IEC 60749-34-1:2025
(Main)Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module
Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module
IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor.
If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document.
This test caused wear-out and is considered destructive.
Dispositifs à semiconducteurs - Méthodes d’essais mécaniques et climatiques - Partie 34-1: Essai de cycles en puissance pour modules de puissance à semiconducteurs
L’IEC 60749-34-1:2025 décrit une méthode d’essai utilisée pour déterminer la capacité des modules de puissance à semiconducteurs à résister aux contraintes thermiques et mécaniques du fait du cyclage de la dissipation de puissance des semiconducteurs internes et des connecteurs internes. Elle est basée sur l’IEC 60749‑34, mais est développée spécifiquement pour les modules de puissance à semiconducteurs, y compris les transistors bipolaires à grille isolée (IGBT), les transistors à effet de champ à structure métal-oxyde-semiconducteur (MOSFET), les diodes et les thyristors.
En cas de demande d’un client pour une utilisation individuelle ou une ligne directrice spécifique à une application (par exemple la ligne directrice AQG 324 de l’ECPE), les détails de la méthode d’essai peuvent être basés sur ces exigences s’ils s’écartent du contenu du présent document.
Cet essai provoque une usure et est considéré comme destructif.
General Information
Standards Content (Sample)
IEC 60749-34-1 ®
Edition 1.0 2025-06
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices - Mechanical and climatic test methods -
Part 34-1: Power cycling test for power semiconductor module
Dispositifs à semiconducteurs - Méthodes d’essais mécaniques et climatiques -
Partie 34-1: Essai de cycles en puissance pour modules de puissance à
semiconducteurs
ICS 31.080.01 ISBN 978-2-8327-0496-7
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CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Test apparatus and structure of DUT . 8
5 Procedure . 12
5.1 General . 12
5.2 Determination of T , T and R . 15
vj(min) vj(max) th(j-c)
5.2.1 General. 15
5.2.2 Real-time temperature measurement . 15
5.2.3 Temperature calculation method . 17
6 Test conditions . 17
6.1 General . 17
6.2 Power cycling test (short-time test) . 18
6.3 Power cycling test (long-time test) . 18
6.4 Test conditions and objectives . 19
6.4.1 Certification test . 19
6.4.2 Lifetime model validation test . 19
7 Measurements. 20
8 Failure criteria . 20
Annex A (informative) Estimation of the power cycling capability . 22
A.1 Simple Weibull regression method (the "mean of m method") . 22
A.1.1 General. 22
A.1.2 Improve estimation accuracy under small sample size conditions . 22
A.1.3 Lifetime estimation using the "mean of m method" . 22
A.1.4 Estimation of the power cycling capability . 23
A.2 Least square regression method . 24
Bibliography . 28
Figure 1 – Example of the basic structure of a power semiconductor module
(schematic diagram) (case type module for industrial use) . 9
Figure 2 – A basic test circuit for the power cycling test (for IGBT module) . 9
Figure 3 – A basic test circuit for power MOSFET module . 11
Figure 4 – A basic test circuit for diode module. 11
Figure 5 – A basic test circuit for thyristor module . 12
Figure 6 – A basic circuit of 6-in-1 IGBT module . 13
Figure 7 – Temperature change profile and on/off cycle of the power cycling test
(short-time) . 14
Figure 8 – Temperature change profile and on/off cycle of the power cycling test (long-
time) . 15
Figure A.1 – Lifetime estimation by the mean of m method . 23
Figure A.2 – Power cycling capability in the power cycling test (short-time) . 23
Figure A.3 – Power cycling capability in the power cycling test (long-time) . 24
Figure A.4 – Power cycling tests at a minimum of 2 ΔT conditions . 26
Figure A.5 – Curve fitting by the regression analysis and determination of the
parameter of the lifetime model . 26
Figure A.6 – Normalization of the number of cycles to one ΔT and T by the
norm norm
N = f(ΔT, T)-model . 26
f
Figure A.7 – Fit procedure for the Weibull graph for the normalized cycle numbers . 26
Figure A.8 – Deduction of the lifetime curve for the product that crosses the specified
failure rate percentage x . 27
Table 1 – Test conditions . 18
Table 2 – Failure criteria for long-time and short-time tests . 21
Table A.1 – The sample size N for power cycling tests . 22
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
Semiconductor devices - Mechanical and climatic test methods -
Part 34-1: Power cycling test for power semiconductor module
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