ASTM E1249-10

Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources

SIGNIFICANCE AND USE
Division of the Co-60 Hardness Testing into Five Parts:  
The equilibrium absorbed dose shall be measured with a dosimeter, such as a TLD, located adjacent to the device under test. Alternatively, a dosimeter may be irradiated in the position of the device before or after irradiation of the device.
This absorbed dose measured by the dosimeter shall be converted to the equilibrium absorbed dose in the material of interest within the critical region within the device under test, for example the SiO 2 gate oxide of an MOS device.
A correction for absorbed-dose enhancement effects shall be considered. This correction is dependent upon the photon energy that strikes the device under test.
A correlation should be made between the absorbed dose in the critical region (for example, the gate oxide mentioned in 4.1.2) and some electrically important effect (such as charge trapped at the Si/SiO2 interface as manifested by a shift in threshold voltage).
An extrapolation should then be made from the results of the test to the results that would be expected for the device under test under actual operating conditions.
SCOPE
1.1 This practice covers recommended procedures for the use of dosimeters, such as thermoluminescent dosimeters (TLD's), to determine the absorbed dose in a region of interest within an electronic device irradiated using a Co-60 source. Co-60 sources are commonly used for the absorbed dose testing of silicon electronic devices.
Note 1—This absorbed-dose testing is sometimes called “total dose testing” to distinguish it from “dose rate testing.”
Note 2—The effects of ionizing radiation on some types of electronic devices may depend on both the absorbed dose and the absorbed dose rate; that is, the effects may be different if the device is irradiated to the same absorbed-dose level at different absorbed-dose rates. Absorbed-dose rate effects are not covered in this practice but should be considered in radiation hardness testing.    
1.2 The principal potential error for the measurement of absorbed dose in electronic devices arises from non-equilibrium energy deposition effects in the vicinity of material interfaces.
1.3 Information is given about absorbed-dose enhancement effects in the vicinity of material interfaces. The sensitivity of such effects to low energy components in the Co-60 photon energy spectrum is emphasized.  
1.4 A brief description is given of typical Co-60 sources with special emphasis on the presence of low energy components in the photon energy spectrum output from such sources.
1.5 Procedures are given for minimizing the low energy components of the photon energy spectrum from Co-60 sources, using filtration. The use of a filter box to achieve such filtration is recommended.
1.6 Information is given on absorbed-dose enhancement effects that are dependent on the device orientation with respect to the Co-60 source.
1.7 The use of spectrum filtration and appropriate device orientation provides a radiation environment whereby the absorbed dose in the sensitive region of an electronic device can be calculated within defined error limits without detailed knowledge of either the device structure or of the photon energy spectrum of the source, and hence, without knowing the details of the absorbed-dose enhancement effects.
1.8 The recommendations of this practice are primarily applicable to piece-part testing of electronic devices. Electronic circuit board and electronic system testing may introduce problems that are not adequately treated by the methods recommended here.
1.9 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

General Information

• Status: Historical
• Publication Date: 30-Nov-2010
• ICS: 17.240 - Radiation measurements
• Technical Committee: E10 - Nuclear Technology and Applications
• Drafting Committee: E10.07 - Radiation Dosimetry for Radiation Effects on Materials and Devices

Relations

• Replaces: ASTM E1249-00(2005) - Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources
• Effective Date: 01-Dec-2010
• Referred By: ASTM E1894-18 - Standard Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources
• Effective Date: 01-Dec-2010
• Referred By: ASTM F1467-18 - Standard Guide for Use of an X-Ray Tester (≈10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits
• Effective Date: 01-Dec-2010
• Referred By: ASTM E1854-19 - Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts
• Effective Date: 01-Dec-2010
• Referred By: ASTM F1190-18 - Standard Guide for Neutron Irradiation of Unbiased Electronic Components
• Effective Date: 01-Dec-2010
• Referred By: ASTM E1250-15(2020) - Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices
• Effective Date: 01-Dec-2010
• Referred By: ASTM F1892-12(2018) - Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
• Effective Date: 01-Dec-2010
• Referred By: ASTM ISO/ASTM52116-13(2020) - Standard Practice for Dosimetry for a Self-Contained Dry-Storage Gamma Irradiator
• Effective Date: 01-Dec-2010
• Referred By: ASTM F996-11(2018) - Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics (Withdrawn 2023)
• Effective Date: 01-Dec-2010
• Referred By: ASTM E666-21 - Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation
• Effective Date: 01-Dec-2010

