting from the
value with the diode in its mounting.
f) Specified conditions
Ambient or case temperature (t , t ).
amb case
– Reverse voltage (V ).
R
– Measurement frequency, if different from 1 MHz.
– Mounting conditions of the diode, if necessary.
NOTE The variation of total capacitance with bias voltage may be found by measurements as described
above, made at a number of bias points.
3.1.4.4 Effective quality factor Q
The effective quality factor Q of a variable capacitance diode can be measured using
a "Q-meter" or an impedance bridge (see Figure 5).
IEC  1112/01
Key
D diode being measured
V voltage source
Q Q-meter
Figure 5 – Circuit for the measurement of effective quality factor
Description
a) The voltage source should present a high impedance at the frequency of measurement
compared to that of the capacitor C; this is obtained by means of series resistor R.
b) C is a decoupling capacitor having a low impedance at the frequency of measurement.
c) L is an inductor chosen to resonate with the parallel circuit capacitor at the frequency of
measurement.
d) It is assumed that there is a low resistance path through the Q-meter between points A
and B.
– 16 – IEC 60747-4:2007+AMD1:2017 CSV
 IEC 2017
The basic circuit of such a meter consists of a signal generator of negligible output impedance
driving a high Q inductance in series with a high-quality variable capacitance. The factor Q of
this circuit can be measured at a given frequency by tuning the variable capacitance for
resonance.
Q is given by the ratio of the voltage across the capacitance to the voltage supplied by the
generator. In order to measure the factor Q of a variable capacitance diode, it shall be
connected in parallel with the variable capacitance in the Q-meter. DC isolating components
shall be used so that the desired bias voltage may be applied to the diode being measured,
but the biasing circuit must remain connected to the Q-meter throughout the measurement.
Four measurements are made: Q and C , the factor Q of the circuit and the magnitude of the
variable capacitance with the diode not in circuit; and Q and C , the factor Q of the circuit
2 2
and the value of the variable capacitance for resonance at the same frequency with the diode
connected to the circuit.
The factor Q of the diode is then calculated using the expression:
 Q Q  C − C 
1 2 1 2
   
Q 　=
   
Q −Q C
 1 2   1 
Two precautions are necessary:
1) The measurement shall be made at a frequency at which the reactance of the self-
inductance of the diode is negligible compared with the reactance of the capacitor.
2) The magnitude of the signal applied to the variable capacitance diode shall be kept
relatively small so that only a small excursion is made over the non-linear capacitance
characteristic. The result must be independent of the signal level.
NOTE
1 f
c
Q = =
2π f × C × r f
j s
Since C ≤ C for these diodes, C and C can be used interchangeably i
...

IEC 60747-4
Edition 2.0 2007-08
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 4: Microwave diodes and transistors

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 4: Diodes et transistors hyperfréquences
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IEC 60747-4
Edition 2.0 2007-08
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 4: Microwave diodes and transistors

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 4: Diodes et transistors hyperfréquences

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
XF
CODE PRIX
ICS 31.080.10 / 31.080.30  ISBN 2-8318-9262-7

