ASTM F154-00

Standard Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces

SCOPE
1.1 The purpose of this guide is to list, illustrate, and provide reference for various characteristic features and contaminants that are seen on highly specular silicon wafers. Recommended practices for delineation and observation of these artifacts are referenced. The artifacts described in this guide are intended to parallel and support the content of the SEMI M18. These artifacts and common synonyms are arranged alphabetically in Tables 1 and 2 and illustrated in Figs. 1-68 .

General Information

• Status: Historical
• Publication Date: 09-Jan-2001
• ICS: 17.040.20 - Properties of surfaces
• Technical Committee: F01 - Electronics

Relations

• Replaced By: ASTM F154-02 - Standard Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces (Withdrawn 2003)
• Effective Date: 10-Jan-2001

Standards Content (Sample)

NOTICE: This standard has either been superseded and replaced by a new version or discontinued.
Contact ASTM International (www.astm.org) for the latest information.
Designation: F 154 – 00
Standard Guide for
Identification of Structures and Contaminants Seen on
Specular Silicon Surfaces
This standard is issued under the fixed designation F 154; the number immediately following the designation indicates the year of
original adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. A
superscript epsilon (e) indicates an editorial change since the last revision or reapproval.
A,B
TABLE 1 Wafer Structural Defects
1. Scope
Relevant
1.1 The purpose of this guide is to list, illustrate, and
Common Synonyms and Illustrating
Defect ASTM
Acronyms Figures
provide reference for various characteristic features and con-
Standard
taminants that are seen on highly specular silicon wafers.
Dislocation etch pit Etch Pit, Pit 1-5 F 1725
Recommended practices for delineation and observation of
Epitaxial stacking fault epi stacking fault, (ESF) 6-10 F 1726
Lineage Grain Boundary 11 F 1725
these artifacts are referenced. The artifacts described in this
Oxidation induced stacking oxidation stacking fault, 12-18 F 1727
guide are intended to parallel and support the content of the
fault (OSF), oxidation induced F 1809
SEMI M18. These artifacts and common synonyms are ar- stacking fault (OISF)
Oxide precipitates bulk micro-defect, (BMD), 19 F 1727
ranged alphabetically in Tables 1 and 2 and illustrated in Figs.
bulk precipitate F 1809
1-68.
Shallow pits S-pit, saucer pit 20-21 F 1727
F 1809
2. Referenced Documents
Slip 22-25 F 1725
F 1727
2.1 ASTM Standards:
F 1809
F 523 Practice for Unaided Visual Inspection of Polished
Swirl 26-27 F 1725
F 1727
Silicon Wafer Surfaces
F 1809
F 1241 Terminology of Silicon Technology
Twin 28-30 F 1725
F 1725 Guide for Analysis of Crystallographic Perfection of
A
Magnifications given in the attached illustrations are for an original frame size
Silicon Ingots
of 50350-mm except as noted.
B
Unless otherwise noted, all attached figures illustrate polished silicon wafer
F 1726 Guide for Analysis of Crystallographic Perfection of
surfaces.
Silicon Wafers
F 1727 Practice for Detection of Oxidation Induced Defects
4. Significance and Use
in Polished Silicon Wafers
4.1 This guide contains a compilation of the most com-
F 1809 Guide for Selection and Use of Etching Solutions to
monly observed singularly discernible structures on specular
Delineate Structural Defects in Silicon
silicon surfaces. Ambiguities and uncertainties regarding sur-
F 1810 Test Method for Counting Preferentially Etched or
face defects may be resolved by reference to this guide. There
Decorated Surface Defects in Silicon Wafers
is close alignment between this guide and common specifica-
2.2 SEMI Standard:
tions used for the purchase of silicon wafers.
M18 Format for Silicon Wafer Specification Form for Order