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or withdrawn.
Contact ASTM International (www.astm.org) for the latest information
Designation: E1249 − 10
StandardPractice for
Minimizing Dosimetry Errors in Radiation Hardness Testing
1
of Silicon Electronic Devices Using Co-60 Sources
This standard is issued under the fixed designation E1249; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
This standard has been approved for use by agencies of the U.S. Department of Defense.
1. Scope 1.6 Information is given on absorbed-dose enhancement
effectsthataredependentonthedeviceorientationwithrespect
1.1 This practice covers recommended procedures for the
to the Co-60 source.
use of dosimeters, such as thermoluminescent dosimeters
(TLD’s),todetermine the absorbed dose in a regionofinterest 1.7 The use of spectrum filtration and appropriate device
within an electronic device irradiated using a Co-60 source. orientation provides a radiation environment whereby the
Co-60 sources are commonly used for the absorbed dose absorbed dose in the sensitive region of an electronic device
testing of silicon electronic devices. can be calculated within defined error limits without detailed
knowledge of either the device structure or of the photon
NOTE 1—This absorbed-dose testing is sometimes called “total dose
energyspectrumofthesource,andhence,withoutknowingthe
testing” to distinguish it from “dose rate testing.”
details of the absorbed-dose enhancement effects.
NOTE 2—The effects of ionizing radiation on some types of electronic
devicesmaydependonboththeabsorbeddoseandtheabsorbeddoserate;
1.8 The recommendations of this practice are primarily
that is, the effects may be different if the device is irradiated to the same
applicable to piece-part testing of electronic devices. Elec-
absorbed-dose level at different absorbed-dose rates. Absorbed-dose rate
effects are not covered in this practice but should be considered in tronic circuit board and electronic system testing may intro-
radiation hardness testing.
duce problems that are not adequately treated by the methods
recommended here.
1.2 The principal potential error for the measurement of
absorbed dose in electronic devices arises from non-
1.9 This standard does not purport to address all of the
equilibriumenergydepositioneffectsinthevicinityofmaterial
safety problems, if any, associated with its use. It is the
interfaces.
responsibility of the user of this standard to establish appro-
priate safety and health practices and determine the applica-
1.3 Information is given about absorbed-dose enhancement
bility of regulatory limitations prior to use.
effects in the vicinity of material interfaces. The sensitivity of
such effects to low energy components in the Co-60 photon
2. Referenced Documents
energy spectrum is emphasized.
2
2.1 ASTM Standards:
1.4 A brief description is given of typical Co-60 sources
E170Terminology Relating to Radiation Measurements and
with special emphasis on the presence of low energy compo-
Dosimetry
nentsinthephotonenergy spectrum output from suchsources.
E666Practice for CalculatingAbsorbed Dose From Gamma
1.5 Procedures are given for minimizing the low energy
or X Radiation
components of the photon energy spectrum from Co-60 E668Practice for Application of Thermoluminescence-
sources, using filtration.The use of a filter box to achieve such
Dosimetry (TLD) Systems for Determining Absorbed
filtration is recommended. DoseinRadiation-HardnessTestingofElectronicDevices
E1250Test Method forApplication of Ionization Chambers
to Assess the Low Energy Gamma Component of
1
This practice is under the jurisdiction of ASTM Committee E10 on Nuclear
Technology and Applicationsand is the direct responsibility of Subcommittee
2
E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices. For referenced ASTM standards, visit the ASTM website, www.astm.org, or
Current edition approved Dec. 1, 2010. Published January 2011. Originally contact ASTM Customer Service at [e-mail]. For Annual Book of ASTM
approvedin1988.Lastpreviouseditionapprovedin2005asE1249–00(2005).DOI: Standards volume information, refer to the standard’s Document Summary page on
10.1520/E1249-10. the ASTM website.
Copyright © ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States
1

---------------------- Page: 1 ----------------------
E1249 − 10
Cobalt-60 Irradiators Used in Radiation-Hardness Testing dosimeter, or both, for the purpose of minimizing low energy
of Silicon Electronic Devices components of the incident photon energy spectrum.
2.2 International Commission on Radiation Units and Mea- 3.10 spectrum filter—material layer intercepting phot
...