– 2 – 60747-4 © IEC:2007
CONTENTS
FOREWORD.6

1 Scope.8
2 Normative references .8
3 Variable capacitance, snap-off diodes and fast-switching schottky diodes .8
3.1 Variable capacitance diodes.8
3.1.1 General .8
3.1.2 Terminology and letter symbols .9
3.1.3 Essential ratings and characteristics.9
3.1.4 Measuring methods .12
3.2 Snap-off diodes, Schottky diodes .39
3.2.1 General .39
3.2.2 Terminology and letter symbols .39
3.2.3 Essential ratings and characteristics.39
3.2.4 Measuring methods .41
4 Mixer diodes and detector diodes .48
4.1 Mixer diodes used in radar applications.48
4.1.1 General .48
4.1.2 Terminology and letter symbols .48
4.1.3 Essential ratings and characteristics.48
4.1.4 Measuring methods .50
4.2 Mixer diodes used in communication applications.69
4.2.1 General .69
4.2.2 Terminology and letter symbols .69
4.2.3 Essential ratings and characteristics.69
4.2.4 Measuring methods .71
4.3 Detector diodes .71
5 Impatt diodes.71
5.1 Impatt diodes amplifiers .71
5.1.1 General .71
5.1.2 Terms and definitions .71
5.1.3 Essential ratings and characteristics.74
5.2 Impatt diodes oscillators.77
6 Gunn diodes .77
6.1 General .77
6.2 Terms and definitions .78
6.3 Essential ratings and characteristics .78
6.4 Measuring methods .78
6.4.1 Pulse breakdown voltage.78
6.4.2 Threshold voltage.79
6.4.3 Resistance .80
7 Bipolar transistors .81
7.1 General .81
7.2 Terms and definitions .81
7.3 Essential ratings and characteristics .84

60747-4 © IEC:2007 – 3 –
7.3.1 General .84
7.3.2 Limiting values (absolute maximum rating system) .84
7.4 Measuring methods .87
7.4.1 General .87
7.4.2 DC characteristics .89
7.4.3 RF characteristics.89
7.5 Verifying methods .103
7.5.1 Load mismatch tolerance (Ψ ) .103
L
7.5.2 Source mismatch tolerance (Ψ ).107
S
7.5.3 Load mismatch ruggedness (Ψ ) .111
R
8 Field-effect transistors.112
8.1 General .112
8.2 Terms and definitions .112
8.3 Essential ratings and characteristics .115
8.3.1 General .115
8.3.2 Limiting values (absolute maximum rating system) . 116
8.4 Measuring methods .117
8.4.1 General .117
8.4.2 DC characteristics .118
8.4.3 RF characteristics.124
8.5 Verifying methods .135
8.5.1 Load mismatch tolerance (Ψ ).135
L
8.5.2 Source mismatch tolerance (Ψ ) .135
S
8.5.3 Load mismatch ruggedness (Ψ ).135
R
9 Assessment and reliability – specific requirements .135
9.1 Electrical test conditions.135
9.2 Failure criteria and failure-defining characteristics for acceptance tests . 135
9.3 Failure criteria and failure-defining characteristics for reliability tests . 135
9.4 Procedure in case of a testing error.135

Figure 1 – Equivalent circuit.12
Figure 2 – Circuit for the measurement of reverse current I .12
R
Figure 3 – Circuit for the measurement of forward voltage V .13
F
Figure 4 – Circuit for the measurement of capacitance C .14
tot
Figure 5 – Circuit for the measurement of effective quality factor .15
Figure 6 – Circuit for the measurement of series inductance .17
Figure 7 – Circuit for the measurement of thermal resistance R .18
th
Figure 8 – Circuit for the measurement of transient thermal impedance Z .19
th
Figure 9 – Waveguide mounting.21
Figure 10 – Equivalent circuit of mounted diode.21
Figure 11 – Block diagram of transmission loss measurement circuit .22
Figure 12 – Curve indicating transmitted power versus frequency .24
Figure 13 – Example of cavity.26
Figure 14 – Block diagram for the measurement of effective Q in cavity method .28

