IEC 60747-14-3:2009

Semiconductor devices - Part 14-3: Semiconductor sensors - Pressure sensors

IEC 60747-14-3:2009 specifies requirements for semiconductor pressure sensors measuring absolute, gauge or differential pressures. The major technical change with regard to the previous edition is the addition of a new subclause 5.9 (measuring method of linearity).
This publication should be read in conjunction with IEC 60747-1:2006.

Dispositifs à semiconducteurs - Partie 14-3: Capteurs à semiconducteurs - Capteurs de pression

La CEI 60747-14-3:2009 spécifie les exigences pour les capteurs de pression à semiconducteurs mesurant les pressions absolues, manométriques ou différentielles. Les modifications techniques majeures par rapport à l'édition précédente sont les suivantes: ajout d'un nouveau paragraphe 5.9 (méthode de mesure de la linéarité).
Cette publication doit être lue conjointement avec la CEI 60747-1:2006.

General Information

• Status: Published
• Publication Date: 28-Apr-2009
• ICS: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION
• ICS: 31.080.99 - Other semiconductor devices
• Technical Committee: SC 47E - Discrete semiconductor devices
• Drafting Committee: WG 1 - TC 47/SC 47E/WG 1
• Current Stage: PPUB - Publication issued
• Start Date: 15-Jul-2009
• Completion Date: 29-Apr-2009

Relations

• Revises: IEC 60747-14-3:2001 - Semiconductor devices - Part 14-3: Semiconductor sensors - Pressure sensors
• Effective Date: 05-Sep-2023

Standards Content (Sample)

IEC 60747-14-3 ®
Edition 2.0 2009-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 14-3: Semiconductor sensors – Pressure sensors

Dispositifs à semiconducteurs –
Partie 14-3: Capteurs à semiconducteurs – Capteurs de pression

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IEC 60747-14-3 ®
Edition 2.0 2009-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 14-3: Semiconductor sensors – Pressure sensors

Dispositifs à semiconducteurs –
Partie 14-3: Capteurs à semiconducteurs – Capteurs de pression

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
R
CODE PRIX
ICS 31.080.99 ISBN 978-2-88910-277-8
– 2 – 60747-14-3 © IEC:2009
CONTENTS
FOREWORD.4
INTRODUCTION.6
1 Scope.7
2 Normative references .7
3 Terminology and letter symbols .7
3.1 General terms .7
3.1.1 Semiconductor pressure sensors.7
3.1.2 Sensing methods.7
3.2 Definitions .9
3.3 Letter symbols.12
3.3.1 General .12
3.3.2 List of letter symbols .12
4 Essential ratings and characteristics.13
4.1 General .13
4.1.1 Sensor materials – for piezoelectrical sensors .13
4.1.2 Handling precautions.13
4.1.3 Types .13
4.2 Ratings (limiting values) .13
4.2.1 Pressures .13
4.2.2 Temperatures .13
4.2.3 Voltage.13
4.3 Characteristics .13
4.3.1 Full-scale span (V ) .13
FSS
4.3.2 Full-scale output (V ).13
FSO
4.3.3 Sensitivity (S).13
4.3.4 Temperature coefficient of full-scale sensitivity (α ) .14
s
4.3.5 Offset voltage (V ).14
os
4.3.6 Temperature coefficient of offset voltage (α ) .14
vos
4.3.7 Pressure hysteresis of output voltage (H ) .14
ohp
4.3.8 Temperature hysteresis of output voltage (H ) .14
ohT
4.3.9 Response time .14
4.3.10 Warm-up .14
4.3.11 Dimensions .14
4.3.12 Mechanical characteristics.14
5 Measuring methods .14
5.1 General .14
5.1.1 General precautions .14
5.1.2 Measuring conditions.14
5.2 Output voltage measurements .15
5.2.1 Purpose.15
5.2.2 Principles of measurement .15
5.3 Sensitivity (S) .16
5.3.1 Purpose.16
5.3.2 Measuring procedure.16
5.3.3 Specified conditions .16
5.4 Temperature coefficient of sensitivity (α ) .16
s
60747-14-3 © IEC:2009 – 3 –
5.4.1 Purpose.16
5.4.2 Specified conditions .16
5.5 Temperature coefficient of full-scale span (α V ) and maximum
FSS
temperature deviation of full-scale span (ΔV ) .17
FSS
5.5.1 Purpose.17
5.5.2 Specified conditions .17
5.6 Temperature coefficient of offset voltage (α ) and (ΔV ).17
Vos os
5.6.1 Purpose.17
5.6.2 Specified conditions .17
5.7 Pressure hysteresis of output voltage (H ) .18
ohp
5.7.1 Purpose.18
5.7.2 Circuit diagram and circuit description .18
5.7.3 Specified conditions .18
5.8 Temperature hysteresis of output voltage (H ) .18
ohT
5.8.1 Purpose.18
5.8.2 Measuring procedure.18
5.8.3 Specified conditions .18
5.9 Linearity .18
5.9.1 Purpose.18
5.9.2 Specified conditions .18
5.9.3 Measuring procedure.18

Figure 1 – Basic circuit for measurement of output voltage .15
Figure 2 – Linearity test .19

– 4 – 60747-14-3 © IEC:2009
INTERNATIONAL ELECTROTECHNICAL COMMISSION
___________
SEMICONDUCTOR DEVICES –
Part 14-3: Semiconductor sensors –
Pressure sensors
FOREWORD
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