This document is not anASTM standard and is intended only to provide the user of anASTM standard an indication of what changes have been made to the previous version. Because
it may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current version
of the standard as published by ASTM is to be considered the official document.
Designation:E1249–00(Reapproved2005) Designation: E1249 – 10
Standard Practice for
Minimizing Dosimetry Errors in Radiation Hardness Testing
1
of Silicon Electronic Devices Using Co-60 Sources
This standard is issued under the fixed designation E1249; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision.Anumber in parentheses indicates the year of last reapproval.A
superscript epsilon (´) indicates an editorial change since the last revision or reapproval.
This standard has been approved for use by agencies of the Department of Defense.
1. Scope
1.1 This practice covers recommended procedures for the use of dosimeters, such as thermoluminescent dosimeters (TLD’s),
to determine the absorbed dose in a region of interest within an electronic device irradiated using a Co-60 source. Co-60 sources
are commonly used for the absorbed dose testing of silicon electronic devices.
NOTE 1—This absorbed-dose testing is sometimes called “total dose testing” to distinguish it from “dose rate testing.”
NOTE 2—The effects of ionizing radiation on some types of electronic devices may depend on both the absorbed dose and the absorbed dose rate; that
is, the effects may be different if the device is irradiated to the same absorbed-dose level at different absorbed-dose rates.Absorbed-dose rate effects are
not covered in this practice but should be considered in radiation hardness testing.
1.2 Theprincipalpotentialerrorforthemeasurementofabsorbeddoseinelectronicdevicesarisesfromnon-equilibriumenergy
deposition effects in the vicinity of material interfaces.
1.3 Information is given about absorbed-dose enhancement effects in the vicinity of material interfaces.The sensitivity of such
effects to low energy components in the Co-60 photon energy spectrum is emphasized.
1.4 Abrief description is given of typical Co-60 sources with special emphasis on the presence of low energy components in
the photon energy spectrum output from such sources.
1.5 Procedures are given for minimizing the low energy components of the photon energy spectrum from Co-60 sources, using
filtration. The use of a filter box to achieve such filtration is recommended.
1.6 Information is given on absorbed-dose enhancement effects that are dependent on the device orientation with respect to the
Co-60 source.
1.7 The use of spectrum filtration and appropriate device orientation provides a radiation environment whereby the absorbed
dose in the sensitive region of an electronic device can be calculated within defined error limits without detailed knowledge of
either the device structure or of the photon energy spectrum of the source, and hence, without knowing the details of the
absorbed-dose enhancement effects.
1.8 The recommendations of this practice are primarily applicable to piece-part testing of electronic devices. Electronic circuit
board and electronic system testing may introduce problems that are not adequately treated by the methods recommended here.
1.9 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility
of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory
limitations prior to use.
2. Referenced Documents
2
2.1 ASTM Standards:
2
E170 Terminology Relating to Radiation Measurements and Dosimetry
2
E666 Practice for Calculating Absorbed Dose From Gamma or X Radiation
E668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in
2
Radiation-Hardness Testing of Electronic Devices
E1250 Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60
Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices
2.2 International Commission on Radiation Units and Measurements Reports:
1
This practice is under the jurisdiction of ASTM Committee E10 on Nuclear Technology and Applications and is the direct responsibility of Subcommittee E10.07 on
Radiation Dosimetry for Radiation Effects on Materials and Devices.
Current edition approved JuneDec. 1, 2005.2010. Published June 2005.January 2011. Originally approved in 1988. Last previous edition approved in 20002005 as
E1249–00.E1249–00(2005). DOI: 10.1520/E1249-00R05.10.1520/E1249-10.
2
ForreferencedASTMstandards,visittheASTMwebsite,www.astm.org,[e-mail] Annual Book of ASTM Standards
volume information, refer to
...