– 4 – 60747-4 © IEC:2007
Figure 15 – Block diagram of transformed impedance measurement circuit.35
Figure 16 – Example of plot of diode impedance as a function of bias.36
Figure 17 – Modified Smith Chart indicating constant Q and constant R circles.38
Figure 18 – Transition time t .39
t
Figure 19 – Circuit for the measurement of transition time (t ).41
t
Figure 20 – The time interval (t ) .43
t1
Figure 21 – Circuit for the measurement of reverse recovery time.43
Figure 22 – The reverse recovery time t .44
rr
Figure 23 – Circuit for the measurement of the excess carrier effective lifetime .45
Figure 24 – Circuit for the measurement of the excess carrier effective lifetime .46
Figure 25 – the ratio of i to i .47
pr pf
Figure 26 – Circuit for the measurement of forward current (I ).50
F
Figure 27 – Circuit for the measurement of rectified current (I ) .51
Figure 28 – Circuit for the measurement of intermediate frequency impedance (Z ) in
if
the method 1.52
Figure 29 – Circuit for the measurement of intermediate frequency impedance (Z ) in
if
the method 2.53
Figure 30 – Circuit for the measurement of voltage standing wave ratio.55
Figure 31 – Circuit for the measurement of overall noise factor.57
Figure 32 – Circuit for the measurement of output noise ratio .61
Figure 33 – Circuit for the measurement of conversion loss in dc incremental method .63
Figure 34 – Circuit for the measurement of conversion loss in amplitude modulation
method .64
Figure 35 – Block diagram of burnout energy measurement circuit.65
Figure 36 – Circuit for the measurement of pulse breakdown voltage.78
Figure 37 – Circuit for the measurement of threshold voltage.79
Figure 38 – Circuit for the measurement of resistance in voltmeter-ammeter method .80
Figure 39 – Circuit for the measurement of resistance in alternative method.81
Figure 40 – Circuit for the measurement of scattering parameters .91
Figure 41 – Incident and reflected waves in a two-port network .92
Figure 42 – Circuit for the measurements of two-tone intermodulation distortion .98
Figure 43 – Example of third order intermodulation products indicated by the spectrum
analyser.100
Figure 44 – Typical intermodulation products output power characteristic . 102
Figure 45 – Circuit for the verification of load mismatch tolerance in the method 1. 104
Figure 46 – Circuit for the verification of load mismatch tolerance in the method 2. 106
Figure 47 – Circuit for the verification of source mismatch tolerance in the method 1. 108

60747-4 © IEC:2007 – 5 –
Figure 48 – Circuit for the verification of source mismatch tolerance in the method 2. 110
Figure 49 – Circuit for the verification of load mismatch ruggedness .111
Figure 50 – Circuit for the measurements of gate-source breakdown voltage, V .119
(BR)GSO
Figure 51 – Circuit for the measurements of gate-drain breakdown voltage, V .119
(BR)GDO
Figure 52 – Circuit for the measurement of thermal resistance, channel-to-case . 120
Figure 53 – Timing chart of DC pulse to be supplied to the device being measured .122
Figure 54 – Calibration curve V = f(T ) for fixed I , evaluation of α .123
GSF ch G(ref)
Figure 55 – V in function of delay time τ .124
GSF2 4
Figure 56 – Circuit for the measurement of output power at specified input power . 125
Figure 57 – Circuit for the measurements of the noise figure and associated gain. 130

Table 1 – Electrical limiting values .84
Table 2 – DC characteristics .85
Table 3 – RF characteristics .86
Table 4 – Replacing rule for terms .87
Table 5 – Replacing rule for symbols in the case of constant base current.88
Table 6 – Replacing rule for symbols in the case of constant base voltage .88
Table 7 – Electrical limiting values .116
Table 8 – DC characteristics .116
Table 9 – RF characteristics .117
Table 10 – Replacing rules for terms.118
Table 11 – Replacing rules for symbols.118
Table 12 – Operating conditions and Test circuits .136
Table 13 – Failure criteria and measurement conditions .138

– 6 – 60747-4 © IEC:2007
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
DISCRETE DEVICES –
Part 4: Microwave diodes and transistors

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
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with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
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4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with an IEC Publication.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-4 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
This second edition cancels and replaces the first edition, published in 1991, its amendments
1, 2 and 3 (1993, 1999 and 2001, respectively), and constitutes a technical revision.
The major technical changes with regard to the previous edition are as follows:
a) the clause of bipolar transistors has been added;
b) the clause of field-effect transistors has been amended.