Entry 5. Interferences
5.1 Defects, structures, features, or artifacts revealed or
3. Terminology
enhanced by the referenced methods and exhibited in this guide
3.1 Related terminology may be found in Terminology
must be carefully interpreted. Unless utmost care is exercised,
F 1241.
the identification of the structure may be ambiguous.
6. Procedure
6.1 Refer to Practices F 523 and F 1727, Guides F 1725,
This guide is under the jurisdiction of Committee F01 on Electronics and is the
F 1726, and F 1809, and Test Method F 1810.
direct responsibility of Subcommittee F01.06 on Silicon Materials and Process
Control.
7. Keywords
Current edition approved June 10, 2000. Published September 2000. Originally
published as F 154 – 72T. Last previous edition F 154 – 94.
7.1 contaminant; defects; dislocation; epitaxial; fracture;
Annual Book of ASTM Standards, Vol 10.05.
preferential etch; scratch; shallow pit; silicon; slip; stacking
Available from Semiconductor Equipment and Materials International, 805 E.
Middlefield Rd., Mountain View, CA 94043. fault
Copyright © ASTM, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959, United States.
F 154
TABLE 2 Polished Surface Visual Characteristics
Relevant
Common Synonyms and Illustrating
Defect ASTM
Acronyms Figure
Standards
Area contamination Contamination, foreign 31-32 F 523
matter, residue
Crack Cleavage, fracture 33-38 F 523
Crater Slurry ring 39 F 523
Crow’s feet Contact damage 40 F 523
Dimple Depression 41-42 F 523
Dopant striation ring Striation 43 F 523
Edge chip Chip 44-47 F 523
Edge crack Crack 48 F 523
Edge crown 49 F 523
FIG. 3 Dislocation Etch Pits on (100) Silicon Following Schimmel
Epitaxial large point defect large light point defect, 50 F 523
(B) Preferential Etch, Magnification 3203.
(LLPD), spike
Foreign matter Contamination, residue 51-52 F 523
Groove Polished over scratch, 53-54 F 523
microscratch
Haze 55-56 F 523
Localized lazer scatterers large light scatterers, (LLS) 57-58 F 523
(particle contamination)
Mound 59 F 523
Orange peel Roughness 60 F 523
Pits Air pocket, hole, crystal 61-63 F 523
originated pit, (COP)
insufficient polish
Saw mark 64 F 523
Scratches Handling damage 65-67 F 523
Stain 68 F 523
FIG. 4 Dislocation Etch Pits on (100) Silicon Following Sirtl Etch,
Magnification 4003.
FIG. 1 Dislocation Etch Pits on (111) Silicon, Following 3-Min Sirtl
Etch, Magnification 1103.
FIG. 5 Dislocation Etch Pits on (100) Silicon Following 5-Min
Wright Etch, Magnification 2003.
FIG. 2 Dislocation Etch Pits on (110) Silicon, Following 5-Min
Wright Etch, Magnification 1103.
F 154
FIG. 6 Epitaxial Stacking Faults on (111), No Preparation
FIG. 9 Epitaxial Growth Hillock on (100), No Preparation
Required, Size Dependent Upon EPI Thickness.
Required, Size Dependent Upon EPI Thickness.
FIG. 10 Epitaxial Stacking Faults on (100), No Preparation
Required, Size Dependent Upon EPI Thickness.
FIG. 7 Epitaxial Stacking Faults on (100), No Preparation
Required, Size Dependent Upon EPI Thickness.
FIG. 11 Lineage on (111) Silicon Following Preferential Etch,
Magnification 1403.
FIG. 8 Epitaxial Stacking Faults on (100), No Preparation
Required, Size Dependent Upon EPI Thickness.
F 154
FIG. 15 Oxidation Induced Stacking Faults on (100) Silicon
FIG. 12 Oxidation Induced Stacking Faults on (100) Silicon
Following Oxidation and 3-Min Secco Etch, Magnification 5003.
Following Oxidation and 4-min Wright Etch, Magnification 2003.
FIG. 16 Oxidation Induced Stacking Faults on (100) Silicon
FIG. 13 Oxidation Induced Stacking Faults from Liquid Hone
Following Oxidation and 3-min Secco Etch, Magnification 2003.
Damage on a (100) Silicon Polished Frontside Surface Following
1100° Oxidation and 1-min Schimmel Etch, Magnification 15003.
FIG. 17 Oxidation Induced Stacking Faults on (111) Silicon
Following
...