ASTM F154-02

Standard Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces (Withdrawn 2003)

SCOPE
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 The purpose of this guide is to list, illustrate, and provide reference for various characteristic features and contaminants that are seen on highly specular silicon wafers. Recommended practices for delineation and observation of these artifacts are referenced. The artifacts described in this guide are intended to parallel and support the content of the SEMI M18. These artifacts and common synonyms are arranged alphabetically in Tables 1 and 2 and illustrated in Figs. 1-68 .

General Information

• Status: Withdrawn
• Publication Date: 09-Jan-2001
• Withdrawal Date: 09-May-2003
• ICS: 17.040.20 - Properties of surfaces
• Technical Committee: F01 - Electronics

Relations

• Replaces: ASTM F154-00 - Standard Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
• Effective Date: 10-Jan-2001

Standards Content (Sample)

NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 154 – 02
Standard Guide for
Identification of Structures and Contaminants Seen on
1
Specular Silicon Surfaces
This standard is issued under the fixed designation F 154; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
A,B,C
TABLE 1 Wafer Structural Defects
1. Scope
Relevant
1.1 The purpose of this guide is to list, illustrate, and
Common Synonyms and Illustrating
Defect ASTM
Acronyms Figures
provide reference for various characteristic features and con-
Standard
taminants that are seen on highly specular silicon wafers.
Dislocation etch pit Etch Pit, Pit 1-5 F 1725
Recommended practices for delineation and observation of
Epitaxial stacking fault epi stacking fault, (ESF) 6-10 F 1726
Epitaxial Growth Hillock
these artifacts are referenced. The artifacts described in this
Lineage Grain Boundary 11 F 1725
guide are intended to parallel and support the content of the
Oxidation induced stacking oxidation stacking fault, 12-18 F 1727
SEMI M18. These artifacts and common synonyms are ar-
fault (OSF), oxidation induced F 1809
stacking fault (OISF)
ranged alphabetically in Tables 1 and 2 and illustrated in Figs.
Oxide precipitates bulk micro-defect, (BMD), 19 F 1727
1-68.
bulk precipitate F 1809
Shallow pits S-pit, saucer pit 20-21 F 1727
2. Referenced Documents
F 1809
Slip Slip Lines 22-25 F 1725
2.1 ASTM Standards:
F 1727
F 523 Practice for Unaided Visual Inspection of Polished
F 1809
2
Swirl 26-27 F 1725
Silicon Wafer Surfaces
F 1727
2
F 1241 Terminology of Silicon Technology
F 1809
F 1725 Guide for Analysis of Crystallographic Perfection of Twin Twin Lamella 28-30 F 1725
2 Twin Line
Silicon Ingots
A
Magnifications given in the attached illustrations are for an original frame size
F 1726 Guide for Analysis of Crystallographic Perfection of
2 of 50350-mm except as noted.
Silicon Wafers
B
Unless otherwise noted, all attached figures illustrate polished silicon wafer
F 1727 Practice for Detection of Oxidation Induced Defects
surfaces.
C
2
Unless otherwise noted, all attached figures with magnified images were
in Polished Silicon Wafers
created using interference contrast microscope equipment.
F 1809 Guide for Selection and Use of Etching Solutions to
2
Delineate Structural Defects in Silicon
monly observed singularly discernible structures on specular
F 1810 Test Method for Counting Preferentially Etched or
silicon surfaces. Ambiguities and uncertainties regarding sur-
2
Decorated Surface Defects in Silicon Wafers
face defects may be resolved by reference to this guide. There
2.2 SEMI Standard:
is close alignment between this guide and common specifica-
M18 Format for Silicon Wafer Specification Form for Order
tions used for the purchase of silicon wafers.
3
Entry
5. Interferences
3. Terminology
5.1 Defects, structures, features, or artifacts revealed or
3.1 Related terminology may be found in Terminology
enhanced by the referenced methods and exhibited in this guide
F 1241.
must be carefully interpreted. Unless utmost care is exercised,
the identification of the structure may be ambiguous.
4. Significance and Use
4.1 This guide contains a compilation of the most com-
6. Procedure
6.1 Refer to Practices F 523 and F 1727, Guides F 1725,
1
This guide is under the jurisdiction of Committee F01 on Electronics and is the
F 1726, and F 1809, and Test Method F 1810.
direct responsibility of Subcommittee F01.06 on Silicon Materials and Process
Control.
7. Keywords
Current edition approved Jan. 10, 2002. Published March 2002. Originally
published as F 154 – 72T. Last previous edition F 154 – 00.
7.1 contaminant; defects; dislocation; epitaxial; fracture;
2
Annual Book of ASTM Standards, Vol 10.05.
3 preferential etch; scratch; shallow pit; silicon; slip; stacking
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1

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NOTICE: This standard has either been superceded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
F 154
TABLE 2 Polished Surface Visual Characteristics
Relevant
Common Synonyms and Illustrating
Defect ASTM
Acronyms Figure
Standards
Area contamination Contamination, foreign 31-32 F 523
matter, residue
Crack Cleavage, fracture 33-38 F 523
Crater Slurry ring 39 F 523
Crow’s feet Contact damage 40 F 523
Dimple Depression 41-42 F 523
Dopant striation ring Striation 43 F 523
Edge chip Chip
...