60747-4 © IEC:2007 – 7 –
The text of this standard is based on the following documents:
FDIS Report on voting
47E/330/FDIS 47E/339/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
The list of all parts of the IEC 60747 series, under the general title Semiconductor devices –
Discrete devices, can be found on the IEC website.
The committee has decided that the contents of this publication will remain unchanged until
the maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in
the data related to the specific publication. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
– 8 – 60747-4 © IEC:2007
SEMICONDUCTOR DEVICES –
DISCRETE DEVICES –
Part 4: Microwave diodes and transistors

1 Scope
This part of IEC 60747 gives requirements for the following categories of discrete devices:
– variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic
multiplication, switching, limiting, phased shift, parametric amplification);
– mixer diodes and detector diodes;
– avalanche diodes (for direct harmonic generation, amplification);
– gunn diodes (for direct harmonic generation);
– bipolar transistors (for amplification, oscillation);
– field-effect transistors (for amplification, oscillation).
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60050-702:1992, International Electrotechnical Vocabulary – Chapter 702: Oscillations,
signals and related devices
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-7:2000, Semiconductor devices – Part 7: Bipolar transistors
IEC 60747-8:2000, Semiconductor devices – Part 8: Field-effect transistors
IEC 60747-16-1:2001, Semiconductor devices – Part 16-1: Microwave integrated circuits –
Amplifiers
Amendment 1(2007)
3 Variable capacitance, snap-off diodes and fast-switching schottky diodes
3.1 Variable capacitance diodes
3.1.1 General
The provisions of this part deal with diodes (excluding snap-off diodes) in which the variable
capacitance effect is used; they cover four applications: tuning, harmonic multiplication,
switching (including limiting), parametric amplification.

60747-4 © IEC:2007 – 9 –
The devices for these applications are defined as follows:
Diodes for tuning
Diodes which are used to vary the frequency of a tuned circuit.
These diodes are usually characterized a frequency of resonance much higher than the
frequency of use and have a known capacitance/voltage relationship.
Diodes for harmonic multiplication
These diodes must have a non-linear capacitance/voltage relationship at the frequency of
operation and a high ratio of cut-off frequency to operating frequency.
Diodes for switching (including limiting)
These diodes exhibit a fast transition from a high impedance state to a low impedance state
and vice versa and can be used to modulate or control the power level in microwave systems.
Diodes for parametric amplification
These diodes are intended to handle small amplitude signals and are most often used in low-
noise amplifiers.
3.1.2 Terminology and letter symbols
See 3.1.3.3.
3.1.3 Essential ratings and characteristics
3.1.3.1 General
3.1.3.1.1 Rating conditions
Variable capacitance diodes may be specified either as ambient rated or case rated devices
or, where appropriate, as both.
The ratings listed in 3.1.3.2 should be stated at the following temperatures:
– ambient-rated devices:
at an ambient temperature of 25 °C and at one higher temperature.
– case-rated devices:
at a reference point temperature of 25 °C and at another reference point temperature.
3.1.3.1.2 Application categories
The essential ratings and characteristics to be stated for each category of diode are marked
with a + sign in the following table:

– 10 – 60747-4 © IEC:2007
– column 1: tuning applications;
– column 2: harmonic multiplication applications;
– column 3: switching (including limiting) applications;
– column 4: parametric amplification applications.

3.1.3.2 Ratings (limiting values) Categories
The following ratings should be stated: 1 2 3 4
3.1.3.2.1 Temperatures
Range of operating temperatures + + + +
Range of storage temperatures + + + +
3.1.3.2.2 Voltages and currents
Maximum peak reverse voltage + + + +
Maximum mean forward current, where appropriate  + + +
Maximum peak forward current, where appropriate + + +
3.1.3.2.3 Power dissipation
Maximum dissipation, under stated conditions, over the operating + + + +
temperature range
3.1.3.3 Electrical characteristics

Unless otherwise specified, the following characteristics should be given
at 25 °C (see Figure 1)
3.1.3.3.1 Stray capacitance (C )
p
Typical value under specified conditions + + + +
3.1.3.3.2 Series inductance (L )
s
Typical value and, where appropriate, maximum value + + + +
under specified conditions
3.1.3.3.3 Terminal capacitance (C )

tot
a) Minimum and maximum values, at a specified bias voltage + + + +
and at a specified frequency (note 2)
b) Typical curve showing the relationship between terminal capacitance + + + +
and bias voltage
3.1.3.3.4 Junction capacitance (C )
j
Minimum and maximum values at a specified bias voltage (notes 2 and 3). + + + +
When the order of magnitude of C is the same as that of the terminal
p
capacitance C , a typical value should be given for C instead of minimum

tot j
and maximum values
3.1.3.3.5 Effective quality factor (Q)

Minimum values at two or more specified frequencies under specified +
bias conditions (note 4)
60747-4 © IEC:2007 – 11 –
Categories
1 2 3 4
3.1.3.3.6 Cut-off frequency
Minimum value under specified conditions (notes 4 and 5) + + +
3.1.3.3.7 Series resistance (r )
s
Maximum and/or typical values under specified conditions (note 4) + + + +
3.1.3.3.8 Reverse current
Maximum value at a specified reverse voltage + + + +
3.1.3.3.9 Thermal resistance
Maximum value between junction and ambient, or between the junction + + +
and a specified reference point
3.1.3.3.10 Switching time
Typical value under specified conditions +
3.1.3.3.11 Stored charge or minority carrier life time
Typical value, for either stored charge under specified conditions
including bias, or minority carrier life time under specified conditions + +
3.1.3.3.12 Transition time
Typical value, under specified conditions, together with a specified +
measurement circuit (note 1)
NOTE 1 See definition in 3.2.2.
NOTE 2 For categories 1, 2 and 3, the specified bias voltage should be –6 V and for category 4, the specified
bias voltage should be 0 V.
NOTE 3 The relationship between the junction capacitance and bias voltage should be represented either by a
typical curve or by a mathematical form. The mathematical form should be as follows:
γ
C = K (V + φ)
j
where V is the magnitude of the applied reverse voltage and K, φ and γ are three constants. The manufacturer
φ and γ.
should specify the typical values for K,
NOTE 4 If the Q value and the series resistance are not specified for category 1, then the cut-off frequency must
be specified.
NOTE 5 The cut-off frequency f is defined as:
c
f =
c
2πrC
sj
where r is the series resistance and C is the capacitance of the junction measured at a specified bias point r is
s j s
determined by the equivalent circuit shown in Figure 1 below; its value depends on the measuring method used
and on the bias voltage.
– 12 – 60747-4 © IEC:2007
IEC  1108/01
Key
C junction capacitance C stray capacitance
j p
r series resistance L series inductance
s s
r low frequency resistance of the junction
j
In general, r is sufficiently high to be neglected.
j
Figure 1 – Equivalent circuit
3.1.3.4 Application data
For harmonic multiplication applications, the efficiency should be stated.
3.1.4 Measuring methods
3.1.4.1 Reverse current I
R
a) Purpose
To measure the reverse current of a diode under specified reverse voltage.
b) Circuit diagram
IEC  1109/01
Key
D diode being measured
Figure 2 – Circuit for the measurement of reverse current I
R
60747-4 © IEC:2007 – 13 –
c) Circuit description and requirements
R is a calibrated resistor (pulse measurement only).
R is a protective resistor.
If a pulse measurement is required, the variable voltage generator is replaced by a voltage
pulse generator, the voltmeter is replaced by a peak-reading instrument and the ammeter
is replaced by a peak-reading voltmeter across the calibrated resistor R .
d) Measurement procedure
The temperature is set to the specified value.
The variable voltage generator is adjusted to obtain the specified value of reverse voltage
V across the diode.
R
The reverse current I is read from the ammeter A.
R
e) Specified conditions
– Ambient, case or reference-point temperature (t , t , t ).
amb case ref
– Reverse voltage (V ).
R
– Pulse width and duty cycle, where applicable.
3.1.4.2 Forward voltage V
F
a) Purpose
To measure the forward voltage across a signal or switching diode under specified
conditions.
b) Circuit diagram
IEC  1110/01
Key
D diode being measured
Figure 3 – Circuit for the measurement of forward voltage V
F
c) Circuit description and requirements
R is a calibrated resistor (pulse measurement only).
R is a high value resistor.
If a pulse measurement is required, the variable voltage generator is replaced by a voltage
pulse generator, the voltmeter is replaced by a peak-reading instrument and the ammeter
is replaced by a peak-reading voltmeter across the calibrated resistor R .
– 14 – 60747-4 © IEC:2007
d) Measurement procedure
The temperature is set to the specified value.
The variable voltage generator is adjusted to obtain the specified value of forward current I .
F
The forward voltage V is read from the voltmeter V.
F
e) Specified conditions
– Ambient or case temperature (t , t ).
amb case
– Forward current (I ).
F
– Pulse width and duty cycle, where applicable.
3.1.4.3 Capacitance C
tot
The measurement of total capacitance (C = C + C ) should be made at a sufficiently low
tot j p
frequency (below microwave frequencies) so that the effects of the lead inductance may be
neglected. Under these conditions, the measured value of terminal capacitance is
independent of frequency.
The total capacitance at a given bias condition is obtained by the method stated hereafter.
a) Purpose
To measure the total capacitance of a diode under specified conditions.
b) Circuit diagram
IEC  1111/01
Key
D diode being measured
Figure 4 – Circuit for the measurement of capacitance C
tot
c) Circuit description and requirements
The conductance of resistor R should be low compared with the admittance of the diode
being measured.
The capacitor C must be able to withstand the reverse bias voltage of the diode and
should present a short circuit at the frequency of measurement.
d) Precautions to be observed
The bridge shall be able to withstand the reverse bias voltage of the diode without
affecting the accuracy of the measurement. If the measured capacitance is very small, the
mounting conditions will affect the accuracy of the results and they should be specified.

60747-4 © IEC:2007 – 15 –
e) Measurement procedure
The temperature is set to the specified value.
The voltage across the diode is adjusted to the specified value V . Then the voltmeter V is
R
taken out of the circuit and the capacitance of the diode being measured is determined
using the a.c. bridge by subtracting the value without the diode in its mounting from the
value with the diode in its mounting.
f) Specified conditions
Ambient or case temperature (t , t ).
amb case
– Reverse voltage (V ).
R
– Measurement frequency, if different from 1 MHz.
– Mounting conditions of the diode, if necessary.
NOTE The variation of total capacitance with bias voltage may be found by measurements as described
above, made at a number of bias points.
3.1.4.4 Effective quality factor Q
The effective quality factor Q of a variable capacitance diode can be measured using
a "Q-meter" or an impedance bridge (see Figure 5).
IEC  1112/01
Key
D diode being measured
V voltage source
Q Q-meter
Figure 5 – Circuit for the measurement of effective quality factor
Description
a) The voltage source should present a high impedance at the frequency of measurement
compared to that of the capacitor C; this is obtained by means of series resistor R.
b) C is a decoupling capacitor having a low impedance at the frequency of measurement.
c) L is an inductor chosen to resonate with the parallel circuit capacitor at the frequency of
measurement.
d) It is assumed that there is a low resistance path through the Q-meter between points A
and B.
– 16 – 60747-4 © IEC:2007
The basic circuit of such a meter consists of a signal generator of negligible output impedance
driving a high Q inductance in series with a high-quality variable capacitance. The factor Q of
this circuit can be measured at a given frequency by tuning the variable capacitance for
resonance.
Q is given by the ratio of the voltage across the capacitance to the voltage supplied by the
generator. In order to measure the factor Q of a variable capacitance diode, it shall be
connected in parallel with the variable capacitance in the Q-meter. DC isolating components
shall be used so that the desired bias voltage may be applied to the diode being measured,
but the biasing circuit must remain connected to the Q-meter throughout the measurement.
Four measurements are made: Q and C , the factor Q of the circuit and the magnitude of the
variable capacitance with the diode not in circuit; and Q and C , the factor Q of the circuit
2 2
and the value of the variable capacitance for resonance at the same frequency with the diode
connected to the circuit.
The factor Q of the diode is then calculated using the expression:
⎛ ⎞⎛ ⎞
Q Q C − C
1 2 1 2
Q 　=⎜ ⎟⎜ ⎟
⎜ ⎟⎜ ⎟
Q −Q C
⎝ 1 2⎠⎝ 1 ⎠
Two precautions are necessary:
1) The measurement shall be made at a frequency at which the reactance of the self-
inductance of the diode is negligible compared with the reactance of the capacitor.
2) The magnitude of the signal applied to the variable capacitance diode shall be kept
relatively small so that only a small excursion is made over the non-linear capacitance
characteristic. The result must be independent of the signal level.
NOTE
1 f
c
Q = =
2π f × C × r f
j s
Since C ≤ C for these diodes, C and C can be used interchangeably in this section.
p j t j
3.1.4.5 Series resistance r
s
The effective value of series resistance r can be deduced from the values of C and f using
s j
the formula given in 3.1.4.4.
3.1.4.6 Series inductance L
s
Measurements should be conducted in the frequency region where the effect of stray capa-
citance C relative to the terminal impedance of the diode can be neglected.
p
The diode is inserted in the measuring head as shown in Figure 6 which is set on the tip of
the inner conductor of the coaxial slotted line.

60747-4 © IEC:2007 – 17 –
VSWR
IEC  1381/07
Key
VSWR voltage standing wave ratio meter
x distance
H  diode head
L  slotted line
Att attenuator
Co coupler
G  microwave generator
S  bias supply
f  frequency meter
Figure 6 – Circuit for the measurement of series inductance
Measurements are as follows:
First, determine position x where the standing wave voltage is minimum as measured at a
m
bias voltage in the forward region where the terminal capacitance becomes independent of
the change of bias voltage. This bias voltage should be sufficiently high so that an increase of
this voltage would not affect the result of the measurement. (This condition may be satisfied
when about 5 mA forward current flows.)
Next, without any break in the impedance of the line, a metal block is inserted in the
measuring head in place of the diode. This is done in order to provide a short-circuit at the
reference plane position which is defined and should be specified by the manufacturer of the
diode. In this condition, position x nearest to x and larger than x is found where the
s m m
standing wave voltage is minimum.
The reactance of the diode is obtained by the following equation:
2π(x − x )
s m
X = Z tan
o
λ
where
Z is the characteristic impedance of the coaxial line;
o
λ is the wavelength of the measuring frequency.
The series inductance L can be obtained by use of the following equation:
s
X
L =
s
2πf
NOTE The structure of some devices may prevent this method of measurement from giving correct results. In this
case, a value for the inductance will have to be given by the manufacturer.

– 18 – 60747-4 © IEC:2007
3.1.4.7 Thermal resistance R
th
3.1.4.7.1 Purpose
To measure the thermal resistance between the junction and a reference point (preferably at
the case) of the device being measured.
3.1.4.7.2 Principle of the method
The temperatures T and T of the reference point of the device are measured for two
1 2
different power dissipations P and P and cooling conditions causing the same junction
1 2
temperature. The forward voltage at a reference current is used to verify that the same
junction temperature has been reached.
TT−
R =
th
PP−
3.1.4.7.3 Basic circuit diagram
IEC  1114/01
Key
D device being measured
Figure 7 – Circuit for the measurement of thermal resistance R
th
3.1.4.7.4 Circuit description and requirements
I = loa
...